DE102008046443A1 - Sputtering target comprises a carrier body, and a sputtering material, which is fixed by a connection layer on the carrier body, where the connection layer consists of inorganic oxide and/or silicate as main component of its binder phase - Google Patents

Sputtering target comprises a carrier body, and a sputtering material, which is fixed by a connection layer on the carrier body, where the connection layer consists of inorganic oxide and/or silicate as main component of its binder phase Download PDF

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Publication number
DE102008046443A1
DE102008046443A1 DE102008046443A DE102008046443A DE102008046443A1 DE 102008046443 A1 DE102008046443 A1 DE 102008046443A1 DE 102008046443 A DE102008046443 A DE 102008046443A DE 102008046443 A DE102008046443 A DE 102008046443A DE 102008046443 A1 DE102008046443 A1 DE 102008046443A1
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Prior art keywords
carrier body
connection layer
sputtering
sputtering target
silicate
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DE102008046443A
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German (de)
Inventor
Christoph Simons
Peter Preissler
Josef Heindel
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WC Heraus GmbH and Co KG
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WC Heraus GmbH and Co KG
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Priority to DE102008046443A priority Critical patent/DE102008046443A1/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets

Abstract

The sputtering target comprises a carrier body, and a sputtering material, which is fixed by a connection layer on the carrier body. The connection layer consists of inorganic oxide and/or silicate as main component of its binder phase, and contains electric- and/or heat conductive particles and/or fibers. The carrier body and the sputtering material are bonded with one another by an electric conductive- and/or heat conductive body.

Description

Die Erfindung betrifft ein Sputtertarget mit einem Trägerkörper und einem Sputtermaterial, wobei das Sputtermaterial mittels mindestens einer Verbindungsschicht auf dem Trägerkörper fixiert ist.The The invention relates to a sputtering target with a carrier body and a sputtering material, wherein the sputtering material by means of at least a bonding layer on the carrier body is fixed.

Beim Sputterprozeß werden die Sputtermaterialien relativ hohen Temperaturen ausgesetzt. Sie müssen also temperaturbeständig mit dem Trägerkörper des Sputtertargets verbunden sein. DE 20 2006 018 079 U1 offenbart eine Verbindungstechnik, bei der das Sputtermaterial und der Trägerkörper mittels plastisch verformbarer Ausgleichsmaterialien verbunden sind. Hierbei wird ein Weichlot in den Spalt zwischen Trägerkörper und Sputtermaterial eingebracht. In EP 1561836 A1 ist die Fixierung eines Targetsmaterials auf einem Trägerrohr mittels eines mit Fluiddruck plastisch verformbaren Pressteils offenbart, wobei das Pressteil beispielsweise eine plastisch aufgeweitete Kupfer-Rohr-Spirale sein kann.In the sputtering process, the sputtering materials are exposed to relatively high temperatures. They must therefore be connected to the carrier body of the sputtering target in a temperature-resistant manner. DE 20 2006 018 079 U1 discloses a bonding technique in which the sputtering material and the carrier body are connected by means of plastically deformable balancing materials. Here, a soft solder is introduced into the gap between the carrier body and sputtering material. In EP 1561836 A1 the fixing of a target material on a support tube is disclosed by means of a plastically deformable with fluid pressure molding, wherein the pressing member may be, for example, a plastically expanded copper tube spiral.

