DE2741320A1 - Semiconductor component mounted on support - has heat sink over component and support part, with filling substance of high heat conductivity in between - Google Patents

Semiconductor component mounted on support - has heat sink over component and support part, with filling substance of high heat conductivity in between

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Publication number
DE2741320A1
DE2741320A1 DE19772741320 DE2741320A DE2741320A1 DE 2741320 A1 DE2741320 A1 DE 2741320A1 DE 19772741320 DE19772741320 DE 19772741320 DE 2741320 A DE2741320 A DE 2741320A DE 2741320 A1 DE2741320 A1 DE 2741320A1
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Germany
Prior art keywords
heat sink
electronic component
carrier
component
electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19772741320
Other languages
German (de)
Inventor
Wilfried Hehr
Eckhard Dr Ing Krueger
Bernd Rautzenberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Blaupunkt Werke GmbH
Original Assignee
Blaupunkt Werke GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Blaupunkt Werke GmbH filed Critical Blaupunkt Werke GmbH
Priority to DE19772741320 priority Critical patent/DE2741320A1/en
Publication of DE2741320A1 publication Critical patent/DE2741320A1/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/54—Providing fillings in containers, e.g. gas fillings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
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    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/85909—Post-treatment of the connector or wire bonding area
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/161—Cap
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    • H01L2924/3025—Electromagnetic shielding

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

A large surface heat sink n3) is mounted over the semiconductor component (1) and over a part of the support (2). The intermediate space between the heat sink and the component is filled with a cover substance (4) of high thermal conductivity. Preferably the semiconductor component and its lead wires (5, 6) are coated with a thin visco-elastic protective layer (7), over which the cover substance is applied. The latter is filled in through an aperture (8) in the heat sink.

Description

Dte volluegeude Enfindung betrifft ein auf einem Träger festgelegtesThe complete invention relates to one that is fixed on a carrier

elektronischbes Bauelement.electronic component.

Im Rahmen der Mioiatunsierung elektronische Schaltkreise werden die Halbleiterbauelemente auf einem mit Leitungsbahnen und pasiven Bauelemente versehenen Träger beispielsweise durch Kleben festgelegt und durch sogenanntes Bonden mit den Leitungshahnen elektrisch verbunden.As part of the millionisation of electronic circuits, the Semiconductor components on one provided with conductor tracks and passive components Carrier set for example by gluing and by so-called bonding with the Line taps electrically connected.

Die beim Betrieb der Halbleiterbauelemente als Wärme auftretende Verlustleistung wird über den Träger abgeführt. Um diese Wärmeableitung zu erhöhen, werden häufig Keramikträger verwendet.The power loss that occurs as heat during operation of the semiconductor components is discharged via the carrier. To increase this heat dissipation, are common Ceramic carrier used.

Dabei hat es sich jedoch als nachteilig erwiesen, daß in dieser Weise aufgebaute elektronische Schaltkreise nur für halbleiterbauelemente mit kleinen Verlustleistungen geeignet sind. Bei höheren Verlustleistungen ist die Wärmeableitung iiber die Träger insbesondere aufgrund ihres zu kleinen Querschnitts unzureichend. Somit werden die Halbleiterbauelemente häufig durch Überschreiten der zulässigen Betriebstemperaturen zerstört.However, it has proven to be disadvantageous that in this way built-up electronic circuits only for semiconductor components with small Power losses are suitable. In the case of higher power losses, the heat dissipation is Inadequate over the girders, in particular due to their cross-section being too small. Thus, the semiconductor components are often exceeded by exceeding the permissible Operating temperatures destroyed.

Es stellt sich daher die Aufgabe, ein auf einem Träger festgelegtes elektronisches Bauclement zu entwickeln, bei dem auch große Verlustleistungen abgeführt werden können und durch damit verbundene geringe Betriebstemperaturen eine Schädigung des elektronischen Bauelements vermieden wird.It is therefore the task of a fixed on a carrier to develop electronic component, which also dissipates large power losses and damage due to the associated low operating temperatures of the electronic component is avoided.

Diese Aufgabe wird gemäß der vorliegenden Erfindung dadurch gelöst.This object is achieved according to the present invention.

daß über dem elektronischen Bauelement und über Teilbereichen des Trägers ein großflächiger Kühlkörper angeordnet ist und der Zwischenraum zwischen dem großflächigen Kühlkörper und dem elektronischen Bauelement durch eine den großflächigen Kühlkörper und das elektronische bauelement flächig bedeckende zusammenhängende Abdeckmasse hoher Wärmeleitfähigkeit ausgefüllt ist.that over the electronic component and over parts of the Carrier a large-area heat sink is arranged and the space between the large-area heat sink and the electronic component through one of the large-area Coherent heat sink and the electronic component flat covering Covering compound of high thermal conductivity is filled.

In einer vorteilhaften Ausgestaltung der Erfindung sind das eleitronische Bauelement und dessen AnschluBdrähte nit einer dünnen viskoelastischen Schutzschicht überdeckt.In an advantageous embodiment of the invention, these are electronic Component and its connecting wires with a thin viscoelastic protective layer covered.

Bei einer günstigen Ausbildung der Erfindung wird der Zwischenraum zwischen dem großflächigen Kühlkörper und dem elektronischen Bauelement durch eine im großflächigen Kühlkörper über dem elektronischen Bauelement vorgesehene Öffnung mit der Abdeckmasse hoher Wlrieleitfähigkeit ausgefüllt.In a favorable embodiment of the invention, the space between the large heat sink and the electronic component by a Opening provided in the large-area heat sink above the electronic component filled with the covering compound of high thermal conductivity.

Dazu wird gemäß einer Weiterbildung der Erfindung in die Öffnung eine Düse eingesetzt, deren Länge so be essen ist, daß die Düse das elektronische Bauelement nicht berührt und der Zwischenraum zwischen dem großflächigen Kühlkörper und dem elektronischen Bauelement durch diese Düse mit der Abdeckmasse hoher Wlrieleitfihigkeit eusgefüllt ist.For this purpose, according to a development of the invention, a Nozzle used, the length of which is so be eat that the nozzle the electronic component not touched and the space between the large heat sink and the electronic component through this nozzle with the covering compound of high Wlrieleitfihigkeit e is filled.

Dabei ist es vorteilhaft, den Zwischenraum zwischen dem großflächigen Küblkörper und dein elektronischen Bauelement mit einer aushärtenden Abdeckmasse hoher Wärmeleitfähigkeit auszufüllen.It is advantageous to use the space between the large Küblkörper and your electronic component with a hardening covering compound high thermal conductivity.

In einer weiteren Ausgestaltung der Erfindung wird der großflächige Kühlkörper mit Befestigungselementen auf dem Träger festgelegt.In a further embodiment of the invention, the large-area Heat sink with fasteners fixed on the carrier.

Die Befestigungselemente sind in einer Weiterbildung der Erfindung al Rande des großflächigen Kühlkörpers als Distanzstücke mit Zungen ausgebildet. Diese Zungen werden in Durchbrüche des Trägers eingefügt und mit dem Träger unlösbar verbunden.The fastening elements are in a development of the invention al edge of the large-area heat sink designed as spacers with tongues. These tongues are inserted into openings in the carrier and are inseparable from the carrier tied together.

So können die Zungen gemäß einer vorteilhaften Ausbildung der Erfindung durch Tauchlöten mit Leitungsbahnen des Trägers unlösbar verbunden werden. Zur Abschirmung des elektronischen Bauelerenta gegen störende elektromagnetische Felder kann der großflächige Kühlkörper auf Massepotential gelegt werden.Thus, according to an advantageous embodiment of the invention, the tongues be permanently connected by dip soldering with conductor tracks of the carrier. For shielding the electronic Bauelerenta against disruptive electromagnetic fields can large-area heat sinks are connected to ground potential.

Die Vorteile der vorliegenden Erfindung liegen insbesondere darin, daß das elektronische Bauelement bei einer sehr wirksamen Kühlung durch die Abdeckmasse hoher Wärmeleitfähigkeit und den Kühlkörper durch die Abdeckmasse zugleich vor störenden mechanischen und chemischen Einflüssen geschützt ist. Darüber hinaus kann auf eine. speziellen Träger aus gut wärmeleitendem Material, beispielsweise einen Keramikträger, verzichtet werden.The advantages of the present invention are in particular that that the electronic component with a very effective cooling by the covering compound high thermal conductivity and the heat sink through the covering material at the same time from disruptive mechanical and chemical influences is protected. In addition, a. special carrier made of a material that conducts heat well, for example a ceramic carrier, be waived.

Die Erfindung wird nachfolgend an einer Figur, in der ein auf einei Träger festgelegtes elektronisches Bauelment mit einem über dem elektro nischen Baueklement und dem Träger angeordneten großflächigen Kühlkörper und mit dem Zwischenraum zwischen dem Träger und dem elektronischen Bauelement ausfüllender zusammenhängender Abdeckmasse im Schnitt dargestellt ist, näher erläutert.The invention is illustrated below in a figure in which an on one i Carrier fixed electronic component with one above the electronic one Baueklement and the carrier arranged large heat sink and with the space between the carrier and the electronic component filling-in coherent Covering compound is shown in section, explained in more detail.

Dabei zeigt 1 das elektronische Bauelement, beispielsweise einen hochintegrierten Halbleiterchip, welches mit seinen Anschlußdrähten 5 und 6 durch sogenanntes Bonden mit den auf dem Träger 2 aufgebrachten Leitungsbahnen 12 und 13 elektrisch verbunden und auf dem Träger 2 beispielsweise durch Kleben festgelegt ist. Der das elektronische Bauelement 1 und den Träger 2 überdeckende großflächige iffhlkörper ist an seinem Rand mit Befestigungselementen, die als Distaustücke 9 mit jeweils einer Zunge 10 ausgebildet sind, versehen. Mit den Zungen 10 greift der großfiächige Kühlkörper 3 in dafür vorgesehene Durchbrüche 11 im Träger 2. Die Zungen 10 können in nicht näher dargestellter Weise, beispielsweise durch Kleben oder Löten, mit dem Träger 2 unlösbar verbunden sein. So können die Zungen 10 mit nicht näher dargestellten Leitungsbahnen des Trägers 2 durch Tauchlöten unslösbar verbunden werden.1 shows the electronic component, for example a highly integrated one Semiconductor chip, which with its connecting wires 5 and 6 by so-called bonding electrically connected to the conductor tracks 12 and 13 applied to the carrier 2 and is fixed on the carrier 2, for example by gluing. The electronic one Component 1 and the carrier 2 covering large-area iffhlkörper is on his Edge with fastening elements, which are formed as distal pieces 9, each with a tongue 10 are formed, provided. The large-area heat sink engages with the tongues 10 3 in openings 11 provided for this purpose in the carrier 2. The tongues 10 cannot in in the manner shown in more detail, for example by gluing or soldering, to the carrier 2 must be inextricably linked. So the tongues 10 with not shown Conductive paths of the carrier 2 are connected in a non-detachable manner by dip soldering.

Ferner kann der großflächige Kühlkörper 3 auf Massepotential gelegt werden, wodurch das elektronische Bauelement 1 vor störenden elektromagnetischen Feldern abgeschirmt wird.Furthermore, the large-area heat sink 3 can be connected to ground potential be, whereby the electronic component 1 from disturbing electromagnetic Fields is shielded.

D@@@ lekt@@@@s@@ @@@ lement 1 und seine Anschlußdrähte 5 und 6 sind mit @@@@@ du@@@@@, heispielsweise aus Silikon bestehenden, viskoelastischen Scbutzschicht 7 überdeckt. Diese viskoelastische Schutzschicht 7 scbützt das elektronische Bauelement 1 vor störenden chemischen Binflüssen, die beispielsweise von de Abdeckmasse 4 ausgehen k@nnen. Darüber hinaus werden die durch die unterschiedlichen Temperatur@oett@zienten des bauelements 1 und der Abdeckmasse 4 bedingten voneinander abweichenden termischen Ausdehnungen des Bauelements 1 und der Abdeckmasse 4 durch die viskoelastische Schutzschicht 7 ausgeglichen. Dadurch besitzt die gesamte Anordnung eine sehr gute Temperaturwechselbestandigkeit und das elektronische Bauelement läßt sich auch in Zyklen betreiben. Dabei behindert die dünne viskoelastische Schutzschicht 7 len Wirmei luil vom elektronischen Bauelement 1 zur Abdeckmasse 4 nicht.D @@@ lekt @@@@ s @@ @@@ lement 1 and its connecting wires 5 and 6 are with @@@@@ du @@@@@, for example a viscoelastic protective layer made of silicone 7 covered. This viscoelastic protective layer 7 protects the electronic component 1 against disruptive chemical influences that emanate from the covering compound 4, for example can. In addition, the different temperature @ oett @ cients of the component 1 and the covering compound 4 due to differing terms Expansion of the component 1 and the covering compound 4 through the viscoelastic protective layer 7 balanced. As a result, the entire arrangement has a very good resistance to temperature changes and the electronic component can also be operated in cycles. In doing so, handicapped the thin viscoelastic protective layer 7 len Wirmei luil from the electronic component 1 for covering compound 4 does not.

Der Raum zwischen dem elektronischen Bauelement 1 und dem großflächigen Kühlkörper 3 ist mit der zusammenhängenden Abdeckmasse 4 hoher Wärmeleitfähigkeit ausgefüllt. Dabei bedeckt die Abdeckmasse 4 den Kühlkörper 3 großtlächig und das elektronische Bauelement 1 vollständig.The space between the electronic component 1 and the large area Heat sink 3 is with the coherent covering compound 4 of high thermal conductivity filled out. The covering compound 4 covers the heat sink 3 over a large area and that electronic component 1 completely.

Auf diese Weise wird ein sehr guter Wärmeübergang zwischen dem elektronischen Bauelement 1 und der Abdeckmasse 4 und zwischen der Abdeckmasse 4 und dem roßflächigen Kühlköroer 3 gewährleistet. Die Abdeckmasse 4 läßt sich durch eine Öffnung 8 Kühlkörper 3 in den Zwischenraum zwischen dem Bauelement 1 und dem Kühlkörper 3 beispielsweise mit Hilfe einer in die Öffnung 8 eingesetzten Düse einfüllen.This way there is very good heat transfer between the electronic Component 1 and the covering compound 4 and between the covering compound 4 and the roßflächenigen Cooling body 3 guaranteed. The covering compound 4 can be heatsinked through an opening 8 3 in the space between the component 1 and the heat sink 3, for example Fill with the aid of a nozzle inserted in the opening 8.

Als wärme le itente Abde@kmasse sind beispielsweise Zweikomponentenkunstharze, die unter wärmeeinfluß aushärten, geeignet. Dabei sind wegen jh@er großen Wärmieleit fähigkeit metalloxydgefüllte Kunstharze besonders vonteilhaft.For example, two-component synthetic resins, which harden under the influence of heat are suitable. Thereby are great heat conduction because of jh @ er ability of metal oxide-filled synthetic resins to be particularly beneficial.

Als material für den Kühlkörper 3 sind die Metalle Kupfer und Aluminium besonders gut eeinet. Zur Yerbesserung der Wärmeabstrahlung des Kiihlkërptrs 3 kann dessen E issionsvennogeQ durch eine geeignete Oberflächenbebandlung, beispielsweise eine Färbung, erhöht werden.The metals copper and aluminum are used as the material for the heat sink 3 eeinet particularly well. To improve the heat radiation of the Kiihlkërptrs 3 can its E issionsvennogeQ by a suitable surface treatment, for example a coloring, can be increased.

Claims (8)

