DE10347737A1 - Optoelectronic structural element with a semiconductor body, including a substrate, a layer system deposited on the substrate and a metallized carrier useful in thin film, Flip-Chip and semiconductor technology - Google Patents

Optoelectronic structural element with a semiconductor body, including a substrate, a layer system deposited on the substrate and a metallized carrier useful in thin film, Flip-Chip and semiconductor technology Download PDF

Info

Publication number
DE10347737A1
DE10347737A1 DE10347737A DE10347737A DE10347737A1 DE 10347737 A1 DE10347737 A1 DE 10347737A1 DE 10347737 A DE10347737 A DE 10347737A DE 10347737 A DE10347737 A DE 10347737A DE 10347737 A1 DE10347737 A1 DE 10347737A1
Authority
DE
Germany
Prior art keywords
substrate
structural element
layer system
flip
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE10347737A
Other languages
German (de)
Inventor
Matthias Winter
Stefan Gruber
Georg Bogner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE10347737A priority Critical patent/DE10347737A1/en
Priority to EP04022979A priority patent/EP1521312A3/en
Priority to US10/952,138 priority patent/US20050110010A1/en
Priority to JP2004288291A priority patent/JP2005109506A/en
Publication of DE10347737A1 publication Critical patent/DE10347737A1/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0231—Stems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)

Abstract

Optoelectronic structural element with a semiconductor body (SCB) (1), including a substrate (2) and a layer system (3) deposited on the substrate, where the SCB is fixed to a carrier (4) with the main surface opposite the substrate by a solder bond (7) and the carrier (4) is metallized with silver-free metal on the side opposite the SCB.
DE10347737A 2003-09-30 2003-10-14 Optoelectronic structural element with a semiconductor body, including a substrate, a layer system deposited on the substrate and a metallized carrier useful in thin film, Flip-Chip and semiconductor technology Ceased DE10347737A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE10347737A DE10347737A1 (en) 2003-09-30 2003-10-14 Optoelectronic structural element with a semiconductor body, including a substrate, a layer system deposited on the substrate and a metallized carrier useful in thin film, Flip-Chip and semiconductor technology
EP04022979A EP1521312A3 (en) 2003-09-30 2004-09-27 Optoelectronic device having a metallised carrier
US10/952,138 US20050110010A1 (en) 2003-09-30 2004-09-28 Opto-electronic element with a metallized carrier
JP2004288291A JP2005109506A (en) 2003-09-30 2004-09-30 Photoelectric element having metallized support body

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10345415 2003-09-30
DE10347737A DE10347737A1 (en) 2003-09-30 2003-10-14 Optoelectronic structural element with a semiconductor body, including a substrate, a layer system deposited on the substrate and a metallized carrier useful in thin film, Flip-Chip and semiconductor technology

Publications (1)

Publication Number Publication Date
DE10347737A1 true DE10347737A1 (en) 2005-05-04

Family

ID=34399081

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10347737A Ceased DE10347737A1 (en) 2003-09-30 2003-10-14 Optoelectronic structural element with a semiconductor body, including a substrate, a layer system deposited on the substrate and a metallized carrier useful in thin film, Flip-Chip and semiconductor technology

Country Status (1)

Country Link
DE (1) DE10347737A1 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19607323A1 (en) * 1995-08-11 1997-02-13 Samsung Aerospace Ind Method of manufacturing a substrate for a semiconductor package
WO2001047039A1 (en) * 1999-12-22 2001-06-28 Lumileds Lighting, U.S., Llc Method of making a iii-nitride light-emitting device with increased light generating capability
DE10026255A1 (en) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor element has a semiconductor body formed by a stack of different semiconductor layers based on gallium nitride
US20010040239A1 (en) * 1999-12-08 2001-11-15 Shinji Isokawa Chip-type semiconductor light-emitting device
WO2002084749A2 (en) * 2001-04-10 2002-10-24 Osram Opto Semiconductors Gmbh Conductor frame and housing for a radiation-emitting component, radiation emitting component and method for producing the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19607323A1 (en) * 1995-08-11 1997-02-13 Samsung Aerospace Ind Method of manufacturing a substrate for a semiconductor package
US20010040239A1 (en) * 1999-12-08 2001-11-15 Shinji Isokawa Chip-type semiconductor light-emitting device
WO2001047039A1 (en) * 1999-12-22 2001-06-28 Lumileds Lighting, U.S., Llc Method of making a iii-nitride light-emitting device with increased light generating capability
DE10026255A1 (en) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor element has a semiconductor body formed by a stack of different semiconductor layers based on gallium nitride
WO2002084749A2 (en) * 2001-04-10 2002-10-24 Osram Opto Semiconductors Gmbh Conductor frame and housing for a radiation-emitting component, radiation emitting component and method for producing the same

Similar Documents

Publication Publication Date Title
WO2008149322A3 (en) Mount for a semiconductor light emitting device
TWI264121B (en) A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device
TW200620704A (en) Nitride-based compound semiconductor light emitting device
TW200729543A (en) Light emitting device and method of forming the same
AU2003285175A1 (en) Drag reduction multilayer film and method of use
EP1873817A3 (en) Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same
WO2005008791A3 (en) Semiconductor light emitting device, method of manufacturing the same, and lighting apparatus and display apparatus using the same
TW200502089A (en) Thermal interconnect and interface systems, methods of production and uses thereof
TW200701375A (en) Metal-ceramic composite substrate and manufacturing method thereof
MY141785A (en) Manufacturing method of semiconductor device
TW200512857A (en) Semiconductor device and method for fabricating the same
SG163530A1 (en) Copper wire bonding on organic solderability preservative materials
TWI266435B (en) Nitride-based compound semiconductor light emitting device and fabricating method thereof
DE68911702D1 (en) Compound substrate semiconductor device made of two semiconductor substrates in close contact.
TW200620644A (en) Semiconductor device, semiconductor module, and manufacturing method of semiconductor device
WO2002007233A3 (en) Group iii nitride compound semiconductor device
DE602005022588D1 (en) COMBINING A SUBSTRATE WITH AN ELECTRICALLY CONDUCTIVE FILM WITH A SECOND SUBSTRATE THROUGH MOLECULAR ADHESION
WO2009092799A3 (en) Object comprising a graphics element transferred onto a support wafer and method of producing such an object
TW200746330A (en) Microelectronic assembly with back side metallization and method for forming the same
WO2004059728A3 (en) Method of fabricating an integrated circuit and semiconductor chip
EP1310991A3 (en) Composite die mounting foil for chip-scale semiconductor packages
TW200701503A (en) Light-emitting diode and method for manufacturing the same
MY151621A (en) Coating for enhancing adhesion of molding compound to semiconductor devices
TW200729441A (en) Semiconductor devices and fabrication method thereof
CA2509912A1 (en) Junction substrate and method of bonding substrates together

Legal Events

Date Code Title Description
R012 Request for examination validly filed
OP8 Request for examination as to paragraph 44 patent law
R016 Response to examination communication
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0033000000

Ipc: H01L0033620000

R002 Refusal decision in examination/registration proceedings
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0033000000

Ipc: H01L0033620000

Effective date: 20130408

R003 Refusal decision now final

Effective date: 20130517