DE1132405B - Process for localized etching of the surface of workpieces, in particular semiconductor crystals - Google Patents
Process for localized etching of the surface of workpieces, in particular semiconductor crystalsInfo
- Publication number
- DE1132405B DE1132405B DES71135A DES0071135A DE1132405B DE 1132405 B DE1132405 B DE 1132405B DE S71135 A DES71135 A DE S71135A DE S0071135 A DES0071135 A DE S0071135A DE 1132405 B DE1132405 B DE 1132405B
- Authority
- DE
- Germany
- Prior art keywords
- layer
- etching
- workpiece
- exposed
- parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title claims description 25
- 238000000034 method Methods 0.000 title claims description 13
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 239000013078 crystal Substances 0.000 title claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 20
- 239000007788 liquid Substances 0.000 claims description 8
- 239000004922 lacquer Substances 0.000 claims description 2
- 238000007711 solidification Methods 0.000 claims description 2
- 230000008023 solidification Effects 0.000 claims description 2
- 238000009489 vacuum treatment Methods 0.000 claims description 2
- 238000006116 polymerization reaction Methods 0.000 claims 1
- 239000002253 acid Substances 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Description
Verfahren zum lokalisierten Ätzen der Oberfläche von Werkstücken, insbesondere von Halbleiterkristallen Häufig ist es beim lokalisierten Ätzen von Werkstücken erwünscht, die Ätzwirkung auf einen geometrisch exakt definierten Teil der Oberfläche eines Werkstückes zu beschränken. Hierzu steht ein in der Literatur als »Fotolithographie« bezeichnetes Verfahren zur Verfügung. Dieses besteht darin, daß man auf die Oberfläche des Werkstückes eine lichtempfindliche Schicht aufbringt, die von dem anzuwendenden Ätzmittel nicht gelöst wird. Diese Schicht wird entsprechend einem vorgegebenen Muster, z. B. durch Projektion, belichtet und anschließend entwickelt. Die nichtbelichteten Teile der lichtempfindlichen Schicht werden entweder während des Entwicklungsvorganges oder durch Nachbehandlung mit einem geeigneten, die belichteten Teile der Schicht nicht angreifenden Lösungsmittel, z. B. Wasser, entfernt. Anschließend wird die Oberfläche des Werkstückes dem Ätzvorgang unterworfen, wobei die von den verbleibenden Teilen der lichtempfindlichen Schicht abgedeckten Oberflächenstellen mit der Ätzflüssigkeit nicht in Berührung kommen und deshalb vom Ätzvorgang nicht erfaßt werden. Dieses Verfahren gestattet, die abzutragende Oberfläche des Werkstückes auch bei sehr klei-3 nen Abmessungen mit großer Genauigkeit festzulegen und wird deshalb auch bei der Herstellung von Halbleitervorrichtungen, z. B. Mesatransistoren, angewendet.Process for localized etching of the surface of workpieces, In particular of semiconductor crystals it is often the case with localized etching of Workpieces desired, the etching effect on a geometrically precisely defined part to restrict the surface of a workpiece. For this there is a in the literature a process known as "photolithography" is available. This consists in that a light-sensitive layer is applied to the surface of the workpiece, which is not dissolved by the etchant to be used. This layer will be accordingly a predetermined pattern, e.g. B. by projection, exposed and then developed. The unexposed parts of the photosensitive layer are either during the development process or by post-treatment with a suitable, the exposed Parts of the layer non-corrosive solvents, e.g. B. water removed. Afterward the surface of the workpiece is subjected to the etching process, with the remaining parts of the photosensitive layer covered surface areas do not come into contact with the etching liquid and therefore not from the etching process can be detected. This method allows the surface of the workpiece to be removed to be determined with great accuracy even with very small dimensions therefore also in the manufacture of semiconductor devices, e.g. B. Mesa transistors, applied.
Für die lichtempfindliche Schicht werden vor allem Fotolacke verwendet, die im Dunklen oder bei einer Belichtung, gegen die der Fotolack unempfindlich ist, auf der Oberfläche des Werkstückes, beispielsweise eines Halbleiterkristalls, aufgebracht werden. Es empfiehlt sich dabei, den Fotolack aufzustreichen und zur Erzielung einer gleichmäßigen Schichtdicke das Werkstück rasch rotieren zu lassen. Der Fotolack besitzt die Konsistenz einer zähen Flüssigkeit, so daß auf diese Weise selbst dünne Schichten mit verhältnismäßiger Stärke erzeugt werden können.Photoresists are mainly used for the light-sensitive layer, in the dark or in an exposure to which the photoresist is insensitive, applied to the surface of the workpiece, for example a semiconductor crystal will. It is advisable to apply the photoresist and to achieve a uniform layer thickness to let the workpiece rotate quickly. The photoresist possesses the consistency of a viscous liquid, making itself thin in this way Layers of relative thickness can be generated.
Bekannte Fotolacke sind vielfach monomere oder niederpolymere organische Stoffe, die bei entsprechender Belichtung entweder spontan oder infolge der Einwirkung beigemischter Sensibilisatoren, die durch die Belichtung aktiviert werden, polymerisieren und dadurch eine gallerteartige Beschaffenheit erhalten. Sie sind in den für Halbleiterzwecke normalerweise üblichen Ätzmitteln, insbesondere Säuren, sowohl in belichtetem als auch in unbelichtetem Zustand unlöslich. Als Entwickler dienen gewisse organische Flüssigkeiten, welche die unbelichteten Lackschichten entweder selbst lösen oder mindestens so weit verändern, daß sie, beispielsweise durch Einwirken von Wasser, leicht entfernt werden können. Die belichteten Teile der Fotolackschicht werden dagegen weder vom Entwickler noch bei der Wässerung gelöst. Da die belichtete Fotolackschicht mechanisch relativ wenig widerstandsfähig ist, empfiehlt es sich, diese vor dem Ätzvorgang zu verfestigen, was durch eine mehrstündige Wärmebehandlung bei etwa 1501 C möglich ist.Known photoresists are often monomeric or low-polymer organic substances which, when exposed to the appropriate light, polymerize either spontaneously or as a result of the action of added sensitizers that are activated by the exposure, and thereby acquire a gelatinous texture. They are insoluble in the etching agents normally used for semiconductor purposes, in particular acids, both in the exposed and in the unexposed state. Certain organic liquids are used as developers, which either dissolve the unexposed lacquer layers themselves or at least change them to such an extent that they can be easily removed, for example by the action of water. The exposed parts of the photoresist layer, on the other hand, are neither dissolved by the developer nor during the washing process. Since the exposed photoresist layer has relatively little mechanical resistance, it is advisable to solidify it before the etching process, which is possible by a heat treatment at around 150 ° C. for several hours.
Derartig behandelte Fotolackschichten können, wie sich anläßlich bei der mit ihrer Hilfe vorgenommenen Ätzbehandlungen von Halbleitern gezeigt hat, jedoch in bereits kurzer Zeit von dem Ätzmittel durchdrungen werden. Häufig findet auch ein Abbröckeln oder ein Abheben der Fotolackschicht von ihrer Unterlage während des Ätzvorganges statt. Die nicht ausgehärteten Fotolackschichten sind ebenfalls gegen mechanische Beans ruchungen, die sich bei den während p des Atzvorganges notwendigen Manipulationen nicht vermeiden lassen, empfindlich und stellen deshalb ebenfalls keinen genügenden Schutz gegen ein Vordrin-en der Ätzflüssigkeit zur Oberfläche des Werkstückes dar.Photoresist layers treated in this way can, as shown on the occasion of has shown the etching treatments of semiconductors carried out with their help, however be penetrated by the etchant in a short time. Often also takes place crumbling or lifting of the photoresist layer from its base during the etching process instead. The uncured photoresist layers are also against mechanical Beans ruchungen, which are necessary during the etching process Tampering cannot be avoided, sensitive and therefore also pose insufficient protection against penetration of the etching liquid to the surface of the workpiece.
