DE1195868B - Method for producing an electrical semiconductor component with a single-crystal semiconductor body - Google Patents

Method for producing an electrical semiconductor component with a single-crystal semiconductor body

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Publication number
DE1195868B
DE1195868B DES52018A DES0052018A DE1195868B DE 1195868 B DE1195868 B DE 1195868B DE S52018 A DES52018 A DE S52018A DE S0052018 A DES0052018 A DE S0052018A DE 1195868 B DE1195868 B DE 1195868B
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Prior art keywords
aluminum
carrier plate
molybdenum
alloyed
semiconductor body
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Pending
Application number
DES52018A
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German (de)
Inventor
Dipl-Phys Hubert Patalong
Horst Walther
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Siemens AG
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Siemens AG
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Application filed by Siemens AG filed Critical Siemens AG
Priority to DES52018A priority Critical patent/DE1195868B/en
Priority to CH354859D priority patent/CH354859A/en
Publication of DE1195868B publication Critical patent/DE1195868B/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3201—Structure
    • H01L2224/32012—Structure relative to the bonding area, e.g. bond pad
    • H01L2224/32014—Structure relative to the bonding area, e.g. bond pad the layer connector being smaller than the bonding area, e.g. bond pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01014—Silicon [Si]
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    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01039—Yttrium [Y]
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    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01049—Indium [In]
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    • H01L2924/01068—Erbium [Er]
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    • H01L2924/01072—Hafnium [Hf]
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    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Description

Verfahren zum Herstellen eines elektrischen Halbleiterbauelementes mit einkristallinem Halbleiterkörper Bekannt sind Verfahren zum Herstellen eines elektrischen Halbleiterbauelementes mit einkristallinem Halbleiterkörper, der mit Hilfe einer einlegierten Metallelektrode auf einer Trägerplatte aus Molybdän oder Wolfram befestigt ist. Die beiden genannten Metalle sind als Träger für Germanium-und Siliziumscheiben besonders gut geeignet, weil ihre Wärmedehnung von derjenigen der genannten Halbleiter in dem in Betracht kommenden Temperaturbereich nur wenig abweicht. Unter demselben Gesichtspunkt können die genannten Metalle auch für gewisse andere Halbleiterstoffe vorzugsweise mit Diamantgitter, wie z. B. AIIIBv-Verbindungen, mit Vorteil verwendet werden.Method for producing an electrical semiconductor component with a monocrystalline semiconductor body are known methods for producing a electrical semiconductor component with a monocrystalline semiconductor body with With the help of an alloyed metal electrode on a support plate made of molybdenum or Tungsten is attached. The two metals mentioned are used as carriers for germanium and Silicon wafers are particularly suitable because their thermal expansion is different from that of the said semiconductor deviates only slightly in the temperature range in question. From the same point of view, the metals mentioned can also be used for certain others Semiconductor materials, preferably with a diamond lattice, such as. B. AIIIBv connections, can be used to advantage.

Es ist ferner bekannt, die Vereinigung des Halbleiterkörpers mit der Trägerplatte aus Molybdän oder Wolfram bei Verwendung von Dötierungsmaterialien wie Indium oder einer Blei-Antimon-Legierung durch Vergolden der Trägerplatte zu erleichtern. Dieses Mittel versagt aber, und die Vereinigung der Teile durch Legieren bereitet Schwierigkeiten, wenn - wie es an sich bekannt ist - Aluminium als Elektrodenmetall zwischen dem Halbleiterkörper, z. B. einer Siliziumscheibe, und der Trägerplatte verwendet wird. Werden nämlich die Kontaktmetalle mit dem Halbleiter in der Reihenfolge Silizium-Aluminium-Molybdän einfach zusammengepreßt und erhitzt, so legiert bei Temperaturen unter etwa 1000° C nur Aluminium mit Silizium, während sich das Molybdän an dem Legierungsvorgang nicht beteiligt; vermutlich findet zwischen dem Aluminium und dem Molybdän keine ausreichende Benetzung statt. Deshalb kommt eine mechanisch feste Vereinigung mit der Trägerplatte nicht zustande. Die Anwendung höherer Temperaturen aber ist in der Regel unerwünscht, weil die Abnahme der Diffusionslänge der Ladungsträger im Bereich oberhalb von etwa 800° C die Brauchbarkeit der so behandelten Halbleiterbauelemente in Frage stellt. Für Germanium und andere Halbleitermaterialien gilt Ähnliches für entsprechend andere Behandlungstemperaturen, die zu den Schmelztemperaturen der betreffenden Halbleitermaterialien in ähnlichem Verhältnis stehen. Andererseits entspricht das Verhalten von Wolfram dem des Molybdäns in dem geschilderten Zusammenhang.It is also known, the union of the semiconductor body with the Carrier plate made of molybdenum or tungsten when using doping materials like indium or a lead-antimony alloy by gilding the carrier plate facilitate. But this means fails, and so does the union of the parts by alloying causes difficulties when - as is known per se - aluminum is used as the electrode metal between the semiconductor body, e.g. B. a silicon wafer, and the carrier plate is used. Namely, the contact metals with the semiconductor will be in the order Silicon-aluminum-molybdenum simply pressed together and heated, so alloyed with Temperatures below about 1000 ° C only aluminum with silicon, while the molybdenum not involved in the alloying process; presumably takes place between the aluminum and the molybdenum insufficient wetting takes place. That's why one comes mechanically Fixed union with the carrier plate does not materialize. The use of higher temperatures but is usually undesirable because of the decrease in the diffusion length of the charge carriers in the range above about 800 ° C., the usefulness of the semiconductor components treated in this way questions. The same applies to germanium and other semiconductor materials correspondingly other treatment temperatures that correspond to the melting temperatures of the relevant semiconductor materials are in a similar ratio. on the other hand the behavior of tungsten corresponds to that of molybdenum in the context described.

