DE2950846A1 - METHOD FOR PRODUCING AMORPHOUS SEMICONDUCTOR LAYERS - Google Patents

METHOD FOR PRODUCING AMORPHOUS SEMICONDUCTOR LAYERS

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Publication number
DE2950846A1
DE2950846A1 DE19792950846 DE2950846A DE2950846A1 DE 2950846 A1 DE2950846 A1 DE 2950846A1 DE 19792950846 DE19792950846 DE 19792950846 DE 2950846 A DE2950846 A DE 2950846A DE 2950846 A1 DE2950846 A1 DE 2950846A1
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Prior art keywords
germanium
semiconductor layers
amorphous semiconductor
producing amorphous
semiconductor
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DE19792950846
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German (de)
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DE2950846C2 (en
Inventor
Colin Howard Ludlow Goodman
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International Standard Electric Corp
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International Standard Electric Corp
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Publication of DE2950846A1 publication Critical patent/DE2950846A1/en
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Publication of DE2950846C2 publication Critical patent/DE2950846C2/en
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1604—Amorphous materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table including AIVBIV alloys, e.g. SiGe, SiC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Description

C.H.L. Goodman -11C.H.L. Goodman -11

Verfahren zur Herstellung amorpher Halbleiterschichten. Process for the production of amorphous semiconductor layers .

Die Erfindung betrifft Verfahren zum Herstellen amorpher Halbleiterschichten von Halbleitern der IVten Hauptgruppe, insbesondere von Silizium und Germanium.The invention relates to methods for producing amorphous semiconductor layers from semiconductors of main group IV, especially of silicon and germanium.

Es ist bekannt, amorphe Halbleiter auf geeigneten Substraten durch HP Glimmentladung sowohl in elementarer Form wie auch in Form von Verbindungen abzuscheiden. Die Wahl des Halbleitermaterials hängt von der besonderen Anwendung ab. Zum Beispiel ist es in Solarzellen notwendig, die Absorptioneeigenechaften des Materials an das Sonnenepektrum anzupassen. Dabei muß darauf geachtet werden, ein Halbleitermaterial mit einer solchen Bandlücke zu wählen, daß die Vorrichtung den höchsten möglichen Wirkungsgrad aufweist.It is known to use amorphous semiconductors on suitable substrates by means of HP glow discharge both in elemental form as well as to be deposited in the form of compounds. The choice of semiconductor material depends on the particular application away. For example, in solar cells it is necessary to have absorption properties of the material to adapt to the solar spectrum. Care must be taken to use a semiconductor material to be selected with such a band gap that the device has the highest possible efficiency.

Germanium, Silizium und Germanium-Siliziumverbindungen werden gewöhnlicheweise durch Glimmentladung von Germaniumhydrid oder Siliziumhydrid abgeschieden. Dabei zeigen Halbleiterschichten von Germaniumsilizium, selbst wenn sie eine nur sehr geringen Germaniumgehalt aufweisen,vernachlässigbare Photoleitfähigkeit verglichen mit reinen Siliziumschichten. Dies wird dadurch erklärt, daß die Germaniumwasserstoffbindung sehr schwach ist im Vergleich zu der Siliziumwasserstoff bindung, was dazu führt, daß freie Bindungen der Germaniumatomme in amorphem Germanium und seinen Legierungen nicht fest hydrogeniert sind, was" dazu führt, daß diese Materialien eine hohe Dichte von Zuständen innerhalb der Bandlücke aufweisen. Daher könnte man aus solchen Germaniumsiliziumschichten keine Solarzellen herstellen, selbst wennGermanium, silicon and germanium-silicon compounds are usually formed by glow discharge of germanium hydride or silicon hydride deposited. Semiconductor layers of germanium silicon, even if they have a have only a very low germanium content, negligible Photoconductivity compared to pure silicon layers. This is explained by the fact that the germanium hydrogen bond is very weak compared to the silicon hydrogen bond, which leads to free bonds of the germanium atoms in amorphous germanium and its alloys are not firmly hydrogenated, which "leads to these materials have a high density of states within the band gap. Therefore, one could use such germanium silicon layers don't make solar cells even if

Dr. J/Sam ./Dr. J / Sat ./

17.12.1979December 17, 1979

030028/0675030028/0675

C.H.L. Goodman -11C.H.L. Goodman -11

deren Bandlücke sehr gut an das Sonnensprektrum angepaßt sein wurde.whose band gap would be very well matched to the solar spectrum.

Der Erfindung liegt ,die Aufgabe zugrunde, ein Verfahren zurThe invention is based on the object of a method for

tamorphen^
Herstellung von"Haibieiterschichten von Halbleitern der IVten Hauptgruppe anzugeben, bei denen nioht mehr aufgrund freier Bindungen der Atomme eine große Anzahl isolierte Energiezustände innerhalb der Bandlücke besteht. tamorphic ^
Manufacture of "semiconductor layers of semiconductors of the fourth main group, in which there is no longer a large number of isolated energy states within the band gap due to free bonds between the atoms.

