DE102023134379A1 - LED and turbidity sensor with such a LED - Google Patents
LED and turbidity sensor with such a LED Download PDFInfo
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- 230000005855 radiation Effects 0.000 claims abstract description 49
- 230000035515 penetration Effects 0.000 claims abstract description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 230000003679 aging effect Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
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- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/49—Scattering, i.e. diffuse reflection within a body or fluid
- G01N21/53—Scattering, i.e. diffuse reflection within a body or fluid within a flowing fluid, e.g. smoke
- G01N21/534—Scattering, i.e. diffuse reflection within a body or fluid within a flowing fluid, e.g. smoke by measuring transmission alone, i.e. determining opacity
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- G01N21/84—Systems specially adapted for particular applications
- G01N21/85—Investigating moving fluids or granular solids
- G01N21/8507—Probe photometers, i.e. with optical measuring part dipped into fluid sample
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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Abstract
Die Erfindung betrifft eine Leuchtdiode (5a), insbesondere für einen Trübungssensor, umfassend einen LED-Chip (5) als Strahlungssender, wobei der LED-Chip (5) von einem Sockel (13), einem Gehäuse und einer Sammellinse hermetisch umschlossen ist, wobei neben dem LED-Chip (5) eine Photodiode (8) als Strahlungsempfänger angeordnet ist, der als Referenzempfänger die Strahlungsintensität des LED-Chips (5) erfasst,wobei der LED-Chip (5) und die Photodiode (8) von einem Blendenelement (10) umschlossen sind, welches eine Durchbohrung (11) zur Weiterleitung der vom LED-Chip (5) ausgesendeten Strahlen in die Umgebung aufweist, im Übrigen jedoch eine Reflexionsebene bildet, durch die die Strahlen vom LED-Chip (5) zur Photodiode (8) gelangen und gleichzeitig das Eindringen von Streulicht aus der Umgebung begrenzt wird. Außerdem betrifft die Erfindung einen Trübungssensor mit einer solchen Leuchtdiode.The invention relates to a light-emitting diode (5a), in particular for a turbidity sensor, comprising an LED chip (5) as a radiation transmitter, wherein the LED chip (5) is hermetically enclosed by a base (13), a housing and a collecting lens, wherein a photodiode (8) is arranged next to the LED chip (5) as a radiation receiver, which detects the radiation intensity of the LED chip (5) as a reference receiver, wherein the LED chip (5) and the photodiode (8) are enclosed by a diaphragm element (10) which has a through hole (11) for transmitting the rays emitted by the LED chip (5) into the environment, but otherwise forms a reflection plane through which the rays from the LED chip (5) reach the photodiode (8) and at the same time the penetration of scattered light from the environment is limited. The invention also relates to a turbidity sensor with such a light-emitting diode.
Description
Die Erfindung betrifft eine Leuchtdiode sowie einen Trübungssensor mit einer solchen Leuchtdiode.The invention relates to a light-emitting diode and a turbidity sensor with such a light-emitting diode.
Eine Leuchtdiode, kurz LED genannt, ist nach allgemeiner Definition ein HalbleiterBauelement, das Licht ausstrahlt, wenn elektrischer Strom in Durchlassrichtung fließt. Sie umfasst im Wesentlichen einen Halbleiterkristall, der in Form eines LED-Chips den eigentlichen Strahlungssender bildet und zumeist auf einer Trägerplatte angeordnet ist. Mittels Bonddrähte erfolgt der elektrische Anschluss des LED-Chips. Umhüllt ist diese Anordnung von einem lichtbündelnden, transparenten Gehäuse oder einer Hülse mit separater Sammellinse.A light-emitting diode, or LED for short, is generally defined as a semiconductor component that emits light when an electric current flows in the forward direction. It essentially comprises a semiconductor crystal, which forms the actual radiation transmitter in the form of an LED chip and is usually arranged on a carrier plate. The LED chip is electrically connected using bonding wires. This arrangement is encased in a light-bundling, transparent housing or a sleeve with a separate collecting lens.
