DE102014009462A1 - Process for producing silicon on quartz substrate - Google Patents

Process for producing silicon on quartz substrate Download PDF

Info

Publication number
DE102014009462A1
DE102014009462A1 DE102014009462.6A DE102014009462A DE102014009462A1 DE 102014009462 A1 DE102014009462 A1 DE 102014009462A1 DE 102014009462 A DE102014009462 A DE 102014009462A DE 102014009462 A1 DE102014009462 A1 DE 102014009462A1
Authority
DE
Germany
Prior art keywords
silicon
quartz substrate
aluminum
area
producing silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE102014009462.6A
Other languages
German (de)
Inventor
Ingrid Schall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SAMEDAY MEDIA GmbH
Original Assignee
SAMEDAY MEDIA GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SAMEDAY MEDIA GmbH filed Critical SAMEDAY MEDIA GmbH
Priority to DE102014009462.6A priority Critical patent/DE102014009462A1/en
Publication of DE102014009462A1 publication Critical patent/DE102014009462A1/en
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/023—Preparation by reduction of silica or free silica-containing material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types

Abstract

Die Erfindung betrifft die Herstellung von Silicium auf Quarzsubstrat, indem zwischen Quarzglasplatte (1) und Aluminiumoxidkeramik (3) eingelegtes Aluminium (2) unter Pressdruck und Hitze das Siliciumdioxid zu Silicium reduziert.The invention relates to the production of silicon on quartz substrate by aluminum (2) inserted between quartz glass plate (1) and alumina ceramic (3) under reduced pressure and heat reduces the silicon dioxide to silicon.

Description

Die Erfindung betrifft ein Verfahren zur Herstellung von Silicium auf Quarzsubstrat mit dem Ziel der Weiterprozessierung zur Solarzelle.The invention relates to a method for the production of silicon on quartz substrate with the aim of further processing to the solar cell.

Die Herstellung von Silicium nach dem Aluminothermie-Verfahren, bei dem Siliziumoxid mit Hilfe von Aluminium zu Silicium reduziert wird, ist im Stand der Technik hinlänglich bekannt. Zum Beispiel wird in US 7922989 beschrieben, dass mit dem Aluminothermie-Verfahren reineres Silizium als mit dem Carbothermischen Verfahren erzeugt werden kann. Nachteil dieses Verfahrens ist, dass das gewonnene Silizium immer noch keine ausreichende Reinheit von 'solargrade' Silicium hat, sondern durch nachfolgende Prozesse wie z. B. dem Siemensverfahren weiter gereinigt werden muss, bevor das Material z. B. in Blöcken eingeschmolzen und als polykristallines Silicium zu Wafern gesägt werden kann.The production of silicon by the aluminothermic process, in which silicon oxide is reduced to silicon with the aid of aluminum, is well known in the art. For example, in US 7922989 described that with the aluminothermic process, purer silicon can be produced than with the carbothermal process. Disadvantage of this method is that the recovered silicon still does not have sufficient purity of 'solar grade' silicon, but by subsequent processes such. B. the Siemens process must be further cleaned before the material z. B. can be melted in blocks and sawn as polycrystalline silicon to wafers.

Vorteilhafter wird hier das Silicium durch die aluminothermische Reduktion auf dem Quarzsubstrat nicht nur unter hoher Temperatur sondern auch unter hohem Press-Druck erzeugt, so dass keine weiteren chemischen Elemente oder Verbindungen zu Verunreinigungen beitragen können wie Tiegelwände, Atmosphäre etc.. Dadurch wird hier ermöglicht, dass das Silizium mit hoher Reinheit und kristalliner Struktur gebildet wird und darüberhinaus eine feste Verbindung mit dem Quarzsubstrat einnimmt. Die flächige kristalline Siliciumschicht eignet sich hervorragend für die Weiterprozessierung zur Solarzelle.Advantageously, the silicon is produced here by the aluminothermic reduction on the quartz substrate not only under high temperature but also under high pressure, so that no further chemical elements or compounds can contribute to impurities such as crucible walls, atmosphere, etc. This makes it possible here that the silicon is formed with high purity and crystalline structure and moreover assumes a firm connection with the quartz substrate. The planar crystalline silicon layer is ideal for further processing to the solar cell.

