DE2233654A1 - THERMAL DECOMPOSABLE MATERIAL FOR THE PRODUCTION OF ELECTRICAL RESISTORS - Google Patents
THERMAL DECOMPOSABLE MATERIAL FOR THE PRODUCTION OF ELECTRICAL RESISTORSInfo
- Publication number
- DE2233654A1 DE2233654A1 DE19722233654 DE2233654A DE2233654A1 DE 2233654 A1 DE2233654 A1 DE 2233654A1 DE 19722233654 DE19722233654 DE 19722233654 DE 2233654 A DE2233654 A DE 2233654A DE 2233654 A1 DE2233654 A1 DE 2233654A1
- Authority
- DE
- Germany
- Prior art keywords
- dissolved
- thermally decomposable
- compounds
- resinate
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
- H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
- H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
- H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
- H01C17/0654—Oxides of the platinum group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
- H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
- H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
- H01C17/06526—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/20—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by pyrolytic processes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Electronic Switches (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Adjustable Resistors (AREA)
Description
DEUTSCHE GOLD- UND SILBER-SCHEIDEANSTALT VOIiMALS IIOESSLER Frankfurt/Main, Weißfrauenstrasse 9GERMAN GOLD AND SILVER SCHEIDEANSTALT VOIiMALS IIOESSLER Frankfurt / Main, Weißfrauenstrasse 9
22335542233554
Thermisch zersetzbare Masse zur Herstellung von elektrischenThermally decomposable mass for the production of electrical
Widerständen.Resistances.
Gegenstand der Erfindung ist- eine thermisch zersetzbare Masse zur Herstellung von elektrischen Widerständen,The subject of the invention is a thermally decomposable mass for the production of electrical resistors,
Es ist bekannt, dass elektrische Widerstände durch Aufbringen von edelmetallhaltigen Überzügen auf nichtleitendes Trägermaterial, vorzugsweise Oxidkeramik, - z.B. durch Tauchen, Aufsprühen, Aufdampfen und Siebdrucken mit ansohliessendem Glühen hergestellt werden,It is known that electrical resistances are caused by the application of coatings containing precious metals to non-conductive carrier material, preferably oxide ceramics - e.g. produced by dipping, spraying, vapor deposition and screen printing with annealing subsequently will,
Weiter ist bekannt, dass edelmetallhaltige Schichtwiderstände iii der Weise hergestellt werden können, dass auf dem nichtleitenden Trägermaterial eine Lösung einer Edelmetallverbindung aufgebracht und zur Bildung der Edelmetallschicht bei erhöhter Temperatur zersetzt wird. Die aufgebrachte und eingebrannte dünne Metallschicht aus z.B. Gold, Iridium, Platin, Palladium, Ruthenium, lihodium oder Gemischen aus diesen bildet die Widerstandsschicht.It is also known that precious metal-containing sheet resistors iii can be produced in such a way that on the non-conductive Carrier material is a solution of a noble metal compound is applied and decomposed at an elevated temperature to form the noble metal layer. The applied and branded forms a thin metal layer from e.g. gold, iridium, platinum, palladium, ruthenium, lihodium or mixtures of these the resistive layer.
Die auf diese Weise aufgebrachten dünnen Widerstandsschichten zeigen nur geringe Haftfestigkeit und Abriebfestigkeit. Zur Verbesserung dieser Eigenschaften ist es deshalb gebräuchlich, den Massen zur Bildung bindender Glasur- und/oder Emailleanteile in der Widerstandsschicht Glaspulver beizufügen.The thin resistive layers applied in this way show only low adhesive strength and abrasion resistance. To the It is therefore customary to improve these properties in the masses to form binding glaze and / or enamel parts add glass powder in the resistance layer.
Um eine gleiehmässige, die elektrischen Eigenschaften der Widerstandssohicht positiv beeinflussende Verteilung der Edel-In order to achieve a uniform, the electrical properties of the resistance layer positively influencing distribution of noble
309884/Θ898 . ■ ' ·309884 / Θ898. ■ '·
meta11verbindung zu erreichen, werden bekanntermassen Glaspulver-Partikeln mit einer thermisch zersetzbaren Lösung organischer Edelmetallverbindungen gleichmässig benetzt.It is known that glass powder particles are used to achieve meta11 connection evenly wetted with a thermally decomposable solution of organic noble metal compounds.