bieltronisches Rauelement Ansprüche 1. Auf einem Träger festgelegtes elektronischesBauelement, dadurch gekennzeichnet, daß jiber dem elektronischen Bauelement (1) und über Teilbereichen des Tragers (2) ein großflächiger Kühlkörper (3) angeoprdnet ist uni der Zwischenraum zwischen dem großflächigen Kühlkirper (3) und dem elektronischen Bauelement (1) durch eine den großflächigen Kühlkörper (3) und das elektronische Baulement (1) flächig bcdeckende zusammenhängende Abdeckmasse (4) hoher Wärmeleitfähigkeit ausgefüllt ist. Bieltronisches Rauelement Claims 1. Fixed on a carrier Electronic component, characterized in that over the electronic component (1) and a large-area heat sink (3) attached over parts of the support (2) is the space between the large-area cooling body (3) and the electronic one Component (1) through a large heat sink (3) and the electronic Construction element (1) flat covering, cohesive covering compound (4) of high thermal conductivity is filled out. 2. Baulement nach Anspruch 1, dadurch gekennzeichnet, daß das elektronische Hauelement (1) und dessen Anschlußdrähte (5, 6) mit einer dünnen viskoelastischen Schutzschicht (7) überdeckt sind und die Abde (4) den Raum zwischen dieser Schutzschicht (7) und dem Kühlkörper (3) aufüllt.2. Component according to claim 1, characterized in that the electronic Hauelement (1) and its connecting wires (5, 6) with a thin viscoelastic Protective layer (7) are covered and the Abde (4) the space between this protective layer (7) and the heat sink (3). 3. Verfahren zur Herstellung eines auf einem Träger festgelegten elektronischen Bauelements nach den Ansprüchen 1 und 2, dadurch gekennzeichnet, daß der Zwischenraus zwischen dem großflachigen Kühlkörper (3) und dem elektronischen Bauelement (1) durch eine im großflächigen Kühlkörper (3) über dem elektronischen Bauelement (1) vorgesehene Öftoung (8) mit der Abdeckmasse (4) hoher Wärmeleitfähigkeit ausgefüllt wird.3. Process for the production of an electronic device fixed on a carrier Component according to Claims 1 and 2, characterized in that the intermediate space between the large-area heat sink (3) and the electronic component (1) by one in the large-area heat sink (3) above the electronic component (1) provided Öftoung (8) filled with the covering compound (4) of high thermal conductivity will. 4. Verfahren nach Anspruch 1 bis 3, dadurch gekennzeichnet, daß in die Öffnung (8) eine Düse eingesetzt wird, deren Länge so bemessen ist, daß die Düse das elektronische Bauelement (1) nicht berührt und daß der Zwischenraum zwischen den großflächigen Kühlkörper (3) und dem elektronischen Bauelement (1) durch diese Düse mit der Abdeckmasse (4) hoher Wärmeleitfähigkeit ausgefüllt wird. 4. The method according to claim 1 to 3, characterized in that in the opening (8) a nozzle is used, the length of which is such that the Nozzle does not touch the electronic component (1) and that the space between the large-area heat sink (3) and the electronic component (1) through this The nozzle is filled with the covering compound (4) of high thermal conductivity. 5. 5 Verfahren nach den Ansprüchen 3 und 4, dadurch gekennzeichnet, daß eine aushärtende Abdeckmase (4) verwendet wird.5. 5 method according to claims 3 and 4, characterized in that that a hardening masking compound (4) is used. 6. Verfahren nach den Ansprüchen 3 bis 5, dadurch gekennzeichnet, daß der großflächige Kühlkörper (3) rit Befestigungselementen (9, 10) auf dem Träger (2) festgelegt wird. 6. The method according to claims 3 to 5, characterized in that that the large-area heat sink (3) rit fastening elements (9, 10) on the carrier (2) is established. 7. Verfahren nach den Ansprüchen 3 bis 6, d a d u r c h g e k e n n z e i c h n e t, daß die Befestigungselemente ai Rsnde des großflächigen Kühlkörper. (3) als Distanzstücke (9) mit Zungen (10) ausgebildet, diese Zungen (10) in Durchbrüche (11) des Trägers (2) eingefügt und mit dc. Trigger (2) unlösbar verbunden werden. 7. The method according to claims 3 to 6, d a d u r c h g e k e n It should be noted that the fastening elements are the edges of the large-area heat sink. (3) designed as spacers (9) with tongues (10), these tongues (10) in openings (11) of the carrier (2) inserted and dc. Trigger (2) are permanently connected. 8. Verfahren nach den Ansprüchen 3 bis 7, dadurch gekennzeichnet, daß die Zungen (10) durch Tauchlöten iit Leitungsbahnen des Trigers (2) unlösbar verbunden werden.8. The method according to claims 3 to 7, characterized in that that the tongues (10) cannot be released by dip soldering iit conductive paths of the trigger (2) get connected.
DE19772741320 1977-09-14 1977-09-14 Semiconductor component mounted on support - has heat sink over component and support part, with filling substance of high heat conductivity in between Withdrawn DE2741320A1 (en)

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DE19772741320 DE2741320A1 (en) 1977-09-14 1977-09-14 Semiconductor component mounted on support - has heat sink over component and support part, with filling substance of high heat conductivity in between

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DE19772741320 DE2741320A1 (en) 1977-09-14 1977-09-14 Semiconductor component mounted on support - has heat sink over component and support part, with filling substance of high heat conductivity in between

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DE2741320A1 true DE2741320A1 (en) 1979-03-22

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107820376A (en) * 2016-09-14 2018-03-20 株式会社捷太格特 Electronic-controlled installation
JP2018050011A (en) * 2016-09-14 2018-03-29 株式会社ジェイテクト Electronic control device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107820376A (en) * 2016-09-14 2018-03-20 株式会社捷太格特 Electronic-controlled installation
EP3297021A1 (en) * 2016-09-14 2018-03-21 Jtekt Corporation Electronic control device
JP2018050011A (en) * 2016-09-14 2018-03-29 株式会社ジェイテクト Electronic control device
US10420255B2 (en) 2016-09-14 2019-09-17 Jtekt Corporation Electronic control device

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