DE10147927B8 - Poly-o-hydroxyamide, Polybenzoxazole, elektronisches Bauteil sowie Verfahren zu ihrer Herstellung - Google Patents

Poly-o-hydroxyamide, Polybenzoxazole, elektronisches Bauteil sowie Verfahren zu ihrer Herstellung Download PDF

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Publication number
DE10147927B8
DE10147927B8 DE10147927A DE10147927A DE10147927B8 DE 10147927 B8 DE10147927 B8 DE 10147927B8 DE 10147927 A DE10147927 A DE 10147927A DE 10147927 A DE10147927 A DE 10147927A DE 10147927 B8 DE10147927 B8 DE 10147927B8
Authority
DE
Germany
Prior art keywords
hydroxyamides
polybenzoxazoles
poly
processes
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE10147927A
Other languages
English (en)
Other versions
DE10147927C1 (de
Inventor
Andreas Dr. Walter
Recai Dr. Sezi
Klaus Dr. Lowack
Anna Maltenberger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Polaris Innovations Ltd
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to DE10147927A priority Critical patent/DE10147927B8/de
Priority to US10/261,034 priority patent/US6900284B2/en
Application granted granted Critical
Publication of DE10147927C1 publication Critical patent/DE10147927C1/de
Publication of DE10147927B8 publication Critical patent/DE10147927B8/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/303—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups H01B3/38 or H01B3/302
    • H01B3/305—Polyamides or polyesteramides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Polyamides (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
DE10147927A 2001-09-28 2001-09-28 Poly-o-hydroxyamide, Polybenzoxazole, elektronisches Bauteil sowie Verfahren zu ihrer Herstellung Expired - Fee Related DE10147927B8 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE10147927A DE10147927B8 (de) 2001-09-28 2001-09-28 Poly-o-hydroxyamide, Polybenzoxazole, elektronisches Bauteil sowie Verfahren zu ihrer Herstellung
US10/261,034 US6900284B2 (en) 2001-09-28 2002-09-30 Poly-o-hydroxyamides, polybenzoxazoles, processes for producing poly-o-hydroxyamides, processes for producing polybenzoxazoles, dielectrics including a polybenzoxazole, electronic components including the dielectrics, and processes for manufacturing the electronic components

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10147927A DE10147927B8 (de) 2001-09-28 2001-09-28 Poly-o-hydroxyamide, Polybenzoxazole, elektronisches Bauteil sowie Verfahren zu ihrer Herstellung

Publications (2)

Publication Number Publication Date
DE10147927C1 DE10147927C1 (de) 2003-03-06
DE10147927B8 true DE10147927B8 (de) 2004-07-08

Family

ID=7700665

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10147927A Expired - Fee Related DE10147927B8 (de) 2001-09-28 2001-09-28 Poly-o-hydroxyamide, Polybenzoxazole, elektronisches Bauteil sowie Verfahren zu ihrer Herstellung

Country Status (2)

Country Link
US (1) US6900284B2 (de)
DE (1) DE10147927B8 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10228769A1 (de) 2002-06-27 2004-02-05 Infineon Technologies Ag Isoliermaterial für Aluminium und Kupfermetallisierungen
DE10244649B4 (de) * 2002-09-25 2006-02-02 Infineon Technologies Ag Verfahren zur Herstellung einer Klebeverbindung
US8920667B2 (en) * 2013-01-30 2014-12-30 Cabot Microelectronics Corporation Chemical-mechanical polishing composition containing zirconia and metal oxidizer
CN103554050B (zh) * 2013-11-07 2015-12-30 大连理工大学 一种苯并噁唑化合物的合成方法
KR101788093B1 (ko) * 2014-03-19 2017-10-19 제일모직 주식회사 모노머, 상기 모노머를 포함하는 하드마스크 조성물 및 상기 하드마스크 조성물을 사용하는 패턴형성방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997010193A1 (en) * 1995-09-12 1997-03-20 The Dow Chemical Company Ethynyl substituted aromatic compounds, synthesis, polymers and uses thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0761717B1 (de) * 1995-08-31 2001-06-06 Infineon Technologies AG Verfahren zur Herstellung von Poly-o-hydroxyamiden und Poly-o-mercaptoamiden
DE59711315D1 (de) * 1996-12-11 2004-03-25 Infineon Technologies Ag Herstellung von Polybenzoxazol- und Polybenzothiazol-Vorstufen
EP0905170B1 (de) * 1997-09-24 2013-10-30 Qimonda AG Polybenzoxazol- und Polybenzothiazol-Vorstufen
DE59814201D1 (de) * 1997-09-24 2008-05-15 Infineon Technologies Ag Polybenzoxazol- und Polybenzothiazol-Vorstufen
US6384182B2 (en) * 1999-04-09 2002-05-07 Central Glass Company, Limited Fluorine-containing polybenzoxazole
JP2000290374A (ja) * 1999-04-09 2000-10-17 Central Glass Co Ltd 含フッ素ポリベンゾオキサゾール
DE10011608A1 (de) 2000-03-10 2001-10-18 Infineon Technologies Ag Bis-o-aminophenole und o-Aminophenolcarbonsäuren

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997010193A1 (en) * 1995-09-12 1997-03-20 The Dow Chemical Company Ethynyl substituted aromatic compounds, synthesis, polymers and uses thereof

Also Published As

Publication number Publication date
US20030176623A1 (en) 2003-09-18
US6900284B2 (en) 2005-05-31
DE10147927C1 (de) 2003-03-06

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Legal Events

Date Code Title Description
8100 Publication of the examined application without publication of unexamined application
8304 Grant after examination procedure
8364 No opposition during term of opposition
8396 Reprint of erroneous front page
8327 Change in the person/name/address of the patent owner

Owner name: QIMONDA AG, 81739 MUENCHEN, DE

R081 Change of applicant/patentee

Owner name: INFINEON TECHNOLOGIES AG, DE

Free format text: FORMER OWNER: QIMONDA AG, 81739 MUENCHEN, DE

Owner name: POLARIS INNOVATIONS LTD., IE

Free format text: FORMER OWNER: QIMONDA AG, 81739 MUENCHEN, DE

R081 Change of applicant/patentee

Owner name: POLARIS INNOVATIONS LTD., IE

Free format text: FORMER OWNER: INFINEON TECHNOLOGIES AG, 85579 NEUBIBERG, DE

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee