DE2723500C2 - Process for depositing silicon dioxide layers on semiconductor devices - Google Patents
Process for depositing silicon dioxide layers on semiconductor devicesInfo
- Publication number
- DE2723500C2 DE2723500C2 DE2723500A DE2723500A DE2723500C2 DE 2723500 C2 DE2723500 C2 DE 2723500C2 DE 2723500 A DE2723500 A DE 2723500A DE 2723500 A DE2723500 A DE 2723500A DE 2723500 C2 DE2723500 C2 DE 2723500C2
- Authority
- DE
- Germany
- Prior art keywords
- silicon dioxide
- approx
- semiconductor wafers
- dioxide layers
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
Die Erfindung betrifft ein Verfahren gemäß dem Oberbegriff des Patentanspruches 1. Ein derartiges Verfahren ist aus »Journal of the Electrochemical Society« Febr. 64, S. 206—209 bekannt. Als Trägergas wird bei dem bekannten Verfahren mit einer Abscheidungstemperatur von ca. 1200°C Wasserstoff verwendet, das zugleich ein Reaktionspartner ist. Bei dem bekannten Verfahren wird jeweils nur eine Scheibe beschichtet. Ferner ist ein Verfahren zum pyrolythischen Abscheiden von Siliziumdioxydschichten bekannt, bei dem Silan (S1H4) chemisch umgesetzt wurde. Dieses Verfahren hat ebenfalls den Nachteil, daß die Reaktoren relativ geringe Aufnahmekapazitäten haben. Außerdem wiesen die so hergestellten Schichten nicht die gewünschte Gleichmäßigkeit der Dicke auf. Ferner ist das Arbeiten mit Silan mit Sicherheitsproblemen verbunden, da bei verschiedenen Silanen mit höherer Konzentration Explosionsgefahr besteht. Dies gilt insbesondere für das gleichfalls verwendete Dichlorsilan (Si^Cb)-The invention relates to a method according to the preamble of claim 1. Such a method is known from "Journal of the Electrochemical Society" Feb. 64, pp. 206-209. The carrier gas is the known process with a deposition temperature of approx. 1200 ° C hydrogen used, which at the same time is a reactant. In the known method, only one pane is coated at a time. Further a process for the pyrolytic deposition of silicon dioxide layers is known in which the silane (S1H4) has been chemically converted. This process also has the disadvantage that the reactors are relatively small Have recording capacities. In addition, the layers produced in this way did not have the desired uniformity the thick one. Furthermore, working with silane is associated with safety problems, since various There is a risk of explosion for silanes with a higher concentration. This is especially true for that as well used dichlorosilane (Si ^ Cb) -
Aus der Zeitschrift »TELEFUNKEN Röhre«, Dez. 67, Nr. 47, S. 103—122, ist auch ein Oxydationsverfahren bei Temperaturen über 1000°C und Normaldruck bekannt, bei dem als Reaktionsgase Siliziumtetrachlorid und Wasserdampf verwendet werden. Die Gleichmäßigkeit der abgeschiedenen Schichten ist aber bei diesem Verfahren noch befriedigend.From the journal "TELEFUNKEN Röhre", Dec. 67, No. 47, pp. 103-122, there is also an oxidation process known at temperatures above 1000 ° C and normal pressure, with silicon tetrachloride as reaction gases and steam can be used. The evenness of the deposited layers is, however still satisfactory with this method.
Aus der US-PS 36 50 929 ist ein Plasmaoxydationsverfahren bei Unterdruck bekannt. Der Unterdruck ist hierbei ausschließlich zur Ermöglichung der Gasentladung erforderlich. Die Oxydation erfolgt mit Hilfe eines Sauerstoffstroms. Auch bei diesem Verfahren werden nur einzelne Scheiben beschichtet.From US-PS 36 50 929 a plasma oxidation process under negative pressure is known. The negative pressure is in this case only required to enable gas discharge. The oxidation takes place with the help of a Oxygen flow. In this process, too, only individual panes are coated.
