DE1255199B - Electroluminescent fluorescent body - Google Patents
Electroluminescent fluorescent bodyInfo
- Publication number
- DE1255199B DE1255199B DE1964S0093613 DES0093613A DE1255199B DE 1255199 B DE1255199 B DE 1255199B DE 1964S0093613 DE1964S0093613 DE 1964S0093613 DE S0093613 A DES0093613 A DE S0093613A DE 1255199 B DE1255199 B DE 1255199B
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- arsenide
- antimonide
- semiconductor body
- inclusions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 47
- 239000003990 capacitor Substances 0.000 claims description 15
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 10
- 230000005670 electromagnetic radiation Effects 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 6
- 230000005684 electric field Effects 0.000 claims description 5
- 238000005401 electroluminescence Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 230000003595 spectral effect Effects 0.000 claims description 5
- 230000000903 blocking effect Effects 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 7
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 3
- 150000001875 compounds Chemical class 0.000 claims 3
- 229910052733 gallium Inorganic materials 0.000 claims 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 3
- 230000005855 radiation Effects 0.000 claims 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 2
- 229910000673 Indium arsenide Inorganic materials 0.000 claims 2
- NMLUQMQPJQWTFK-UHFFFAOYSA-N arsanylidynecobalt Chemical compound [As]#[Co] NMLUQMQPJQWTFK-UHFFFAOYSA-N 0.000 claims 2
- 239000002800 charge carrier Substances 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 239000011651 chromium Substances 0.000 claims 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 239000002244 precipitate Substances 0.000 claims 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- 229910005540 GaP Inorganic materials 0.000 claims 1
- 239000005083 Zinc sulfide Substances 0.000 claims 1
- ZTNAMCOKKZMLMJ-UHFFFAOYSA-N [Cr].[Cr].[As] Chemical compound [Cr].[Cr].[As] ZTNAMCOKKZMLMJ-UHFFFAOYSA-N 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 claims 1
- 229910002056 binary alloy Inorganic materials 0.000 claims 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 claims 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 claims 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 229910052748 manganese Inorganic materials 0.000 claims 1
- 239000011572 manganese Substances 0.000 claims 1
- 239000000155 melt Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 238000005215 recombination Methods 0.000 claims 1
- 230000006798 recombination Effects 0.000 claims 1
- 238000007711 solidification Methods 0.000 claims 1
- 230000008023 solidification Effects 0.000 claims 1
- 229910052984 zinc sulfide Inorganic materials 0.000 claims 1
- 238000004857 zone melting Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000005610 quantum mechanics Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Electroluminescent Light Sources (AREA)
- Electrodes Of Semiconductors (AREA)
Description
DEUTSCHES WfTWl· PATENTAMTGERMAN WfTWl PATENT OFFICE
Deutsche Kl.: 21 f - 89/03 German class: 21 f - 89/03
AUSLEGESCHRIFT —EDITORIAL -
Aktenzeichen: S 93613 VIII c/21 fFile number: S 93613 VIII c / 21 f
1 255 199 Anmeldetag: 3. Oktober 19641 255 199 filing date: October 3, 1964
Auslegetag: 30. November 1967Open date: November 30, 1967
Die Erfindung betrifft eine Anordnung zur Erzeugung elektromagnetischer Strahlung im infraroten und sichtbaren Spektralbereich. Dabei wird von der Elektrolumineszenz Gebrauch gemacht.The invention relates to an arrangement for generating electromagnetic radiation in the infrared and visible spectral range. Use is made of electroluminescence.
