DE112007003287A5 - Kameramodul auf Waferebene - Google Patents

Kameramodul auf Waferebene Download PDF

Info

Publication number
DE112007003287A5
DE112007003287A5 DE112007003287T DE112007003287T DE112007003287A5 DE 112007003287 A5 DE112007003287 A5 DE 112007003287A5 DE 112007003287 T DE112007003287 T DE 112007003287T DE 112007003287 T DE112007003287 T DE 112007003287T DE 112007003287 A5 DE112007003287 A5 DE 112007003287A5
Authority
DE
Germany
Prior art keywords
camera module
wafer level
wafer
level
camera
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112007003287T
Other languages
English (en)
Inventor
Stephan Voltz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMOSIS Germany GmbH
Original Assignee
CMOSIS Germany GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CMOSIS Germany GmbH filed Critical CMOSIS Germany GmbH
Publication of DE112007003287A5 publication Critical patent/DE112007003287A5/de
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14636Interconnect structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1464Back illuminated imager structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687Wafer level processing
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50Constructional details
    • H04N23/54Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50Constructional details
    • H04N23/55Optical parts specially adapted for electronic image sensors; Mounting thereof
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/57Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14625Optical elements or arrangements associated with the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0232Optical elements or arrangements associated with the device

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE112007003287T 2006-11-20 2007-11-19 Kameramodul auf Waferebene Withdrawn DE112007003287A5 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102006054883.3 2006-11-20
DE102006054883 2006-11-20
DE102007038465A DE102007038465A1 (de) 2006-11-20 2007-08-14 Kameramodul auf Waferebene
DE102007038465.5 2007-08-14
PCT/DE2007/002101 WO2008061513A1 (de) 2006-11-20 2007-11-19 Kameramodul auf waferebene

Publications (1)

Publication Number Publication Date
DE112007003287A5 true DE112007003287A5 (de) 2009-10-22

Family

ID=39311383

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102007038465A Withdrawn DE102007038465A1 (de) 2006-11-20 2007-08-14 Kameramodul auf Waferebene
DE112007003287T Withdrawn DE112007003287A5 (de) 2006-11-20 2007-11-19 Kameramodul auf Waferebene

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102007038465A Withdrawn DE102007038465A1 (de) 2006-11-20 2007-08-14 Kameramodul auf Waferebene

Country Status (2)

Country Link
DE (2) DE102007038465A1 (de)
WO (1) WO2008061513A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107919373B (zh) * 2017-11-07 2019-03-12 德淮半导体有限公司 背照式图像传感器
CN110379805B (zh) * 2019-07-25 2021-02-05 豪威科技(上海)有限公司 图像传感器晶圆、芯片及其制作方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7160478B2 (en) * 2001-08-24 2007-01-09 Schott Ag Method for producing electronic componets
US7253957B2 (en) * 2004-05-13 2007-08-07 Micron Technology, Inc. Integrated optics units and methods of manufacturing integrated optics units for use with microelectronic imagers
US7397066B2 (en) * 2004-08-19 2008-07-08 Micron Technology, Inc. Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers
US7511262B2 (en) * 2004-08-30 2009-03-31 Micron Technology, Inc. Optical device and assembly for use with imaging dies, and wafer-label imager assembly

Also Published As

Publication number Publication date
WO2008061513A1 (de) 2008-05-29
DE102007038465A1 (de) 2008-05-21

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Legal Events

Date Code Title Description
8139 Disposal/non-payment of the annual fee