DD64047A1 - PROCESS FOR THE PRODUCTION OF HIGH-PURITY, PARTICULARLY PHOSPHORARMIC SILICON - Google Patents

PROCESS FOR THE PRODUCTION OF HIGH-PURITY, PARTICULARLY PHOSPHORARMIC SILICON

Info

Publication number
DD64047A1
DD64047A1 DD12736867A DD12736867A DD64047A1 DD 64047 A1 DD64047 A1 DD 64047A1 DD 12736867 A DD12736867 A DD 12736867A DD 12736867 A DD12736867 A DD 12736867A DD 64047 A1 DD64047 A1 DD 64047A1
Authority
DD
German Democratic Republic
Prior art keywords
phosphorarmic
purity
silicon
production
phosphorarmic silicon
Prior art date
Application number
DD12736867A
Other languages
German (de)
Inventor
Erich Dr Wolf
Manfred Ing Schönherr
Rolf Ing Teichmann
Claus Herbst
Manfred Seidler
Original Assignee
Erich Dr Wolf
Manfred Ing Schönherr
Rolf Ing Teichmann
Claus Herbst
Manfred Seidler
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Erich Dr Wolf, Manfred Ing Schönherr, Rolf Ing Teichmann, Claus Herbst, Manfred Seidler filed Critical Erich Dr Wolf
Priority to DD12736867A priority Critical patent/DD64047A1/en
Publication of DD64047A1 publication Critical patent/DD64047A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
DD12736867A 1967-09-25 1967-09-25 PROCESS FOR THE PRODUCTION OF HIGH-PURITY, PARTICULARLY PHOSPHORARMIC SILICON DD64047A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DD12736867A DD64047A1 (en) 1967-09-25 1967-09-25 PROCESS FOR THE PRODUCTION OF HIGH-PURITY, PARTICULARLY PHOSPHORARMIC SILICON

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DD12736867A DD64047A1 (en) 1967-09-25 1967-09-25 PROCESS FOR THE PRODUCTION OF HIGH-PURITY, PARTICULARLY PHOSPHORARMIC SILICON

Publications (1)

Publication Number Publication Date
DD64047A1 true DD64047A1 (en) 1968-10-05

Family

ID=256880

Family Applications (1)

Application Number Title Priority Date Filing Date
DD12736867A DD64047A1 (en) 1967-09-25 1967-09-25 PROCESS FOR THE PRODUCTION OF HIGH-PURITY, PARTICULARLY PHOSPHORARMIC SILICON

Country Status (1)

Country Link
DD (1) DD64047A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013204730A1 (en) 2013-03-18 2014-09-18 Wacker Chemie Ag Method of depositing polycrystalline silicon
DE102015200070A1 (en) 2015-01-07 2016-07-07 Wacker Chemie Ag Reactor for the deposition of polycrystalline silicon
EP3476803A4 (en) * 2016-06-23 2020-02-19 Mitsubishi Materials Corporation Polycrystalline silicon rod and method for producing same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013204730A1 (en) 2013-03-18 2014-09-18 Wacker Chemie Ag Method of depositing polycrystalline silicon
WO2014146876A1 (en) 2013-03-18 2014-09-25 Wacker Chemie Ag Polycrystalline silicon deposition method
US9738530B2 (en) 2013-03-18 2017-08-22 Wacker Chemie Ag Polycrystalline silicon deposition method
DE102015200070A1 (en) 2015-01-07 2016-07-07 Wacker Chemie Ag Reactor for the deposition of polycrystalline silicon
EP3476803A4 (en) * 2016-06-23 2020-02-19 Mitsubishi Materials Corporation Polycrystalline silicon rod and method for producing same

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