In DE 10 2006 060 512 A1 ist beschrieben, dass die Verbindung zwischen Trägerkörper und Sputtermaterial mit Hilfe von Metallstreifen realisiert wird, wobei zur Erhöhung der Wärmeleitfähigkeit die Metallstreifen zusätzlich in eine Schüttung aus wärmeleitfähigem Pulver eingebettet werden können. DE 10 2005 020 250 A1 offenbart ein Verbindungsverfahren, bei dem ein Spalt zwischen Trägerkörper und Sputtermaterial mit einer Pulverschüttung gefüllt wird. Die Pulverschüttung kann zusätzlich mit einem Lot oder einem organischen oder anorganischen Polymer infiltriert werden.In DE 10 2006 060 512 A1 is described that the connection between the carrier body and sputtering material is realized by means of metal strips, wherein the metal strips can be additionally embedded in a bed of thermally conductive powder to increase the thermal conductivity. DE 10 2005 020 250 A1 discloses a joining method in which a gap between the carrier body and the sputtering material is filled with a powder bed. The powder bed can additionally be infiltrated with a solder or an organic or inorganic polymer.

DE 10 2005 029 221 A1 beschreibt einen Kleber auf Basis eines Epoxydharzes, welches Pulver oder Fasern als Füllstoff enthalten kann. DE 10 2004 060 423 A1 beschreibt eine Möglichkeit, ein Sputtermaterial mittels eines wärmeleitungsfähigen Klebstoffes auf einem Trägerrohr zu fixieren. Diese Technik kann eingesetzt werden, wenn geringere Ansprüche an die Wärmeleitfähigkeit des Sputtertargets gestellt werden. DE 10 2005 029 221 A1 describes an adhesive based on an epoxy resin, which may contain powder or fibers as a filler. DE 10 2004 060 423 A1 describes a way to fix a sputtering material by means of a thermally conductive adhesive on a support tube. This technique can be used if lower demands are placed on the thermal conductivity of the sputtering target.

Der Erfindung liegt die Aufgabe zugrunde, die bekannten Verbindungstechniken bei Sputtertargets zu verbessern und die Temperaturbeständigkeit zu erhöhen.Of the Invention is based on the object, the known joining techniques to improve sputtering targets and the temperature resistance too increase.

Die Aufgabe wird durch die Merkmale des Hauptanspruchs gelöst. Vorteilhafte Ausgestaltungen sind in den Unteransprüchen angegeben. Dadurch, dass die Verbindungsschicht als Hauptbestandteil ihrer Bindephase mindestens ein anorganisches Oxid und oder Silikat enthält, sind relativ hochtemperaturbeständige Verbindungen mit relativ guter Wärmeleitfähigkeit herstellbar. Vorzugsweise enthält die Verbindungsschicht mindestens ein Oxid und/oder Silikat auf Basis mindestens eines Elementes aus der Gruppe Si, Al, Zr, Mg, Fe, K, Ca, Na, einzeln oder gemischt. Zusätzlich kann die Verbindungsschicht elektrisch und/oder wärmeleitende Partikel und/oder Fasern enthalten. Die Partikel und/oder Fasern können mindestens ein Material aus der Gruppe Al, Ag, C, Cu, Fe, Ni, Si, SiC aufweisen. Die Partikel und/oder Fasern sollten dabei eine solche Leitfähigkeit aufweisen, die besser ist, als die Leitfähigkeit, die die Verbindungsschicht ohne diese Partikel bzw. Fasern hätte. Zusätzlich können Trägerkörper und Sputtermaterial durch elektrisch leitende und/oder wärmeleitende Körper, wie beispielsweise metallische Lamellen, Streifen, Stäbe, Klammern, Ringe, Netze oder Drähte miteinander verbunden sein.The The object is solved by the features of the main claim. Advantageous embodiments are in the subclaims specified. Due to the fact that the connecting layer is the main component their binder phase at least one inorganic oxide and or silicate contains are relatively high temperature resistant Compounds with relatively good thermal conductivity produced. Preferably, the tie layer contains at least one oxide and / or silicate based on at least one Element from the group Si, Al, Zr, Mg, Fe, K, Ca, Na, individually or mixed. In addition, the connection layer can be electrically and / or thermally conductive particles and / or fibers. The particles and / or fibers may be at least one material from the group Al, Ag, C, Cu, Fe, Ni, Si, SiC. The particles and / or fibers should have such a conductivity which is better than the conductivity that the Connecting layer without these particles or fibers would have. In addition, carrier bodies and sputtering material by electrically conductive and / or thermally conductive Bodies, such as metallic fins, strips, Rods, staples, rings, nets or wires together be connected.

