DD149972A1 - HISTORIZED RECORDING MEDIUM FOR MICROSTRUCTURES - Google Patents
HISTORIZED RECORDING MEDIUM FOR MICROSTRUCTURES Download PDFInfo
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- DD149972A1 DD149972A1 DD22011280A DD22011280A DD149972A1 DD 149972 A1 DD149972 A1 DD 149972A1 DD 22011280 A DD22011280 A DD 22011280A DD 22011280 A DD22011280 A DD 22011280A DD 149972 A1 DD149972 A1 DD 149972A1
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- 239000000126 substance Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 238000010521 absorption reaction Methods 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
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- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
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- 230000000694 effects Effects 0.000 abstract description 9
- 230000003287 optical effect Effects 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000007769 metal material Substances 0.000 abstract description 3
- 230000002427 irreversible effect Effects 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000005259 measurement Methods 0.000 abstract 1
- 238000004377 microelectronic Methods 0.000 abstract 1
- 229920001169 thermoplastic Polymers 0.000 abstract 1
- 239000004416 thermosoftening plastic Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 9
- 239000011521 glass Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 2
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- 238000000034 method Methods 0.000 description 2
- 206010073306 Exposure to radiation Diseases 0.000 description 1
- 101100518501 Mus musculus Spp1 gene Proteins 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
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- 239000012815 thermoplastic material Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B7/2578—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B7/2433—Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/2571—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 14 elements except carbon (Si, Ge, Sn, Pb)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25715—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing oxygen
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2531—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising glass
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- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Photoreceptors In Electrophotography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Geschichtete Aufzeichnungsmedien fuer die irreversible Erzeugung von Mikrostrukturen, beispielsweise zum Speichern digitaler Informationen, zur Herstellung von Schablonen, Rastermaszstaeben und optischen Bauelementen auf der Grundlage von Interferenz und Beugung, zur Erzeugung von Funktionselementen der Mikroelektronik und der integrierten Optik, z. Programmierung spezieller Halbleiterspeicher durch Unterbrechung schmelzbarer Mikro-Kontaktbruecken und anderes. Insbesondere kann es sich um metallische Materialien oder absorbierende fotoempfindliche und thermoplastische Substanzen auf geeigneten Unterlagen handeln. Ziel der Erfindung ist eine Anordnung des Aufzeichnungsmediums und seiner optischen Umgebung, durch welche die Stoereffekte, die von der zur Strukturierung benoetigten Strahlung herruehren koennen, beseitigt oder reduziert werden. Das geschieht im wesentlichen durch die gemaesz den Erfindungsanspruechen vorgenommene Bemessung der optischen Konstanten des Aufzeichnungsmediums selbst und dessen erfindungsgemaesz strukturierte und optisch bemessene Unterlage.Layered recording media for the irreversible generation of microstructures, for example for storing digital information, for the production of stencils, rasters and optical components based on interference and diffraction, for the generation of functional elements of microelectronics and integrated optics, e.g. Programming special semiconductor memory by interrupting fusible micro-contact bridges and other. In particular, they may be metallic materials or absorptive photosensitive and thermoplastic substances on suitable substrates. The aim of the invention is an arrangement of the recording medium and its optical environment, by means of which the interference effects, which may result from the radiation required for structuring, are eliminated or reduced. This is done essentially by the measurement of the optical constants of the recording medium itself and its inventively structured and optically dimensioned base made in accordance with the invention.
Description
j, Geschichtetes Aufzeichnungsmedium für Mikrostrukturenj, Layered Recording Medium for Microstructures
Anwendungsgebiet der Erfindung;Field of application of the invention;
Die Erfindung betrifft geschichtete Aufzeichnungsmedien für die irreversible Erzeugung von Mikrostrukturen, beispielsweise zum Speichern digitaler Informationen, zur Herstellung von Schablonen, Rastermaßstäben und optischen Bauelementen auf der Grundlage von Interferenz und Beu-, gung, zur Erzeugung von Punktionselementen der Mikro-The invention relates to layered recording media for the irreversible generation of microstructures, for example for storing digital information, for the production of stencils, grid scales and optical components based on interference and buoyancy, for generating puncturing elements of microstructures.
10. elektronik und der integrierten Optik, zur Programmierung spezieller Halbleiterspeicher durch Unterbrechung schmelzbarer Mikro-Kontaktbrücken und anderes·10. electronics and integrated optics, for programming special semiconductor memories by interrupting fusible micro-contact bridges and other ·
Charakteristik der bekannten technischen Lösungen!Characteristic of the known technical solutions!
