DE2743061A1 - Prodn. of dry electrolyte capacitor with tantalum anode - involves pressed and sintered tantalum powder anode dipped in metal ions contg. soln. and thermally treated - Google Patents
Prodn. of dry electrolyte capacitor with tantalum anode - involves pressed and sintered tantalum powder anode dipped in metal ions contg. soln. and thermally treatedInfo
- Publication number
- DE2743061A1 DE2743061A1 DE19772743061 DE2743061A DE2743061A1 DE 2743061 A1 DE2743061 A1 DE 2743061A1 DE 19772743061 DE19772743061 DE 19772743061 DE 2743061 A DE2743061 A DE 2743061A DE 2743061 A1 DE2743061 A1 DE 2743061A1
- Authority
- DE
- Germany
- Prior art keywords
- anode
- tantalum
- metal ions
- soln
- contg
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract description 19
- 239000003990 capacitor Substances 0.000 title claims abstract description 12
- 229910052715 tantalum Inorganic materials 0.000 title claims abstract description 12
- 229910021645 metal ion Inorganic materials 0.000 title claims abstract description 6
- 239000003792 electrolyte Substances 0.000 title description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052742 iron Inorganic materials 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- 239000010703 silicon Substances 0.000 claims abstract description 5
- -1 silicon ions Chemical class 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims abstract description 4
- 150000002739 metals Chemical class 0.000 claims abstract description 4
- 229910052759 nickel Inorganic materials 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 4
- 238000007669 thermal treatment Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000005245 sintering Methods 0.000 abstract description 2
- 229910000831 Steel Inorganic materials 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000003595 mist Substances 0.000 abstract 1
- 238000002791 soaking Methods 0.000 abstract 1
- 239000010959 steel Substances 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000012958 reprocessing Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Powder Metallurgy (AREA)
Abstract
Description
Verfahren zur Herstellung eines Festelektrolyt- Process for the production of a solid electrolyte
kondensators mit einer Tantalanode. capacitor with a tantalum anode.
Die Erfindung betrifft ein Verfahren zur Herstellung eines Festelektrolytkondensators mit einer Tantalanode. die mit Metallionen dotiert ist.The invention relates to a method for producing a solid electrolytic capacitor with a tantalum anode. which is doped with metal ions.
Aus der DT-OS 2 611 474 ist ein Verfahren zur Herstellung eines tiektrolytkondensators mit einer Tantalanode bekannt, die Molybdän enthält. Derartige Anodenkörper besitzen gute elektrische Eigenschaften, insbesondere bezüglich Gegenspannungsfestigkeit und überstrom. Da Tantal in der Natur immer seltener wird, sind die Tantalhersteller dazu übergegangen, den Ausschuß bei der Herstellung von Tantalfestelektrolytkondensatoren zurückzukaufen und wieder aufzubereiten. Dieser Rückkauf ist ein wichtiger Faktor in der Kalkulation bei der Herstellung derartiger Kondensatoren. Es hat sich nun gezeigt, daß die Wiederaufbereitung, d.h. die Wiedergewinnung reinen Tantalpulvers von mit Molybdän dotiertem Tantalpulver nur mit erheblichem Aufwand möglich ist.From DT-OS 2 611 474 there is a process for the production of a low-electrolytic capacitor known with a tantalum anode that contains molybdenum. Have such anode bodies good electrical properties, especially with regard to countervoltage resistance and overcurrent. Since tantalum is becoming increasingly rare in nature, the tantalum manufacturers are went over to the committee in the manufacture of tantalum solid electrolytic capacitors buy back and recycle. This buyback is an important factor in the calculation for the manufacture of such capacitors. It has now has shown that the reprocessing, i.e. the recovery of pure tantalum powder of tantalum powder doped with molybdenum is only possible with considerable effort.
Deshalb hat sich die Erfindung die Aufgabe gestellt, ein Verfahren zur Herstellung eines Festelcktrolytkondensators anzugeben, welches von handelsüblichem, reinem Tantalpulver ausgent, das nach der Sinterung zur Verbesserung der elektrischen Ei@@nschaften des Kondensators mit Metallen dotiert ivt. welche bei der Wiederaufbereitung s@hr leicht vom Tantal getrennt werden können.Therefore, the invention has set itself the task of a method to the To specify the manufacture of a solid-state electrolyte capacitor, which is made of commercially available, pure tantalum powder, which after sintering to improve the electrical The shafts of the capacitor are doped with metals. which during reprocessing s @ hr can easily be separated from the tantalum.
Diese Aufgabe wird erfindungsgemäß dadurch gelöst@ @a@ der aus handelsüblichem@ reinem Tantalpulver gepreßte und gesinterte Anodenkörper in eine @etallionen enthaltende Lösung getaucht wird die Eisen-, Nichel- Antimon- oder Siliziumionen enthält und der so dotierte Anodenkörper einer thermischen Behandlung unterworfen wird.According to the invention, this object is achieved by @ @ a @ the from commercially available @ Pure tantalum powder pressed and sintered anode body in a metal ion containing The solution that contains iron, nichel antimony or silicon ions is immersed the anode body doped in this way is subjected to a thermal treatment.
