DE102005032790A1 - Non-ferrous metal e.g. liquid silicon, receiving, smelting and crystallizing container, has multifunctional coating provided on part of inner wall and including layer parts for influencing material characteristics of non-ferrous metals - Google Patents
Non-ferrous metal e.g. liquid silicon, receiving, smelting and crystallizing container, has multifunctional coating provided on part of inner wall and including layer parts for influencing material characteristics of non-ferrous metals Download PDFInfo
- Publication number
- DE102005032790A1 DE102005032790A1 DE102005032790A DE102005032790A DE102005032790A1 DE 102005032790 A1 DE102005032790 A1 DE 102005032790A1 DE 102005032790 A DE102005032790 A DE 102005032790A DE 102005032790 A DE102005032790 A DE 102005032790A DE 102005032790 A1 DE102005032790 A1 DE 102005032790A1
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- silicon
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
- C04B41/5035—Silica
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/00241—Physical properties of the materials not provided for elsewhere in C04B2111/00
- C04B2111/00405—Materials with a gradually increasing or decreasing concentration of ingredients or property from one layer to another
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Details Of Rigid Or Semi-Rigid Containers (AREA)
Abstract
Description
Die Erfindung betrifft einen Behälter zum Schmelzen und/oder Kristallisieren von Nichteisenmetallen, insbesondere von Silizium. Die Erfindung betrifft ferner ein Verfahren zur Herstellung eines erfindungsgemäßen Behälters. Die Erfindung betrifft des weiteren die Verwendung eines erfindungsgemäßen Behälters zur Aufnahme von Siliziumschmelzen.The The invention relates to a container for melting and / or crystallizing non-ferrous metals, in particular of silicon. The invention further relates to a process for the preparation a container according to the invention. The The invention further relates to the use of a container according to the invention for Absorption of silicon melts.
Aus
der
Der Erfindung liegt die Aufgabe zugrunde, einen Behälter zum Schmelzen und/oder Kristallisieren von Nichteisenmetallen sowie ein Verfahren zur Herstellung eines derartigen Behälters zu schaffen, bei dem die Güte von aus dem Nichteisenmetall hergestellten elektronischen Bauelementen verbessert wird.Of the Invention is based on the object, a container for melting and / or Crystallization of non-ferrous metals and a method of manufacture such a container to create, where the goodness of non-ferrous metal electronic components is improved.
Diese Aufgabe wird durch die Merkmale der unabhängigen Ansprüche 1 und 12 gelöst. Der Kern der Erfindung besteht darin, dass zumindest auf einem Teil der Innenwand des Behälters mindestens eine multifunktionale Beschichtung angeordnet ist. Die mindestens eine multifunktionale Beschichtung weist mindestens einen Schicht-Bestandteil zur Beeinflussung einer Materialeigenschaft des in dem Behälter aufgenommenen Nichteisenmetalls, insbesondere des Siliziums auf.These The object is achieved by the features of independent claims 1 and 12 solved. The essence of the invention is that at least on one part the inner wall of the container at least one multifunctional coating is arranged. The at least one multifunctional coating has at least one Layer component for influencing a material property in the container recorded non-ferrous metal, in particular of silicon.
Weitere vorteilhafte Ausgestaltungen der Erfindung ergeben sich aus den Unteransprüchen.Further advantageous embodiments of the invention will become apparent from the Dependent claims.
Zusätzliche Merkmale und Einzelheiten der Erfindung ergeben sich aus der Beschreibung mehrerer Ausführungsbeispiele anhand der Zeichnungen. Es zeigen:additional Features and details of the invention will become apparent from the description several embodiments based on the drawings. Show it:
Nachfolgend
wird unter Bezugnahme auf die
Die
multifunktionale Beschichtung
Die
Schicht
Mittels
der Schicht-Bestandteile
Als
Schicht-Bestandteil
Die
Beschichtung
Das
pulverförmige
Siliziumnitrid besteht zu mindestens 0,1 Gew.-%, insbesondere zu
mindestens 2 Gew.-%, und insbesondere zu mindestens 10 Gew.-%, aus
kristallografischer Beta-Phase. Die Beta-Phase stellt die Hochtemperatur-Modifikation
des Siliziumnitrids dar und ermöglicht
eine hohe thermo-mechanische Stabilität der Beschichtung
Das pulverförmige Siliziumnitrid weist Partikel mit einer durchschnittlichen Partikelgröße von maximal 50 μm, insbesondere von maximal 10 μm, und insbesondere von maximal 5 μm, auf. Vorzugsweise weist das pulverförmige Siliziumnitrid einen Sauerstoffgehalt von 0,3 Gew.-% bis maximal 5 Gew.-% und ein Verhältnis von Länge zu Durchmesser der Partikel von kleiner als 10 auf.The powdery Silicon nitride has particles with an average particle size of maximum 50 μm, in particular of a maximum of 10 μm, and in particular of a maximum of 5 μm, on. Preferably, the powdery silicon nitride has an oxygen content from 0.3 wt% to at most 5 wt% and a length to diameter ratio of the particles from less than 10 to.