»e=i1 ιιιί nmaiimriiiiii ι im iri и.іі ι »ι-11 «ι ι Wiini ι ιιι ι Ш и чип. ium iwni ііиииі ι mi и ч ι mum іиі ι« ιι »ιι ιΐ шипим»E = i1 ιιιί nmaiimriiiiii ι in iri иi.іі ι» ι-11 «ιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιι ium iwni ііиииі ι mi и ч ι mum іиі ιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιιις
Es sind Anordnungen zur Erzeugung von Mikrostrukturen be- -)5 kannt, wobei die Strukturen in Form von Inhomogenitäten durch lokale Einwirkung von Strahlungsenergie auf geeig~ nete Materialien hergestellt ^A!erden können. So wird zum Beispiel aus Metalloberflächen bzw« Metallschichten metallisches Material in Mikrobereichen durch Strahlungsabsorption verdampft oder es werden durch Bestrahlung fotoempfindlicher bzw* thermoplastischer Materialien Inhomogenitäten in der Materialstruktur erzeugt und über nachfolgende physikalische und/oder chemische Hilfsprozesse die gewünschten Mikrostrukturen entwickelteArrangements for producing microstructures are known, in which the structures can be produced in the form of inhomogeneities by local action of radiant energy on suitable materials. Thus, for example, metal material in metal areas or metal layers is vaporized by radiation absorption in micro-regions or inhomogeneities in the material structure are generated by irradiation of photosensitive or thermoplastic materials and the desired microstructures are developed via subsequent physical and / or chemical auxiliary processes
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Dabei können vor allem bei metallischen Materialien, zum Beispiel auf Grund der hohen Wärmeleitung, unerwünschte .Strukturverbreiterungen oder wallartige Aufwerfungen an den Strukturrändern und ein unerwünschtes "Ausheilen" der erzeugten Mikrostrukturen entstehen oder vorwiegend bei Substanzen mit relativ kleinem Absorptionskoeffizienten, störende Interferenz- und Beugungseffekte auftreten. Diese und andere mit der Strahlungseinwirkung verbundene Störeffekte können bei bekannten technischen Lösungen die reproduzierbare Erzeugung von Mikrostrukturen, insbesondere von Strukturen extrem kleiner Abmessungen, empfindlich behindern,,In particular, in the case of metallic materials, for example because of the high heat conduction, unwanted .Wildstrukturverbreiterungen or wall-like Aufwerfungen to the structural states and an undesirable "annealing" of the microstructures produced arise or predominantly occur in substances with relatively low absorption coefficient, interfering interference and diffraction effects , These and other interference effects associated with the radiation effect can in known technical solutions, the reproducible production of microstructures, especially structures of extremely small dimensions, sensitive ,,
Ziel r .CLeJP1 Er findung S1 :Z iel r .CLeJP 1 invention S 1 :
Ziel der Erfindung sind Anordnungen, in welchen die Störeffekte, die von der zur Strukturierung verwendeten -Strahlung verursacht werden, verhindert oder zumindest reduziert werden.»The aim of the invention are arrangements in which the disturbing effects caused by the radiation used for structuring are prevented or at least reduced.
Die erfindungsgemäße Anordnung besteht aus einer Folge planparalleler Schichten, die so bemessen sind-, daß eine Absorptionsschicht, in welcher die Mikrostrukturie rung erfolgt j trotz nur geringer Schichtdicke eine relativ hohe effektive Absorption aufweist, wodurch eine hohe Volumendichte der absorbierenden Strahlungsleistung und damit gegenüber bekannten technischen Lösungen kurze Bestrahlungszeiten oder geringe Strahlungsleistungen sowie, insbesondere bei metallischen Absorptionsschichten, eine geringe laterale Wärmeleitung ermöglicht werden«The arrangement according to the invention consists of a series of plane-parallel layers, which are dimensioned so that an absorption layer in which the Mikrostrukturie tion takes place j despite only a small layer thickness has a relatively high effective absorption, creating a high volume density of the absorbing radiation power and thus over known technical Solutions short irradiation times or low radiation powers and, in particular with metallic absorption layers, a low lateral heat conduction are possible «
Die Aufgabe wird gemäß der Erfindung dadurch gelöst, daß hinter der Absorptionsschicht eine Interferenzschichtenfolge rait A//4~Schichten abwechselnd niedriger und hoher Brechungszahlen angeordnet ist, was gegenüber bekannten technischen Lösungen» bei denen die Ab- sorptionsschicht zum Beispiel auf eine GlasunterlageThe object is achieved according to the invention in that behind the absorption layer an interference layer sequence is arranged with layers of alternating low and high refractive indices, in contrast to known technical solutions in which the absorption layer is applied, for example, to a glass base
,. з - .Л £ о ιIi. з - .Л £ о ιIi
