DE102013203532A1 - component cooling - Google Patents

component cooling Download PDF

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Publication number
DE102013203532A1
DE102013203532A1 DE201310203532 DE102013203532A DE102013203532A1 DE 102013203532 A1 DE102013203532 A1 DE 102013203532A1 DE 201310203532 DE201310203532 DE 201310203532 DE 102013203532 A DE102013203532 A DE 102013203532A DE 102013203532 A1 DE102013203532 A1 DE 102013203532A1
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Prior art keywords
component
base plate
chip
component cooling
heat
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DE201310203532
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German (de)
Inventor
Pirmin Dorfstätter
Gereon Johannes Pusch
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Magna Powertrain GmbH and Co KG
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Magna Powertrain GmbH and Co KG
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Priority to DE201310203532 priority Critical patent/DE102013203532A1/en
Priority to PCT/EP2014/053823 priority patent/WO2014131829A1/en
Publication of DE102013203532A1 publication Critical patent/DE102013203532A1/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805—Shape
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    • H01L2224/4813—Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
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    • H01L2924/1305—Bipolar Junction Transistor [BJT]
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    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

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  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

Beschrieben wird eine Bauteilekühlung eines auf einer Grundplatte sitzenden elektrischen Bauteils, insbesondere eines Leistungsbauteiles in Form eines Chip (C), wobei das Bau-teil (C) über auf der der abgewandten Seite der Grundplatte (GP) verlaufende Leitungen (BD) elektrisch kontaktiert ist, wobei eine der elektrischen Leitungen (BD) mit einer Kühleinrichtung verbunden ist.A component cooling of an electrical component sitting on a base plate, in particular a power component in the form of a chip (C), is described, the component (C) being electrically contacted via lines (BD) running on the opposite side of the base plate (GP) , wherein one of the electrical lines (BD) is connected to a cooling device.

Description

Die Erfindung betrifft eine Bauteilekühlung der Art von Anspruch 1.The invention relates to a component cooling of the type of claim 1.

Elektronische Bauteile entwickeln während des Betriebs Wärme, die zur Erhaltung der Funktionssicherheit abgeführt werden muss. Im Bereich KFZ-Elektronik werden insbesondere IGBT-Module (insulated-gate bipolar transistor), MOSFETs für Schaltvorgänge benutzt. Durch die z.T. beträchtlichen Ströme entsteht Abwärme, die abgeleitet werden muss, um bauteilschädigende Erwärmungen zu verhindern. Üblich ist die Anordnung der Abwärme entwickelnden Bauteile in Kontakt mit Kühlkörpern.Electronic components develop heat during operation, which must be dissipated to maintain functional safety. In the field of automotive electronics in particular IGBT modules (insulated-gate bipolar transistor), MOSFETs are used for switching operations. By the z.T. considerable flows generate waste heat, which must be dissipated to prevent component-damaging warming. Common is the arrangement of the waste heat developing components in contact with heat sinks.

Die DE 10 2004 018 469 B3 sieht eine Leistungshalbleiterschaltung mit einem flach Leistungsmodul vor. Das Leistungshalbleitermodul ist direkt auf einer Deckschiene einer stromführenden Verschienung angeordnet. Eine Kühleinrichtung ist in der Verschienung integriert. Die Kühleinrichtung verläuft zwischen Bauelement und den das Element tragenden Stromschienen.The DE 10 2004 018 469 B3 provides a power semiconductor circuit with a flat power module. The power semiconductor module is arranged directly on a cover rail of a current-carrying busbar. A cooling device is integrated in the busbar. The cooling device extends between the component and the busbars carrying the element.

Die DE 93 07 464 U1 beschreibt eine Vorrichtung zum Einspannen von scheibenförmigen Halbleiterbauelementen, die entlang einer Stromschiene angeordnet sind. In der Stromschiene sind Kühlkanäle angeordnet.The DE 93 07 464 U1 describes a device for clamping disc-shaped semiconductor components, which are arranged along a busbar. In the busbar cooling channels are arranged.

Aus der DE 43 38 277 A1 ist ein flüssigkeitsgekühltes Stromrichtermodul mit einem Leistungshalbleiter bekannt, bei welchem die Bauteile auf einem Isolierbaugruppenträger mit einer Strompfadverschienung angeordnet sind.From the DE 43 38 277 A1 a liquid-cooled power converter module with a power semiconductor is known in which the components are arranged on a Isolierbaugruppenträger with a current flow busbar.

Bei der DE 10 2008 063 724 A1 und der DE 10 2008 061 489 A1 sind Sammelschienenanordnungen mit einer eingebauten Kühlung vorgesehen. Der Entwärmungsweg folgt über die die Bauteile tragende Grundplatte und die Verschienung.In the DE 10 2008 063 724 A1 and the DE 10 2008 061 489 A1 Busbar arrangements are provided with built-in cooling. The Entwärmungsweg follows over the components supporting the base plate and the busbar.