Das hochreine, pulverförmige Siliziumnitrid weist einen Siliziumdioxidgehalt von maximal 50 Gew.-%, einen Alkali- und/oder Erdalkalimetallgehalt von maximal 1000 ppm und/oder einen Fluoridgehalt von maximal 2000 ppm und/oder einen Chloridgehalt von maximal 2000 ppm und/oder einen Gesamtkohlenstoffgehalt von maximal 2000 ppm und/oder einen Gehalt von Übergangsmetallen von jeweils maximal 500 ppm auf.The high purity, powdery Silicon nitride has a maximum silicon dioxide content of 50% by weight, an alkali and / or alkaline earth metal content of at most 1000 ppm and / or a fluoride content of at most 2000 ppm and / or a Chloride content of at most 2000 ppm and / or a total carbon content of a maximum of 2000 ppm and / or a transition metal content of each maximum 500 ppm.
Als
Schicht-Bestandteil
Die
Beschichtung
Zur
Verbesserung der Reinheit des Siliziums
Weiterhin
können
die Schicht-Bestandteile
Die
Schicht-Bestandteile
Beispielsweise
kann in
Das
Aufbringen der multifunktionalen Beschichtung
Der
Behälter
Nachfolgend
wird unter Bezugnahme auf
Wie
in
In
Das
Aufbringen der Schichten
Der
Behälter-Grundkörper
Nachfolgend
wird unter Bezugnahme auf
Die
Beschichtungen
In
Das
Aufbringen der Beschichtungen
Durch das erfindungsgemäße Herstellungsverfahren ist es möglich, Behälter mit Beschichtungen bereitzustellen, die gemeinsam und/oder einzeln multifunktional ausgebildet sind. Die Beschichtungen erlauben eine gezielte Beeinflussung der Materialeigenschaften des in dem Behälter aufgenommenen Nichteisenmetalls, insbesondere des Siliziums. Durch die gezielte Beeinflussung der Materialeigenschaften ist es einerseits möglich, Silizium mit einer höheren Güte zu erzeugen und andererseits nachgelagerte Schritte bei der Herstellung von elektronischen Bauelementen, beispielsweise die Einbringung von Dotierelementen, in den Kristallisierungsvorgang des Siliziums einzubeziehen. Der Herstellungsprozess von elektronischen Bauelementen, beispielsweise für die Photovoltaik, wird somit effizienter und kostengünstiger und die Güte der elektronischen Bauelemente verbessert.By the production process according to the invention Is it possible, container to provide coatings that together and / or individually multifunctional are formed. The coatings allow a targeted influence the material properties of the non-ferrous metal accommodated in the container, in particular of silicon. By deliberately influencing the On the one hand, material properties make it possible to produce silicon with a higher quality and, on the other hand, downstream steps in the production of electronic components, such as the introduction of Doping elements to include in the crystallization process of the silicon. The manufacturing process of electronic components, for example for the Photovoltaic, thus becomes more efficient and less expensive and the quality of electronic components improved.