Zur Herstellung der festen Verbindungsschicht können flüssige Ausgangsstoffe verwendet werden, wie z. B. Wasserglas, Kieselsäure, wasserlösliches Aluminat, die mit einem leitfähigen Pulver, beispielsweise Aluminium, gemischt werden. Die Bildung einer festen, zusammenhängenden Matrix erfolgt im wesentlichen über wasserglasartige oder kieselgelartige Vernetzungsstrukturen, die letztlich hohe amorphe Strukturanteile ergeben können. Ebenso kann aus wasserlöslichen Aluminaten im sauren Medium Aluminiumoxid auskristallisieren. Die die spätere Verbindungsschicht bildende Verbindungsmasse wird als flüssige Masse bei Raumtemperatur in den Spalt zwischen Trägerkörper und Sputtermaterial eingebracht. Die Aushärtung kann bei Raumtemperatur erfolgen, sie wird bei höheren Temperaturen, wie beispielsweise bei 100°C allerdings beschleunigt. Die Temperaturbeständigkeit dieser Verbindungsschicht übertrifft die der Lote, Kleber und Verfüllmassen deutlich. Es können Temperaturbeständigkeiten von über 600°C erreicht werden.to Preparation of the solid compound layer can be liquid Starting materials are used, such as. As water glass, silica, water-soluble aluminate containing a conductive Powder, such as aluminum, are mixed. The formation of a solid, contiguous matrix is essentially about water-glassy or silica gel-like cross-linking structures, the ultimately high amorphous structure shares can result. Likewise, from water-soluble aluminates in an acidic medium Crystallize out alumina. The the later connection layer forming bonding compound is used as a liquid mass at room temperature introduced into the gap between the carrier body and sputtering material. The curing can be done at room temperature, it will at higher temperatures, such as at 100 ° C but accelerated. The temperature resistance of this Bonding layer surpasses that of the solders, adhesives and Filling masses clearly. It can be temperature resistance of over 600 ° C can be achieved.

Nachfolgend wird die Erfindung an Hand von Ausführungsbeispielen erläutert.following The invention will be explained with reference to exemplary embodiments.

Beispiel 1:Example 1:

Als Sputtermaterial wird rohrförmiges Zink-Aluminium-Oxid verwendet. Es werden mehrere Rohre mit einem Außendurchmesser von 160 mm, einem Innendurchmesser von 135 mm und einer Länge von 125 mm auf ein Edelstahlrohr mit einer Länge von 1550 mm und einem Außendurchmesser von 133 mm befestigt. Die Befestigung erfolgt derart, dass jedes Rohr einzeln mit einer Verbindungsmasse befestigt wird. Die Verbindungsmasse wurde aus Kieselsäure und Aluminiumpulver gebildet, nach der Aushärtung weist die Verbindungsschicht ein Gemisch aus Siliziumoxid und Aluminiumpulver auf. Vor dem Einbringen der Verbindungsmasse in den Spalt zwischen dem Trägerrohr und dem Sputtermaterial erfolgt eine Zentrierung der beiden Rohre ineinander und gegebenenfalls eine elektrische Kontaktierung zwischen den beiden Rohren. Die elektrische Kontaktierung wird über entsprechende Konstruktionselemente, wie beispielsweise Kupfer-Kontaktstreifen realisiert. Die Verbindungsmasse wird entweder auf die zu verbindenden Flächen aufgestrichen oder in den Spalt zwischen den zu verbindenden Flächen eingegossen oder eingespritzt und anschließend ausgehärtet. Die Temperaturbeständigkeit der Verbindungsmasse beträgt ca. 600°C.The sputtering material used is tubular zinc-aluminum oxide. Several pipes with an outer diameter of 160 mm, an inner diameter of 135 mm and a length of 125 mm are mounted on a stainless steel pipe with a length of 1550 mm and an outer diameter of 133 mm. The attachment is made such that each tube is fastened individually with a bonding compound. The compound compound was formed from silica and aluminum powder, after curing, the compound layer has a mixture of silicon oxide and aluminum powder. Before the introduction of the bonding compound into the gap between the carrier tube and the sputtering material, a centering of the two tubes into one another and optionally an electrical contacting takes place between the two pipes. The electrical contact is realized via corresponding construction elements, such as copper contact strips. The bonding compound is either brushed onto the surfaces to be joined or poured or injected into the gap between the surfaces to be joined and then cured. The temperature resistance of the bonding compound is about 600 ° C.