Bekannt sind für diese Zwecke z.B. Lösungen von Edelmetall-Resinaten, -Carboxylaten, -Naphthenaten, -Mercaptiden u.a. auf Basis von Gold, Iridium, Platin, Palladium, Kuthenium, Khodium öder deren Gemischen in z.B. Alkoholen, chlorierten Kohlenwasserstoffen, Äther, Cyclohexanol, Terpenen, Cineol, Lavendelöl, u.a. (US-Patentschrift 2 693 023, britische Patentschrift 1 195 «33)♦Solutions of precious metal resinates, for example, are known for these purposes, Carboxylates, naphthenates, mercaptides and others Based on gold, iridium, platinum, palladium, kuthenium, khodium or their mixtures in e.g. alcohols, chlorinated hydrocarbons, Ether, cyclohexanol, terpenes, cineole, lavender oil, etc. (US Patent 2,693,023, British Patent 1,195,33) ♦
Die Aufbringung dieser Verbindungen auf Träger erfolgt z.B. in Form von Pasten, die durch Zufügen von Bindemitteln aus Lackharzen - in Ketonen, Pineölen, Fettalkoholen und dgl. gelöst zu den beschriebenen Edelmetallverbindungen hergestellt werden.These compounds are applied to the carrier, for example in the form of pastes, which are made from paint resins by adding binders - Dissolved in ketones, pine oils, fatty alcohols and the like. Produced to give the noble metal compounds described.
Die Herstellung eines Widerstandes auf dem isolierenden Trägerkörper mit den beschriebenen Widerstandspasten erfolgt im allgemeinen nach den bekannten Verfahren z.B. durch Siebdrucken, Trocknen und Erhitzen unterhalb des Schmelzbereichs des Glases zur Austreibung der organischen und anorganischen Komponenten der Edelmetallverbindung und der Lösung und zur Zersetzung der Edelmetallverbindung und abschliessendes Brennen bei Temperaturen oberhalb des Schmelzbereichs des Glases zur haftfesten Verbindung mit dem Trägermaterial (US-Patentschrift 3 149 002, deutsche Patentschrift 1 I32 633).The production of a resistor on the insulating support body with the resistor pastes described is generally carried out according to the known processes, e.g. by screen printing, Drying and heating below the melting range of the glass to drive off the organic and inorganic components the noble metal compound and the solution and for the decomposition of the noble metal compound and subsequent firing at temperatures above the melting range of the glass for a firm connection with the carrier material (US Pat. No. 3,149,002, German patent specification 1 I32 633).
Die Temperaturkoeffizienten des elektrischen Widerstandes, welche mit den beschriebenen bekannten organischen Edelmetallverbindungen enthaltenden Widerstandspasten erzielt werden können, sind technisch nicht befriedigend. Es ist mit diesen Pasten bisher nicht möglich, im gesamten Widerstandsbereich Temperaturkoeffizienten kleiner als ί 200 ppm/°C mit SicherheitThe temperature coefficient of the electrical resistance, which with the described known organic noble metal compounds Resistance pastes containing can be achieved are technically unsatisfactory. It is with these Pastes not yet possible, temperature coefficients less than ί 200 ppm / ° C with certainty in the entire resistance range
_ 3 3Q9884/G8G3 _ 3 3Q9884 / G8G3
und reproduzierbar herzustellen. Insbesondere weisen nieder- und hochohmige Widerstände erheblich ungünstigere und stark streuende Werte, im Extremfall bis'mehrere Tausend ppm, auf. (Britische Patentschrift 1 195 «33).and to manufacture reproducibly. In particular, low- and high-resistance resistances are considerably less favorable and strong scattering values, in extreme cases up to several thousand ppm. (British patent 1 195 333).
Gefordert wird von derartigen Pasten, dass das Pastensystem eine möglichst grosse Variationsbreite des elektrischen Widerstandes ermöglicht und gleichzeitig der Temperaturkoeffizient des Widerstandes in allen Widerstandsbereichen möglichst klein ist.A requirement of such pastes is that the paste system has the greatest possible variation in electrical resistance and at the same time the temperature coefficient of the Resistance is as small as possible in all resistance ranges.