Trübungssensoren sind dafür vorgesehen, ein Medium, insbesondere eine Flüssigkeit, hinsichtlich der optischen Eigenschaften zu analysieren. Im Mittelpunkt steht dabei die Bestimmung des Anteils an Schwebstoffen. Eine Lichtquelle, typischerweise eine Leuchtdiode, sendet Licht, insbesondere infrarotes Licht, durch das Medium hindurch zu einem Strahlungsempfänger. Durch Schwebstoffe im Medium wird das Licht aufgrund von Streulichtbildung und Absorption gedämpft, so dass die vom Strahlungsempfänger empfangene Strahlungsintensität ein Maß für die Trübung des Mediums ist.Turbidity sensors are designed to analyze a medium, particularly a liquid, in terms of its optical properties. The focus is on determining the proportion of suspended matter. A light source, typically a light-emitting diode, sends light, particularly infrared light, through the medium to a radiation receiver. Suspended matter in the medium dampens the light due to scattered light formation and absorption, so that the radiation intensity received by the radiation receiver is a measure of the turbidity of the medium.
Die Lichtquelle unterliegt naturgemäß einem gewissen Alterungseffekt. Um sicherzustellen, dass eine beim Strahlungsempfänger ankommende reduzierte Strahlungsintensität ausschließlich durch Trübungseigenschaften des Mediums hervorgerufen wurden und nicht auch Folge eines Alterungseffekts ist, ist es aus dem Stand der Technik bekannt, bspw. aus der
Problematisch ist dabei, dass der Referenzempfänger auch Störlichteinflüssen unterliegen kann, was dann die Aussagekraft bezüglich der Alterungseffekte der Lichtquelle mindern würde. Außerdem erhöht sich durch das zusätzliche Bauteil zwangsläufig der Platzbedarf.The problem is that the reference receiver can also be subject to interference from stray light, which would then reduce the information it provides regarding the aging effects of the light source. In addition, the additional component inevitably increases the space required.
Aufgabe der Erfindung ist es, die Strahlungsintensität der Lichtquelle durch einen Referenzempfänger auf sehr kompakte und platzsparende Weise überwachen zu lassen und diesen vor Störlichteinflüssen weitgehend zu schützen.The object of the invention is to have the radiation intensity of the light source monitored by a reference receiver in a very compact and space-saving manner and to protect it largely from the influence of disturbing light.
Die Aufgabe wird erfindungsgemäß durch eine Leuchtdiode mit den Merkmalen des Anspruchs 1 sowie durch einen Trübungssensor mit den Merkmalen des Anspruchs 2 gelöst. Vorteilhafte Ausgestaltungen der Erfindung sind in den Unteransprüchen angegeben.The object is achieved according to the invention by a light-emitting diode with the features of
Zunächst umfasst die LED einen LED-Chip als Strahlungssender, der von einem Sockel, einem Gehäuse und einer Sammellinse hermetisch umschlossen ist. Erfindungsgemäß ist neben dem LED-Chip eine Photodiode als Strahlungsempfänger angeordnet ist, der als Referenzempfänger die Strahlungsintensität des LED-Chips erfasst. Beides, der LED-Chip und die Photodiode, sind von einem Blendenelement umschlossen, welches eine Durchbohrung zur Weiterleitung der vom LED-Chip ausgesendeten Strahlen in die Umgebung aufweist, im Übrigen jedoch eine Reflexionsebene bildet, durch die die Strahlen vom LED-Chip zur Photodiode gelangen und gleichzeitig das Eindringen von Streulicht aus der Umgebung begrenzt wird.Firstly, the LED comprises an LED chip as a radiation transmitter, which is hermetically enclosed by a base, a housing and a collecting lens. According to the invention, a photodiode is arranged next to the LED chip as a radiation receiver, which detects the radiation intensity of the LED chip as a reference receiver. Both the LED chip and the photodiode are enclosed by a diaphragm element, which has a hole for transmitting the rays emitted by the LED chip into the environment, but otherwise forms a reflection plane through which the rays pass from the LED chip to the photodiode and at the same time limits the penetration of scattered light from the environment.