Der vorliegenden Erfindung liegt die Aufgabe zugrunde, ein Abscheidungsverfahren nach dem Oberbegriff des Anspruches 1 anzugeben, das eine große Fertigungskapazität ermöglicht und gleichmäßig dicke, gut reproduzierbare Schichten liefert Diese Aufgabe wird durch ein Verfahren gemäß dem kennzeichnenden Teil des Patentanspruches 1 gelöstThe present invention is based on the object of a deposition method according to the preamble of claim 1 to indicate that allows a large production capacity and evenly thick, good reproducible layers provides This object is achieved by a method according to the characterizing part of claim 1 solved
Es ist zwar aus der DE-OS 24 31 917 ein Verfahren bekannt bei dem bei einem Druck von 10—650 mbar und einer Temperatur von 600—900° K Glasschichten aus einem Gasgemisch von Silan und Sauerstoff abgeschieden werden. Bei diesem Verfahren entstehen jedoch keine aggressiven Nebenprodukte.A method is known from DE-OS 24 31 917 in which at a pressure of 10-650 mbar and a temperature of 600-900 ° K glass layers are deposited from a gas mixture of silane and oxygen will. However, this process does not produce any aggressive by-products.
Ferner ist aus der US-PS 36 15 956 ein Verfahren bekannt bei dem Halbleiterscheiben senkrecht stehend und parallel zueinander in großer Anzahl in einem langgestreckten Reaktionsgefäß angeordnet sind. Hierbei handelt es sich jedoch um ein Plasmaätzverfahren, bei dem bei dem herrschenden Unterdruck nur geringe Mengen von Siliziumtetrachlorid entstehen.Furthermore, from US-PS 36 15 956 a method is known in the case of semiconductor wafers standing vertically and parallel to one another in large numbers in an elongated manner Reaction vessel are arranged. However, this is a plasma etching process only small amounts of silicon tetrachloride are produced at the prevailing negative pressure.
Als Trägergas für den Wasserdampf wird vorzugsweise Stickstoff verwendet. Stickstoff als Trägergas für andere Reaktionspartner ist ansich aus den DE-OS 20 52 221 und DE-OS 24 31 917 bereits bekanntNitrogen is preferably used as the carrier gas for the water vapor. Nitrogen as a carrier gas for other reaction partners are already known from DE-OS 20 52 221 and DE-OS 24 31 917
Bei einer zur Durchführung des Verfahrens geeigneten Vorrichtung ist das eine Ende dieses Rohres mit den regelbaren Zuführungsmiiteln für die verschiedenen notwendigen Gase verbunden. Das erfindungsgemäße Verfahren ist besonders zur Herstellung von Maskierungs und/oder Passivierungsschichten aus Siliziumdioxyd auf Halbleiterscheiben geeignet Dies können somit Schichten sein, die als Maske für Diffusionsprozesse oder als Träger für Leitbahnsysteme dienen.In a device suitable for carrying out the method, one end of this tube is connected to the controllable supply means for the various necessary gases connected. The inventive Process is particularly useful for the production of masking and / or passivation layers from silicon dioxide suitable on semiconductor wafers. These can therefore be layers that act as masks for diffusion processes or serve as a carrier for interconnect systems.
Bei dem erfindungsgemäßen Verfahren ist von Bedeutung, daß der Vakuumpumpe ein Filter vorgeschaltet wird. Es hat sich gezeigt, daß bei einem Verzicht auf dieses Filter die Vakuumpumpe in kürzester Zeit zerstört wird. Dieses Filter ist aufgeteilt in ein Kühlfilter und in ein Staubfilter.In the method according to the invention it is important that a filter is connected upstream of the vacuum pump will. It has been shown that if this filter is not used, the vacuum pump is destroyed in a very short time will. This filter is divided into a cooling filter and a dust filter.
Das erfindungsgemäße Verfahren soll im weiteren noch anhand eines geeigneten Ausführungsbeispieles näher erläutert werden.The method according to the invention is also intended to be based on a suitable exemplary embodiment are explained in more detail.
In der Figur ist ein langgestrecktes Abscheidungsrohr 1 dargestellt, das vorzugsweise aus Quarz besteht und mit einer Heizwicklung 2 auf die gewünschte Temperatur gebracht werden kann. In dem Rohr können ca. 400 bis 500 Halbleiterscheiben 3 senkrecht stehend parallel zueinander angeordnet werden. Diese Aufnahmekapazität übersteigt die der herkömmlichen Silan-Reaktoren um den Faktor 20. An das eine Ende des Rohres sind Strömungsmesser für die Zuführung der erforderlichen Gase angeschlossen. Mit dem einen Strömungsmesser wird die Durchflußmenge des Siliziumtetrachlorids eingestellt, während mit dem anderen Strömungsmesser die zugeführte Menge an heißem Wasserdampf geregelt wird. Als Trägergas für den Wasserdampf dient Stickstoff, der durch erhitztes bzw. kochendes Wasser hindurchgeleitet wird.In the figure is an elongated separation tube 1 shown, which is preferably made of quartz and with a heating coil 2 to the desired temperature can be brought. Approx. 400 to 500 semiconductor wafers 3 can stand perpendicularly in parallel in the tube be arranged to each other. This capacity exceeds that of conventional silane reactors by a factor of 20. At one end of the pipe are flow meters for feeding the necessary Gases connected. The flow rate of the silicon tetrachloride is set with one flow meter, while the other flow meter regulates the amount of hot steam supplied will. The carrier gas for the water vapor is nitrogen, which is passed through heated or boiling water will.
Am anderen Ende des Abscheidungsrohres ist ein Druckregler angeschlossen, der Ungleichmäßigkeiten der Vakuumpumpe ausgleicht. Zwischen den Druckregler und die Vakuumpumpe sind Filter geschaltet, die das abgesaugte Gasgemisch kühlen und von Staubpartikeln, beispielsweise von Siliziumdioxydparlikeln oder Kieselsäurepartikeln, befreien. Diese Staubteile dürfen nicht in die Vakuumpumpe gelangen, da diese sonst bereits nach kurzer Zeit mechanisch zerstört werden würde.At the other end of the separation pipe a pressure regulator is connected to the irregularities the vacuum pump compensates. Filters are connected between the pressure regulator and the vacuum pump to allow the Cool the extracted gas mixture and remove dust particles, for example from silicon dioxide or silicic acid particles, to free. These dust particles must not get into the vacuum pump, otherwise they will already after would be mechanically destroyed in a short time.
Bei einem bevorzugten Ausführungsbeispiel wurden dem Abscheidungsrohr 200 mg/min Siliziumtetrachlorid und ca. 50 bis 100 l/h durch erhitztes Wasser geleite-In a preferred embodiment, 200 mg / min of silicon tetrachloride was added to the separation tube and approx. 50 to 100 l / h through heated water
ter Stickstoff zugeführt. Im Abscheidungsrohr herrschte dabei eine Temperatur zwischen 85O0C und 925° C bei einem Druck von 0,65—1,95 mbar. Hierbei scheidet sich auf den Halbleiterscheiben eine Siliziumdioxydschicht mit einer Wachstumsrate von 10 bis 50 nm/min ab. Es wurden Schichtdicken erzeugt, die zwischen 0,1 bis 4 μπι liegen. Die Abscheidungsrate kann durch Änderung der Ofentemperatur Gaszusammensetzung und der Gastemperatur zwischen ca. 2 bis 200 nm/min variiert werden. Während des Abscheidungsprozesses setzt sich Si- ίο liziumtetrachlorid mit Wasserdampf um und bildet Siliziumdioxyd und weitere flüchtige Gase.ter nitrogen supplied. In the deposition tube is at a temperature between 85O 0 C and 925 ° C prevailed a pressure of 0.65 to 1.95 mbar. A silicon dioxide layer is deposited on the semiconductor wafers at a growth rate of 10 to 50 nm / min. Layer thicknesses between 0.1 and 4 μm were generated. The deposition rate can be varied between approx. 2 to 200 nm / min by changing the furnace temperature, gas composition and the gas temperature. During the deposition process, silicon tetrachloride reacts with water vapor and forms silicon dioxide and other volatile gases.