Es wurde nun gefunden, dass es mit Hilfe nur geringer Zusätze löslicher organischer Unedelmetallverbindungen möglich ist, den Temperaturkoeffizienten iia Sinne der obigen von der Technik gestellten Anforderungen zu verbessern.It has now been found that it is possible with the help of only small additions of soluble organic base metal compounds to improve the temperature coefficient in the sense of the above requirements imposed by technology.
Erfindungsgemäss enthalten die Massen, die zur Herstellung von elektrischen Widerständen verwendet werden, neben organischen Gold- und/oder Platin-, Palladium-, Iridium-, Rhodium-,Ruthenium-Verbindungen organische Verbindungen von Unedelmetallen.According to the invention contain the masses that are used for the production of electrical resistors are used, in addition to organic gold and / or platinum, palladium, iridium, rhodium, ruthenium compounds organic compounds of base metals.
Als Edelmetallkomponente können Gold, Iridium, Platin, Palladium, Ruthenium oder Gemische aus diesen in.Form metallorganischer Verbindungen eingesetzt werden, während als Unedelmetall Organo-Unedelraetall-Verbindungen solche der Elemente Bi, Si, B, Cu, Pe, Ti, Al, Cr, Ni, Pb, Mn, Co verwendet worden. Als Organo-Metall-Verbindungen der Unedelmetalle werden - ähnlich wie bei den Edelmetallen - ilesinate, Carboxylate, Naphteriate, Mercaptide u.a. verwendet.As noble metal components, gold, iridium, platinum, palladium, ruthenium or mixtures of these in .Form organometallic Compounds are used while as base metal are organo-base metal compounds those of the elements Bi, Si, B, Cu, Pe, Ti, Al, Cr, Ni, Pb, Mn, Co have been used. As organo-metal compounds of the base metals - similar to the noble metals - ilesinates, carboxylates, naphterates, mercaptides used among others.
Als organische Bindemittel werden synthetische oder natürliche Lackharze, die leicht und rüekstandsfrei einbrennen, eingesetzt. Bevorzugt werden Alkydharze, Äthylcellulose, Asphalt, Kolophonium, verwendet.Synthetic or natural varnish resins, which burn in easily and without residue, are used as organic binders. Alkyd resins, ethyl cellulose, asphalt, rosin, used.
- k 309884/0809 - k 309884/0809
Die Anwendung der erfindungsgemässen Masse erfolgt mit an sich bekannten Methoden. Im allgemeinen werden sie im Siebdruckverfahren auf feuerfeste Träger aufgebracht und bei Temperaturen zwischen 700 und 95O0C eingebrannt.The composition according to the invention is used using methods known per se. They are generally applied by screen printing on a heat resistant substrate and stoved at temperatures between 700 and 95O 0 C.
Wie anhand der folgenden Beispiele gezeigt wird, ist es mit den Pasten gemäss Erfindung durch die verhältnisniässig geringen Zusätze organischer Unedelmetallverbindungen möglich, den Temperaturkoeffizienten der eingebrannten Widerstände in gewissem Umfang gezielt zu beeinflussen. Der Vorteil der erfindungsgemässen Pasten liegt unter anderem darin, dass sie einen homogenen Ausbrand über die gesamte Widerstandsbahn ermöglichen und dass über einen grossen Widerstandsbereich Widerstände mit kleinen Temperaturkoeffizienten mit einer Nullabweichung von weniger als 200 ppm/ C absolut, eingestellt werden können.As shown in the following examples, the Pastes according to the invention due to the relatively low Additions of organic base metal compounds are possible, the temperature coefficient of the burned-in resistors to a certain extent To influence the scope in a targeted manner. The advantage of the invention Pastes are, among other things, that they enable a homogeneous burnout over the entire resistance track and that over a large resistance range, resistors with small temperature coefficients with a zero deviation of less than 200 ppm / C absolute.