aufgebracht ist, eine wesentlich verminderte Strahlungsdurchlässigkeit, eine wesentlich verminderte Strahlungsreflexion und damit eine wesentlich erhöhte effektive Absorption der auftreffenden elektromagnetischen Strablung der Wellenlänge Л. bewirkt. Die erwünschte geringe Absorptionsschichtdicke (bei zugleich hoher Absorption) erfordert gemäß der Erfindung angenähert die Erfüllung der Bedingungen η -1 Ξ к ~ η und d =Л/4 У. nk, wobei η, к und d Brechungszahl, Absorptionskoeffizient und Dicke der Absorptionsschicht sind* Dabei wird der erwünschte Effekt um so besser realisiert, je größer die Anzahl der nachfolgenden einzelnen Interferenzschichtbrechungszahlen ist· Doch ist auch bei extremer Reduzierung der Interferenzschichtanzahl immer noch mit einem deutlichen Effekt zu rechnen, so daß auch die Anwendung stark abgerüsteter Interferenzschicht-. systeme Gegenstand der Erfindung ist«.is applied, a significantly reduced radiation transmission, a significantly reduced radiation reflection and thus a significantly increased effective absorption of the incident electromagnetic Strablung the wavelength Л. causes. The desired low absorption layer thickness (at the same time high absorption) according to the invention requires approximately the fulfillment of the conditions η -1 Ξ κ ~ η and d = / / 4 У. nk, where η, к and d are the refractive index, absorption coefficient and thickness of the absorption layer. In this case, the greater the number of subsequent individual interference layer refraction numbers, the better the desired effect. However, even with an extreme reduction in the number of interference layers, there is still a clear effect Effect to be expected, so that the application of heavily disarmed interference layer. The subject of the invention is «.
Bei Substanzen mit relativ kleinen Absorptionskoeffizienten ist es zweckmäßig, die Wirkung der Absorptionsschicht und die der ersten Interferenzschicht(en) in einer Schicht zu vereinen. Dies geschieht gemäß der Erfindung dadurchs daß die Absorptionsschicht selbst als ш . λ /4-Schicht (m = 1, 2, 3 .·«)$ das heißt mit der geometrischen Schichtdicke 2 = m . Λ /4-n (n = Brechungszahl) ausgebildet wird* Dabei muß, wie nähere Überlegungen zeigen, die Brechzabl-alternierende Interferenzscbichtenfolge bei geraden m mit einer Interferenzschicht niedriger Brechungszahl und bei ungeraden m mit einer Interferenzschicht hoher Brechungszahl beginnen« Wie mathematische Überlegungen weiter zeigen, wird die erwartete Wirkung einer solchen erfindungsgemäßen Anordnung besonders günstig, wenn der Absorptionskoeffizient k" in diesem Fall mit ungefähr Λ. / 2 lf · iod* = 2/m ^ bemessen wird. Bei Substanzen mit Absorptionskoeffizienten unter diesen Werten können die derFor substances with relatively small absorption coefficients, it is expedient to combine the effect of the absorption layer and that of the first interference layer (s) in one layer. This is done according to the invention thereby s that the absorption layer itself as ш. λ / 4-layer (m = 1, 2, 3 · ·) $ that is with the geometric layer thickness 2 = m. In this case, as more detailed considerations show, the refractive-index alternating interference scan sequence must start at even m with an interference layer of low refractive index and at odd m with an interference layer of high refractive index. "As mathematical considerations further show , the expected effect of such an arrangement according to the invention is particularly favorable if the absorption coefficient k "is dimensioned in this case as approximately Λ. / 2 lf.iod * = 2 / m.sup.2 for substances with absorption coefficients below these values
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-4- S&li-4- S & li
gewählten Dicke entsprechenden ungefähren Absorptionskoeffizienten durch geringe Beimengungen einer stärker absorbierenden Substanz erreicht werden, die so beschaffen ist, daß sich das physikalische und/oder chemische Verhalten der Grundsubstanz (zum Beispiel bei fotolithografischen Prozeßschritten) nicht nachteilig ändert.selected thickness corresponding to low admixtures of a more absorbent substance, which is such that the physical and / or chemical behavior of the ground substance does not adversely change (for example, in photolithographic process steps).
Ausführungsbeispiel;Embodiment;
Die Erfindung wird nachfolgend an Hand von Figuren durch ein Ausführungsbeispiel näher erläutert.The invention will be explained in more detail with reference to figures by an embodiment.
Eine Metallschicht soll als Träger eingeschriebener Digitalinformationen j etwa in Form kreisrunder metallfreier Zonen von 1 ,um Durchmesser, dienen. Die Erzeugung der metallfreien Mikrozonen geschieht durch eine Laser-Strahlungsquelle mit einer auf einen Strahlungsquerschnitt von 1/Um konzentrierten Ausgangsleistung von 1OmW bei K = 633 nm. ·A metal layer is intended to serve as a carrier of inscribed digital information j, for example in the form of circular metal-free zones of 1, by diameter. The production of the metal-free microzones is done by a laser radiation source with a concentrated to a radiation cross section of 1 / Um output power of 1OmW at K = 633 nm.
