DE112007001239T8 - Verfahren zur Herstellung von Silicium - Google Patents
Verfahren zur Herstellung von Silicium Download PDFInfo
- Publication number
- DE112007001239T8 DE112007001239T8 DE200711001239 DE112007001239T DE112007001239T8 DE 112007001239 T8 DE112007001239 T8 DE 112007001239T8 DE 200711001239 DE200711001239 DE 200711001239 DE 112007001239 T DE112007001239 T DE 112007001239T DE 112007001239 T8 DE112007001239 T8 DE 112007001239T8
- Authority
- DE
- Germany
- Prior art keywords
- silicon
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/023—Preparation by reduction of silica or free silica-containing material
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B1/00—Electrolytic production of inorganic compounds or non-metals
- C25B1/01—Products
- C25B1/33—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006146386 | 2006-05-26 | ||
JP2006-146386 | 2006-05-26 | ||
PCT/JP2007/060714 WO2007139023A1 (ja) | 2006-05-26 | 2007-05-25 | シリコンの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE112007001239T5 DE112007001239T5 (de) | 2009-04-30 |
DE112007001239T8 true DE112007001239T8 (de) | 2009-09-03 |
Family
ID=38778544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE200711001239 Active DE112007001239T8 (de) | 2006-05-26 | 2007-05-25 | Verfahren zur Herstellung von Silicium |
Country Status (6)
Country | Link |
---|---|
US (1) | US8303796B2 (de) |
CN (1) | CN101454244B (de) |
CA (1) | CA2651989A1 (de) |
DE (1) | DE112007001239T8 (de) |
NO (1) | NO20085073L (de) |
WO (1) | WO2007139023A1 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120132034A1 (en) * | 2009-05-26 | 2012-05-31 | Sumitomo Chemical Company, Limited | Process for producing refined metal or metalloid |
KR101061991B1 (ko) | 2009-12-28 | 2011-09-05 | 한국기계연구원 | 태양전지용 후면전극 및 이의 제조방법 |
CN102220606B (zh) * | 2010-04-16 | 2012-07-04 | 中南大学 | 一种惰性阳极熔盐电解制备硅颗粒的方法 |
CN103261095A (zh) * | 2010-12-20 | 2013-08-21 | 盈保发展有限公司 | 用于制造硅的方法和装置 |
WO2012083480A1 (en) * | 2010-12-20 | 2012-06-28 | Epro Development Limited | Method and apparatus for producing pure silicon |
CN103103552B (zh) * | 2011-11-15 | 2016-04-13 | 国联汽车动力电池研究院有限责任公司 | 一种采用熔盐电解制取硅的方法 |
US10266951B2 (en) * | 2012-11-28 | 2019-04-23 | Trustees Of Boston University | Method and apparatus for producing solar grade silicon using a SOM electrolysis process |
KR101642026B1 (ko) * | 2013-08-19 | 2016-07-22 | 한국원자력연구원 | 전기화학적 실리콘 막 제조방법 |
CN105040020B (zh) * | 2015-08-10 | 2017-03-22 | 东北大学 | 利用离子液体低温电解SiO2制取高纯硅薄膜的方法 |
CN109930176A (zh) * | 2018-08-14 | 2019-06-25 | 华北理工大学 | 一种熔盐制备硅镍合金的方法 |
CN110642253B (zh) * | 2019-09-27 | 2022-10-11 | 南昌航空大学 | 一种铝热反应制备纳米还原硅的制备方法 |
US11827993B1 (en) | 2020-09-18 | 2023-11-28 | GRU Energy Lab Inc. | Methods of forming active materials for electrochemical cells using low-temperature electrochemical deposition |
EP4256111A1 (de) * | 2020-12-06 | 2023-10-11 | Helios Project Ltd. | Verfahren zur herstellung von silicium |
CN115305508A (zh) * | 2021-05-08 | 2022-11-08 | 郑州大学 | 利用高硅含铝资源生产金属铝和多晶硅的方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4292145A (en) * | 1980-05-14 | 1981-09-29 | The Board Of Trustees Of Leland Stanford Junior University | Electrodeposition of molten silicon |
DE3310828A1 (de) | 1983-03-24 | 1984-09-27 | Bayer Ag, 5090 Leverkusen | Verfahren zur herstellung von silicium |
DE3824065A1 (de) | 1988-07-15 | 1990-01-18 | Bayer Ag | Verfahren zur herstellung von solarsilicium |
NO942121L (no) | 1994-06-07 | 1995-12-08 | Jan Stubergh | Fremstilling og anordning for fremstilling av silisium-"metall", silumin og aluminium-metall |