Die Elektrolumineszenz der Halbleiter, im wesentlichen Zinkoxid- und Zinksulfid-Verbindungen, ist bereits bekannt (s. Zeitschrift für Naturforschung, Bd. 8 a, 1953, S. 756/757, und Physical Review, Bd. 87, 1. Juli 1952, S. 151/152). Zur Erzeugung der Elektrolumineszenz wurde dabei die Austrittsarbeit Metallelektrode—Halbleiter ausgenutzt. In bekannten Fällen wurde der Halbleiterkörper, der aus Kristalliten oder Sinterschichten besteht, auf der einen Seite von einer punktförmigen und auf der anderen Seite von einer ebenen Metallelektrode berührt. Wegen der relativ wenigen Berührungsstellen war der Wirkungsgrad den Anordnungen relativ gering.The electroluminescence of semiconductors, essentially zinc oxide and zinc sulfide compounds, is already known (see Zeitschrift für Naturforschung, Vol. 8 a, 1953, pp. 756/757, and Physical Review, Vol. 87, July 1, 1952, pp. 151/152). The work function was used to generate the electroluminescence Metal electrode — semiconductor exploited. In known cases, the semiconductor body was made up of crystallites or sintered layers consists, on one side from a point-shaped and on the other side touched by a flat metal electrode. Because of the relatively few points of contact, the efficiency was the arrangements relatively low.
Es ist daher auch schon ein Leuchtkondensator bekanntgeworden (s. deutsche Auslegeschrift 1020 115), zwischen dessen Elektroden sich ein zur Lichtaussendung anregbarer Leuchtstoff befindet und wobei eine der Kondensatorelektroden in Richtung des elektrischen Feldes mit spitzen Fortsätzen versehen ist. Der Leuchtstoff besteht dabei aus einem Dielektrikum, in das halbleitende Leuchtstoffteilchen eingebettet sind. Der Leuchtstoffkörper ist hier kein Halbleiterkristall an sich, da man der Meinung war, Halbleitermaterial setze die Durchschlagfestigkeit zu sehr herab.A luminous capacitor has therefore already become known (see German interpretation document 1020 115), between the electrodes of which there is a fluorescent substance that can be stimulated to emit light and one of the capacitor electrodes being provided with pointed extensions in the direction of the electric field is. The phosphor consists of a dielectric in which the semiconducting phosphor particles are embedded. The fluorescent body is not a semiconductor crystal per se, as it was believed Semiconductor material reduces the dielectric strength too much.
Der Leuchtkondensator ist auch nur relativ schwierig und aufwendig herstellbar, da bei der Ausbildung nach der Auslegeschrift die scharfkantigen spitzen Fortsätze genau gleich lang sein sollen. Schließlich konnten die Fortsätze nur mechanisch und daher nur relativ wenig dicht gesetzt werden, so daß auch hier der Wirkungsgrad entsprechend gering war.The luminous capacitor is also relatively difficult and expensive to manufacture, since it is designed According to the interpretation, the sharp-edged pointed extensions should be exactly the same length. After all, the extensions could only be set mechanically and therefore only relatively slightly sealed, see above that here too the efficiency was correspondingly low.
Der Erfindung liegt die Aufgabe zugrunde, einen elektrolumineszenten Leuchtstoffkörper zu schaffen, bei dem einerseits wesentlich mehr Berührungsstellen zwischen Leuchtstoff und Metall vorhanden sind und bei dem andererseits von Halbleitern Gebrauch gemacht wird.The invention is based on the object of creating an electroluminescent phosphor body, in which on the one hand there are significantly more points of contact between phosphor and metal and which, on the other hand, makes use of semiconductors.