Beispiel 2:Example 2:

Ein oder mehrere Rohre aus Indiumzinnoxid mit einem Außendurchmesser von 160 mm, einem Innendurchmesser von 135 mm und einer Länge von 100 mm werden auf ein Edelstahlträgerrohr (siehe Beispiel 1) aufgeschoben. Der sich ergebende Bondspalt wird nacheinander für jedes Sputtermaterial-Rohr mit einer Masse aus flüssiger Kieselsäure und Aluminiumpulver im gewichtsbezogenen Mischungsverhältnis von 1:1 bei Raumtemperatur gefüllt. Der sogenannte Bondspalt zwischen den einzelnen, hintereinander auf das Trägerrohr aufgeschobenen Indiumzinnoxid-Rohren wird jeweils abgedichtet, um ein Auslaufen der Kieselsäure-Aluminium-Mischung zu verhindern. Die gesamte Anordnung verbleibt bei Raumtemperatur zur Aushärtung über 24 h. Eine verstärkende Nachaushärtung erfolgt anschließend bei 100°C über ebenfalls 24 h. Analog kann auch mit Rohrsegmenten aus gegossener SiAl10-Legierung oder aus keramischem ZnO:Al2O3 oder TiO2 verfahren werden.One or more tubes of indium tin oxide having an outer diameter of 160 mm, an inner diameter of 135 mm and a length of 100 mm are pushed onto a stainless steel carrier tube (see Example 1). The resulting bond gap is filled in succession for each sputter material tube with a mass of liquid silica and aluminum powder in a weight-based mixing ratio of 1: 1 at room temperature. The so-called bonding gap between the individual indium tin oxide tubes pushed one after the other onto the support tube is sealed in each case in order to prevent leakage of the silica-aluminum mixture. The entire assembly remains at room temperature to cure for 24 h. Reinforcing after-hardening then takes place at 100 ° C. for a further 24 h. Analogously, it is also possible to use pipe segments made from cast SiAl10 alloy or from ceramic ZnO: Al 2 O 3 or TiO 2 .

Beispiel 3:Example 3:

Sputtermaterial-Rohre entsprechend Beispiel 2 werden auf ein Edelstahlträgerrohr, ebenfalls wie in Beispiel 2, aufgeschoben. Als Verbindungsmasse wird eine wässrige alkalisch reagierende Lösung von Wasserglas mit Aluminiumpulver im Massenverhältnis 10:3 hergestellt. Die Verarbeitung dieser Verbindungsmasse erfolgt wie in Beispiel 2 angegeben.Sputter-tubes according to Example 2 are applied to a stainless steel support tube, also as in Example 2, deferred. As a compound becomes an aqueous alkaline solution of water glass with aluminum powder in mass ratio 10: 3 made. The processing of this compound compound takes place as indicated in Example 2.