Die Stromschiene der DE 197 15 178 A1 trägt zur Wärmeabgabe einen Kühlkörper.The busbar of the DE 197 15 178 A1 contributes to heat dissipation a heat sink.

Die Aufgabe der vorliegenden Erfindung besteht darin, Bauteilekühlung in gegenüber den bekannten Lösungen verbesserter Ausführung vorzuschlagen.The object of the present invention is to propose component cooling in relation to the known solutions of improved design.

Diese Aufgabe wird gelöst durch die Merkmale von Anspruch 1. Weiterbildungen ergeben sich aus den Unteransprüchen.This object is achieved by the features of claim 1. Further developments will become apparent from the dependent claims.

Die Erfindung sieht eine Bauteilekühlung eines auf einer Grundplatte sitzenden elektrischen Bauteils vor, wobei das Bauteil über auf der der abgewandten Seite der Grundplatte verlaufende Leitungen elektrisch kontaktiert ist, wobei eine der elektrischen Leitungen eine Kühleinrichtung aufweist bzw. mit einer solchen verbunden ist.The invention provides a component cooling of an electrical component seated on a base plate, wherein the component is electrically contacted via lines running on the opposite side of the base plate, one of the electrical lines having or being connected to a cooling device.

Bevorzugt erfolgt die Kühlung über eine Stromschiene, welche oberhalb der das Bauteil tragenden Anordnung sitzt und in ihrer Dimensionierung zur Ableitung eines vorgesehenen Wärmestromes ausgeführt ist. Die Bonddrähte des Chip sind zu einer, mehreren Stromschienen geführt. Die Kontakte der Bonddrähte zum Chip sind zwar kleinflächig, durch das gut wärmeleitende Material (Kupfer) erfolgt auf diesem Weg eine Entwärmung, das thermische Niveau des Chip wird spürbar gesenkt.Preferably, the cooling takes place via a busbar, which sits above the device carrying the assembly and is designed in its dimensions for the derivation of a proposed heat flow. The bonding wires of the chip are led to one, several busbars. Although the contacts of the bonding wires to the chip are small in area, heat dissipation through the good heat-conducting material (copper) in this way, the thermal level of the chip is noticeably reduced.

Eine weitere bevorzugte Ausführung der Erfindung sieht eine Ergänzung der Stromschienen mit Kühlkanälen vor. Diese Erweiterung erhöht den Bauraum der Stromschienen, jedoch kann so eine Kühlung, eine Entwärmung sehr nahe am Chip realisiert werden, wobei ein vorhandener Kühlkreislauf genutzt wird.A further preferred embodiment of the invention provides for a supplement of the busbars with cooling channels. This extension increases the space of the busbars, but so can a cooling, a cooling very close to the chip can be realized, with an existing cooling circuit is used.

Bei üblicher Anordnung von elektronischen Leistungsbauelementen erfolgt die Entwärmung über eine Grundplatte, die das Bauelement trägt. Zusätzlich kann an der Rückseite der Grundplatte, auf der dem Bauteil abgewandten Seite ein Kühlkörper angeordnet sein. In conventional arrangement of electronic power devices, the heat dissipation via a base plate, which carries the device. In addition, a heat sink can be arranged on the rear side of the base plate, on the side facing away from the component.

Die Erfindung sieht eine zusätzliche Entwärmung, eine Wärmeabfuhr oberhalb der Grundplatte vor. Vorzugsweise werden die Bonddrähte des Chip genutzt, wozu diese in Wärmekontakt mit einer Stromschiene gebracht werden. The invention provides additional heat dissipation, heat dissipation above the base plate. Preferably, the bonding wires of the chip are used, for which purpose they are brought into thermal contact with a busbar.

Des Weiteren wird ein Ausführungsbeispiel der Erfindung an Hand der Zeichnungen beschrieben.Furthermore, an embodiment of the invention will be described with reference to the drawings.

1 zeigt einen Chip C, der in gutem Wärmekontakt auf einer Grundplatte GP angeordnet ist. Der Chip C sitzt über eine DBC-Schicht (Directed Bonded Copper) sowie einer Lotschicht LS auf der Grundplatte GP. Diese Grundplatte GP weist an ihrer Rückseite – der dem Chip C abgewandten Seite – einen Kühlkörper KK auf. Der Kühlkörper KK ist über eine Wärmeleitpaste WLP in gutem thermischen Kontakt mit der Grundplatte GP über Schrauben verbunden. Dadurch erfolgt ein erster und auch wesentlicher Wärmetransport vom Chip C über dessen Rückseite und die Grundplatte GP in den Kühlkörper KK. Dieser Wärmetransport ist in 1 mit den nach unten in den Kühlkörper KK weisenden Pfeilen angedeutet. 1 shows a chip C, which is arranged in good thermal contact on a base plate GP. The chip C sits over a DBC layer (Directed Bonded Copper) and a solder layer LS on the base GP. This base plate GP has on its rear side - the side facing away from the chip C - a heat sink KK. The heat sink KK is connected via a thermal grease WLP in good thermal contact with the base plate GP via screws. This results in a first and also substantial heat transfer from the chip C via the rear side and the base plate GP in the heat sink KK. This heat transport is in 1 indicated with the downward pointing in the heat sink KK arrows.