Man hat nun die erwähnte Schwierigkeit beim Herstellen einer Siliziumdiode durch Verwendung einer Trägerplatte aus gesintertem Wolfram, das mit Aluminium imprägniert ist, dem zur Unterstützung der Haftung 1114 Silizium zugesetzt ist, zu beheben versucht. Mit der Erfindung wird demgegenüber eine Vereinfächung ermöglicht. Die Erfindung bezieht sich demzufolge auf ein Verfahren zum Herstellen eines elektrischen Halbleiterbauelementes mit einem einkristallinen Halbleiterkörper, der mittels einer einlegierten Aluminiumelektrode auf einer Trägerplatte aus Molybdän oder Wolfram befestigt ist, und ist dadurch gekennzeichnet, daß auf ein einfaches Molybdän- oder Wolframblech zunächst eine erste Aluminiumschicht aufgebracht und dort durch eine erste Wärmebehandlung teilweise einlegiert wird, und daß die so vorbehandelte Trägerplatte mit einer weiteren Aluminiumschicht und dem Halbleiterkörper durch eine zweite Wärmebehandlung zusammenlegiert wird.One now has the aforementioned difficulty in manufacturing a silicon diode by using a carrier plate made of sintered tungsten, which is impregnated with aluminum is to which 1114 silicon is added to support adhesion. In contrast, the invention enables simplification. The invention consequently relates to a method for producing an electrical semiconductor component with a monocrystalline semiconductor body, which by means of an alloyed aluminum electrode is attached to a carrier plate made of molybdenum or tungsten, and is thereby characterized that on a simple molybdenum or tungsten sheet initially one applied first aluminum layer and partially there by a first heat treatment is alloyed, and that the carrier plate pretreated in this way with a further aluminum layer and the semiconductor body is alloyed together by a second heat treatment.

Die Erfindung soll an Hand der F i g. 1 und 2 näher erläutert werden. Die F i g. 1 zeigt eine Siliziumscheibe 10 von etwa 0,5 mm Dicke und 12 mm Durchmesser, welche mit einer Aluminiumfolie 11 kontaktiert und mit einem Molybdänplättchen 12 von 0,8 mm Dicke und 15 mm Durchmesser zusammenlegiert werden soll.The invention is to be based on the F i g. 1 and 2 are explained in more detail. The F i g. 1 shows a silicon wafer 10 approximately 0.5 mm thick and 12 mm in diameter, which is in contact with an aluminum foil 11 and with a molybdenum plate 12 0.8 mm thick and 15 mm in diameter are to be alloyed together.

