DE112005002260T8 - Hocheffiziente Gruppe-III-Nitrid-Siliciumcarbid-LED - Google Patents
Hocheffiziente Gruppe-III-Nitrid-Siliciumcarbid-LED Download PDFInfo
- Publication number
- DE112005002260T8 DE112005002260T8 DE200511002260 DE112005002260T DE112005002260T8 DE 112005002260 T8 DE112005002260 T8 DE 112005002260T8 DE 200511002260 DE200511002260 DE 200511002260 DE 112005002260 T DE112005002260 T DE 112005002260T DE 112005002260 T8 DE112005002260 T8 DE 112005002260T8
- Authority
- DE
- Germany
- Prior art keywords
- silicon carbide
- group iii
- iii nitride
- highly efficient
- nitride silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- -1 nitride silicon carbide Chemical class 0.000 title 1
- 229910010271 silicon carbide Inorganic materials 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/951,042 | 2004-09-22 | ||
| US10/951,042 US7259402B2 (en) | 2004-09-22 | 2004-09-22 | High efficiency group III nitride-silicon carbide light emitting diode |
| PCT/US2005/032896 WO2006036566A1 (en) | 2004-09-22 | 2005-09-15 | High efficiency group iii nitride-silicon carbide light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE112005002260T5 DE112005002260T5 (de) | 2007-09-27 |
| DE112005002260T8 true DE112005002260T8 (de) | 2009-01-22 |
Family
ID=35519874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE200511002260 Expired - Fee Related DE112005002260T8 (de) | 2004-09-22 | 2005-09-15 | Hocheffiziente Gruppe-III-Nitrid-Siliciumcarbid-LED |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7259402B2 (de) |
| KR (1) | KR20090103960A (de) |
| CN (2) | CN100530713C (de) |
| DE (1) | DE112005002260T8 (de) |
| TW (1) | TWI286394B (de) |
| WO (1) | WO2006036566A1 (de) |
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| DE112010003700T5 (de) * | 2009-09-18 | 2013-02-28 | Soraa, Inc. | Power-leuchtdiode und verfahren mit stromdichtebetrieb |
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| US10971612B2 (en) | 2019-06-13 | 2021-04-06 | Cree, Inc. | High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability |
| US10923585B2 (en) | 2019-06-13 | 2021-02-16 | Cree, Inc. | High electron mobility transistors having improved contact spacing and/or improved contact vias |
| US11769768B2 (en) | 2020-06-01 | 2023-09-26 | Wolfspeed, Inc. | Methods for pillar connection on frontside and passive device integration on backside of die |
| US12009417B2 (en) | 2021-05-20 | 2024-06-11 | Macom Technology Solutions Holdings, Inc. | High electron mobility transistors having improved performance |
| JP2024519864A (ja) | 2021-05-20 | 2024-05-21 | ウルフスピード インコーポレイテッド | 改善した性能を有する高電子移動度トランジスタを製造する方法 |
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-
2004
- 2004-09-22 US US10/951,042 patent/US7259402B2/en active Active
-
2005
- 2005-09-15 KR KR1020097017903A patent/KR20090103960A/ko not_active Application Discontinuation
- 2005-09-15 DE DE200511002260 patent/DE112005002260T8/de not_active Expired - Fee Related
- 2005-09-15 TW TW094131893A patent/TWI286394B/zh active
- 2005-09-15 WO PCT/US2005/032896 patent/WO2006036566A1/en active Application Filing
- 2005-09-15 CN CNB2005800320278A patent/CN100530713C/zh active Active
- 2005-09-15 CN CN2005800320282A patent/CN101027784B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US7259402B2 (en) | 2007-08-21 |
| CN101027783A (zh) | 2007-08-29 |
| DE112005002260T5 (de) | 2007-09-27 |
| KR20090103960A (ko) | 2009-10-01 |
| CN101027784A (zh) | 2007-08-29 |
| TWI286394B (en) | 2007-09-01 |
| WO2006036566A1 (en) | 2006-04-06 |
| CN100530713C (zh) | 2009-08-19 |
| TW200627674A (en) | 2006-08-01 |
| CN101027784B (zh) | 2013-08-07 |
| US20060060877A1 (en) | 2006-03-23 |
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| UA7777S (uk) | Плитка керамічна |
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Inventor name: BHARATHAN, JAYESH, CARY, N.C., US Inventor name: EDMOND, JOHN ADAM, CARY, N.C., US Inventor name: SLATER JUN., DAVID BEARDSLEY, DURHAM, N.C., US |
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