Der Zusatz von Glas kann teilweise in Form von Organo-Metall-Verbindungen, insbesondere von Si, Pb, B, Al, Bi erfolgen,, die beim Einbrennen ein Gemisch glasbildender Oxide ergeben.The addition of glass can partly take the form of organometallic compounds, in particular of Si, Pb, B, Al, Bi, which result in a mixture of glass-forming oxides when stoved.
In den Beispielen bedeutet TK den Wert des Temperaturkoeffizienten des fertigen Widerstandes, H„ den Flächenwiderstand.In the examples, T K denotes the value of the temperature coefficient of the finished resistor, H "denotes the sheet resistance.
Die Beispiele 1 bis 3 zeigen die Abhängigkeit des T^-Wertes bei Au-Ir-ilesinat-Widerstandspasten vom Gehalt an Cu in der eingebrannten Viderstandsschicht.Examples 1 to 3 show the dependence of the T ^ value in Au-Ir-ilesinate resistor pastes from the content of Cu in the baked Resistance layer.
GrammGram
Au-itesinat, gelöst in Terpineol (32#ig) 15 (,Au-itesinat, dissolved in terpineol (32 # ig) 15 (,
Glaspulver 'Glass powder '
Asphalt, gelöst in Pineöl (5OJUg) 29 \ Dibutylphthalat · 'Asphalt, dissolved in pine oil (5OJUg) 29 \ dibutyl phthalate · '
309884/0809 1ϋ0·υ _309884/0809 1ϋ0 · υ _
GrammGram
Brenntemperatur* 850° 2233654Firing temperature * 850 ° 2233654
HF = 35H F = 35
T = 500 ppm/ GT = 500 ppm / G
Au-Hesinat, gelöst in Terpineol (32 %ig) 15jt> Ir-Resinat, » " ■ " (b,9 %ig) 7,ö Cu-Na p^thena t, gelöst in Pine öl (I3 %ig) i, b Glaspulver 35,0Au hesinate, dissolved in terpineol (32%) 15% Ir resinate, »" ■ "(b, 9%) 7, ö Cu-Na p ^ thena t, dissolved in pine oil (I3%) i, b Glass powder 35.0
(50 $ig) 28/5 11.3 100.0(50 $ ig) 28/5 11.3 100.0
DibutylphthalatAsphalt, solved
Dibutyl phthalate
Hp = 25 K*Q.Firing temperature
Hp = 25 K * Q.
Au-Hesinat, gelöst in Terpineol (32 foig) 15.6Au hesinate, dissolved in terpineol (32 foig) 15.6
ir-Eesinat, " » " (8,9 folg) 7,8ir-Eesinat, "» "(8.9 follow) 7.8
Cu-Naphthenat, gelöst in Pineöl (I3 folg) 5.6 Cu naphthenate, dissolved in pine oil (I3 follow) 5.6
Glaspulver 35.0Glass powder 35.0
Asphalt, gelöst in Pineöl (50 %ig) 27.5Asphalt dissolved in pine oil (50%) 27.5
Dibutylphthalat 10.5 Dibutyl phthalate 10.5
100.0 Brenntemperatur 050100.0 firing temperature 050
Rp = 30 k Jl
TK = 50 ppm/°CR p = 30 k Jl
T K = 50 ppm / ° C
Die Beispiele k bis 11 zeigen Widerstandspasten mit Flächenwiderständen zwischen 50 Jl und 1,1 MJl mit den dazugehörigen Tj£ m Werten.Examples k to 11 show resistor pastes with sheet resistances between 50 Jl and 1.1 MJl with the associated Tj £ m values.
- 6 309884/0809 - 6 309884/0809
Au-Resinat, gelöst in Terpineol (32 %ig) Au resinate, dissolved in terpineol (32 %)
Ir-Resinat, " " " (b,9 %igIr resinate, "" "(b, 9% ig
Ti-Butyltiianat, gelöst in Pineöl(5 $ig)Ti-Butyltiianat, dissolved in pine oil (5 $ ig)
GlaspulverGlass powder
Asphalt, gelöst in Pineöl (50 %ig)Asphalt, dissolved in pine oil (50%)
Kolophonium,gelöst in Terpineol (60 c/olg) Rosin, dissolved in terpineol (60 c / olg)
LavendelölLavender oil
Brenntemperatur b50Firing temperature b50
Rp = 50 Xl R p = 50 Xl
GrammGram
21.921.9
1.21.2
1.0 10.0 35.0 21.01.0 10.0 35.0 21.0
100.0100.0
= 110 ppm/°C= 110 ppm / ° C
Au-Resinat, gelöst in Dibutylphthalat (325»)Au resinate, dissolved in dibutyl phthalate (325 »)
Pt-flesinat, gelöst in TerpineolPt flesinate dissolved in terpineol
Ir-Resinat, gelöst in TerpineolIr resinate dissolved in terpineol
Cu-Naphthenat, gelöst in PineölCu naphthenate dissolved in pine oil
GlaspulverGlass powder
Kolophonium in TerpineolRosin in terpineol
Asphalt in Dibutylphthalat ,.Asphalt in dibutyl phthalate,.
PineölPine oil
Brenntemperatur b50Firing temperature b50
aF = 5 κa F = 5 κ
TK =130 ppm/0CT K = 130 ppm / 0 C
100.0100.0
309884/0809309884/0809
Au-Resinat, gelöst in Dibutylphthalat Ir-Resinat, gelöst in Terpineol
Ru-Resinat, gelöst in Lavendelöl Fe-Benzoat, gelöst in Pineöl
Cu-Naphthenat, gelöst " Glaspulver
Asphalt in Pineöl
DibutylphthalatAu resinate, dissolved in dibutyl phthalate Ir resinate, dissolved in terpineol Ru resinate, dissolved in lavender oil Fe benzoate, dissolved in pine oil Cu naphthenate, dissolved "Glass powder
Asphalt in pine oil
Dibutyl phthalate
100.0 Brenntemperatur b50° " *100.0 firing temperature b50 ° "*
K
Beispiel 7: K
Example 7:
Τ«· = 60 ppm/0CΤ «· = 60 ppm / 0 C
Au-Resinat, gelöst in Terpineol Ir-Resinat " " Cu-Naphthenat, gelöst in Pineöl GlaspulverAu resinate, dissolved in Terpineol Ir resinate "" Cu naphthenate, dissolved in pine oil, glass powder
Asphalt, gelöst in Dthutylphthalat PineölAsphalt dissolved in thutyl phthalate pine oil
DibutylphthalatDibutyl phthalate
100.0100.0
Brenntemperatur 850°Firing temperature 850 °
H„ = 240 KH "= 240 K
Tk = O ppm/°c T k = 0 ppm / ° C
30988A/080930988A / 0809
Beispiel 8; · Gramm Example 8; · Grams
Au-Resina't, gelöst in Terpineol (32 %') 6.3Au-Resina't, dissolved in terpineol (32 % ') 6.3
Ir-flesinat " " " (b.9# ) 5.1Ir-flesinate "" "(b.9 #) 5.1
Cu-Naphtheriat, gelöst in Pineöl (13.0%) 1.5 Si-Kieselsäureester,gelöst in CyclohexanonCu naphthalene dissolved in pine oil (13.0%) 1.5 Si silicic acid ester, dissolved in cyclohexanone
(20 ljo ) 30.Ü(20 l jo ) 30th
Glaspulver 30.0Glass powder 30.0
Asphalt in Dibutylphthalat " (50 %) 20.0Asphalt in Dibutyl Phthalate "(50 %) 20.0
Terpineol " 7.1 Terpineol " 7.1
100.0100.0
Brenntemperatur b50°
flp = 1.1 MFiring temperature b50 °
fl p = 1.1 M
TK = 120 ppm/°CT K = 120 ppm / ° C
Au-Resinat, gelöst in Terpineol (32 %ig) 15?6 Ir-Resinat, " " " (b.9fo±g) 7.ti Cu-Naphthenat " " " (b.Oc/oig) 5.0 Si-Kieselsäureester, gelöst in Cyclohexanon,Au resinate, dissolved in terpineol (32%) 15? 6 Ir resinate, """ (b.9f o ± g) 7.ti Cu naphthenate""" (bO c / o ig) 5.0 Si silicic acid ester , dissolved in cyclohexanone,
(20 %±g) 25.0(20 % ± g) 25.0
Glaspulver 35.0Glass powder 35.0
Asphalt, gelöst in Pineöl (50 %ig) 10.0Asphalt dissolved in pine oil (50%) 10.0
Dibutylphthalat IJ^ Dibutyl phthalate IJ ^
100.0100.0
Brenntemperatur °
Rp = 47 K J2.