Der Chip C ist über eine Anzahl Bonddrähte BD kontaktiert. Über in Form von Stromschienenkörpern SK gestalteter Anschlüsse A erfolgt die elektrische Verbindung zu mit dem Chip C zusammenwirkenden Komponenten. Die Anschlüsse A sind in der Dimensionierung für einen Wärmetransport ausgelegt, d.h. in Querschnitt und Material entsprechend gestaltet. Die Anschlüsse A sehen mit einer nicht dargestellten Temperatursenke in Verbindung, so dass die vom Chip C über dessen Bonddrähte abgegebene Wärme abgeführt wird. Dieser Wärmestrom ist durch die in der 1 wiedergegebenen und nach oben weisenden Pfeile angedeutet. The chip C is contacted via a number of bonding wires BD. About designed in the form of busbar bodies SK ports A, the electrical connection to the chip C cooperating components. The connections A are in the dimensioning for a heat transfer designed, ie designed in cross section and material accordingly. The connections A are connected to a temperature sink (not shown), so that the heat released by the chip C via its bonding wires is dissipated. This heat flow is through in the 1 indicated and indicated upward arrows.

Die 2 und 3 zeigen den erfindungsgemäßen Stromschienenkörper SK in perspektivischer sowie in geschnittener Darstellung. Der Stromschienenkörper SK weist Kontakte auf, die der Verbindung mit dem Chip dienen. Über die Bonddrähte BD aber auch die über die DBC abgeleitete Wärme des Chip C nimmt der Stromkörper SK Wärme auf, welche durch in seinem Inneren verlaufende Kühlmittelkanäle weitergeleitet wird.The 2 and 3 show the busbar body SK according to the invention in perspective and in a sectional view. The busbar body SK has contacts that serve to connect to the chip. The current body SK absorbs heat via the bonding wires BD as well as the heat of the chip C derived via the DBC, which heat is passed on through coolant channels running in its interior.

3 zeigt einen Schnitt durch den Stromschienenkörper SK nach 2. Im Inneren weist der aus einem Kunststoff gefertigte Stromschienenkörper SK zwei Leiterbahnen LB1, LB2 auf, denen insgesamt drei Kühlmittelkanäle KK1, KK2, KK3 zugeordnet sind. Über diese Kühlmittelkanäle KK1, KK2, KK3 erfolgt der Wärmetransport der über die Bonddrähte BD sowie den Flächenkontakt des Stromschienenkörpers SK eingebrachten Wärmemenge. 3 shows a section through the busbar body SK after 2 , In the interior, the conductor rail body SK made of a plastic has two conductor tracks LB1, LB2, to which a total of three coolant channels KK1, KK2, KK3 are assigned. Through these coolant channels KK1, KK2, KK3, the heat transfer of the heat introduced via the bonding wires BD and the surface contact of the busbar body SK heat.

Die von einem Kühlmittelfluid durchflossenen Kühlmittelkanäle KK1, KK2, KK3 stehen mit einem vorhandenen Kühlsystem der Elektronik in Kontakt und geben ihre im Bereich des Chip C aufgenommene Wärme an diese Wärmesenke ab. The coolant channels KK1, KK2, KK3 through which a coolant fluid is in contact with an existing cooling system of the electronics and deliver their heat absorbed in the region of the chip C to this heat sink.

Bezugszeichenreference numeral

  • CC
    Chipchip
    BDBD
    Bonddrahtbonding wire
    GPGP
    Grundplattebaseplate
    DBCDBC
    Directed Bonded CopperDirected Bonded Copper
    LSLS
    Lotschichtsolder layer
    KKKK
    Kühlkörperheatsink
    WLPWLP
    WärmeleitpasteThermal Compounds
    AA
    Anschlussconnection
    SKSK
    StromschienenkörperBusbar body
    LB1, LB2LB1, LB2
    Leiterbahn elektrischTrack electrically
    KK1, KK2, KK3KK1, KK2, KK3
    KühlmittelkanalCoolant channel

