DE10344612A1 - Use of a mixture of a fluorine-containing and chlorine-containing gas for cleaning atomic layer deposition reactors used in semiconductor technology - Google Patents

Use of a mixture of a fluorine-containing and chlorine-containing gas for cleaning atomic layer deposition reactors used in semiconductor technology Download PDF

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Publication number
DE10344612A1
DE10344612A1 DE10344612A DE10344612A DE10344612A1 DE 10344612 A1 DE10344612 A1 DE 10344612A1 DE 10344612 A DE10344612 A DE 10344612A DE 10344612 A DE10344612 A DE 10344612A DE 10344612 A1 DE10344612 A1 DE 10344612A1
Authority
DE
Germany
Prior art keywords
chlorine
fluorine
cleaning
mixture
atomic layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE10344612A
Other languages
German (de)
Inventor
Bernd Hintze
Mark Wodarz
Hubert Winzig
Alexander Gschwandtner
Oliver Schedlbauer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qimonda AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to DE10344612A priority Critical patent/DE10344612A1/en
Publication of DE10344612A1 publication Critical patent/DE10344612A1/en
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD

Abstract

Use of a mixture of a fluorine-containing and chlorine-containing gas for cleaning atomic layer deposition reactors in which the reaction mixture produced is fed into the reaction chamber to remove residues in the reactor chamber.
DE10344612A 2003-09-25 2003-09-25 Use of a mixture of a fluorine-containing and chlorine-containing gas for cleaning atomic layer deposition reactors used in semiconductor technology Withdrawn DE10344612A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE10344612A DE10344612A1 (en) 2003-09-25 2003-09-25 Use of a mixture of a fluorine-containing and chlorine-containing gas for cleaning atomic layer deposition reactors used in semiconductor technology

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10344612A DE10344612A1 (en) 2003-09-25 2003-09-25 Use of a mixture of a fluorine-containing and chlorine-containing gas for cleaning atomic layer deposition reactors used in semiconductor technology

Publications (1)

Publication Number Publication Date
DE10344612A1 true DE10344612A1 (en) 2005-05-04

Family

ID=34398960

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10344612A Withdrawn DE10344612A1 (en) 2003-09-25 2003-09-25 Use of a mixture of a fluorine-containing and chlorine-containing gas for cleaning atomic layer deposition reactors used in semiconductor technology

Country Status (1)

Country Link
DE (1) DE10344612A1 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5202291A (en) * 1990-09-26 1993-04-13 Intel Corporation High CF4 flow-reactive ion etch for aluminum patterning
US5356478A (en) * 1992-06-22 1994-10-18 Lam Research Corporation Plasma cleaning method for removing residues in a plasma treatment chamber
EP0697467A1 (en) * 1994-07-21 1996-02-21 Applied Materials, Inc. Method and apparatus for cleaning a deposition chamber
DE69424099T2 (en) * 1993-07-30 2000-09-14 Applied Materials Inc Low temperature cleaning of cold wall CVD devices
DE69523488T2 (en) * 1994-01-19 2002-04-11 Tokyo Electron America Inc Method and device for igniting plasmas in a process module

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5202291A (en) * 1990-09-26 1993-04-13 Intel Corporation High CF4 flow-reactive ion etch for aluminum patterning
US5356478A (en) * 1992-06-22 1994-10-18 Lam Research Corporation Plasma cleaning method for removing residues in a plasma treatment chamber
DE69424099T2 (en) * 1993-07-30 2000-09-14 Applied Materials Inc Low temperature cleaning of cold wall CVD devices
DE69523488T2 (en) * 1994-01-19 2002-04-11 Tokyo Electron America Inc Method and device for igniting plasmas in a process module
EP0697467A1 (en) * 1994-07-21 1996-02-21 Applied Materials, Inc. Method and apparatus for cleaning a deposition chamber

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8127 New person/name/address of the applicant

Owner name: QIMONDA AG, 81739 MUENCHEN, DE

8139 Disposal/non-payment of the annual fee