Kern der Erfindung ist also, den Referenzempfänger nunmehr innerhalb der Lichtquelle, d.h. der Leuchtdiode, anzuordnen und somit eine sehr kompakte und extrem platzsparende Bauweise zu realisieren. Gleichzeitig wird durch das Blendenelement das Eindringen von Streulicht aus dem Medium begrenzt, so dass sichergestellt wird, dass der Referenzempfänger im Wesentlichen nur die Strahlung des Strahlungssenders empfängt und somit eine verlässliche Aussage über die jeweils aktuelle Strahlungsintensität des Strahlungssenders bzw. etwaige Alterungseffekte des Strahlungssenders möglich ist. Zudem ist ein derartiger Aufbau auch hermetisch dicht, so dass Feuchtigkeit, die bspw. durch Kondensation entstehen kann, auf den LED-Chip, den Referenzempfänger und die sonstigen Komponenten innerhalb der LED keinerlei Einfluss hat.The core of the invention is therefore to arrange the reference receiver within the light source, i.e. the light-emitting diode, and thus to achieve a very compact and extremely space-saving design. At the same time, the aperture element limits the penetration of scattered light from the medium, ensuring that the reference receiver essentially only receives the radiation from the radiation transmitter, thus making it possible to make a reliable statement about the current radiation intensity of the radiation transmitter or any aging effects of the radiation transmitter. In addition, such a structure is also hermetically sealed, so that moisture, which can arise, for example, through condensation, has no effect on the LED chip, the reference receiver and the other components within the LED.
Ein zweiter Aspekt betrifft einen Trübungssensor, bei dem die Lichtquelle bzw. die Strahlungssendereinheit als eine solche erfindungsgemäße Leichtdiode ausgeführt ist. A second aspect relates to a turbidity sensor in which the light source or the radiation transmitter unit is designed as such a light diode according to the invention.
Vorteilhafterweise ist der Referenzempfänger als Photodiode ausgebildet. Das Blendenelement besteht vorzugsweise aus einem keramischen Material.The reference receiver is advantageously designed as a photodiode. The aperture element is preferably made of a ceramic material.
Nachfolgend wird die Erfindung anhand von Ausführungsbeispielen unter Bezugnahme auf die Zeichnungen näher erläutert.The invention is explained in more detail below using embodiments with reference to the drawings.
Es zeigen schematisch:
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1 einen erfindungsgemäßen Trübungssensor; -
2 ein Schnittbild einer Sensorspitze des erfindungsgemäßen Trübungssensors und -
3 eine erfindungsgemäße Leichtdiode im Schnittbild.
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1 a turbidity sensor according to the invention; -
2 a sectional view of a sensor tip of the turbidity sensor according to the invention and -
3 a light-emitting diode according to the invention in a cross-sectional view.
Bei der nachfolgenden Beschreibung der bevorzugten Ausführungsformen bezeichnen gleiche Bezugszeichen gleiche oder vergleichbare Komponenten.In the following description of the preferred embodiments, like reference numerals designate like or comparable components.
In
Der Trübungssensor ist vorliegend als sogenanntes Transmittergerät dargestellt, welches keinerlei Anzeige- oder Bedieneinheit aufweist und lediglich über einen Steckeranschluss 3 ein dem Messergebnis entsprechendes analoges Spannungs- oder Stromsignal ausgibt, das einer übergeordneten Steuereinheit, bspw. einer SPS zur weiteren Verarbeitung und Auswertung zur Verfügung gestellt wird.The turbidity sensor is shown here as a so-called transmitter device, which has no display or operating unit and only outputs an analog voltage or current signal corresponding to the measurement result via a
In
Die Leiterplatte 16 und damit auch der LED-Chip 5 sowie der Referenzempfänger 8 sind von einem Blendenelement 10 überdeckt. Dieses Blendenelement 10 weist eine Durchbohrung 11 auf, durch das die vom Strahlungssender 5 ausgesendeten Strahlen in Richtung Sammellinse 12 und damit in Richtung Medium durchgelassen werden. Die Strahlungsrichtung ist schematisch durch die drei parallelen Pfeile angedeutet.The
