DE102009031705A1 - Micromechanical pressure sensor has substrate and diaphragm, which has piezo-resistive sensor elements, where substrate has framework with rectangular cross section - Google Patents
Micromechanical pressure sensor has substrate and diaphragm, which has piezo-resistive sensor elements, where substrate has framework with rectangular cross section Download PDFInfo
- Publication number
- DE102009031705A1 DE102009031705A1 DE200910031705 DE102009031705A DE102009031705A1 DE 102009031705 A1 DE102009031705 A1 DE 102009031705A1 DE 200910031705 DE200910031705 DE 200910031705 DE 102009031705 A DE102009031705 A DE 102009031705A DE 102009031705 A1 DE102009031705 A1 DE 102009031705A1
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- DE
- Germany
- Prior art keywords
- substrate
- membrane
- pressure sensor
- diaphragm
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
- G01L9/0047—Diaphragm with non uniform thickness, e.g. with grooves, bosses or continuously varying thickness
Abstract
Description
Die Erfindung betrifft einen mikromechanischen Drucksensor mit einem Substrat und einer Membran, an der sich piezoresistive Sensorelemente befinden.The The invention relates to a micromechanical pressure sensor with a Substrate and a diaphragm on which piezoresistive sensor elements are located.
Die Erfindung ist vorzugsweise für Druckmessungen mit häufig wechselnden Belastungen einsetzbar.The Invention is preferably for pressure measurements with frequent can be used for changing loads.
Im Stand der Technik sind verschiedene mikromechanische Anordnungen zur Druckmessung bekannt.in the State of the art are various micromechanical arrangements known for pressure measurement.
In
Ferner
ist in
In
Der Erfindung liegt die Aufgabe zugrunde, einen Drucksensor der eingangs genannten Art zu schaffen, der geringe Abmessungen aufweist und bei dem Torsionsbeanspruchungen der Membran weitgehend vermieden werden.Of the Invention is based on the object, a pressure sensor of the beginning mentioned type to create, which has small dimensions and largely avoided in the torsional stresses of the membrane become.
Erfindungsgemäß wird
die Aufgabe mit einer Anordnung gelöst, welche die in Anspruch
1 angegebenen Merkmale enthält.According to the invention
the object is achieved with an arrangement which the
Vorteilhafte Ausgestaltungen sind in den Unteransprüchen angegeben.advantageous Embodiments are specified in the subclaims.
Gegenstand der Erfindung sind auch Merkmalskombinationen bei denen die in der Beschreibung und/oder in den Ansprüchen angegebenen Einzelmerkmale beliebig miteinander kombiniert werden.object The invention also feature combinations in which in the Description and / or specified in the claims individual features be combined with each other as desired.
Der Drucksensor weist ein Substrat mit einem Rahmen auf, an dem die Membran angeordnet ist. An der Unterseite der Membran befindet sich ein zentral angeordnetes Masseelement. Damit werden geringe Abmessungen der Anordnung ermöglicht. Die streifenförmigen Abschnitte der Membran, die sich zwischen Rahmen und Masseelement befinden, sind jeweils mit zwei partiellen Verstärkungen versehen. Damit werden sowohl eine hohe Sicherheit gegenüber Torsionsbeanspruchungen erreicht als auch Nichtlinearitäten der Druck-Auslenkungs-Abhängigkeit verringert. Zweckmäßigerweise befinden sich die piezoresistiven Sensoren in den Verstärkungen.Of the Pressure sensor has a substrate with a frame on which the Membrane is arranged. At the bottom of the membrane is located a centrally located mass element. This will be small dimensions the arrangement allows. The strip-shaped Sections of the diaphragm, extending between frame and mass element are each with two partial reinforcements Mistake. This is both a high security compared Torsional stresses achieved as well as nonlinearities reduces the pressure-deflection dependence. Conveniently, the piezoresistive sensors are located in the reinforcements.
Eine vorteilhafte Ausführung sieht vor, dass die Verstärkungen symmetrisch jeweils rechts und links der Mitte der streifenförmigen Abschnitte angebracht sind.A advantageous embodiment provides that the reinforcements symmetrical in each case right and left of the middle of the strip-shaped Sections are attached.
Ferner ist es möglich, dass die streifenförmigen Verstärkungen an den Ecken des Masseelementes angeordnet sind.Further it is possible that the strip-shaped reinforcements are arranged at the corners of the mass element.
Eine weitere vorteilhafte Ausführung entsteht dadurch, dass die piezoresistiven Zonen in der Membran zu einer Wheatstonschen Messbrücke geschaltet sind, mit der die druckabhängige Auslenkung der Membran erfasst wird.A Another advantageous embodiment arises from the fact that the piezoresistive zones in the membrane to a Wheatstone Measuring bridge are connected, with the pressure-dependent Deflection of the membrane is detected.
Die zweifache Anordnung der Versteifungen ermöglicht es, dass die piezoresistiven Zonen in der Membran zu zwei Wheatstonschen Messbrücken geschaltet sind. Damit können auch Temperaturunterschiede bei der Messung kompensiert werden.The double arrangement of the stiffeners allows that the piezoresistive zones in the membrane to two Wheatstone Measuring bridges are connected. With that too can Temperature differences are compensated during the measurement.
Die Erfindung wird im Folgenden anhand eines Ausführungsbeispieles näher erläutert.The Invention will be described below with reference to an embodiment explained in more detail.
In den zugehörigen Zeichnungen zeigen:In show the accompanying drawings:
Die
in
Bei
der in
In
BezugszeichenlisteLIST OF REFERENCE NUMBERS
- 11
- Rahmenframe
- 22
- Membranmembrane
- 2.1 ... 2.82.1 ... 2.8
- Verstärkungreinforcement
- 33
- Masseelementmass element
ZITATE ENTHALTEN IN DER BESCHREIBUNGQUOTES INCLUDE IN THE DESCRIPTION
Diese Liste der vom Anmelder aufgeführten Dokumente wurde automatisiert erzeugt und ist ausschließlich zur besseren Information des Lesers aufgenommen. Die Liste ist nicht Bestandteil der deutschen Patent- bzw. Gebrauchsmusteranmeldung. Das DPMA übernimmt keinerlei Haftung für etwaige Fehler oder Auslassungen.This list The documents listed by the applicant have been automated generated and is solely for better information recorded by the reader. The list is not part of the German Patent or utility model application. The DPMA takes over no liability for any errors or omissions.
Zitierte PatentliteraturCited patent literature
- - JP 61-82130 [0004] - JP 61-82130 [0004]
- - DE 112004002281 T5 [0005] - DE 112004002281 T5 [0005]
- - US 4454771 [0006] US 4454771 [0006]
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE200910031705 DE102009031705A1 (en) | 2009-07-04 | 2009-07-04 | Micromechanical pressure sensor has substrate and diaphragm, which has piezo-resistive sensor elements, where substrate has framework with rectangular cross section |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE200910031705 DE102009031705A1 (en) | 2009-07-04 | 2009-07-04 | Micromechanical pressure sensor has substrate and diaphragm, which has piezo-resistive sensor elements, where substrate has framework with rectangular cross section |
Publications (1)
Publication Number | Publication Date |
---|---|
DE102009031705A1 true DE102009031705A1 (en) | 2011-01-05 |
Family
ID=43299096
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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DE200910031705 Ceased DE102009031705A1 (en) | 2009-07-04 | 2009-07-04 | Micromechanical pressure sensor has substrate and diaphragm, which has piezo-resistive sensor elements, where substrate has framework with rectangular cross section |
Country Status (1)
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DE (1) | DE102009031705A1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012171747A1 (en) | 2011-06-14 | 2012-12-20 | Endress+Hauser Gmbh+Co. Kg | Interferometric pressure measurement cell |
DE102011081651A1 (en) * | 2011-08-26 | 2013-02-28 | Endress + Hauser Gmbh + Co. Kg | Interferometric pressure sensor |
WO2018057059A1 (en) * | 2016-09-26 | 2018-03-29 | Rosemount Inc. | Pressure sensor diaphragm with overpressure protection |
US10060813B2 (en) | 2015-09-29 | 2018-08-28 | Rosemount Inc. | High over-pressure capable silicon die pressure sensor |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4454771A (en) | 1980-11-07 | 1984-06-19 | Hitachi, Ltd. | Load cell |
JPS6182130A (en) | 1984-09-28 | 1986-04-25 | Shimadzu Corp | Surface acoustic wave pressure sensor |
DE112004002281T5 (en) | 2003-11-27 | 2006-10-26 | Kyocera Corp. | Pressure sensor device |
-
2009
- 2009-07-04 DE DE200910031705 patent/DE102009031705A1/en not_active Ceased
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4454771A (en) | 1980-11-07 | 1984-06-19 | Hitachi, Ltd. | Load cell |
JPS6182130A (en) | 1984-09-28 | 1986-04-25 | Shimadzu Corp | Surface acoustic wave pressure sensor |
DE112004002281T5 (en) | 2003-11-27 | 2006-10-26 | Kyocera Corp. | Pressure sensor device |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012171747A1 (en) | 2011-06-14 | 2012-12-20 | Endress+Hauser Gmbh+Co. Kg | Interferometric pressure measurement cell |
DE102011077499A1 (en) | 2011-06-14 | 2012-12-20 | CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH | Interferometric pressure measuring cell |
DE102011081651A1 (en) * | 2011-08-26 | 2013-02-28 | Endress + Hauser Gmbh + Co. Kg | Interferometric pressure sensor |
US10060813B2 (en) | 2015-09-29 | 2018-08-28 | Rosemount Inc. | High over-pressure capable silicon die pressure sensor |
WO2018057059A1 (en) * | 2016-09-26 | 2018-03-29 | Rosemount Inc. | Pressure sensor diaphragm with overpressure protection |
CN107870050A (en) * | 2016-09-26 | 2018-04-03 | 罗斯蒙特公司 | Pressure sensor diaphragm with overvoltage protection |
US10203258B2 (en) | 2016-09-26 | 2019-02-12 | Rosemount Inc. | Pressure sensor diaphragm with overpressure protection |
CN107870050B (en) * | 2016-09-26 | 2021-11-12 | 罗斯蒙特公司 | Pressure sensor diaphragm with overpressure protection |
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