AU1560097A (en) | 1996-01-22 | 1997-08-20 | Jan Reidar Stubergh | Production of high purity silicon metal, aluminium, their alloys, silicon carbide and aluminium oxide from alkali alkaline earth alumino silicates |
NO20010963D0 (no) | 2001-02-26 | 2001-02-26 | Norwegian Silicon Refinery As | FremgangsmÕte for fremstilling av silisium og/eller aluminium og silumin (aluminium-silisium-legering) |
-
2007
- 2007-05-25 US US12/302,466 patent/US8303796B2/en not_active Expired - Fee Related
- 2007-05-25 WO PCT/JP2007/060714 patent/WO2007139023A1/ja active Application Filing
- 2007-05-25 CA CA002651989A patent/CA2651989A1/en not_active Abandoned
- 2007-05-25 DE DE200711001239 patent/DE112007001239T8/de active Active
- 2007-05-25 CN CN2007800194471A patent/CN101454244B/zh not_active Expired - Fee Related
-
2008
- 2008-12-04 NO NO20085073A patent/NO20085073L/no not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
NO20085073L (no) | 2009-02-24 |
US8303796B2 (en) | 2012-11-06 |
CA2651989A1 (en) | 2007-12-06 |
CN101454244B (zh) | 2011-11-30 |
WO2007139023A1 (ja) | 2007-12-06 |
CN101454244A (zh) | 2009-06-10 |
US20100059118A1 (en) | 2010-03-11 |
DE112007001239T5 (de) | 2009-04-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE112007001239T8 (de) | Verfahren zur Herstellung von Silicium | |
DE602006010775D1 (de) | Verfahren zur Herstellung von Siliziumscheiben | |
DE602007013512D1 (de) | Verfahren zur kontinuierlichen Herstellung von Bauteilen | |
DE602007011843D1 (de) | Verfahren zur Herstellung von Gruppe-III-Nitridkristallen | |
DE602005015554D1 (de) | Verfahren zur herstellung von silicium | |
DE602006006237D1 (de) | Verfahren zur Herstellung von keramischen Heizern | |
DE602005009866D1 (de) | Verfahren zur herstellung von n-phenylpyrazol-1-carboxamiden | |
DE602005018601D1 (de) | Verfahren zur herstellung von 2-aminothiazol-5-aro | |
DE502006000138D1 (de) | Verfahren zur Herstellung von Triorganosiloxygruppen aufweisenden Organopolysiloxanen | |
DE502006006498D1 (de) | Verfahren zur Herstellung von Organopolysiloxanen | |
DE502005002059D1 (de) | Verfahren zur herstellung von polyetheralkoholen | |
DE602006010302D1 (de) | Verfahren zur Herstellung von 5-methyl-2-furfural | |
DE602005007734D1 (de) | Verfahren zur herstellung von telmisartan | |
DE602007009096D1 (de) | Verfahren zur herstellung von benzopyran-2-olderivaten | |
DE502007003700D1 (de) | Verfahren zur Herstellung von Glycerin | |
DE502006000932D1 (de) | Verfahren zur Herstellung von Organylhydrogensilanen | |
DE602006009562D1 (de) | Verfahren zur herstellung von ferrisuccinylcasein | |
DE602009000391D1 (de) | Vorrichtung zur Herstellung von polykristallinem Silicium | |
DE602006010709D1 (de) | Verfahren zur herstellung von hochreinem silicium | |
DE502007000129D1 (de) | Kontinuierliches Verfahren zur Herstellung von vernetzbaren Organopolysiloxanmassen | |
DE502006004187D1 (de) | Verfahren zur herstellung von diorganopolysiloxanen | |
DE112006000985A5 (de) | Verfahren zur Herstellung von Tetrahydropyranen aus Tetrahydropyran-3-onen | |
DE502007000875D1 (de) | Verfahren zur Herstellung von ß-Ketocarbonyl-funktionellen Organosiliciumverbindungen | |
DE602005004221D1 (de) | Verfahren zur Herstellung von Faserformkörpern | |
DE602007003135D1 (de) | Verfahren zur Herstellung von Xylylenediamin |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8696 | Reprint of defective front page | ||
R012 | Request for examination validly filed |
Effective date: 20140513 |
|
R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |