DE10320186B4 - Thermal compound and process for its application and protection - Google Patents
Thermal compound and process for its application and protection Download PDFInfo
- Publication number
- DE10320186B4 DE10320186B4 DE2003120186 DE10320186A DE10320186B4 DE 10320186 B4 DE10320186 B4 DE 10320186B4 DE 2003120186 DE2003120186 DE 2003120186 DE 10320186 A DE10320186 A DE 10320186A DE 10320186 B4 DE10320186 B4 DE 10320186B4
- Authority
- DE
- Germany
- Prior art keywords
- thermal
- filler
- thermal compound
- compound
- paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
- C09K5/08—Materials not undergoing a change of physical state when used
- C09K5/14—Solid materials, e.g. powdery or granular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29499—Shape or distribution of the fillers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Combustion & Propulsion (AREA)
- Thermal Sciences (AREA)
- Organic Chemistry (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Wärmeleitpaste
(20) bestehend aus mindestens einem Basisstoff (22) und einem Füllstoff
(24, 26), wobei
der Basisstoff (22) eine dynamische Viskosität zwischen
25 und 500 mPa s aufweist aus Dimethylpolysiloxan oder einem perfluoriertem
Polyetheröl
oder einer Mischung der beiden im Verhältnis von 40 : 60 bis 60 :
40 besteht,
der Füllstoff
(24, 26) aus einer Mischung aus Silber (24) und Graphit (26) mit
einem Verhältnis
von 90 : 10 bis 40 : 60 besteht,
die Füllstoffe (24, 26) in Plättchenform
vorliegen und eine Partikelgröße kleiner
als 20 μm
aufweisen,
die Wärmeleitpaste
einen Füllgrad
des Füllstoffs
(24, 26) zwischen 20% und 70% aufweist.Thermal paste (20) consisting of at least one base material (22) and a filler (24, 26), wherein
the base material (22) has a dynamic viscosity between 25 and 500 mPa s of dimethylpolysiloxane or a perfluorinated polyether oil or a mixture of the two in the ratio of 40: 60 to 60: 40,
the filler (24, 26) consists of a mixture of silver (24) and graphite (26) with a ratio of 90:10 to 40:60,
the fillers (24, 26) are in platelet form and have a particle size smaller than 20 μm,
the thermal compound has a degree of filling of the filler (24, 26) between 20% and 70%.
Description
Die Erfindung beschreibt eine Wärmeleitpaste zum Auftrag auf ein zu kühlendes Bauteil um eine Wärme leitende Verbindung zwischen diesem und einem Kühlbauteil herzustellen.The Invention describes a thermal grease to the order on a to be cooled Component to a heat make conductive connection between this and a cooling component.
Beispielhaft werden derartige Wärmeleitpasten auf dem Gebiet der Leistungselektronik eingesetzt um bekannte Leistungshalbleitermodule thermisch leitend mit einem Kühlkörper zu verbinden. Der Wirkungsgrad einer derartigen thermisch leitenden Verbindung wird bestimmt durch die Wärmeleitfähigkeit der Wärmeleitpaste und durch deren Schichtdicke. Bekannt sind Schichtdicken bei den genannten Anwendungen von mehr als 100 μm. Eine Erhöhung der Wärmeleitfähigkeit und/oder eine Reduzierung der Schichtdicke führen zu einer verbesserten Wärmeabfuhr aus dem Leistungshalbleitermodul und damit direkt zu einer Verbesserung der Leistungsfähigkeit.exemplary become such thermal compounds used in the field of power electronics to known power semiconductor modules thermally conductive with a heat sink to connect. The efficiency of such a thermally conductive Connection is determined by the thermal conductivity of the thermal compound and by their layer thickness. Layer thicknesses are known in the mentioned applications of more than 100 microns. An increase in thermal conductivity and / or a reduction the layer thickness lead for improved heat dissipation from the power semiconductor module and thus directly to an improvement the efficiency.
Eine bekannte und beispielhaft auf dem Gebiet der Leistungselektronik vielfach eingesetzte Wärmeleitpaste ist die Silikonpaste Wacker® P12. Diese weist eine Wärmeleitfähigkeit von ca. 0,8 W·K–1·m–1 sowie einen spezifischen Widerstand von 1013 Ω·m auf. Diese sowie vergleichbare Wärmeleitpasten bilden den Ausgangspunkt dieser Erfindung.A well-known and widely used in the field of power electronics thermal grease is the silicone paste Wacker ® P12. This has a thermal conductivity of about 0.8 W · K -1 · m -1 and a resistivity of 10 13 Ω · m. These and comparable thermal compounds form the starting point of this invention.
Nachteilig in der Verwendung von Wärmeleitpasten ist, dass diese durch ihre pastöse Konsistenz nach dem Auftrag auf einem Bauelemente empfindlich gegen Verunreinigungen und in noch stärkerem Maße gegen äußere Einflüsse, speziell auf die Schichtdicke oder deren Homogenität, sind.adversely in the use of thermal compounds is that through its pasty Consistency after the order on a component sensitive to Impurities and in even stronger Measures against external influences, especially on the layer thickness or their homogeneity, are.