Die @otierungslösung kann die Eisen-, Nichel-, Antimon- oder Siliziumionen sowohl einzeln enthalten als auch aus einer Mischung aus diesen Elementen bestehen. Die thermische Behandlung der so dotierten Anodenköpers geschieht, vorzugsweise bei Temperaturen zwischen 200 °C und 800 °C. Während dieser Tempereturbehandlung können verschiedene Oxidstufen der Dotierungsmetalle durchlaufen werden.The ionizing solution can contain iron, nichel, antimony or silicon ions both contain individually and consist of a mixture of these elements. The anode body doped in this way is thermally treated, preferably at temperatures between 200 ° C and 800 ° C. During this temperature treatment different oxide stages of the doping metals can be passed through.
Die mit der Erfindung erzielte Vorteile liegen insbesonciere darin, daß die elektrischen Eigenschaften derartiger Tantalkondensatoren verbessert sind. Insbesondere ist die Wechselspannungsfestigkeit und die Gegenspannungsfestigkeit erhöht und die Temperaturabhängigkeit des Reststromes bei kleinerem Reststrom erniedrigt. Auch der Verlustwinkel tg # ist bei den nach dem erfindungsgemäßen Verfahren hergestellten Tantalfestelektrolytkondensatoren verkleinert.The advantages achieved with the invention are in particular: that the electrical properties of such tantalum capacitors are improved. In particular, the AC voltage strength and the counter voltage strength increases and the temperature dependency of the residual current is reduced with a smaller residual current. The loss angle tg # is also the same for those produced by the method according to the invention Tantalum solid electrolytic capacitors downsized.
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19772743061 DE2743061A1 (en) | 1977-09-24 | 1977-09-24 | Prodn. of dry electrolyte capacitor with tantalum anode - involves pressed and sintered tantalum powder anode dipped in metal ions contg. soln. and thermally treated |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19772743061 DE2743061A1 (en) | 1977-09-24 | 1977-09-24 | Prodn. of dry electrolyte capacitor with tantalum anode - involves pressed and sintered tantalum powder anode dipped in metal ions contg. soln. and thermally treated |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2743061A1 true DE2743061A1 (en) | 1979-03-29 |
Family
ID=6019810
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19772743061 Ceased DE2743061A1 (en) | 1977-09-24 | 1977-09-24 | Prodn. of dry electrolyte capacitor with tantalum anode - involves pressed and sintered tantalum powder anode dipped in metal ions contg. soln. and thermally treated |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE2743061A1 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2825424A1 (en) * | 1978-06-09 | 1979-12-20 | Fansteel Inc | Ductile tantalum semi-product - contains a small amt. of silicon; and is used for components produced by powder metallurgy |
| DE3309891A1 (en) * | 1983-03-18 | 1984-10-31 | Hermann C. Starck Berlin, 1000 Berlin | METHOD FOR PRODUCING VALVE METAL ANLANDS FOR ELECTROLYTE CAPACITORS |
| EP1093137A1 (en) * | 1999-02-16 | 2001-04-18 | Showa Denko Kabushiki Kaisha | Niobium powder, niobium sintered body, capacitor comprised of the sintered body, and method for manufacturing the capacitor |
| EP1156501A1 (en) * | 1999-10-01 | 2001-11-21 | Showa Denko K.K. | Capacitor powder composition, sintered body made of the composition, and capacitor made of the sintered body |
| US6660057B1 (en) | 1999-10-01 | 2003-12-09 | Showa Denko K.K. | Powder composition for capacitor, sintered body using the composition and capacitor using the sintered body |
-
1977
- 1977-09-24 DE DE19772743061 patent/DE2743061A1/en not_active Ceased
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2825424A1 (en) * | 1978-06-09 | 1979-12-20 | Fansteel Inc | Ductile tantalum semi-product - contains a small amt. of silicon; and is used for components produced by powder metallurgy |
| DE3309891A1 (en) * | 1983-03-18 | 1984-10-31 | Hermann C. Starck Berlin, 1000 Berlin | METHOD FOR PRODUCING VALVE METAL ANLANDS FOR ELECTROLYTE CAPACITORS |
| EP1093137A1 (en) * | 1999-02-16 | 2001-04-18 | Showa Denko Kabushiki Kaisha | Niobium powder, niobium sintered body, capacitor comprised of the sintered body, and method for manufacturing the capacitor |
| EP1093137A4 (en) * | 1999-02-16 | 2006-07-26 | Showa Denko Kk | Niobium powder, niobium sintered body, capacitor comprised of the sintered body, and method for manufacturing the capacitor |
| EP1156501A1 (en) * | 1999-10-01 | 2001-11-21 | Showa Denko K.K. | Capacitor powder composition, sintered body made of the composition, and capacitor made of the sintered body |
| EP1156501A4 (en) * | 1999-10-01 | 2002-10-23 | Showa Denko Kk | Capacitor powder composition, sintered body made of the composition, and capacitor made of the sintered body |
| US6660057B1 (en) | 1999-10-01 | 2003-12-09 | Showa Denko K.K. | Powder composition for capacitor, sintered body using the composition and capacitor using the sintered body |
| US7011692B2 (en) | 1999-10-01 | 2006-03-14 | Showa Denko K.K. | Powder composition for capacitor, sintered body using the composition and capacitor using the sintered body |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8127 | New person/name/address of the applicant |
Owner name: TELEFUNKEN ELECTRONIC GMBH, 7100 HEILBRONN, DE |
|
| 8131 | Rejection |