Die Erfindung bezieht sich auf einen elektrolumineszenten Leuchtstoffkörper, der zwischen den Platten eines Kondensators angeordnet ist und der von in Feldrichtung ausgerichteten Nadelspitzen durchsetzt ist, zur Erzeugung elektromagnetischer Strahlung im infraroten und sichtbaren Spektralbereich. Die erfindungsgemäße Lösung der Aufgabe besteht darin, daß der Leuchtstoffkörper ein zweiphasig aufgebauter Halbleiterkristall ist, in dessen ElektroIumineszenter LeuchtstoffkörperThe invention relates to an electroluminescent phosphor body between the Plates of a capacitor is arranged and the needle tips aligned in the field direction is interspersed, for generating electromagnetic radiation in the infrared and visible spectral range. The inventive solution to the problem is that the phosphor body has a two-phase built-up semiconductor crystal is, in its electro-luminescent phosphor body
Anmelder:Applicant:
Siemens Aktiengesellschaft,
Berlin und München,
Erlangen, Werner-von-Siemens-Str. 50Siemens Aktiengesellschaft,
Berlin and Munich,
Erlangen, Werner-von-Siemens-Str. 50
Als Erfinder benannt:Named as inventor:
Dipl.-Phys. Dr. Herbert Weiß, NürnbergDipl.-Phys. Dr. Herbert Weiß, Nuremberg
halbleitende Phase nadelartig langgestreckte, spitze Einschlüsse eingebettet sind, die einer zweiten, elektrisch
besser leitenden Phase zugehören, die mit der ao halbleitenden Phase einen sperrenden Kontakt bilden
und die parallel zueinander sowie im wesentlichen senkrecht zu den Oberflächen der Kondensatorplatten
ausgerichtet sind.
Der den erfindungsgemäßen Leuchtstoffkörper bildende zweiphasig aufgebaute Halbleiterkörper ist an
sich bekannt und in der Zeitschrift für Physik. Bd. 176, Nr. 4, 1963, S. 399 bis 408, beschrieben.semiconducting phase needle-like elongated, pointed inclusions are embedded which belong to a second, electrically better conductive phase, which form a blocking contact with the ao semiconducting phase and which are aligned parallel to one another and essentially perpendicular to the surfaces of the capacitor plates.
The two-phase semiconductor body which forms the phosphor body according to the invention is known per se and is published in the Zeitschrift für Physik. Vol. 176, No. 4, 1963, pp. 399 to 408.
Unter einem hochohmigen Halbleiterkörper ist ein eigenleitender oder schwach dotierter Halbleiterkörper zu verstehen. Die elektrische Leitfähigkeit der Einschlüsse aus gut leitendem Material ist groß gegenüber der elektrischen Leitfähigkeit des Halbleiterkörpers. Under a high-resistance semiconductor body is an intrinsically conductive or weakly doped semiconductor body to understand. The electrical conductivity of the inclusions made of highly conductive material is high compared to the electrical conductivity of the semiconductor body.
Die Wirkungsweise und der Aufbau der erfindungsgemäßen Anordnung soll an Hand zweier Figuren näher beschrieben werden.The mode of operation and the structure of the arrangement according to the invention are illustrated in two figures are described in more detail.
Fig. 1 zeigt schematisch eine Anordnung gemäß der Erfindung;Fig. 1 shows schematically an arrangement according to the invention;
Fig. 2 zeigt schematisch eine spezielle Ausführungsform einer Anordnung gemäß der Erfindung.
In F i g. 1 ist ein hochohmiger Halbleiterkörper 1 zwischen den Platten 2 und 3 eines Kondensators angeordnet.
Im Halbleiterkörper! befinden sich langgestreckte, spitze, elektrisch gut leitende, beispielsweise
metallische Einschlüsse. In der Figur sind zwei dieser Einschlüsse dargestellt und mit 4 bezeichnet.
Legt man an die Kondensatorplatten eine elektrische Spannung, beispielsweise von einigen Volt, so bildet
sich zwischen den Platten ein elektrisches Feld aus. An den Spitzen der Einschlüsse ist dieses elektrische
Feld besonders hoch. Daher werden an den Spitzen dieser Einschlüsse, auf Grund des quantenmecha-Fig. 2 shows schematically a special embodiment of an arrangement according to the invention.
In Fig. 1, a high-resistance semiconductor body 1 is arranged between the plates 2 and 3 of a capacitor. In the semiconductor body! there are elongated, pointed, electrically conductive, for example metallic inclusions. In the figure, two of these inclusions are shown and denoted by 4. If an electrical voltage, for example of a few volts, is applied to the capacitor plates, an electrical field is formed between the plates. This electric field is particularly high at the tips of the inclusions. Therefore, at the tips of these inclusions, due to the quantum mechanics
709 690/184709 690/184
Claims (8)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1964S0093613 DE1255199B (en) | 1964-10-03 | 1964-10-03 | Electroluminescent fluorescent body |
DE19641439455 DE1439455A1 (en) | 1964-10-03 | 1964-10-03 | Semiconductor component with blocking multiple tip contact |
BE669846D BE669846A (en) | 1964-10-03 | 1965-09-20 | |
CH1316865A CH438488A (en) | 1964-10-03 | 1965-09-23 | Arrangement for generating electromagnetic radiation in the infrared and visible spectral range |
NL6512617A NL6512617A (en) | 1964-10-03 | 1965-09-29 | |
GB4207565A GB1119215A (en) | 1964-10-03 | 1965-10-04 | Semiconductor arrangements for generating electromagnetic radiation in the range consisting of the infra-red and visible spectral ranges |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1964S0093613 DE1255199B (en) | 1964-10-03 | 1964-10-03 | Electroluminescent fluorescent body |
DES0093610 | 1964-10-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1255199B true DE1255199B (en) | 1967-11-30 |
Family
ID=25997846
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19641439455 Pending DE1439455A1 (en) | 1964-10-03 | 1964-10-03 | Semiconductor component with blocking multiple tip contact |
DE1964S0093613 Pending DE1255199B (en) | 1964-10-03 | 1964-10-03 | Electroluminescent fluorescent body |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19641439455 Pending DE1439455A1 (en) | 1964-10-03 | 1964-10-03 | Semiconductor component with blocking multiple tip contact |
Country Status (5)
Country | Link |
---|---|
BE (1) | BE669846A (en) |
CH (1) | CH438488A (en) |
DE (2) | DE1439455A1 (en) |
GB (1) | GB1119215A (en) |
NL (1) | NL6512617A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2443743A1 (en) * | 1978-12-04 | 1980-07-04 | Colburn William | ELECTRONIC DEVICE CONTAINING A COMPOSITE MATERIAL AND ITS MANUFACTURING METHOD |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4857416A (en) * | 1987-12-31 | 1989-08-15 | Loctite Luminescent Systems, Inc. | Infra-red emitting electroluminescent lamp structures |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE962357C (en) * | 1954-11-01 | 1957-04-18 | Westinghouse Electric Corp | Electric fluorescent cell |
DE1020115B (en) * | 1955-06-08 | 1957-11-28 | Pintsch Licht G M B H | Luminous capacitor |
DE1031422B (en) * | 1956-03-22 | 1958-06-04 | Westinghouse Electric Corp | Voltage electroluminescent cell and process for their manufacture |
-
1964
- 1964-10-03 DE DE19641439455 patent/DE1439455A1/en active Pending
- 1964-10-03 DE DE1964S0093613 patent/DE1255199B/en active Pending
-
1965
- 1965-09-20 BE BE669846D patent/BE669846A/xx unknown
- 1965-09-23 CH CH1316865A patent/CH438488A/en unknown
- 1965-09-29 NL NL6512617A patent/NL6512617A/xx unknown
- 1965-10-04 GB GB4207565A patent/GB1119215A/en not_active Expired
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE962357C (en) * | 1954-11-01 | 1957-04-18 | Westinghouse Electric Corp | Electric fluorescent cell |
DE1020115B (en) * | 1955-06-08 | 1957-11-28 | Pintsch Licht G M B H | Luminous capacitor |
DE1031422B (en) * | 1956-03-22 | 1958-06-04 | Westinghouse Electric Corp | Voltage electroluminescent cell and process for their manufacture |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2443743A1 (en) * | 1978-12-04 | 1980-07-04 | Colburn William | ELECTRONIC DEVICE CONTAINING A COMPOSITE MATERIAL AND ITS MANUFACTURING METHOD |
Also Published As
Publication number | Publication date |
---|---|
NL6512617A (en) | 1966-04-04 |
DE1439455A1 (en) | 1968-12-05 |
GB1119215A (en) | 1968-07-10 |
CH438488A (en) | 1967-06-30 |
BE669846A (en) | 1966-01-17 |
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