Die Lösung der Aufgabe ist durch den ersten Anspruch gegeben. Durch die Beimengung eines Halogengases zu der Qasatmosphäre, aus der die amorphen Halbleiterschichten durch Qlimmentladung abgeschieden werden, wird erreicht, daß die freien Bindungen insbesondere des Germaniums durch Halogenenatome abgesättigt werden. Diese Germanium/Halogenbindungen sind erheblich stärker als die Germanium/Wasserstoffbindung. Durch diese Maßname ist gewährleistet, daß nunmehr nicht nur alle Bindungsmöglichkeiten der Siliziumatomme sondern auch der Germaniumatome abgesättigt sind, wodurch keine isolierten Energiezustände innerhalb der Bandlücke mehr bestehen.The solution to the problem is given by the first claim. By adding a halogen gas to the gas atmosphere, from which the amorphous semiconductor layers are made by Qlim discharge are deposited, it is achieved that the free bonds especially of germanium are saturated by halogen atoms. These germanium / halogen bonds are considerably stronger than the germanium / hydrogen bond. Through this measure it is guaranteed that now not only all bonding possibilities of the silicon atoms but also of the germanium atoms are satisfied are, as a result of which there are no longer any isolated energy states within the band gap.

Als Halogengas hat sich Pluorgas als besonders vorteilhaft erwiesen. Das Pluorgas wird der sonst zur Herstellung von amorphen Halbleiterschichten verwendeten Gasatmosphäre in geringerMenge zugesetzt. Es hat sich gezeigt, daß der Anteil von Fluorgas in der Gasatmosphäre in weiten Grenzen schwanken kann, ohne daß dies Einfluß auf die Leitfähigkeit der hagestellten Halbleiterschichten hätte.As a halogen gas, fluorine gas has proven to be particularly advantageous. The plus gas is used to produce gas atmosphere used in amorphous semiconductor layers is added in a small amount. It has been shown that the proportion of fluorine gas in the gas atmosphere can fluctuate within wide limits without this affecting the conductivity of the hagestellt Semiconductor layers would have.

Statt durch Glimmentladung können die amorphen Schichten natürlich auch durch Sputtern in einer Wasserstoff/Halogengasatmosphäre erzeugt werden. Bei allen HerstellverfahrenInstead of glow discharge, the amorphous layers can of course can also be generated by sputtering in a hydrogen / halogen gas atmosphere. In all manufacturing processes

030028/0675030028/0675

.. Ij -.. Ij -

C.H.L. Goodman -11C.H.L. Goodman -11

werden die Anteile der Ausgangsmaterialien so gewählt, daß im amorphen Halbleiter eine Bandlücke erzielt wird, die an die Wellenlängen des einfallenden Lichtes angepaßt ist.the proportions of the starting materials are chosen so that a band gap is achieved in the amorphous semiconductor that is close to the wavelengths of the incident light is adapted.

Die Erfindung ist jedoch nicht auf photoempfindliche Bauteile beschränkt. In einem Bauteil mit einer Schichtfolge verschiedener Halbleiter mit pn-Übergängen können auch
Qleichrichtereffekte auegenutzt werden.However, the invention is not limited to photosensitive components. In a component with a layer sequence of different semiconductors with pn junctions can also
Rectifier effects can be used.

030028/067S030028 / 067S

Claims (1)

Patentanwalt
Dipl.-Phys. Leo ThulPatent attorney
Dipl.-Phys. Leo Thul C.H.L. Goodman -11C.H.L. Goodman -11 INTERNATIONAL STANDARD ELECTRIC CORPORATION, NEW YORKINTERNATIONAL STANDARD ELECTRIC CORPORATION, NEW YORK Patentansprüche: Patent claims : I)) Verfahren zum Herstellen amorpher Halbleiterschichten von Halbleitern der IVten Hauptgruppe durch Glimmentladung oder Sputtern in einer Qasatmosphäre, dadurch geken η jr"e i c h-n^e t, daß die Qasatmosphäre zusätzlich ein Halogengas· enthält.I)) Process for producing amorphous semiconductor layers of semiconductors of main group IV by glow discharge or sputtering in a Qas atmosphere, thereby geken η jr "e i c h-n ^ e t that the Qasatmosphäre additionally contains a halogen gas. 2) Verfahren nach Anspruch 1,2) method according to claim 1, dadurch gekennzeichnet, daß der Halbleiter Germanium ist.characterized in that the semiconductor is germanium. 3) Verfahren nach Anspruch 1,3) method according to claim 1, dadurch gekennzeichnet, daß der Halbleiter eine Germanium-Silizium-Verbindung ist.characterized in that the semiconductor is a germanium-silicon compound. 4) Verfahren nach einem der Ansprüche 1 bis 3,4) Method according to one of claims 1 to 3, d a d u r q^-h' gpe.k ennzeichnet, daß dasd a d u r q ^ -h 'gpe. denotes that the Halogengas Pluorgasj ist.Halogen gas is Pluorgasj. Dr. J/Sam ./.Dr. J / Sat ./. 17.12.1979December 17, 1979 030028/0675030028/0675 ORIGINAL INSPECTEDORIGINAL INSPECTED
DE2950846A 1978-12-19 1979-12-18 Process for the production of amorphous semiconductor layers Expired DE2950846C2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB7849117A GB2038086A (en) 1978-12-19 1978-12-19 Amorphous semiconductor devices