Der Referenzempfänger 8 hingegen ist derart zwischen Blendenelement 10 und Leiterplatte 16 angeordnet, dass der Einfluss von Streulicht aus dem Medium praktisch ausgeschlossen ist und das Blendenelement 10 im Wesentlichen eine Reflexionsebene bildet, durch die die Strahlen vom LED-Chip 5 zum Referenzempfänger 8 gelangen. Die reflektierte Strahlung ist ebenfalls durch zwei Pfeile schematisch dargestellt. Auf diese Weise kann sichergestellt werden, dass der Referenzempfänger 8 im Wesentlichen nur die Strahlung des LED-Chips 5 empfängt und somit eine verlässliche Aussage über die jeweils aktuelle Strahlungsintensität des LED-Chips 5 bzw. etwaige Alterungseffekte des LED-Chips 5 möglich ist. Gleichzeit führt diese konstruktive Maßnahme zu keiner nennenswerten Vergrößerung der gesamten Leuchtdiode 5a als Bauteil, so dass nach wie vor eine kompakte Bauweise möglich ist. Dadurch, dass nun bei Verwendung dieser Leuchtdiode in einem Trübungssensor 1 aber kein gewissermaßen extern angeordneter Referenzempfänger notwendig ist, kann der Trübungssensor 1 selbst sehr kompakt und platzsparend ausgeführt werden.The
BezugszeichenlisteList of reference symbols
- 11
- TrübungssensorTurbidity sensor
- 1a1a
- SensorspitzeSensor tip
- 22
- GehäuseHousing
- 2a2a
- GehäuseabschnittHousing section
- 2b2 B
- GehäuseabschnittHousing section
- 33
- SteckeranschlussPlug connection
- 44
- ProzessanschlussProcess connection
- 55
- LED-Chip, StrahlungssenderLED chip, radiation transmitter
- 5a5a
- Strahlungssendereinheit, LichtquelleRadiation transmitter unit, light source
- 66
- StrahlungsempfängerRadiation receiver
- 77
- StrahlengangBeam path
- 88th
- ReferenzempfängerReference recipient
- 99
- FensterbereichWindow area
- 1010
- BlendenelementAperture element
- 1111
- DurchbohrungPerforation
- 1212
- SammellinseConverging lens
- 1313
- Sockelbase
- 1414
- HülseSleeve
- 1515
- elektrische Anschlüsseelectrical connections
- 1616
- LeiterplatteCircuit board
ZITATE ENTHALTEN IN DER BESCHREIBUNGQUOTES INCLUDED IN THE DESCRIPTION
Diese Liste der vom Anmelder aufgeführten Dokumente wurde automatisiert erzeugt und ist ausschließlich zur besseren Information des Lesers aufgenommen. Die Liste ist nicht Bestandteil der deutschen Patent- bzw. Gebrauchsmusteranmeldung. Das DPMA übernimmt keinerlei Haftung für etwaige Fehler oder Auslassungen.This list of documents listed by the applicant was generated automatically and is included solely to provide the reader with better information. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions.
Zitierte PatentliteraturCited patent literature
- DE 102012007864 A1 [0004]DE 102012007864 A1 [0004]
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DE102022132786.8 | 2022-12-09 | ||
DE102022132786 | 2022-12-09 |
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DE102023134379A1 true DE102023134379A1 (en) | 2024-06-20 |
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DE102023134379.3A Pending DE102023134379A1 (en) | 2022-12-09 | 2023-12-08 | LED and turbidity sensor with such a LED |
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WO (1) | WO2024121365A1 (en) |
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DE102012007864A1 (en) | 2012-04-19 | 2013-10-24 | Hydrometer Gmbh | Turbidity sensor and flow meter for fluid |
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EP0412184B1 (en) * | 1989-08-09 | 1995-06-21 | Siemens Aktiengesellschaft | Optoelectronic converter with lens-coupling optics |
JP3767156B2 (en) * | 1998-02-23 | 2006-04-19 | 住友電気工業株式会社 | Optical transceiver module |
US7319522B2 (en) * | 2004-05-27 | 2008-01-15 | Finesse Solutions Llc. | Systems and methods for in situ spectroscopic measurements |
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- 2023-12-08 WO PCT/EP2023/084848 patent/WO2024121365A1/en unknown
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DE102012007864A1 (en) | 2012-04-19 | 2013-10-24 | Hydrometer Gmbh | Turbidity sensor and flow meter for fluid |
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