DE2746967C2 - Electrophotographic recording drum - Google Patents

Electrophotographic recording drum

Info

Publication number
DE2746967C2
DE2746967C2 DE2746967A DE2746967A DE2746967C2 DE 2746967 C2 DE2746967 C2 DE 2746967C2 DE 2746967 A DE2746967 A DE 2746967A DE 2746967 A DE2746967 A DE 2746967A DE 2746967 C2 DE2746967 C2 DE 2746967C2
Authority
DE
Germany
Prior art keywords
silicon
drum
vessel
layer
electrophotographic recording
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2746967A
Other languages
German (de)
Other versions
DE2746967A1 (en
Inventor
Karl Dipl.-Phys. Dr. 8000 München Kempter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=6021787&utm_source=***_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE2746967(C2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE2746967A priority Critical patent/DE2746967C2/en
Priority to EP78100799A priority patent/EP0001549B1/en
Priority to DE7878100799T priority patent/DE2862016D1/en
Priority to AT741178A priority patent/AT359828B/en
Priority to IT28816/78A priority patent/IT1100321B/en
Priority to CA000313556A priority patent/CA1159702A/en
Priority to US05/952,066 priority patent/US4225222A/en
Priority to JP12904678A priority patent/JPS5478135A/en
Publication of DE2746967A1 publication Critical patent/DE2746967A1/en
Publication of DE2746967C2 publication Critical patent/DE2746967C2/en
Application granted granted Critical
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08278—Depositing methods
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers

Description

Die Erfindung betrifft eine elektrofotografische Aufzeichnungstrommel mit einer anorganischen, fotoleitfähigen Schicht auf ihrem außen -. Mantel.The invention relates to an electrophotographic recording drum with an inorganic, photoconductive one - layer on her outside. A coat.

Aus dem Stand der Technik ist es bekannt, für elektrostatische Fotokopierverfahren Trommeln zu verwenden, die eine Oberflächenschicht aus fotoleitfähigem Material wie Selen oder Chalkogenid-Gläsern (Arsen-Selen-Legierungen und -Verbindungen) haben. Eine Aufzeichnungstrommel der eingangs genannten Art ist aus der DE-OS 21 59 387 bekannt.It is known from the prior art to use drums for electrostatic photocopying processes use a surface layer of photoconductive material like selenium or chalcogenide glasses (Arsenic-selenium alloys and compounds). A recording drum of the type mentioned at the beginning Art is known from DE-OS 21 59 387.

Die erwähnten Trommeln dienen dazu, nach erfolgte·· Aufladung in einer Corona-Entladung ein auf die Oberfläche der Trommel projiziertes Abbild der zu kopierenden Vorlage aufzunehmen. Dieses Abbild ist ein elektrostatisches Ladungsbild, das nachfolgend unter Verwendung eines Tonerpulvers zu einer mit Toner beschichteten Trommel wird. Durch Aufeinanderlaufenlassen von Papier und Oberfläche der Trommel wird der eigentliche Kopiervorgang durchgeführt.The drums mentioned are used to discharge a corona discharge onto the after charging has taken place Surface of the drum to receive the projected image of the original to be copied. This image is an electrostatic charge image, which is subsequently formed into a with Toner coated drum is. By allowing the paper to collide with the surface of the drum the actual copying process is carried out.

Für Vorrichtungen dieses bekannten Kopierverfahrens ergeben sich folgende Forderungen: Das Material der fotoleitfähigen Schicht der Trommel muß eine hohe Lichtempfindlichkeit haben, und zwar im Spektralbereich technisch üblicher Lichtquellen; das Material muß einen spezifischen elektrischen Widerstand in Dunkelheit in der Größe von ρ > 10l2Ohm · cm haben; das Material muß auch bei Dauerbelastung unveränderte Eigenschaften aufweisen, d. h. ermüdungsfrei arbeiten, und es muß eine für das Kopieren ausreichende Abriebfestigkeit haben,For devices of this known copying process, the following requirements arise: The material of the photoconductive layer of the drum must have a high sensitivity to light, namely in the spectral range of technically common light sources; the material must have a specific electrical resistance in the dark of ρ> 10 l2 ohm · cm; the material must have unchanged properties even under constant load, i.e. work without fatigue, and it must have sufficient abrasion resistance for copying,

Aufgabe der vorliegenden Erfindung ist es, ein solches Material für die fotoleitfähige Schicht einer solchen Aufzeichnungstrommel zu finden, das die voranstehen' den Forderungen zusammengenommen erfüllt.The object of the present invention is to provide such Material for the photoconductive layer of such To find recording drum that meets the above 'the requirements taken together.

Diese Aufgäbe Wird dadurch gelöst, daß die fotoleitfähige Schicht als Fotoleiter amorphes Silizium enthält. Das Silizium kann insbesondere dotiert sein, womit in bekannter Weise das Leitfähigkeitsverhalten zu beeinflussen istThis task is solved in that the photoconductive layer containing amorphous silicon as a photoconductor. The silicon can in particular be doped, with which the conductivity behavior can be influenced in a known manner

Schon vor längerer Zeit sind die Eigenschaften amorphen Siliziums in bezug auf Fotoleitung und Absorption untersucht worden. Auf diesen Erkenntnissen baut die Erfindung auf. Mit dem amorphen Silizium steht ein außerordentlich hochohmiges Material mitThe properties of amorphous silicon with regard to photoconductivity and Absorption has been studied. The invention is based on these findings. With the amorphous silicon is an extremely high-resistance material with

ίο spezifischen Widerstand bis zu 10l4Ohm-em zur Verfügung.ίο Resistivity up to 10 l4 ohm-em available.

Es liegt im Rahmen des Erfindungsgedankens, daß die Herstellung dieser Schicht mit Hilfe einer Hochfrequenzglimmentladung erfolgt, wobei in dem evakuierten Gefäß mit einer tremmelförmigen Gegenelektrode ein trommeiförmiger Schichtträger konzentrisch zur Gegenelektrode angeordnet wird und zum Aufbringen des Fotoleiters eine siliziumhaltige Verbindung, die sich bei erhöhter Temperatur unter Abscheidung von Silizium zersetzt, in das Gefäß geleitet wird.It is within the scope of the inventive concept that the production of this layer with the aid of a high-frequency glow discharge takes place, with a drum-shaped counter electrode in the evacuated vessel a drum-shaped support is arranged concentrically to the counter electrode and for application of the photoconductor a silicon-containing compound, which is deposited at elevated temperature with the deposition of Silicon decomposes, is passed into the vessel.

Wenn bei der Herstellung einer Schicht aus amorphem Silizium durch Niederschlag auf einem Träger die Oberflächentemperatur dieses Trägers auf ca. 2700C gehalten wird, kann man eine amorphe Siliziumschicht erreichen, die — wie festgestellt — einen Wirkungsgrad des Fotostromes mit 50% hat. Maximaler Wirkungsgrad liegt dabei im Bereich einer Wellenlänge von ca. 600 nm. Für die erfindungsgemätSe Lehre hat der Umstand eine große Bedeutung, daß im Silizium die Elektronen und Löcher eine etwa gleich große Beweglichkeit haben. Dieser Umstand wird bei der Erfindung dazu ausgenutzt, eine fotoleitfähige Schicht zu erreichen, die praktisch keine elektrische Ermüdung aufweist, wie das bei seit Jahren bekannterweise verwendeten Materialien der Fall ist.If, during the production of a layer of amorphous silicon by precipitation on a carrier, the surface temperature of this carrier is kept at approx. 270 ° C., an amorphous silicon layer can be achieved which - as stated - has an efficiency of the photocurrent of 50%. The maximum efficiency is in the range of a wavelength of approx. 600 nm. The fact that the electrons and holes in silicon have approximately the same mobility is of great importance for the teaching according to the invention. This fact is used in the invention to achieve a photoconductive layer which has practically no electrical fatigue, as is the case with materials that have been known for years.

Da amorphe Schichten aus Silizium eine hohe Abriebfestigkeit haben, weist die elektrofotografische Aufzeichnungstrommel mit der fotoleitfähigen Schicht auf ihrem äußeren Mantel aus amorphem Silizium eineSince amorphous layers made of silicon have a high abrasion resistance, the electrophotographic Recording drum with the photoconductive layer on its outer shell made of amorphous silicon

ίο erhöhte Lebensdauer auf.ίο increased service life.

Weitere Einzelheiten, insbesondere über die Herstellungsweise sind der in der Zeichnung befindlichen, anhand eines Ausführungsbeispiels beschriebenen Figur zu entnehmen.More details, especially about the manufacturing process are the figure located in the drawing and described using an exemplary embodiment refer to.

Mit 1 ist ein Gefäß bezeichnet, das sich mit Hilfe einer Pumpe evakuieren läßt, d. h. aus der darin enthaltenen Luftatmosphäre entfernt werden kann. Das Gefäß 1 kann mit einem Deckel 3 verschlossen werden. Durch diese öffnung wird die mit der amorphen Siliziumschicht zu versehende Trommel in das Gefäß 1 eingebracht. Mit 5 ist ein System aus Zuführungsleitungen bezeichnet, durch die hindurch die siliziumhaltige gasförmige Verbindung, z. B. Silan (SiHx), in das Innere ues Gefäßes 1 eingebracht wird. Mit Hilfe einer mit 7 bezeichneten, schematisch angedeuteten Heizung läßt Sich die Oberfläche der Trommel 2 auf eine Temperatur von insbesondere ca. 27O°C bringen. Auf der als Träger dienenden Manteloberfläche 4 der Trommel 2 erfolgt die thermische Zersetzung des zugeführten Silans und damit die amorphe Abscheidung der Siliziumschicht 21.1 with a vessel is referred to, which can be evacuated with the aid of a pump, d. H. from the contained therein Air atmosphere can be removed. The vessel 1 can be closed with a lid 3. By this opening becomes the drum to be provided with the amorphous silicon layer in the vessel 1 brought in. 5 with a system of supply lines is referred to, through which the silicon-containing gaseous compound, e.g. B. Silane (SiHx), into the interior ues vessel 1 is introduced. With the help of a designated 7, schematically indicated heater can Bring the surface of the drum 2 to a temperature of in particular approx. On the as a carrier Serving jacket surface 4 of the drum 2, the thermal decomposition of the supplied silane takes place and thus the amorphous deposition of the silicon layer 21.

Im Raum um die Oberfläche 4 der Trommel 2 herumIn the space around the surface 4 of the drum 2

wird im Innern des Gefäßes 1 eine HochfreqUenz-OIimrrientladüng aufrechterhalten. Die Trommela HochfreqUenz OIimrientladüng in the interior of the vessel 1 maintain. The drum

2 dient dabei mit ihrer Oberfläche 4 als die eine Elektrode, die über eine Hochfrequenz'Zuleitung 6 mit einem Hochfrequenzgenerator 60 verbunden ist Als dazugehörige Gegenelektrode dient die Elektrode 8, die z, B, ein außerhalb um das Gefäß 1 hefumgelegler2 serves with its surface 4 as the one Electrode, which has a high frequency lead 6 with a high frequency generator 60 is connected as The associated counter electrode is used by the electrode 8, which, for example, is an outside around the vessel 1 yeast

Mantel aus elektrisch leitendem Material ist. Die Glimmentladung brennt dann im Innern des Gefäßes 1 zwischen der erwähnten Oberfläche 4 und der mantelförmigen Innenwand 11 des Gefäßes.Sheath is made of electrically conductive material. The glow discharge then burns inside the vessel 1 between the mentioned surface 4 and the jacket-shaped inner wall 11 of the vessel.

Einzelheiten einer amorphen Siliziumabscheidung in einer Hochfrequenz-Glimmentladung lassen sich aus »J. Non-CrysL Sol.«, Bd. 3 (1970), Seite 255 entnehmen. Bevorzugt ist ein Gasdruck von 0,05 bis 5 mbar im Innern des Gefäßes 1. Für die Abscheidung einer ausreichend dicken Schicht ist eine Zeitdauer von 1 bis 5 Stunden anzusetzen. Bevorzugt ist eine SchichtdickeDetails of an amorphous silicon deposition in a high-frequency glow discharge can be derived from »J. Non-CrysL Sol. ”, Vol. 3 (1970), p. 255. A gas pressure of 0.05 to 5 mbar in the interior of the vessel 1 is preferred A sufficiently thick layer should be set for a period of 1 to 5 hours. A layer thickness is preferred

im Bereich von 10 μιη bis 100 μπι.in the range from 10 μm to 100 μm.

Die amorphe Siliziumschicht auf der Trommel hat gegenüber den aus dem Stand der Technik bekannten, anderen anorganischen, fotoleitfähigen Schichten üen Vorteil, daß sie relativ hohen Temperaturen ausgesetzt werden kann, ohne strukturelle Änderungen zu erleiden. Eine gewisse obere Grenze für die Temperaturbelastbarkeit ist der Wert der Temperatur, bei der der Niederschlag des Siliziums auf der Oberfläche 4 erfolgt ist Vorteilhafterweise liegt die Kristallisationstemperatur des Siliziums erst bei Temperaturen um 10000C.The amorphous silicon layer on the drum has the advantage over the other inorganic, photoconductive layers known from the prior art that it can be exposed to relatively high temperatures without suffering structural changes. A certain upper limit for the temperature resistance is the value of the temperature at which the silicon is deposited on the surface 4. Advantageously, the crystallization temperature of the silicon is only at temperatures around 1000 ° C.

Hierzu 1 Blatt Zeichnungen.1 sheet of drawings.