Beispielhaft
offenbart die
Aus
der
Der vorliegenden Erfindung liegt die erste Aufgabe zu Grunde eine Wärmeleitpaste vorzustellen, die eine Wärmeleitfähigkeit von mehr als 2 W K–1 m–1 aufweist und in Schichtdicken von weniger als 80 μm auftragbar ist, sowie die zweite Aufgabe eine Wärmeleitpaste derart auf ein zu kühlendes Bauteil aufzubringen, dass der Auftrag homogen ist, nur eine minimal nötige Schichtdicke aufweist und diesen Auftrag bis zur Montage des Bauteils auf einem Kühlkörper gegen äußere Einwirkungen geschützt ist.The present invention is based on the first object to present a thermal paste, which has a thermal conductivity of more than 2 WK -1 m -1 and can be applied in layer thicknesses of less than 80 microns, and the second task, a thermal grease on a component to be cooled apply that the order is homogeneous, has only a minimum necessary layer thickness and this order is protected until the assembly of the component on a heat sink against external influences.
Diese Aufgaben werden gelöst durch eine Wärmeleitpaste nach dem Anspruch 1 sowie ein Verfahren nach Anspruch 2, spezielle Ausgestaltungen finden sich in den Unteransprüchen.These Tasks are solved through a thermal grease according to claim 1 and a method according to claim 2, special Embodiments can be found in the subclaims.
Der Grundgedanke der Erfindung geht aus von bekannten elektrisch isolierenden Wärmeleitpasten mit einem Wärmewiderstand von ca. 1 W K–1 m–1. Eine Erhöhung dieses Wärmewiderstandes wird erreicht, indem mindestens einer der Füllstoffe ein hohe Wärmeleitfähigkeit aufweist. Hierfür sind vornehmlich metallische Werkstoffe geeignet. Mit dem Einsatz metallischer Füllstoffe gehen einerseits eine Erniedrigung des Wärmewiderstands und andererseits eine Erniedrigung des spezifischen Widerstandes einher. Die Größe der einzelnen Partikel dieses Füllstoffes wird kleiner als 20 μm gewählt, wodurch eine Schichtdicke einer aufgetragenen Schicht von weniger als 80 μm erzielbar ist. Vorteilhafterweise liegt der Füllstoff in Plättchenform vor, womit Schichtdicken bis zu 10 μm erreichbar sind.The basic idea of the invention is based on known electrically insulating heat-conducting pastes with a thermal resistance of about 1 WK -1 m -1 . An increase in this thermal resistance is achieved by having at least one of the fillers a high thermal conductivity. For this purpose, primarily metallic materials are suitable. On the one hand, the use of metallic fillers results in a lowering of the thermal resistance and, on the other hand, a reduction in the specific resistance. The size of the individual particles of this filler is chosen smaller than 20 microns, whereby a layer thickness of an applied layer of less than 80 microns can be achieved. Advantageously, the filler is in platelet form, whereby layer thicknesses up to 10 microns can be achieved.
Zum homogenen Auftrag einer Wärmeleitpaste auf beliebigen im Wesentlichen planen Oberflächen mit Schichtdicken zwischen 10 und 80 μm ist das bekannte Siebdruckverfahren geeignet. Um diese Schichten anschließend, beispielhaft während des Transports gegen Verunreinigung und andere äußere Einwirkungen auf die Schichtdicke oder deren Homogenität, zu schützen ist die Wärmeleitpaste mit einem Kunststoffformteil überdeckt. Dieses Kunststoffformteil wird derart auf dem mit Wärmeleitpaste versehenen Bauteil angeordnet, dass nur maximal 8% der Oberfläche der Wärmeleitpaste mit diesem Kunststoffformteil in Kontakt sind. Der übrige Teil der Oberfläche wird durch das Kunststoffformteil überdeckt aber nicht berührt.To the homogeneous application of a thermal paste on any substantially planar surfaces with layer thicknesses between 10 and 80 μm the known screen printing method is suitable. To these layers then, by way of example while Transport against contamination and other external effects on the layer thickness or their homogeneity, to protect is the thermal grease covered with a plastic molding. This plastic molding is so on with thermal grease arranged component that only a maximum of 8% of the surface of the Thermal Compounds are in contact with this plastic molding. The remaining part the surface is covered by the plastic molding but not touched.