Zur Vorbereitung dieses Prozesses wird die obere Fläche des Molybdänplättchens 12 zunächst für sich mit einer besonderen Aluminiumfolie legiert nach folgenden Verfahren: Die genannte Fläche wird fein gesandstrahlt, und danach in Flußsäure (HF) geätzt. Die besondere Aluminiumfolie, deren Dicke etwa 0,02 mm betragen möge, wird, damit Lufteinschlüsse beim Plattieren nicht entstehen können, mittels einer geeigneten Vorrichtung, z. B. einer Nadelspitze, fein perforiert, und zwar vorteilhaft so dicht, daß sich auf 1 mm2 etwa zwei bis drei Einstiche befinden. Nachdem auch diese Aluminiumfolie in Flußsäure (HF) geätzt ist, wird sie mit einem Druck von mindestens etwa 5 t/cm2 auf das Molybdänplättchen 12 gepreßt, so daß sie fest auf diesem haftet. Dann werden diese beiden Metalle durch Erhitzung auf etwa 900° C für eine Dauer von etwa 15 Sekunden bis 2 Minuten in einem Schutzgas, z. B. Stickstoff, miteinander legiert. Danach befindet sich auf dem Molybdänplättchen eine aus Molybdän und Aluminium bestehende Legierungsschicht, die in F i g. 1 mit 13 bezeichnet ist.To prepare for this process, the upper surface of the molybdenum plate 12 is first alloyed with a special aluminum foil according to the following process: The surface is finely sandblasted and then etched in hydrofluoric acid (HF). The special aluminum foil, the thickness of which may be about 0.02 mm, is, so that air inclusions cannot arise during plating, by means of a suitable device, e.g. B. a needle point, finely perforated, and advantageously so close that there are about two to three punctures on 1 mm2. After this aluminum foil has also been etched in hydrofluoric acid (HF), it is pressed onto the molybdenum plate 12 with a pressure of at least about 5 t / cm 2 so that it adheres firmly to it. Then these two metals are heated to about 900 ° C for a period of about 15 seconds to 2 minutes in a protective gas, z. B. nitrogen, alloyed together. Then there is an alloy layer consisting of molybdenum and aluminum on the molybdenum plate, which is shown in FIG. 1 is denoted by 13.

Das nun folgende Kontaktieren des Halbleiterkörpers 10 erfolgt mittels einer zweiten Wärmebehandlung mit einer Erhitzung bis auf etwa 800° C, und zwar etwa für die Dauer von 2 Minuten. Die Aluminiumfolie 11, die etwa 0,05 mm dick sein kann, bildet bei der zweiten Wärmebehandlung eine Aluminium-Silizium-Legierung, aus der bei der Abkühlung, infolge teilweiser Rekristallisation von Silizium ein hochdotierter p-leitender Bereich im Silizium entsteht, welcher der Aluminiumelektrode vorgelagert ist und Spuren von Aluminium als Verunreinigungen enthält. Die verschiedenen Schichten des fertig kontaktierten Halbleitersystems sind in der F i g. 2 deutlich zu erkennen, in der ein Teilschnitt des in F i g. 1 abgebildeten Elementes in noch größerem Maßstab dargestellt ist, und zwar in dem Zustand nach der zweiten Wärmebehandlung. Hier befindet sich zwischen der Siliziumscheibe 10 und der mit Aluminium legierten Oberflächenschicht 13 des Molybdänplättchens 12 eine Legierungsschicht 11 a aus Aluminium und Silizium, die durch Einlegieren der ursprünglichen Aluminiumfolie 11 in das Silizium der Scheibe 10 entstanden und durch den Legierungsprozeß sowohl mit der Scheibe 10 als auch mit dem Trägerplättchen 12 fest verbunden ist. Der Schicht 11a ist in der Siliziumscheibe 10 eine Schicht 10a vorgelagert, deren innere Grenze durch eine gestrichelte Linie angedeutet ist. Sie bezeichnet zugleich die Grenze, bis zu welcher die Legierungsfront bei der zweiten Wärmebehandlung in das Silizium eingedrungen war. Beim Erkalten ist die Legierungsfront um die Dicke der Schicht 10 a zurückgegangen, wobei jedoch Spuren von Aluminium in der Schicht 10a zurückgeblieben sind. Ohne die besondere Aluminiumfolie 11 würde zwar auch eine Legierungsbildung zwischen der aluminiumhaltigen Oberflächenschicht des Molybdänplättchens und dem Silizium stattfinden, jedoch unterbleibt dann, wie sich gezeigt hat, beim Erkalten die teilweise Rekristallisation des Silizums und das Zurückgehen der Legierungsfront. Es bildet sich also kein hochdotierter p-leitender Bereich. Anscheinend ist daran die Anwesenheit des Molybdänanteils schuld.The subsequent contacting of the semiconductor body 10 takes place by means of a second heat treatment with heating up to about 800 ° C., specifically for a period of about 2 minutes. The aluminum foil 11, which can be about 0.05 mm thick, forms an aluminum-silicon alloy during the second heat treatment, from which a highly doped p-conductive area in the silicon, which is the aluminum electrode, is formed during cooling as a result of partial recrystallization of silicon is upstream and contains traces of aluminum as impurities. The various layers of the fully contacted semiconductor system are shown in FIG. 2 can be clearly seen, in which a partial section of the in F i g. 1 is shown on an even larger scale, namely in the state after the second heat treatment. Here is located between the silicon wafer 10 and alloyed with aluminum coating layer 13 of molybdenum plate 12, an alloy layer 11 a made of aluminum and silicon, formed by alloying of the original aluminum foil 11 in the silicon of the wafer 10 and by the alloying process with both the disc 10 as is also firmly connected to the carrier plate 12. The layer 11 a is preceded in the silicon wafer 10 by a layer 10 a, the inner boundary of which is indicated by a dashed line. It also denotes the limit up to which the alloy front penetrated the silicon during the second heat treatment. On cooling, the alloy front has decreased by the thickness of the layer 10 a, but traces of aluminum have remained in the layer 10 a. Without the special aluminum foil 11, an alloy would indeed be formed between the aluminum-containing surface layer of the molybdenum plate and the silicon, but then, as has been shown, the partial recrystallization of the silicon and the receding of the alloy front do not occur when cooling. So no highly doped p-conductive area is formed. Apparently this is due to the presence of the molybdenum component.

Claims (3)

Patentansprüche: 1. Verfahren zum Herstellen eines elektrischen Halbleiterbauelementes mit einem einkristallinen Halbleiterkörper, der mittels einer einlegierten Aluminiumelektrode auf einer Trägerplatte aus Molybdän oder Wolfram befestigt ist, d a d u r c h gekennzeichnet, daß auf ein einfaches Molybdän- oder Wolframblech zunächst eine erste Aluminiumschicht aufgebracht und dort durch eine erste Wärmebehandlung teilweise einlegiert wird und daß die so vorbehandelte Trägerplatte mit einer weiteren Aluminiumschicht und dem Halbleiterkörper durch eine zweite Wärmebehandlung zusammenlegiert wird. Claims: 1. Method for producing an electrical semiconductor component with a monocrystalline semiconductor body, which by means of an alloyed aluminum electrode is attached to a carrier plate made of molybdenum or tungsten, d a d u r c h marked, that on a simple molybdenum or tungsten sheet initially a first aluminum layer is applied and partially alloyed there by a first heat treatment and that the carrier plate thus pretreated with a further aluminum layer and the semiconductor body is alloyed together by a second heat treatment. 2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß als erste Aluminiumschicht eine Aluminiumfolie verwendet wird, mit der die aufgerauhte Seite der Trägerplatte durch Rufpressen plattiert wird. 2. Method according to Claim 1, characterized in that the first aluminum layer an aluminum foil is used, with the roughened side of the carrier plate is plated by ram pressing. 3. Verfahren nach Anspruch 2, dadurch gekennzeichnet, daß die Aluminiumfolie vor dem Rufpressen auf die Trägerplatte perforiert wird. In Betracht gezogene Druckschriften: Deutsche Patentanmeldung 14677 VIII c / 21 g (bekanntgemacht am 29. 5. 1952); bekanntgemachte Unterlagen zum belgischen Patent Nr. 540 780; T o r r e y und W h i t m e n, » Chrystal Rectifiers «, 1948, S. 317.3. The method according to claim 2, characterized in that the aluminum foil is perforated before the Rufpressen on the carrier plate. Considered publications: German patent application 14677 VIII c / 21 g (published May 29, 1952); published documents on Belgian patent No. 540 780; T orrey and W hitmen, "Chrystal Rectifiers," 1948, p. 317.
DES52018A 1957-01-23 1957-01-23 Method for producing an electrical semiconductor component with a single-crystal semiconductor body Pending DE1195868B (en)

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DES52018A DE1195868B (en) 1957-01-23 1957-01-23 Method for producing an electrical semiconductor component with a single-crystal semiconductor body
CH354859D CH354859A (en) 1957-01-23 1958-01-20 Method for producing an electrical semiconductor device with a single-crystal semiconductor body

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DES52018A DE1195868B (en) 1957-01-23 1957-01-23 Method for producing an electrical semiconductor component with a single-crystal semiconductor body

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE540780A (en) * 1954-08-26 1900-01-01

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE540780A (en) * 1954-08-26 1900-01-01

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