TK = 130 ppm/0CFiring temperature °
Rp = 47 K J2.
T K = 130 ppm / 0 C
309804/0309309804/0309
Au-Resinat, gelöst in TerpineolAu resinate dissolved in terpineol
Ir-Resinat, " " "Ir resinate, "" "
Bi-Resinat, Gelöst in PineölBi-resinate, dissolved in pine oil
GlaspulverGlass powder
Asphalt, gelöst in Dibutylphthalat(50$iAsphalt dissolved in dibutyl phthalate ($ 50 i
CyclohexanonCyclohexanone
100.0100.0
BrenntemperaturFiring temperature
= 19 K= 19 K
= IbO ppm/°C= IbO ppm / ° C
Au-Hesinat, gelöst in Dibutylphthalat (32 %) 15.6Au hesinate, dissolved in dibutyl phthalate (32 %) 15.6
Ir-Resinat, gelöst in Terpineol . (ö.9%) 7.ÖIr resinate dissolved in terpineol. (Austrian 9%) 7th Austrian
Ni-Resinat, gelöst in Pineöl (2.5%) 4.0Ni resinate, dissolved in pine oil (2.5%) 4.0
Glaspulver 10.0Glass powder 10.0
Asphalt, gelöst in Pineöl (50 %) 50.0Asphalt dissolved in pine oil (50 %) 50.0
Lavendelöl 12.6Lavender oil 12.6
Brenntemperatur b50Firing temperature b50
Rp = ti K XL· TK = 90 ppm/°CR p = ti K XL * T K = 90 ppm / ° C
100.00 ο100.00 ο
In Betracht gezogene Druckschriften:Considered publications:
Deutsche Patentschrift Nr. 932 US-Patentschrift Nr. 61? 375German patent specification No. 932 U.S. Patent No. 61? 375
Deutsche Auslegeschriften Nr. 1 006 492; 1 421 865; 1 446 145German Auslegeschriften No. 1 006 492; 1,421,865; 1 446 145
Deutsche Offenlegungsschrift Nr. 1 665German Offenlegungsschrift No. 1 665
- 10 -- 10 -
309884/08Θ9309884 / 08Θ9
Claims (7)
Schn/P7th July 1972
Schn / P
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19722233654 DE2233654A1 (en) | 1972-07-08 | 1972-07-08 | THERMAL DECOMPOSABLE MATERIAL FOR THE PRODUCTION OF ELECTRICAL RESISTORS |
CH991373A CH589011A5 (en) | 1972-07-08 | 1973-07-06 | |
IT6902073A IT991683B (en) | 1972-07-08 | 1973-07-06 | THERMICALLY DECOMPOSABLE MASS FOR THE MANUFACTURE OF ELECTRIC RESISTANCES |
NL7309499A NL7309499A (en) | 1972-07-08 | 1973-07-06 | |
JP48077394A JPS5030094A (en) | 1972-07-08 | 1973-07-09 | |
FR7325071A FR2192361A1 (en) | 1972-07-08 | 1973-07-09 | Electrical resistors mfr - by thermally decomposing org cpds of noble and non noble metals |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19722233654 DE2233654A1 (en) | 1972-07-08 | 1972-07-08 | THERMAL DECOMPOSABLE MATERIAL FOR THE PRODUCTION OF ELECTRICAL RESISTORS |
Publications (1)
Publication Number | Publication Date |
---|---|
DE2233654A1 true DE2233654A1 (en) | 1974-01-24 |
Family
ID=5850094
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19722233654 Pending DE2233654A1 (en) | 1972-07-08 | 1972-07-08 | THERMAL DECOMPOSABLE MATERIAL FOR THE PRODUCTION OF ELECTRICAL RESISTORS |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5030094A (en) |
CH (1) | CH589011A5 (en) |
DE (1) | DE2233654A1 (en) |
FR (1) | FR2192361A1 (en) |
IT (1) | IT991683B (en) |
NL (1) | NL7309499A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4425815C1 (en) * | 1994-07-21 | 1995-08-17 | Demetron Gmbh | Precious metal-contg. resinate paste |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU529792B2 (en) * | 1980-07-09 | 1983-06-23 | Matsushita Electric Industrial Co., Ltd. | Infrared radiative body |