Die
Erfindung wird anhand von Ausführungsbeispielen
in Verbindung mit den
Die
erfindungsgemäße Wärmeleitpaste
(
Beide
Füllstoffe
(
Unter
dem Füllgrad
wird das Volumenverhältnis
zwischen Füllstoff
(
Die
Wärmeleitpaste
(
Eine vorteilhafte Alternative zur genannten Ausgestaltung des Kunststoffformteils ist eine Ausgestaltung als einseitig offene Gitterstrukturfolie. Derartige Gitterstrukturfolien bestehen aus einen Folienschicht von wenigen 10 μm Dicke und einer darauf aufgebrachten beispielhaft wabenartig ausgestalteten Gitterstruktur mit einer Höhe von mehr als 100 μm. Zum Schutz der Wärmeleitpastenschicht wird diese Gitterstrukturfolie mit der offenen Seite auf die Wärmeleitpastenschicht aufgebracht. Da die Gitterstruktur eine Höhe von mehr als 100 μm aufweist, überdeckt die Folienschicht die Wärmeleitpaste ohne sie zu berühren. Einzig die Stege der Gitterstruktur liegen auf maximal 8% der Oberfläche der Wärmeleitpaste auf bzw. durchdringen diese zumindest teilweise.A advantageous alternative to the mentioned embodiment of the plastic molding is an embodiment as a lattice structure film open on one side. Such lattice structure films consist of a film layer of a few 10 microns Thickness and an example applied honeycomb-like Lattice structure with a height of more than 100 μm. To protect the thermal paste layer This grating structure film with the open side on the Wärmeleitpastenschicht applied. Since the grid structure has a height of more than 100 microns, covered the foil layer the thermal paste without touching her. Only the webs of the lattice structure are at a maximum of 8% of the surface of the Thermal Compounds on or penetrate these at least partially.
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2003120186 DE10320186B4 (en) | 2003-05-07 | 2003-05-07 | Thermal compound and process for its application and protection |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2003120186 DE10320186B4 (en) | 2003-05-07 | 2003-05-07 | Thermal compound and process for its application and protection |
Publications (2)
Publication Number | Publication Date |
---|---|
DE10320186A1 DE10320186A1 (en) | 2004-12-02 |
DE10320186B4 true DE10320186B4 (en) | 2008-02-14 |
Family
ID=33394185
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE2003120186 Expired - Lifetime DE10320186B4 (en) | 2003-05-07 | 2003-05-07 | Thermal compound and process for its application and protection |
Country Status (1)
Country | Link |
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DE (1) | DE10320186B4 (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10358843B3 (en) * | 2003-12-16 | 2005-03-24 | Semikron Elektronik Gmbh | Packaging container for power semiconducting modules has cover surface with support(s) that narrows as it extends into molded body and into opening in module to prevent contact between module and covering surface |
DE102007003824B4 (en) | 2007-01-25 | 2010-10-28 | Infineon Technologies Ag | Method for applying a thermal paste |
DE202009010154U1 (en) | 2009-07-25 | 2009-10-01 | Narva Lichtquellen Gmbh + Co. Kg | Paste for transferring heat |
DE102013207043B4 (en) * | 2013-04-18 | 2020-02-27 | Infineon Technologies Ag | Semiconductor module arrangement and method for mounting a semiconductor module on a heat sink |
DE102016015994B3 (en) | 2015-02-16 | 2022-12-01 | Mitsubishi Electric Corporation | semiconductor device |
DE102019135381A1 (en) | 2019-12-20 | 2021-06-24 | Audi Ag | Method for manufacturing a traction battery of a motor vehicle and a corresponding manufacturing device |
DE102019135382A1 (en) | 2019-12-20 | 2021-06-24 | Audi Ag | Method for manufacturing a traction battery of a motor vehicle and a corresponding manufacturing device |
DE102020108097A1 (en) | 2020-03-24 | 2021-09-30 | Semikron Elektronik Gmbh & Co. Kg | Method and stencil for printing paste on a cooling surface of a heat sink |
DE102020108271A1 (en) | 2020-03-25 | 2021-09-30 | Audi Aktiengesellschaft | Method for manufacturing a traction battery of a motor vehicle and a corresponding manufacturing device |
DE102020108537B4 (en) | 2020-03-27 | 2023-12-21 | Audi Aktiengesellschaft | Method for producing a traction battery of a motor vehicle and corresponding manufacturing device |
DE102022118264A1 (en) | 2022-07-21 | 2024-02-01 | Infineon Technologies Ag | Radio frequency device with radio frequency absorbing features |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6306957B1 (en) * | 1999-03-11 | 2001-10-23 | Shin-Etsu Chemical Co., Ltd. | Thermal conductive silicone rubber compositions and making method |
US6515061B1 (en) * | 1995-06-07 | 2003-02-04 | International Business Machines Corporation | Polyester dispersants for high thermal conductivity paste |
-
2003
- 2003-05-07 DE DE2003120186 patent/DE10320186B4/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6515061B1 (en) * | 1995-06-07 | 2003-02-04 | International Business Machines Corporation | Polyester dispersants for high thermal conductivity paste |
US6306957B1 (en) * | 1999-03-11 | 2001-10-23 | Shin-Etsu Chemical Co., Ltd. | Thermal conductive silicone rubber compositions and making method |
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Publication number | Publication date |
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DE10320186A1 (en) | 2004-12-02 |
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OP8 | Request for examination as to paragraph 44 patent law | ||
8127 | New person/name/address of the applicant |
Owner name: SEMIKRON ELEKTRONIK GMBH & CO. KG, 90431 NUERNBERG, |
|
8364 | No opposition during term of opposition | ||
R071 | Expiry of right |