DE3065512D1 - Process for producing a semiconductor device using a crystalline insulating substrate - Google Patents
Process for producing a semiconductor device using a crystalline insulating substrateInfo
- Publication number
- DE3065512D1 DE3065512D1 DE8080301857T DE3065512T DE3065512D1 DE 3065512 D1 DE3065512 D1 DE 3065512D1 DE 8080301857 T DE8080301857 T DE 8080301857T DE 3065512 T DE3065512 T DE 3065512T DE 3065512 D1 DE3065512 D1 DE 3065512D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- semiconductor device
- insulating substrate
- crystalline insulating
- crystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
- H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/975—Substrate or mask aligning feature
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54069798A JPS5827663B2 (ja) | 1979-06-04 | 1979-06-04 | 半導体装置の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3065512D1 true DE3065512D1 (en) | 1983-12-15 |
Family
ID=13413113
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8080301857T Expired DE3065512D1 (en) | 1979-06-04 | 1980-06-04 | Process for producing a semiconductor device using a crystalline insulating substrate |
Country Status (4)
Country | Link |
---|---|
US (1) | US4348803A (de) |
EP (1) | EP0020179B1 (de) |
JP (1) | JPS5827663B2 (de) |
DE (1) | DE3065512D1 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59201409A (ja) * | 1983-04-28 | 1984-11-15 | Toshiba Corp | 半導体装置の製造方法 |
US4783166A (en) * | 1983-10-06 | 1988-11-08 | Robotic Vision Systems, Inc. | Arrangement for improving visual detection of painted areas relative to surrounding material |
US4572886A (en) * | 1983-11-03 | 1986-02-25 | Texas Instruments Incorporated | Optical method for integrated circuit bar identification |
US4585931A (en) * | 1983-11-21 | 1986-04-29 | At&T Technologies, Inc. | Method for automatically identifying semiconductor wafers |
KR900008384B1 (ko) * | 1986-05-20 | 1990-11-17 | 후지쓰 가부시끼가이샤 | 바아 코우드 패턴을 형성시킨 반도체 웨이퍼의 식별방법 및 반도체 장치의 제조방법 |
US4732867A (en) * | 1986-11-03 | 1988-03-22 | General Electric Company | Method of forming alignment marks in sapphire |
US4766482A (en) * | 1986-12-09 | 1988-08-23 | General Electric Company | Semiconductor device and method of making the same |
CA2011296A1 (en) | 1989-05-15 | 1990-11-15 | Douglas C. Bossen | Presence/absence bar code |
US5474640A (en) * | 1993-07-19 | 1995-12-12 | Applied Materials, Inc. | Apparatus for marking a substrate using ionized gas |
US5877094A (en) | 1994-04-07 | 1999-03-02 | International Business Machines Corporation | Method for fabricating a silicon-on-sapphire wafer |
US6126744A (en) * | 1996-11-18 | 2000-10-03 | Asm America, Inc. | Method and system for adjusting semiconductor processing equipment |
IL124592A (en) * | 1997-05-23 | 2002-07-25 | Gersan Ets | Method of marking a gemstone or diamond |
US7253428B1 (en) * | 2000-04-04 | 2007-08-07 | Micron Technology, Inc. | Apparatus and method for feature edge detection in semiconductor processing |
KR100752547B1 (ko) * | 2000-12-29 | 2007-08-29 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이 기판의 아이디 마크 및 그의 형성방법 |
US7198671B2 (en) * | 2001-07-11 | 2007-04-03 | Matsushita Electric Industrial Co., Ltd. | Layered substrates for epitaxial processing, and device |
US20110031213A1 (en) * | 2007-07-27 | 2011-02-10 | Yuri Konstantinovich Nizienko | Method for Marking Valuable Articles |
JP5463352B2 (ja) * | 2008-06-12 | 2014-04-09 | コリア アトミック エナジー リサーチ インスティチュート | 発色調節されたサファイアの製造方法 |
US9092187B2 (en) * | 2013-01-08 | 2015-07-28 | Apple Inc. | Ion implant indicia for cover glass or display component |
US9828668B2 (en) | 2013-02-12 | 2017-11-28 | Apple Inc. | Multi-step ion implantation |
TW201608235A (zh) * | 2014-08-18 | 2016-03-01 | 政美應用股份有限公司 | 量測圖案化藍寶石基板的光學量測裝置及方法 |
TW201608232A (zh) * | 2014-08-18 | 2016-03-01 | 政美應用股份有限公司 | 量測圖案化藍寶石基板的方法 |
US10280504B2 (en) | 2015-09-25 | 2019-05-07 | Apple Inc. | Ion-implanted, anti-reflective layer formed within sapphire material |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3513320A (en) * | 1966-10-31 | 1970-05-19 | Markstems Inc | Article identification system detecting plurality of colors disposed on article |
DE1615104A1 (de) * | 1967-07-24 | 1970-05-14 | Gottfried Bahr | Verfahren zur Selbstpositionierung eines Elektronenstrahles auf einem Objekt |
US3679497A (en) * | 1969-10-24 | 1972-07-25 | Westinghouse Electric Corp | Electron beam fabrication system and process for use thereof |
US3710101A (en) * | 1970-10-06 | 1973-01-09 | Westinghouse Electric Corp | Apparatus and method for alignment of members to electron beams |
US4203799A (en) * | 1975-05-30 | 1980-05-20 | Hitachi, Ltd. | Method for monitoring thickness of epitaxial growth layer on substrate |
GB1520925A (en) * | 1975-10-06 | 1978-08-09 | Mullard Ltd | Semiconductor device manufacture |
US4037969A (en) * | 1976-04-02 | 1977-07-26 | Bell Telephone Laboratories, Incorporated | Zone plate alignment marks |
US4200393A (en) * | 1976-06-07 | 1980-04-29 | Tokyo Shibaura Elecric Co., Ltd. | Method of positioning a semiconductor member by examining it and a die bonding apparatus using the same |
US4105926A (en) * | 1977-06-30 | 1978-08-08 | Rca Corporation | On-axis film scanner with reflected illumination |
US4202491A (en) * | 1977-09-26 | 1980-05-13 | Hitachi, Ltd. | Data card |
-
1979
- 1979-06-04 JP JP54069798A patent/JPS5827663B2/ja not_active Expired
-
1980
- 1980-06-04 EP EP80301857A patent/EP0020179B1/de not_active Expired
- 1980-06-04 DE DE8080301857T patent/DE3065512D1/de not_active Expired
- 1980-06-04 US US06/156,372 patent/US4348803A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS5827663B2 (ja) | 1983-06-10 |
EP0020179B1 (de) | 1983-11-09 |
EP0020179A1 (de) | 1980-12-10 |
US4348803A (en) | 1982-09-14 |
JPS55162243A (en) | 1980-12-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |