DE112011100989A5 - Production method of a semiconductor solar cell - Google Patents

Production method of a semiconductor solar cell Download PDF

Info

Publication number
DE112011100989A5
DE112011100989A5 DE112011100989T DE112011100989T DE112011100989A5 DE 112011100989 A5 DE112011100989 A5 DE 112011100989A5 DE 112011100989 T DE112011100989 T DE 112011100989T DE 112011100989 T DE112011100989 T DE 112011100989T DE 112011100989 A5 DE112011100989 A5 DE 112011100989A5
Authority
DE
Germany
Prior art keywords
solar cell
production method
semiconductor solar
semiconductor
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112011100989T
Other languages
German (de)
Inventor
Matthias Erdmann
Peter Engelhart
Robert Seguin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hanwha Q Cells GmbH
Original Assignee
Hanwha Q Cells GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hanwha Q Cells GmbH filed Critical Hanwha Q Cells GmbH
Publication of DE112011100989A5 publication Critical patent/DE112011100989A5/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0236Special surface textures
    • H01L31/02363Special surface textures of the semiconductor body itself, e.g. textured active layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868Passivation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
DE112011100989T 2010-03-24 2011-02-28 Production method of a semiconductor solar cell Pending DE112011100989A5 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102010016122A DE102010016122A1 (en) 2010-03-24 2010-03-24 Production method of a semiconductor solar cell
DE102010016122.5 2010-03-24
PCT/DE2011/075032 WO2011116762A2 (en) 2010-03-24 2011-02-28 Method for producing a semiconductor solar cell

Publications (1)

Publication Number Publication Date
DE112011100989A5 true DE112011100989A5 (en) 2013-09-19

Family

ID=44116195

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102010016122A Withdrawn DE102010016122A1 (en) 2010-03-24 2010-03-24 Production method of a semiconductor solar cell
DE112011100989T Pending DE112011100989A5 (en) 2010-03-24 2011-02-28 Production method of a semiconductor solar cell

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102010016122A Withdrawn DE102010016122A1 (en) 2010-03-24 2010-03-24 Production method of a semiconductor solar cell

Country Status (3)

Country Link
CN (1) CN102822987B (en)
DE (2) DE102010016122A1 (en)
WO (1) WO2011116762A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI20125988A (en) * 2012-09-24 2014-03-25 Optitune Oy A method for modifying n-type silicon substrate
FI20125989A (en) * 2012-09-24 2014-03-25 Optitune Oy A method for manufacturing a photoelectric device
FI20125987A (en) * 2012-09-24 2014-03-25 Optitune Oy Method of passivating a silicon substrate for use in a photovoltaic device
DE102013219603A1 (en) * 2013-09-27 2015-04-02 International Solar Energy Research Center Konstanz E.V. Process for producing a solar cell
CN105914255A (en) * 2016-04-19 2016-08-31 中利腾晖光伏科技有限公司 Solar cell and manufacturing method therefor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2706113B2 (en) * 1988-11-25 1998-01-28 工業技術院長 Photoelectric conversion element
JP2004193350A (en) * 2002-12-11 2004-07-08 Sharp Corp Solar battery cell and its manufacturing method
JP4767110B2 (en) * 2006-06-30 2011-09-07 シャープ株式会社 Solar cell and method for manufacturing solar cell
US8008575B2 (en) * 2006-07-24 2011-08-30 Sunpower Corporation Solar cell with reduced base diffusion area
DE102007054384A1 (en) 2007-11-14 2009-05-20 Institut Für Solarenergieforschung Gmbh Method for producing a solar cell with a surface-passivating dielectric double layer and corresponding solar cell
EP2339648A1 (en) * 2009-12-23 2011-06-29 Applied Materials, Inc. Enhanced passivation layer for wafer based solar cells, method and system for manufacturing thereof

Also Published As

Publication number Publication date
CN102822987B (en) 2016-04-27
WO2011116762A3 (en) 2012-07-05
DE102010016122A1 (en) 2011-09-29
WO2011116762A2 (en) 2011-09-29
CN102822987A (en) 2012-12-12

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Legal Events

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R012 Request for examination validly filed
R082 Change of representative

Representative=s name: ADARES PATENT- UND RECHTSANWAELTE REININGER & , DE

R016 Response to examination communication
R016 Response to examination communication