DE3122249A1 - Circuit arrangement - Google Patents
Circuit arrangementInfo
- Publication number
- DE3122249A1 DE3122249A1 DE19813122249 DE3122249A DE3122249A1 DE 3122249 A1 DE3122249 A1 DE 3122249A1 DE 19813122249 DE19813122249 DE 19813122249 DE 3122249 A DE3122249 A DE 3122249A DE 3122249 A1 DE3122249 A1 DE 3122249A1
- Authority
- DE
- Germany
- Prior art keywords
- zone
- power transistor
- collector
- zener diode
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000009792 diffusion process Methods 0.000 claims abstract description 10
- 230000001939 inductive effect Effects 0.000 claims abstract description 3
- 238000001465 metallisation Methods 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
SchaltungsanordnungCircuit arrangement
Stand der Technik Die Erfindung geht aus von einer Schaltungsanordnung nach der Gattung des Hauptanspruchs. Aus der US-PS 3 749 974 (siehe hierzu auch die DE-OS 2 225 951) ist bereits eine Schaltungsanordnung dieser Art bekannt. Diese Schaltungsanordnung hat den Nachteil, daß sie aus diskreten Elementen aufgebaut ist und deshalb kostenaufwendig ist und viel Raum beansprucht.PRIOR ART The invention is based on a circuit arrangement according to the genre of the main claim. From US Pat. No. 3,749,974 (see also DE-OS 2 225 951) a circuit arrangement of this type is already known. These Circuit arrangement has the disadvantage that it is made up of discrete elements and is therefore expensive and takes up a lot of space.
Vorteile der Erfindung Die erfindungsgemäße Schaltungsanordnung mit den kennzeichnend Merkmalen des Hauptanspruchs hat demgegenüber den Vorteil, daß der Leistungstransistor, der Treibertransistor und die Zenerdiode durch einen kostengünstigen einfachen Planarprozeß in ein gemeinsames Kollektorsubstrat eindiffundiert werden können, wobei die besonderen, für die normale Bipolar-IC-Technik charakteristischen und kostenaufwendigen Mer-kmale, wie Isolierungsdiffusion, Leitschichten und dergleichen, vermieden werden. Anspruch 2 bringt eine besonders vorteilhafte Ausbildung der Zenerdiode in monolithisch integrierter Technik. Durch die Ausbildung der Zenerdiode als Hintereinanderschaltung mehrerer Teilzenerdioden gemäß Anspruch 3 kann die Spannung, bei der der Leistungstransistor aufgesteurt wird, als ganzzahliges Vielfaches der Emitter-Basis-Spannung des Leistungstransistors eingestellt werden.Advantages of the Invention The circuit arrangement according to the invention with the characterizing features of the main claim has the advantage that the power transistor, the driver transistor and the zener diode by an inexpensive one simple planar process are diffused into a common collector substrate can, with the special ones characteristic of the normal bipolar IC technology and expensive merchandise such as insulation diffusion, conductive layers and the like, be avoided. Claim 2 brings a particularly advantageous education the Zener diode in monolithically integrated technology. Through the training of the zener diode as a series connection of several partial zener diodes according to claim 3, the voltage, in which the power transistor is aufgesteurt, as an integer multiple of Emitter-base voltage of the power transistor can be set.
Zeichnung Ein Ausführungsbeispiel der monolithisch integrierten Schaltungsanordnung ist in der Zeichnung dargestellt und in der nachfolgenden Beschreibung näher erläutert.DRAWING An exemplary embodiment of the monolithically integrated circuit arrangement is shown in the drawing and explained in more detail in the following description.
Es zeigen: Figur 1 das elektrische Schaltbild der monolithisch integrierten Schaltungsanordnung, Figur 2 einen Schnitt durch eine erfindungsgemäße Ausgestaltung dieser Schaltungsanordnung.They show: FIG. 1 the electrical circuit diagram of the monolithically integrated Circuit arrangement, FIG. 2 shows a section through an embodiment according to the invention this circuit arrangement.