Claims (4)

Patentansprüche:Patent claims: 1. Elektrofotografische Aufzeichnungstrommel mit einer anorganischen fotoleitfähigen Schicht auf ihrem äußeren Mantel, dadurch gekennzeichnet, daß die fotoleitfähige Schicht als Fotoleiter amorphes Silizium enthält.1. Electrophotographic recording drum with an inorganic photoconductive layer its outer jacket, characterized in that the photoconductive layer as Photoconductor contains amorphous silicon. 2. Verfahren zur Herstellung eines elektrofotografischen Aufzeichnungsmaterials, bei dem ein anorganischer Fotoleiter in einem evakuierten Gefäß mit Hilfe einer Hochfrequenz-Glimmentladung auf einen auf 20 bis 3500C erwärmten Schichtträger aufgebracht wird, dadurch gekennzeichnet, daß in einem Gefäß mit einer trommeiförmigen Gegenelektrode ein trommeiförmiger Schichtträger angeordnet wird, daß zum Aufbringen des Fotoleiters eine siliziumhaltige Verbindung, die sich bei erhöhter Temperatur unter Abscheidung von Silizium zersetzt, in das Gefäß geleitet wird, und daß die Oberfläche des Schichtträgers über die Zersetziingstemperatur der siliziumhaltigen Verbindung erwärmt wird.2. A process for producing an electrophotographic recording material, in which an inorganic photoconductor is applied in an evacuated vessel with the aid of a high-frequency glow discharge to a substrate heated to 20 to 350 0 C, characterized in that a drum-shaped counter electrode in a vessel with a drum-shaped counter electrode Layer support is arranged that for applying the photoconductor a silicon-containing compound, which decomposes at elevated temperature with the deposition of silicon, is passed into the vessel, and that the surface of the layer support is heated above the decomposition temperature of the silicon-containing compound. 3. Verfahren nach Anspruch 2, gekennzeichnet dadurch, daß als siliziumhaltige Verbindung Silan (SiH-O verwendet wird.3. The method according to claim 2, characterized in that the silicon-containing compound is silane (SiH-O is used. 4. Verfahren nach Anspruch 2, dadurch gekennzeichnet, daß die Oberfläche des Schichtträgers auf 2000C bis 3000C, vorzugsweise auf 250 bis 3000C, erwärmt wird.4. The method according to claim 2, characterized in that the surface of the layer support to 200 0 C to 300 0 C, preferably to 250 to 300 0 C, is heated.
DE2746967A 1977-10-19 1977-10-19 Electrophotographic recording drum Expired DE2746967C2 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE2746967A DE2746967C2 (en) 1977-10-19 1977-10-19 Electrophotographic recording drum
EP78100799A EP0001549B1 (en) 1977-10-19 1978-08-31 Method of manufacturing a photo-sensitive surface layer of a printing drum for an electrostatic photocopying process
DE7878100799T DE2862016D1 (en) 1977-10-19 1978-08-31 Method of manufacturing a photo-sensitive surface layer of a printing drum for an electrostatic photocopying process
AT741178A AT359828B (en) 1977-10-19 1978-10-16 PRINT DRUM FOR ELECTROSTATIC PHOTO COPYING
IT28816/78A IT1100321B (en) 1977-10-19 1978-10-17 PRINTING DRUM FOR ELECTROSTATIC PHOTOCOPYING PROCESS
CA000313556A CA1159702A (en) 1977-10-19 1978-10-17 Method for making photoconductive surface layer on a printing drum for electrostatic photocopying
US05/952,066 US4225222A (en) 1977-10-19 1978-10-17 Printing drum for an electrostatic imaging process with a doped amorphous silicon layer
JP12904678A JPS5478135A (en) 1977-10-19 1978-10-19 Electronic photographic printing drum and method of producing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2746967A DE2746967C2 (en) 1977-10-19 1977-10-19 Electrophotographic recording drum

Publications (2)

Publication Number Publication Date
DE2746967A1 DE2746967A1 (en) 1979-04-26
DE2746967C2 true DE2746967C2 (en) 1981-09-24

Family

ID=6021787

Family Applications (2)

Application Number Title Priority Date Filing Date
DE2746967A Expired DE2746967C2 (en) 1977-10-19 1977-10-19 Electrophotographic recording drum
DE7878100799T Expired DE2862016D1 (en) 1977-10-19 1978-08-31 Method of manufacturing a photo-sensitive surface layer of a printing drum for an electrostatic photocopying process

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE7878100799T Expired DE2862016D1 (en) 1977-10-19 1978-08-31 Method of manufacturing a photo-sensitive surface layer of a printing drum for an electrostatic photocopying process

Country Status (7)

Country Link
US (1) US4225222A (en)
EP (1) EP0001549B1 (en)
JP (1) JPS5478135A (en)
AT (1) AT359828B (en)
CA (1) CA1159702A (en)
DE (2) DE2746967C2 (en)
IT (1) IT1100321B (en)

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DE2746967A1 (en) 1979-04-26
AT359828B (en) 1980-12-10
EP0001549B1 (en) 1982-09-01
EP0001549A1 (en) 1979-05-02
IT7828816A0 (en) 1978-10-17
ATA741178A (en) 1980-04-15
US4225222A (en) 1980-09-30
CA1159702A (en) 1984-01-03
IT1100321B (en) 1985-09-28
DE2862016D1 (en) 1982-10-28
JPS5478135A (en) 1979-06-22

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