DE102015108878B8 - Semiconductor device comprising one or more Group III elements with nitrogen - Google Patents

Semiconductor device comprising one or more Group III elements with nitrogen Download PDF

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Publication number
DE102015108878B8
DE102015108878B8 DE102015108878.9A DE102015108878A DE102015108878B8 DE 102015108878 B8 DE102015108878 B8 DE 102015108878B8 DE 102015108878 A DE102015108878 A DE 102015108878A DE 102015108878 B8 DE102015108878 B8 DE 102015108878B8
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DE
Germany
Prior art keywords
nitrogen
semiconductor device
group iii
iii elements
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE102015108878.9A
Other languages
German (de)
Other versions
DE102015108878B3 (en
Inventor
Armin Dadgar
Christoph Berger
Andre Strittmatter
Jörg-Thomas Zettler
Christian Kaspari
Yuto Tomita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Otto Von Guericke Universitaet Magdeburg
Original Assignee
Otto Von Guericke Universitaet Magdeburg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Otto Von Guericke Universitaet Magdeburg filed Critical Otto Von Guericke Universitaet Magdeburg
Priority to DE102015108878.9A priority Critical patent/DE102015108878B8/en
Publication of DE102015108878B3 publication Critical patent/DE102015108878B3/en
Application granted granted Critical
Publication of DE102015108878B8 publication Critical patent/DE102015108878B8/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
DE102015108878.9A 2015-06-04 2015-06-04 Semiconductor device comprising one or more Group III elements with nitrogen Expired - Fee Related DE102015108878B8 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE102015108878.9A DE102015108878B8 (en) 2015-06-04 2015-06-04 Semiconductor device comprising one or more Group III elements with nitrogen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102015108878.9A DE102015108878B8 (en) 2015-06-04 2015-06-04 Semiconductor device comprising one or more Group III elements with nitrogen

Publications (2)

Publication Number Publication Date
DE102015108878B3 DE102015108878B3 (en) 2016-09-15
DE102015108878B8 true DE102015108878B8 (en) 2016-12-08

Family

ID=56800941

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102015108878.9A Expired - Fee Related DE102015108878B8 (en) 2015-06-04 2015-06-04 Semiconductor device comprising one or more Group III elements with nitrogen

Country Status (1)

Country Link
DE (1) DE102015108878B8 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10061168A1 (en) * 2000-11-30 2002-06-13 Laytec Ges Fuer In Situ Und Na Characteristic values measuring method, e.g. temperature of multiple layer materials during layer formation, especially for epitaxial deposition of semiconductors by measurement of Fabry-Perot oscillations
US20030040130A1 (en) * 2001-08-09 2003-02-27 Mayur Abhilash J. Method for selection of parameters for implant anneal of patterned semiconductor substrates and specification of a laser system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10061168A1 (en) * 2000-11-30 2002-06-13 Laytec Ges Fuer In Situ Und Na Characteristic values measuring method, e.g. temperature of multiple layer materials during layer formation, especially for epitaxial deposition of semiconductors by measurement of Fabry-Perot oscillations
US20030040130A1 (en) * 2001-08-09 2003-02-27 Mayur Abhilash J. Method for selection of parameters for implant anneal of patterned semiconductor substrates and specification of a laser system

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
P. Grosse et al.: Characterization of Conducting GaAs Multilayers by Infrared Spectroscopy at Oblique Incidence. In: Appl. Phys. A, 50, 1990, S.7-12. *

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