ZITATE ENTHALTEN IN DER BESCHREIBUNGQUOTES INCLUDE IN THE DESCRIPTION

Diese Liste der vom Anmelder aufgeführten Dokumente wurde automatisiert erzeugt und ist ausschließlich zur besseren Information des Lesers aufgenommen. Die Liste ist nicht Bestandteil der deutschen Patent- bzw. Gebrauchsmusteranmeldung. Das DPMA übernimmt keinerlei Haftung für etwaige Fehler oder Auslassungen.This list The documents listed by the applicant have been automated generated and is solely for better information recorded by the reader. The list is not part of the German Patent or utility model application. The DPMA takes over no liability for any errors or omissions.

Zitierte PatentliteraturCited patent literature

  • - DE 202006018079 U1 [0002] - DE 202006018079 U1 [0002]
  • - EP 1561836 A1 [0002] EP 1561836 A1 [0002]
  • - DE 102006060512 A1 [0003] DE 102006060512 A1 [0003]
  • - DE 102005020250 A1 [0003] DE 102005020250 A1 [0003]
  • - DE 102005029221 A1 [0004] DE 102005029221 A1 [0004]
  • - DE 102004060423 A1 [0004] DE 102004060423 A1 [0004]

Claims (5)

Sputtertarget mit einem Trägerkörper und einem Sputtermaterial, wobei das Sputtermaterial mittels mindestens einer Verbindungsschicht auf dem Trägerkörper fixiert ist, dadurch gekennzeichnet, dass die Verbindungsschicht als Hauptbestandteil ihrer Bindephase mindestens ein anorganisches Oxid und/oder Silikat enthält.Sputtering target with a carrier body and a sputtering material, wherein the sputtering material is fixed by means of at least one connecting layer on the carrier body, characterized in that the connecting layer contains as the main constituent of its binder phase at least one inorganic oxide and / or silicate. Sputtertarget nach Anspruch 1, dadurch gekennzeichnet, dass die Verbindungsschicht mindestens ein Oxid und/oder Silikat auf Basis mindestens eines Elementes aus der Gruppe Si, Al, Zr, Mg, Fe, K, Ca, Na, enthält.Sputtering target according to claim 1, characterized in that in that the bonding layer comprises at least one oxide and / or silicate based on at least one element from the group Si, Al, Zr, Mg, Fe, K, Ca, Na, contains. Sputtertarget nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass die Verbindungsschicht zusätzlich elektrisch und/oder wärmeleitende Partikel und/oder Fasern enthält.Sputtering target according to claim 1 or 2, characterized that the connecting layer additionally electrically and / or contains thermally conductive particles and / or fibers. Sputtertarget, nach Anspruch 3, dadurch gekennzeichnet, dass die Partikel und/oder Fasern mindestens ein Material aus der Gruppe Ag, Al, C, Cu, Fe, Ni, Si, SiC aufweisen.Sputtering target according to claim 3, characterized that the particles and / or fibers at least one material from the Group Ag, Al, C, Cu, Fe, Ni, Si, SiC have. Sputtertarget nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, dass Trägerkörper und Sputtermaterial zusätzlich durch elektrisch leitende und/oder wärmeleitende Körper miteinander verbunden sind.Sputtering target according to one of claims 1 to 4, characterized in that carrier body and sputter material additionally by electrically conductive and / or thermally conductive bodies are interconnected.
DE102008046443A 2008-09-09 2008-09-09 Sputtering target comprises a carrier body, and a sputtering material, which is fixed by a connection layer on the carrier body, where the connection layer consists of inorganic oxide and/or silicate as main component of its binder phase Withdrawn DE102008046443A1 (en)

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DE102008046443A DE102008046443A1 (en) 2008-09-09 2008-09-09 Sputtering target comprises a carrier body, and a sputtering material, which is fixed by a connection layer on the carrier body, where the connection layer consists of inorganic oxide and/or silicate as main component of its binder phase

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DE102008046443A DE102008046443A1 (en) 2008-09-09 2008-09-09 Sputtering target comprises a carrier body, and a sputtering material, which is fixed by a connection layer on the carrier body, where the connection layer consists of inorganic oxide and/or silicate as main component of its binder phase

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103774108A (en) * 2014-01-26 2014-05-07 北京京东方显示技术有限公司 Coating device
DE102013216303A1 (en) 2013-08-16 2015-02-19 Heraeus Materials Technology Gmbh & Co. Kg Sputtering target, apparatus for attaching a sputtering target, method for detecting the release of a sputtering material and manufacturing method

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GB1325919A (en) * 1970-01-02 1973-08-08 Rca Corp Method of fabricating transparent conductors
EP1561836A1 (en) 2004-02-05 2005-08-10 Zentrum Für Material- und Umwelttechnik Gmbh Method for making a target.
DE102004060423A1 (en) 2004-12-14 2006-06-29 W.C. Heraeus Gmbh tube target
DE102005020250A1 (en) 2005-04-28 2006-11-02 W.C. Heraeus Gmbh Sputtering target, e.g. tubular target with carrier and sputtering material, useful in coating large surface substrates such as architectural glass or flat screen plates has free flowing heat and electricity
DE102005029221A1 (en) 2005-06-22 2006-12-28 W.C. Heraeus Gmbh Adhesive, useful for gluing conductive material, comprises an adhesive component e.g. epoxy resin, and fillers containing fibers or fiber-powder mixture, which are made of an electrically conductive material
DE202006018079U1 (en) 2006-03-02 2007-03-29 FNE Forschungsinstitut für Nichteisen-Metalle Freiberg GmbH Target arrangement used as a sputtering target in the production of heat resistant layers or solar protection layers on flat glass or plastic films comprises tubular support element and hollow cylindrical target made from target material
US20070205101A1 (en) * 2005-09-13 2007-09-06 Applied Materials, Inc. Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers
DE102006060512A1 (en) 2006-12-19 2008-06-26 W.C. Heraeus Gmbh Sputtertargetanordnung

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1325919A (en) * 1970-01-02 1973-08-08 Rca Corp Method of fabricating transparent conductors
EP1561836A1 (en) 2004-02-05 2005-08-10 Zentrum Für Material- und Umwelttechnik Gmbh Method for making a target.
DE102004060423A1 (en) 2004-12-14 2006-06-29 W.C. Heraeus Gmbh tube target
DE102005020250A1 (en) 2005-04-28 2006-11-02 W.C. Heraeus Gmbh Sputtering target, e.g. tubular target with carrier and sputtering material, useful in coating large surface substrates such as architectural glass or flat screen plates has free flowing heat and electricity
DE102005029221A1 (en) 2005-06-22 2006-12-28 W.C. Heraeus Gmbh Adhesive, useful for gluing conductive material, comprises an adhesive component e.g. epoxy resin, and fillers containing fibers or fiber-powder mixture, which are made of an electrically conductive material
US20070205101A1 (en) * 2005-09-13 2007-09-06 Applied Materials, Inc. Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers
DE202006018079U1 (en) 2006-03-02 2007-03-29 FNE Forschungsinstitut für Nichteisen-Metalle Freiberg GmbH Target arrangement used as a sputtering target in the production of heat resistant layers or solar protection layers on flat glass or plastic films comprises tubular support element and hollow cylindrical target made from target material
DE102006060512A1 (en) 2006-12-19 2008-06-26 W.C. Heraeus Gmbh Sputtertargetanordnung

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013216303A1 (en) 2013-08-16 2015-02-19 Heraeus Materials Technology Gmbh & Co. Kg Sputtering target, apparatus for attaching a sputtering target, method for detecting the release of a sputtering material and manufacturing method
WO2015022166A1 (en) * 2013-08-16 2015-02-19 Heraeus Materials Technology Gmbh & Co. Kg Sputtering target, device for fastening a sputtering target, method for recognizing the release of a sputtering material and production method
CN103774108A (en) * 2014-01-26 2014-05-07 北京京东方显示技术有限公司 Coating device

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