Für alle Ausführungsbeispiele gilt: Jede Beschichtung kann eine oder mehrere Schichten und jede Schicht wiederum eine oder mehrere Lagen aufweisen. Jede Schicht kann einen oder mehrere Schicht-Bestandteile enthalten, wobei unterschiedliche Schichten zumindest einen unterschiedlichen Schicht-Bestandteil aufweisen und insbesondere optisch mittels bekannter Analyseverfahren voneinander abgrenzbar sind. Die Schichten können an ihren Grenzen scharf abgrenzbar sein oder fließend ineinander übergehen. Die Lagen einer Schicht weisen gleiche Schicht-Bestandteile auf. Jeder Schicht-Bestandteil kann in den unterschiedlichen Lagen eine gleichbleibende oder variierende Konzentration aufweisen. Mittels einer variierenden Konzentration eines Schicht-Bestandteils in den einzelnen Lagen ist die Ausbildung eines Konzentrationsgradienten in einer Schicht möglich. Die Beschichtungen und/oder die Schichten und/oder die Schicht-Bestandteile können chemisch und/oder physikalisch unterschiedlich ausgebildet sein. Unter chemisch unterschiedlich werden insbesondere unterschiedliche chemische Elemente und unterschiedliche chemische Verbindungen verstanden. Unter physikalisch unterschiedlich werden insbesondere unterschiedliche Phasen, Kristallorientierungen, optisch trennbare Lagen und Kristallstrukturen verstanden. Der Behälter-Grundkörper kann eine gebrannte Kokille oder ein Kokillen-Grünling sein, wobei der Kokillen-Grünling zumindest nach dem Aufbringen einer Lage und/oder einer Schicht und/oder einer Beschichtung gebrannt wird.For all embodiments Each coating can have one or more layers and each Layer again have one or more layers. every layer may contain one or more layer constituents, with different ones Layers at least one different layer component and in particular optically by known analysis methods can be distinguished from each other. The layers can be sharp at their boundaries be delimited or fluent merge. The layers of a layer have the same layer constituents. Each layer component can be a consistent one in different layers or varying concentration. By means of a varying Concentration of a layer component in the individual layers is the formation of a concentration gradient in a shift possible. The coatings and / or the layers and / or the layer components can be formed chemically and / or physically different. Among chemically different in particular different understood chemical elements and different chemical compounds. Physically different are, in particular, different ones Phases, crystal orientations, optically separable layers and crystal structures Understood. The container body can a fired mold or a green mold, wherein the green mold at least after applying a layer and / or a layer and / or a Coating is fired.
Claims (15)
Priority Applications (1)
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DE102005032790A DE102005032790A1 (en) | 2005-06-06 | 2005-07-14 | Non-ferrous metal e.g. liquid silicon, receiving, smelting and crystallizing container, has multifunctional coating provided on part of inner wall and including layer parts for influencing material characteristics of non-ferrous metals |
Applications Claiming Priority (3)
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DE102005026138 | 2005-06-06 | ||
DE102005026138.8 | 2005-06-06 | ||
DE102005032790A DE102005032790A1 (en) | 2005-06-06 | 2005-07-14 | Non-ferrous metal e.g. liquid silicon, receiving, smelting and crystallizing container, has multifunctional coating provided on part of inner wall and including layer parts for influencing material characteristics of non-ferrous metals |
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DE102005032790A1 true DE102005032790A1 (en) | 2006-12-07 |
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DE102005032790A Ceased DE102005032790A1 (en) | 2005-06-06 | 2005-07-14 | Non-ferrous metal e.g. liquid silicon, receiving, smelting and crystallizing container, has multifunctional coating provided on part of inner wall and including layer parts for influencing material characteristics of non-ferrous metals |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010000687A1 (en) | 2010-01-05 | 2011-07-07 | SolarWorld Innovations GmbH, 09599 | Method for producing silicon-blocks, comprises providing a crucible for receiving a silicon-melt, having a bottom and side walls connected with the bottom, and subjecting germs on an inner side of the bottom of the crucible |