ZITATE ENTHALTEN IN DER BESCHREIBUNG QUOTES INCLUDE IN THE DESCRIPTION

Diese Liste der vom Anmelder aufgeführten Dokumente wurde automatisiert erzeugt und ist ausschließlich zur besseren Information des Lesers aufgenommen. Die Liste ist nicht Bestandteil der deutschen Patent- bzw. Gebrauchsmusteranmeldung. Das DPMA übernimmt keinerlei Haftung für etwaige Fehler oder Auslassungen.This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Zitierte PatentliteraturCited patent literature

  • DE 102004018469 B3 [0003] DE 102004018469 B3 [0003]
  • DE 9307464 U1 [0004] DE 9307464 U1 [0004]
  • DE 4338277 A1 [0005] DE 4338277 A1 [0005]
  • DE 102008063724 A1 [0006] DE 102008063724 A1 [0006]
  • DE 102008061489 A1 [0006] DE 102008061489 A1 [0006]
  • DE 19715178 A1 [0007] DE 19715178 A1 [0007]

Claims (7)

Bauteilekühlung eines auf einer Grundplatte sitzenden elektrischen Bauteils, insbesondere eines Leistungsbauteiles in Form eines Chip (C), wobei das Bauteil (C) über auf der der abgewandten Seite der Grundplatte (GP) verlaufende Leitungen (BD) elektrisch kontaktiert ist, und wobei eine der elektrischen Leitungen (BD) mit einer Kühleinrichtung verbunden ist.Component cooling of an electrical component seated on a base plate, in particular of a power component in the form of a chip (C), wherein the component (C) via the on the opposite side of the base plate (GP) extending lines (BD) is electrically contacted, and wherein one of electrical lines (BD) is connected to a cooling device. Bauteilekühlung nach Anspruch 1, die elektrische Leitung (BD) ist in einen Anschluss (A) geführt, der als Wärmeleiter ausgebildet ist. Component cooling according to claim 1, the electrical line (BD) is guided in a connection (A), which is designed as a heat conductor. Bauteilekühlung nach Anspruch 1, der Anschluss (A) ist als einen Stromschienenkörper (SK) ausgebildet und weist einen von einem Kühlmittel durchströmten Kühlmittelkanal (KK1, KK2, KK3) auf. Component cooling according to claim 1, the terminal (A) is formed as a busbar body (SK) and has a coolant flowed through by a coolant channel (KK1, KK2, KK3). Bauteilekühlung nach Anspruch 3, der Stromschienenkörper (SK) weist eine Anzahl elektrischer Leiterbahnen (LB1, LB2) sowie eine Anzahl Kühlmittelkanäle (KK1, KK2, KK3) auf. Component cooling according to claim 3, the busbar body (SK) has a number of electrical conductor tracks (LB1, LB2) and a number of coolant channels (KK1, KK2, KK3). Bauteilekühlung nach Anspruch 4, die elektrischen Leiterbahnen (LB1, LB2) sowie die Kühlmittelkanäle (KK1, KK2, KK3) sind paarweise abwechselnd angeordnet. Component cooling according to claim 4, the electrical conductor tracks (LB1, LB2) and the coolant channels (KK1, KK2, KK3) are arranged in pairs alternately. Bauteilekühlung nach Anspruch 3, 4 oder 5, der Stromschienenkörper (SK) ist aus Kunststoff gefertigt. Component cooling according to claim 3, 4 or 5, the busbar body (SK) is made of plastic. Bauteilekühlung nach Anspruch 3, 4, 5 oder 6, der Kühlmittelkanal (KK1, KK2, KK3) des Stromschienenkörpers (SK) steht mit einem Kühlungssystem der Elektronik in Verbindung. Component cooling according to claim 3, 4, 5 or 6, the coolant channel (KK1, KK2, KK3) of the busbar body (SK) is in communication with a cooling system of the electronics.
DE201310203532 2013-03-01 2013-03-01 component cooling Withdrawn DE102013203532A1 (en)

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DE9307464U1 (en) 1993-05-17 1993-07-15 Siemens Ag, 8000 Muenchen, De
DE4338277A1 (en) 1993-07-17 1995-01-19 Abb Patent Gmbh Liquid-cooled convertor module having circuitry components for power semiconductors which can be turned off
DE19715178A1 (en) 1997-04-11 1998-10-22 Loh Kg Rittal Werk Busbar with adjustable bolt=on finned plate(s), improving cooling
JP2005123265A (en) * 2003-10-14 2005-05-12 Sumitomo Electric Ind Ltd Power device cooling apparatus and inverter unit for motor driving
DE102004018469B3 (en) 2004-04-16 2005-10-06 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Power semiconductor circuit
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016200724A1 (en) 2016-01-20 2017-07-20 Robert Bosch Gmbh Device for cooling at least one bus bar and corresponding power circuit

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