Die Erfindung bezieht sich auf ein Verfahren zum lokalisierten Ätzen der Oberfläche von Werkstücken, insbesondere von Halbleiterkristallen, bei dem auf die Oberfläche des Werkstückes eine Schicht aus fotopolymerisierbarem Lack aufgebracht, diese Schicht stellenweise belichtet, entwickelt und nach Entfernung der unbelichteten Schichtteile sowie Verfestigung der belichteten Schichtteile, die von diesen unbedeckten Teile der Oberfläche des Werkstückes mindestens zum Teil mit der AtzflÜssigkeit in Berührung gebracht und geätzt werden. Zur Vermeidung der beschriebenen Nachteile ist gemäß der Erfindung vorgesehen, daß die Aushärtung der FotolackschIcht unter Vakuum, insbesondere Hochvakuum, bei einer so niedrigen Temperatur, insbesondere Zimmertemperatur, vorgenommen wird, daß ein merkliches Weiterpolymerisieren der Fotolackschicht während dieser Vakuumbehandlung nicht stattfindet.The invention relates to a method for localized etching the surface of workpieces, in particular of semiconductor crystals, in which on a layer of photopolymerizable varnish is applied to the surface of the workpiece, this layer exposed in places, developed and after removal of the unexposed Parts of the layer and solidification of the exposed parts of the layer that are not covered by them Parts of the surface of the workpiece at least partly with the Etching liquid are brought into contact and etched. To avoid the described Disadvantages is provided according to the invention that the curing of the photoresist layer under vacuum, especially high vacuum, at such a low temperature, in particular Room temperature, that a noticeable further polymerisation of the Photoresist layer does not take place during this vacuum treatment.
Dabei ist vorgesehen, daß das Werkstück nach dem Entwickeln und Entfernen der nicht belichteten Teile der Fotolackschicht mindestens 3 Stunden einem Hochvakuum von mindestens 10-4 Torr, vorzugsweise von 10-5 Torr, oder einem noch stärkerem Vakuum bei Zimmertemperatur ausgesetzt wird.It is provided that the workpiece is exposed to a high vacuum of at least 10-4 Torr, preferably 10-5 Torr, or an even stronger vacuum at room temperature for at least 3 hours after the development and removal of the unexposed parts of the photoresist layer.
Die so behandelten belichteten Fotolackschichten sind gegen die Ätzflüssigkeit in wesentlich höherem Maße undurchlässig als die durch Wännebehandlung verfestigten Schichten. Dem entspricht, daß ein Ätzeffekt auf die von der belichteten Fotolackschicht bedeckten Teile der Werkstückoberfläche, wenn die Fotolackschicht entsprechend der Lehre der Erfindung verfestigt wurde, auch bei Behandlung mit starken Säuren während beim Ätzen von Halbleitern anzuwendenden Ätzzeiten nicht festgestellt werden konnte. So konnte beim Ätzen von Siliziumkristallen eine aus 10 Teilen HNO, und 1 Teil HF bestehende Ätzflüssigkeit 15 Minuten angewendet werden, ohne daß sich an den durch den Fotolack abgedeckten Oberflächenstellen Ätzspuren zeigten. Die erzielte Ätztiefe betrug dabei 15 #t.The exposed photoresist layers treated in this way are impermeable to the etching liquid to a much greater extent than the layers solidified by heat treatment. This corresponds to the fact that an etching effect on the parts of the workpiece surface covered by the exposed photoresist layer, when the photoresist layer was solidified according to the teaching of the invention, could not be determined even when treated with strong acids during the etching times to be used when etching semiconductors. For example, when etching silicon crystals, an etching liquid consisting of 10 parts of HNO and 1 part of HF could be used for 15 minutes without showing any traces of etching on the surface areas covered by the photoresist. The achieved etching depth was 15 #t.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES71135A DE1132405B (en) | 1960-11-04 | 1960-11-04 | Process for localized etching of the surface of workpieces, in particular semiconductor crystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES71135A DE1132405B (en) | 1960-11-04 | 1960-11-04 | Process for localized etching of the surface of workpieces, in particular semiconductor crystals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1132405B true DE1132405B (en) | 1962-06-28 |
Family
ID=7502260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DES71135A Pending DE1132405B (en) | 1960-11-04 | 1960-11-04 | Process for localized etching of the surface of workpieces, in particular semiconductor crystals |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE1132405B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1514683B1 (en) * | 1966-02-12 | 1970-04-02 | Siemens Ag | Method for generating electrical shunts for bridging pn junctions in semiconductor bodies |
| DE3122544A1 (en) * | 1981-06-05 | 1982-12-30 | Siemens AG, 1000 Berlin und 8000 München | Process and apparatus for etching through-holes in glass sheets |
-
1960
- 1960-11-04 DE DES71135A patent/DE1132405B/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1514683B1 (en) * | 1966-02-12 | 1970-04-02 | Siemens Ag | Method for generating electrical shunts for bridging pn junctions in semiconductor bodies |
| DE3122544A1 (en) * | 1981-06-05 | 1982-12-30 | Siemens AG, 1000 Berlin und 8000 München | Process and apparatus for etching through-holes in glass sheets |
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