BezugszeichenlisteLIST OF REFERENCE NUMBERS

11
AluminiumdünnbandAluminum thin strip
22
Quarzsubstratquartz substrate
33
Aluminiumoxidkeramikalumina ceramics

ZITATE ENTHALTEN IN DER BESCHREIBUNG QUOTES INCLUDE IN THE DESCRIPTION

Diese Liste der vom Anmelder aufgeführten Dokumente wurde automatisiert erzeugt und ist ausschließlich zur besseren Information des Lesers aufgenommen. Die Liste ist nicht Bestandteil der deutschen Patent- bzw. Gebrauchsmusteranmeldung. Das DPMA übernimmt keinerlei Haftung für etwaige Fehler oder Auslassungen.This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Zitierte PatentliteraturCited patent literature

  • US 7922989 [0002] US 7922989 [0002]

Claims (1)

Aluminiumdünnband (2) z. B. 50 μm dick, 10 cm × 10 cm Fläche, eingelegt zwischen einer Quarzglasplatte (1) z. B. 3 mm dick, 10 cm × 10 cm Fläche und einer Aluminiumoxidkeramikplatte (3) z. B. 3 mm dick, 10 cm × 10 cm Fläche und unter Press-Druck erhitzt. Das Aluminium reduziert das Siliciumdioxid zu Silicium. Das entstandene Silicium erstarrt beim Abkühlen kristallin auf dem Quarzsubstrat. Das Aluminium reagiert nicht mit der Aluminiumoxidkeramik.Aluminum thin strip ( 2 ) z. B. 50 microns thick, 10 cm × 10 cm area, inserted between a quartz glass plate ( 1 ) z. B. 3 mm thick, 10 cm × 10 cm area and an aluminum oxide ceramic plate ( 3 ) z. B. 3 mm thick, 10 cm × 10 cm area and heated under pressure. The aluminum reduces the silica to silicon. The resulting silicon solidifies on cooling on the quartz substrate on cooling. The aluminum does not react with the alumina ceramics.
DE102014009462.6A 2014-06-30 2014-06-30 Process for producing silicon on quartz substrate Pending DE102014009462A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE102014009462.6A DE102014009462A1 (en) 2014-06-30 2014-06-30 Process for producing silicon on quartz substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102014009462.6A DE102014009462A1 (en) 2014-06-30 2014-06-30 Process for producing silicon on quartz substrate

Publications (1)

Publication Number Publication Date
DE102014009462A1 true DE102014009462A1 (en) 2015-12-31

Family

ID=54839450

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102014009462.6A Pending DE102014009462A1 (en) 2014-06-30 2014-06-30 Process for producing silicon on quartz substrate

Country Status (1)

Country Link
DE (1) DE102014009462A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016117182A1 (en) 2016-09-13 2018-03-15 Technische Universität Braunschweig A method for producing a crystalline silicon layer and silicon-based semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7922989B2 (en) 2006-03-15 2011-04-12 Amendola Steven C Method for making silicon for solar cells and other applications

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7922989B2 (en) 2006-03-15 2011-04-12 Amendola Steven C Method for making silicon for solar cells and other applications

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016117182A1 (en) 2016-09-13 2018-03-15 Technische Universität Braunschweig A method for producing a crystalline silicon layer and silicon-based semiconductor device
WO2018050565A1 (en) 2016-09-13 2018-03-22 Technische Universität Braunschweig Method for producing a crystalline silicon layer and silicon-based semiconductor component

Similar Documents

Publication Publication Date Title
EP1992593B1 (en) Polycrystalline silicon rod for floating zone method and a process for the production thereof
JP5963213B2 (en) Tile substrates for deposition and epitaxial lift-off processes.
DE102012209708B4 (en) Method for controlled layer transfer
RU2009125451A (en) HIGH-TEMPERATURE BINDING ABRASIVE (OPTIONS) AND METHOD FOR PRODUCING IT
CN102527594A (en) Quartz crucible for ingot casting and manufacturing method thereof
CN109133615A (en) Glass substrate for display and its manufacturing method
JP2012518596A5 (en)
EP2544999B1 (en) Method for producing high purity silicon
EP3102717A1 (en) Protective layer for pecvd graphite boats
DE102014009462A1 (en) Process for producing silicon on quartz substrate
TWI405739B (en) Dopant host and method for making the same
DE1771305C3 (en) Process for cleaning a quartz treatment vessel used for semiconductor manufacture
DE2636348A1 (en) METHOD FOR MANUFACTURING PURE ELEMENTARY SEMICONDUCTOR MATERIAL
DE102014003941A1 (en) Process for producing crystalline hyperpure silicon on a quartz substrate
WO2016087328A1 (en) Miniaturised electronic component having a reduced risk of breakage and method for production thereof
CN107324658A (en) A kind of photosensitive glass-ceramics shell and preparation method thereof
DE102008036143A1 (en) Process for removing nonmetallic impurities from metallurgical silicon
EP2756898A3 (en) Method for the production of castings for electrical applications
KR20100000448A (en) Non-oxide thermal coating material and method thereof
DE962868C (en) Crucibles for the production of the purest semiconductor material, especially silicon and its use
CN107601900A (en) A kind of photosensitive glass-ceramics shell and preparation method thereof
CN107399714A (en) A kind of silicon chip and the method for sapphire sheet Direct Bonding
DE1544281A1 (en) Process for preparing semiconductor crystals
DE102007041803A1 (en) Process for producing polycrystalline silicon rods and polycrystalline silicon rod
CN110952144B (en) Method for preparing wurtzite-type silicon crystals based on machining mode

Legal Events

Date Code Title Description
R012 Request for examination validly filed