Mit dem beschriebenen Verfahren konnten die Schwankungen in der Gleichmäßigkeit der Schichtdicke auf weniger als 3% beschränkt werden. Auch bei aufeinanderfolgenden Chargen lagen die Schwankungen in der Schichtdicke unter 5%.With the method described, the fluctuations in the uniformity of the layer thickness could be avoided be limited to less than 3%. Even with successive batches, the fluctuations were in the layer thickness below 5%.
Das neue Herstellungsverfahren für die Siliziumdioxydschichten ist sehr kostengünstig, da die Gerätekosten und die Materialkosten für die Gase äußerst niedrig sind. Da außerdem keinerlei Sicherheitsvorkehrungen notwendig sind und die Durcnlaufkapazität — wie bereits erwähnt — erheblich gesteigert werden konnte, ließen sich die Herstellungkosten gegenüber bekannten Verfahren um den Faktor 40 reduzieren.The new manufacturing process for the silicon dioxide layers is very inexpensive, since the equipment costs and the material costs for the gases are extremely low . Since, in addition, no safety precautions are necessary and the throughflow capacity - as already mentioned - could be increased considerably, the production costs could be reduced by a factor of 40 compared to known methods.
Hierzu 1 Blatt Zeichnungen1 sheet of drawings
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Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2723500A DE2723500C2 (en) | 1977-05-25 | 1977-05-25 | Process for depositing silicon dioxide layers on semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2723500A DE2723500C2 (en) | 1977-05-25 | 1977-05-25 | Process for depositing silicon dioxide layers on semiconductor devices |
Publications (2)
Publication Number | Publication Date |
---|---|
DE2723500A1 DE2723500A1 (en) | 1978-11-30 |
DE2723500C2 true DE2723500C2 (en) | 1984-08-30 |
Family
ID=6009771
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE2723500A Expired DE2723500C2 (en) | 1977-05-25 | 1977-05-25 | Process for depositing silicon dioxide layers on semiconductor devices |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE2723500C2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5694751A (en) * | 1979-12-28 | 1981-07-31 | Fujitsu Ltd | Vapor growth method |
DE3330864A1 (en) * | 1983-08-26 | 1985-03-14 | Siemens AG, 1000 Berlin und 8000 München | Apparatus for depositing silicon oxide layers on semiconductor substrates using a CVD coating technique |
DE3330865A1 (en) * | 1983-08-26 | 1985-03-14 | Siemens AG, 1000 Berlin und 8000 München | Apparatus for depositing silicon oxide layers on semiconductor substrates using a CVD coating technique |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3650929A (en) * | 1963-08-16 | 1972-03-21 | Licentia Gmbh | Oxidizing method and apparatus |
US3615956A (en) * | 1969-03-27 | 1971-10-26 | Signetics Corp | Gas plasma vapor etching process |
US3647535A (en) * | 1969-10-27 | 1972-03-07 | Ncr Co | Method of controllably oxidizing a silicon wafer |
DE2431917A1 (en) * | 1974-07-03 | 1976-01-22 | Bbc Brown Boveri & Cie | Semiconductor, element with passivating layers - of silica, phosphate and borate glass, giving good electrical and mechanical properties |
-
1977
- 1977-05-25 DE DE2723500A patent/DE2723500C2/en not_active Expired
Also Published As
Publication number | Publication date |
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DE2723500A1 (en) | 1978-11-30 |
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Owner name: TELEFUNKEN ELECTRONIC GMBH, 7100 HEILBRONN, DE |
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Free format text: LAESSING, GERHARD, 7100 HEILBRONN, DE HILGARTH, HANNELORE, 7101 FLEIN, DE |
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