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DE2950846A1 true DE2950846A1 (en) 1980-07-10
DE2950846C2 DE2950846C2 (en) 1985-01-17

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3119481A1 (en) * 1980-05-19 1982-01-28 Energy Conversion Devices, Inc., 48084 Troy, Mich. METHOD FOR PRODUCING A P-CONDUCTIVE SEMICONDUCTOR ALLOY
FR2490016A1 (en) * 1980-09-09 1982-03-12 Energy Conversion Devices Inc METHOD FOR MANUFACTURING A PHOTOSENSITIVE AMORPHOUS ALLOY, ALLOY OBTAINED BY THIS METHOD AND DEVICE FOR IMPLEMENTING SAME
DE3135412A1 (en) * 1980-09-09 1982-08-12 Energy Conversion Devices Inc METHOD FOR PRODUCING A PHOTO-SENSITIVE AMORPHOUS ALLOY
US4774195A (en) * 1984-10-10 1988-09-27 Telefunken Electronic Gmbh Process for the manufacture of semiconductor layers on semiconductor bodies or for the diffusion of impurities from compounds into semiconductor bodies utilizing an additional generation of activated hydrogen

Families Citing this family (42)

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Publication number Priority date Publication date Assignee Title
US4492810A (en) * 1978-03-08 1985-01-08 Sovonics Solar Systems Optimized doped and band gap adjusted photoresponsive amorphous alloys and devices
US4522663A (en) * 1980-09-09 1985-06-11 Sovonics Solar Systems Method for optimizing photoresponsive amorphous alloys and devices
KR900005566B1 (en) * 1980-09-09 1990-07-31 에너지 컨버션 디바이시즈, 인코포레이티드 Method for optimizing photo responsive amorphous alloys and devices
AT380974B (en) * 1982-04-06 1986-08-11 Shell Austria METHOD FOR SETTING SEMICONDUCTOR COMPONENTS
DE3429899A1 (en) * 1983-08-16 1985-03-07 Canon K.K., Tokio/Tokyo METHOD FOR FORMING A DEPOSITION FILM
US4759947A (en) * 1984-10-08 1988-07-26 Canon Kabushiki Kaisha Method for forming deposition film using Si compound and active species from carbon and halogen compound
US4772486A (en) * 1985-02-18 1988-09-20 Canon Kabushiki Kaisha Process for forming a deposited film
US4726963A (en) * 1985-02-19 1988-02-23 Canon Kabushiki Kaisha Process for forming deposited film
US5244698A (en) * 1985-02-21 1993-09-14 Canon Kabushiki Kaisha Process for forming deposited film
US4818563A (en) * 1985-02-21 1989-04-04 Canon Kabushiki Kaisha Process for forming deposited film
US4853251A (en) * 1985-02-22 1989-08-01 Canon Kabushiki Kaisha Process for forming deposited film including carbon as a constituent element
US4801468A (en) * 1985-02-25 1989-01-31 Canon Kabushiki Kaisha Process for forming deposited film
JP2537175B2 (en) * 1985-03-27 1996-09-25 キヤノン株式会社 Functional deposition film manufacturing equipment
JPH0817159B2 (en) * 1985-08-15 1996-02-21 キヤノン株式会社 Method of forming deposited film
JP2686928B2 (en) * 1985-08-26 1997-12-08 アンリツ株式会社 Silicon-germanium mixed crystal thin film conductor
JP2635021B2 (en) * 1985-09-26 1997-07-30 宣夫 御子柴 Deposition film forming method and apparatus used for the same
US4818564A (en) * 1985-10-23 1989-04-04 Canon Kabushiki Kaisha Method for forming deposited film
US4812325A (en) * 1985-10-23 1989-03-14 Canon Kabushiki Kaisha Method for forming a deposited film
US4837048A (en) * 1985-10-24 1989-06-06 Canon Kabushiki Kaisha Method for forming a deposited film
JPS62136885A (en) * 1985-12-11 1987-06-19 Canon Inc Photosensor, its manufacture and manufacturing apparatus
JPS62136871A (en) * 1985-12-11 1987-06-19 Canon Inc Photosensor, its manufacture and manufacturing apparatus
JPH0645885B2 (en) * 1985-12-16 1994-06-15 キヤノン株式会社 Deposited film formation method