WO2011098319A1 (en) | 2010-02-15 | 2011-08-18 | H.C. Starck Gmbh | Crucible for photovoltaics |
WO2012007653A1 (en) * | 2010-07-16 | 2012-01-19 | Apollon Solar | Method for doping a semiconductor material |
WO2012025905A1 (en) * | 2010-08-27 | 2012-03-01 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Crucible for solidifying a silicon ingot |
DE102011005503A1 (en) * | 2011-03-14 | 2012-09-20 | Solarworld Innovations Gmbh | Device useful for producing silicon blocks comprises container for receiving silicon melt, covering for partially covering internal space, purge gas device for producing purge gas flow and means for slowing down exhaust steam steam-kinetics |
DE102012019519A1 (en) | 2012-10-05 | 2014-04-10 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Making diffusion-inhibiting coating on inner surface of ceramic/porous substrate e.g. crucible by applying precursor material with polysilazane compound on surface of substrate, and heat treating material infiltrated into substrate |
CN104185696A (en) * | 2012-01-31 | 2014-12-03 | 原子能及能源替代委员会 | Crucible for solidifying silicon ingot |
CN105158290A (en) * | 2015-08-07 | 2015-12-16 | 欧优科学仪器南京有限公司 | Sealing crucible for thermal analysis and manufacturing method of sealing crucible |
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DE102005029039A1 (en) * | 2004-07-08 | 2006-02-02 | Deutsche Solar Ag | Production of non-stick ingot mold for non-metals involves coating a container with a silicon nitride powder-containing layer which is then burned |
-
2005
- 2005-07-14 DE DE102005032790A patent/DE102005032790A1/en not_active Ceased
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US4102666A (en) * | 1968-02-22 | 1978-07-25 | Heraeus-Schott Quarzschmelze Gmbh | Method of surface crystallizing quartz |
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Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010000687A1 (en) | 2010-01-05 | 2011-07-07 | SolarWorld Innovations GmbH, 09599 | Method for producing silicon-blocks, comprises providing a crucible for receiving a silicon-melt, having a bottom and side walls connected with the bottom, and subjecting germs on an inner side of the bottom of the crucible |
WO2011098319A1 (en) | 2010-02-15 | 2011-08-18 | H.C. Starck Gmbh | Crucible for photovoltaics |
DE102010008089A1 (en) | 2010-02-15 | 2011-09-08 | H.C. Starck Gmbh | Crucible for photovoltaic |
US8840861B2 (en) | 2010-02-15 | 2014-09-23 | H. C. Starck Gmbh | Crucible for photovoltaics |
WO2012007653A1 (en) * | 2010-07-16 | 2012-01-19 | Apollon Solar | Method for doping a semiconductor material |
FR2962849A1 (en) * | 2010-07-16 | 2012-01-20 | Apollon Solar | METHOD FOR DOPING A SEMICONDUCTOR MATERIAL |
EA023641B1 (en) * | 2010-07-16 | 2016-06-30 | Аполлон Солар | Method for doping a semiconductor material |
US8900981B2 (en) | 2010-07-16 | 2014-12-02 | Apollon Solar | Method for doping a semiconductor material |
CN103080028A (en) * | 2010-08-27 | 2013-05-01 | 原子能与替代能源委员会 | Crucible for solidifying a silicon ingot |
FR2964117A1 (en) * | 2010-08-27 | 2012-03-02 | Commissariat Energie Atomique | CREUSET FOR SOLIDIFICATION OF SILICON INGOT |
WO2012025905A1 (en) * | 2010-08-27 | 2012-03-01 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Crucible for solidifying a silicon ingot |
CN103080028B (en) * | 2010-08-27 | 2016-08-24 | 原子能与替代能源委员会 | For solidifying the crucible of silicon ingot |
DE102011005503A1 (en) * | 2011-03-14 | 2012-09-20 | Solarworld Innovations Gmbh | Device useful for producing silicon blocks comprises container for receiving silicon melt, covering for partially covering internal space, purge gas device for producing purge gas flow and means for slowing down exhaust steam steam-kinetics |
DE102011005503B4 (en) * | 2011-03-14 | 2018-11-15 | Solarworld Industries Gmbh | Apparatus and method for producing silicon blocks |
CN104185696A (en) * | 2012-01-31 | 2014-12-03 | 原子能及能源替代委员会 | Crucible for solidifying silicon ingot |
DE102012019519A1 (en) | 2012-10-05 | 2014-04-10 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Making diffusion-inhibiting coating on inner surface of ceramic/porous substrate e.g. crucible by applying precursor material with polysilazane compound on surface of substrate, and heat treating material infiltrated into substrate |
CN105158290A (en) * | 2015-08-07 | 2015-12-16 | 欧优科学仪器南京有限公司 | Sealing crucible for thermal analysis and manufacturing method of sealing crucible |
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