Beschreibung des Ausführungsbeispiels In Figur 1 ist das elektrische Schaltbild einer monolithisch integrierten Schaltungsanordnung dargestellt, die einen insbesondere zum Schalten induktiver Lasten dienenden npn-Leistungstransistor T2 enthält. Die Schaltung enthält ferner einen npn-Treibertransistor T1, der mit seinem Emitter an die Basis des Leistungstransistors T2 und mit seinem Kollektor an den Kollektor des Leistungstransistors T2 angeschlossen ist. Diese Schaltung ist allgemein als Darlington-Transistorschaltung bekannt. Parallel zur-Emitter-Basis-Strecke des Transistors T2 liegt ein Widerstand R2, parallel zur Emitter-Basis-Strecke des Transistors T1 liegt ein Widerstand R1. Parallel zur Emitter-Kollektor-Strecke des Transistors T2 ist eine Diode D1 in Sperrichtung geschaltet. Der Emitteranschluß der Darlington-Schaltung ist mit E, der Kollektoranschluß mit C und der Basisanschluß mit B bezeichnet.Description of the exemplary embodiment In Figure 1, the electrical Circuit diagram of a monolithic integrated circuit arrangement shown, the an npn power transistor used in particular for switching inductive loads T2 contains. The circuit also contains an npn driver transistor T1, which is connected to its emitter to the base of the power transistor T2 and to its collector is connected to the collector of the power transistor T2. This circuit is commonly known as a Darlington transistor circuit. Parallel to the emitter-base line of the transistor T2 is a resistor R2, parallel to the emitter-base path of the A resistor R1 is connected to transistor T1. Parallel to the emitter-collector path of the A diode D1 is connected in the reverse direction to transistor T2. The emitter connection the Darlington pair is with E, the collector connection with C and the base connection marked with B.
Ferner ist eine Zenerdiode D vorgesehen, die mit z ihrer Anode an die Basis des Leistungstransistors T2 und mit ihrer Kathode an den Kollektor des Leistungstransistors T2 angeschlossen ist, damit beim Überschreiten einer gewissen Spannung zwischen dem Kollektor und dem Emitter des Leistungstransistors T2 dieser Transistor aufgesteuert wird.Furthermore, a Zener diode D is provided, the z with its anode the base of the power transistor T2 and its cathode to the collector of the Power transistor T2 is connected so when a certain level is exceeded Voltage between the collector and the emitter of the power transistor T2 of this Transistor is turned on.
Figur 2 zeigt einen Teilschnitt der Anordnung gemäß Figur 1. Die Darlington-Transistorschaltung gemäß Figur 1 ist hierbei in ein n -leitendes Substrat 10 eingebracht.FIG. 2 shows a partial section of the arrangement according to FIG. 1. The Darlington transistor circuit according to FIG. 1, this is introduced into an n -conductive substrate 10.
Der linke Teil des Schnittbildes zeigt bis zu der strichpunktierten Linie den npn-Leistungstransistor wobei dessen p-leitende Basiszone mit 11 und dessen n -leitende Emitterzone mit 12 bezeichnet ist. Mit 13 ist eine aus Siliziumdioxid bestehende Passivierungsschicht bezeichnet, die auf die Oberseite der Anordnung aufgebracht ist und diese Oberseite mit Ausnahme von Kontaktfenstern, die zum elektrischen Anschluß der verschiedenen p- und n -leitenden Zonen dienen, vollständig bedeckt.The left part of the sectional view shows up to the dash-dotted one Line the npn power transistor with its p-conducting base zone with 11 and its n -type emitter zone is denoted by 12. At 13 one is made of silicon dioxide existing passivation layer, which is on top of the arrangement is applied and this top side with the exception of contact windows that are used for electrical Connection of the various p- and n -conductive zones are used, completely covered.