US4547313A (en) * | 1983-04-18 | 1985-10-15 | Phillips Petroleum Company | Conductive polymer composition |
JPS60102701A (en) * | 1983-11-10 | 1985-06-06 | アルプス電気株式会社 | Thick film resistance layer forming paste |
JPH0689226B2 (en) * | 1986-05-14 | 1994-11-09 | 東レ株式会社 | Polybutylene terephthalate resin composition |
JP2699381B2 (en) * | 1987-04-28 | 1998-01-19 | 富士ゼロックス株式会社 | Manufacturing method of resistor |
JP2615633B2 (en) * | 1987-07-14 | 1997-06-04 | 富士ゼロックス株式会社 | Manufacturing method of thermal head |
JP2617110B2 (en) * | 1988-02-29 | 1997-06-04 | 富士ゼロックス株式会社 | Manufacturing method of resistor |
JPH07105282B2 (en) * | 1988-05-13 | 1995-11-13 | 富士ゼロックス株式会社 | Resistor and method of manufacturing resistor |
JPH01313578A (en) * | 1988-06-13 | 1989-12-19 | Tanaka Kikinzoku Kogyo Kk | Organoiridium ink |
JPH0229477A (en) * | 1988-07-19 | 1990-01-31 | Tanaka Kikinzoku Kogyo Kk | Organoruthenium ink |
JPH0782921B2 (en) * | 1988-07-22 | 1995-09-06 | 松下電器産業株式会社 | Method of manufacturing thermal head |
JPH0758642B2 (en) * | 1988-12-16 | 1995-06-21 | 松下電器産業株式会社 | Thermal head |
JP2605875B2 (en) * | 1989-07-10 | 1997-04-30 | 富士ゼロックス株式会社 | Resistor film and method of forming the same |
JPH03136213A (en) * | 1989-10-20 | 1991-06-11 | Matsushita Electric Ind Co Ltd | Coating material for resistor |
US5510823A (en) * | 1991-03-07 | 1996-04-23 | Fuji Xerox Co., Ltd. | Paste for resistive element film |
JPH0770368B2 (en) * | 1991-03-07 | 1995-07-31 | 富士ゼロックス株式会社 | Resistor film paste |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3149002A (en) * | 1957-03-18 | 1964-09-15 | Beckman Instruments Inc | Method of making electrical resistance element |
US3271193A (en) * | 1962-09-20 | 1966-09-06 | Cts Corp | Electrical resistance element and method of making the same |
US3639274A (en) * | 1967-09-06 | 1972-02-01 | Allen Bradley Co | Electrical resistance composition |
US3619287A (en) * | 1968-09-20 | 1971-11-09 | Carrier Corp | Process of producing an electrical resistor |
-
1972
- 1972-07-08 DE DE19722233654 patent/DE2233654A1/en active Pending
-
1973
- 1973-07-06 IT IT6902073A patent/IT991683B/en active
- 1973-07-06 NL NL7309499A patent/NL7309499A/xx unknown
- 1973-07-06 CH CH991373A patent/CH589011A5/xx not_active IP Right Cessation
- 1973-07-09 FR FR7325071A patent/FR2192361A1/en active Granted
- 1973-07-09 JP JP48077394A patent/JPS5030094A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4425815C1 (en) * | 1994-07-21 | 1995-08-17 | Demetron Gmbh | Precious metal-contg. resinate paste |
Also Published As
Publication number | Publication date |
---|---|
IT991683B (en) | 1975-08-30 |
JPS5030094A (en) | 1975-03-26 |
FR2192361A1 (en) | 1974-02-08 |
NL7309499A (en) | 1974-01-10 |
FR2192361B3 (en) | 1976-06-25 |
CH589011A5 (en) | 1977-06-30 |
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