JPH0645886B2 (en) * 1985-12-16 1994-06-15 キヤノン株式会社 Deposited film formation method
JPH0645888B2 (en) * 1985-12-17 1994-06-15 キヤノン株式会社 Deposited film formation method
JPH0645890B2 (en) * 1985-12-18 1994-06-15 キヤノン株式会社 Deposited film formation method
JPS62142778A (en) * 1985-12-18 1987-06-26 Canon Inc Formation of deposited film
JPH0647727B2 (en) * 1985-12-24 1994-06-22 キヤノン株式会社 Deposited film formation method
JPH0647730B2 (en) * 1985-12-25 1994-06-22 キヤノン株式会社 Deposited film formation method
JPH0651906B2 (en) * 1985-12-25 1994-07-06 キヤノン株式会社 Deposited film formation method
US5391232A (en) * 1985-12-26 1995-02-21 Canon Kabushiki Kaisha Device for forming a deposited film
JPH084071B2 (en) * 1985-12-28 1996-01-17 キヤノン株式会社 Deposited film formation method
JPH084070B2 (en) * 1985-12-28 1996-01-17 キヤノン株式会社 Thin film semiconductor device and method of forming the same
JPH0651908B2 (en) * 1985-12-28 1994-07-06 キヤノン株式会社 Method of forming thin film multilayer structure
JPH0651909B2 (en) * 1985-12-28 1994-07-06 キヤノン株式会社 Method of forming thin film multilayer structure
US5322568A (en) * 1985-12-28 1994-06-21 Canon Kabushiki Kaisha Apparatus for forming deposited film
GB2185758B (en) * 1985-12-28 1990-09-05 Canon Kk Method for forming deposited film
JP2566914B2 (en) * 1985-12-28 1996-12-25 キヤノン株式会社 Thin film semiconductor device and method of forming the same
US4868014A (en) * 1986-01-14 1989-09-19 Canon Kabushiki Kaisha Method for forming thin film multi-layer structure member
US4801474A (en) * 1986-01-14 1989-01-31 Canon Kabushiki Kaisha Method for forming thin film multi-layer structure member
US5366554A (en) * 1986-01-14 1994-11-22 Canon Kabushiki Kaisha Device for forming a deposited film
US4800173A (en) * 1986-02-20 1989-01-24 Canon Kabushiki Kaisha Process for preparing Si or Ge epitaxial film using fluorine oxidant
US4834023A (en) * 1986-12-19 1989-05-30 Canon Kabushiki Kaisha Apparatus for forming deposited film

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WO1979000776A1 (en) * 1978-03-16 1979-10-18 Energy Conversion Devices Inc Amorphous semiconductors equivalent to crystalline semiconductors

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WO1979000776A1 (en) * 1978-03-16 1979-10-18 Energy Conversion Devices Inc Amorphous semiconductors equivalent to crystalline semiconductors

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* Cited by examiner, † Cited by third party
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3119481A1 (en) * 1980-05-19 1982-01-28 Energy Conversion Devices, Inc., 48084 Troy, Mich. METHOD FOR PRODUCING A P-CONDUCTIVE SEMICONDUCTOR ALLOY
FR2490016A1 (en) * 1980-09-09 1982-03-12 Energy Conversion Devices Inc METHOD FOR MANUFACTURING A PHOTOSENSITIVE AMORPHOUS ALLOY, ALLOY OBTAINED BY THIS METHOD AND DEVICE FOR IMPLEMENTING SAME
DE3135412A1 (en) * 1980-09-09 1982-08-12 Energy Conversion Devices Inc METHOD FOR PRODUCING A PHOTO-SENSITIVE AMORPHOUS ALLOY
DE3135393A1 (en) * 1980-09-09 1982-09-30 Energy Conversion Devices Inc METHOD FOR PRODUCING A LIGHT-SENSITIVE AMORPHOUS ALLOY AND COMPONENT CONTAINING THIS
US4774195A (en) * 1984-10-10 1988-09-27 Telefunken Electronic Gmbh Process for the manufacture of semiconductor layers on semiconductor bodies or for the diffusion of impurities from compounds into semiconductor bodies utilizing an additional generation of activated hydrogen

Also Published As

Publication number Publication date
GB2038086A (en) 1980-07-16
DE2950846C2 (en) 1985-01-17

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