Auf der rechten Seite der strichpunktierten Linie ist die Zenerdiode D dargestellt, die erfindungsgemäß aus drei z Teilzenerdioden Da, Db und D besteht. Zur Bildung dieser c drei Teilzenerdioden sind drei p-leitende Zonen 11a, 11b, 11c gleichzeitig mit der Basisdiffusion 11 des Transistors T2 in das Substrat 10 eindiffundiert. Diese Zonen 11a, Ilb, 11c bilden die Anoden der Teilzenerdioden Da, Db und D c Die Anode 11a der Teilzenerdiode D ist dabei Bestandteil a der Basiszone 11 des Transistors T2. In die genannten p-leitenden Zonen lla, Ilb, 11c bzw. in das Substrat 10 hinein sind gleichzeitig mit der Emitterdiffusion 12 des Transistors T2 drei n -leitende Zonen 12a, 12b, 12c eindiffundiert, die die Kathoden der Teilzenerdioden Da, Db,DC bilden. Die Zone 12a ist dabei mit der Zone 11b über eine Metallisierungsbrücke 14 und die Zone 12b mit der Zone llc über eine Metallisierungsbrücke 15 verbunden, sodaß die drei Teilzenerdioden Da, Db und D c elektrisch hintereinandergeschaltet sind. Die elektrisch leitende Verbindung der dritten Teilzenerdiode D mit c dem Kollektor des Transistors T2 wird dadurch bewirkt, daß die Zone 12c teilweise in die Zone 11c und teilweise in das Substrat 10 eindiffundiert ist.On the right side of the dash-dotted line is the Zener diode D shown, which consists of three z Teilzenerdioden Da, Db and D according to the invention. To form these three partial zener diodes, there are three p-conductive zones 11a, 11b, 11c diffused into the substrate 10 at the same time as the base diffusion 11 of the transistor T2. These zones 11a, 11b, 11c form the anodes of the partial zener diodes Da, Db and Dc Die The anode 11a of the partial zener diode D is part a of the base zone 11 of the transistor T2. Into the named p-conductive zones 11a, 11b, 11c or into the substrate 10 are at the same time as the emitter diffusion 12 des Transistor T2 three n -conductive zones 12a, 12b, 12c diffused in, which are the cathodes of the partial zener diodes Da, Db, DC form. The zone 12a is connected to the zone 11b via a metallization bridge 14 and zone 12b connected to zone 11c via a metallization bridge 15, so that the three partial zener diodes Da, Db and D c are electrically connected in series are. The electrically conductive connection of the third Teilzenerdiode D with c dem The collector of the transistor T2 is caused by the fact that the zone 12c is partially in the zone 11c and is partially diffused into the substrate 10.
Der besondere Vorteil der erfindungsgemäßen monolithisch integrierten Schaltung,sanordnung besteht darin, daß sie durch einen kostengünstigen einfachen Planarprozeß, bei dem alle Schaltungselemente in ein gemeinsames Kollektorsubstrat eindiffundiert werden, hergestellt werden kann, wobei die besonderen, für die normale Bipolar-IC-Technik charakteristischen und kostenaufwendigen Merkmale, wie Isolierungsdiffusion, Leitschichten und dergleichen, vermieden werden.The particular advantage of the monolithically integrated according to the invention Circuit arrangement consists in making it through an inexpensive simple Planar process in which all circuit elements are in a common collector substrate diffused, can be produced, with the special, for the normal Bipolar IC technology characteristic and costly features, such as insulation diffusion, Conductive layers and the like are avoided.
L e e r s e i t eL e r s e i t e
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19813122249 DE3122249A1 (en) | 1981-06-04 | 1981-06-04 | Circuit arrangement |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19813122249 DE3122249A1 (en) | 1981-06-04 | 1981-06-04 | Circuit arrangement |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3122249A1 true DE3122249A1 (en) | 1982-12-23 |
Family
ID=6133929
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19813122249 Withdrawn DE3122249A1 (en) | 1981-06-04 | 1981-06-04 | Circuit arrangement |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE3122249A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0174473A1 (en) * | 1984-08-29 | 1986-03-19 | Robert Bosch Gmbh | Monolithic integrated power output stage |
DE4137084A1 (en) * | 1991-11-12 | 1993-05-13 | Telefunken Electronic Gmbh | SEMICONDUCTOR ARRANGEMENT |
-
1981
- 1981-06-04 DE DE19813122249 patent/DE3122249A1/en not_active Withdrawn
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0174473A1 (en) * | 1984-08-29 | 1986-03-19 | Robert Bosch Gmbh | Monolithic integrated power output stage |
US4755694A (en) * | 1984-08-29 | 1988-07-05 | Robert Bosch Gmbh | Integrated circuit Darlington transistor power stage incorporating various circuit components integrated on the same substrate |
DE4137084A1 (en) * | 1991-11-12 | 1993-05-13 | Telefunken Electronic Gmbh | SEMICONDUCTOR ARRANGEMENT |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8139 | Disposal/non-payment of the annual fee |