Die entsprechend Figur 1 auf einen Glasträger 1 aufgebrachte Metallschicht 2, für welche bei der Wellenlange Λ = 633 nm eine Brechungszahl η = 2,5 und ein Absorptionskoeffizient к = 2,3 eingesetzt wird, weist maximale Absorption von etwa 58% ab Schichtdicken in der Größenordnung von 100 nm aufβ Die absorbierte Leistungsdichte in der Metallschicht 2 zum Zeitpunkt des Auftreffens der Strahlung wird damitThe metal layer 2 applied to a glass substrate 1 in accordance with FIG. 1, for which a refractive index η = 2.5 and an absorption coefficient κ = 2.3 is used at the wavelength Λ = 633 nm, exhibits maximum absorption of about 58% from layer thicknesses in the Magnitude of 100 nm on β The absorbed power density in the metal layer 2 at the time the radiation impinges becomes so
0,58 . 10mW/1 /um2 · 100 nm = 5,8 - 10^ MW > спи* Das Verhältnis der Randhöhe des erzeugten Loches 3 Metallschicht 2 zum Lochdurchraesser beträgt 1 : 10«0.58. 10mW / 1 / around 2 · 100 nm = 5,8 - 10 ^ MW > спи * The ratio of the edge height of the generated hole 3 metal layer 2 to the hole diameter is 1:10 «
Hinterlegt man dagegen entsprechend Figur 2 gemäß der Erfindung eine Metallschicht A- der gleichen optischen Konstanten mit beispielsweise vier Paaren niedrig- und hochbrechender Interferenzschichten 5 (Brechungszahlen I.34 und 2.4) auf einer Glasunterlage 6, so erhält man ein Absorptionsmaximum von etwa 98% mit der Schichtdicke von etwa 10 nm undIf, in contrast, according to FIG. 2, a metal layer A of the same optical constants with, for example, four pairs of low- and high-index interference layers 5 (refractive indices I.34 and 2.4) is deposited on a glass substrate 6, an absorption maximum of approximately 98% is obtained the layer thickness of about 10 nm and
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damit eine Leistungsdichte 0,98 .10 mW/1 лига ' 10 ш = 9,8 1IO^ MW » cm J. Das Verhältnis der Randhöbe des erzeugten Loches 7. in der Metallschicht 4 zum Lochdurchmesser beträgt jetzt nur noch 1 : 100.in order that a power density of 0,98 .10 mW / 1 лига '10 ш = 9,8 1 IO ^ MW »cm J. The ratio of the edge elevation of the produced hole 7 in the metal layer 4 to the hole diameter is now only 1: 100.
Würde entsprechend Figur 3 3-ie Metallschicht 8 mit der gleichen Schichtdicke von etwa 10 nm unmittelbar auf die Glasunterlage 9 aufgebracht werden, so erhielte man einen Absorptionsgrad von nur etwa 33%If, according to FIG. 3, 3-ie metal layer 8 with the same layer thickness of about 10 nm were applied directly to the glass substrate 9, then an absorption level of only about 33% would be obtained.
darit zur Erzeugung der metallfreien Zone 10 eine absorbierte Leistungsdichte von 0,33 > 10 mW/1 ,um > 10 nm = 3,3 . 105 MW ' cm""3.to produce the metal-free zone 10, an absorbed power density of 0.33 > 10 mW / 1 , by> 10 nm = 3.3. 10 5 MW ' cm "" 3 .
Die erfindungsgemäß entsprechend Figur 2 erzeugte metallfreie Zone 7 legt die hochreflektierende Unterlage 5 und 6 frei und kann somit bei Abtastung ffiit energiearmer Strahlung der gleichen Wellenlänge als Reflexionssignal gelesen werden.The inventively generated according to Figure 2 metal-free zone 7 exposes the highly reflective pad 5 and 6 and thus can be read when scanning ffiit low-energy radiation of the same wavelength as a reflection signal.
Der Vorteil der Erfindung bei diesem Ausführungsbeispiel besteht also in der verkürzten Zeit der erforderlichen Strahlungseinwirkung bis zum Verdampfen der Substanz.The advantage of the invention in this embodiment is thus in the shortened time of the required exposure to radiation to the evaporation of the substance.
Damit ist zugleich eine entsprechend verringerte Wärmeleitung in die Nachbarschaft der bestrahlten Zone verbunden. Ein weiterer Vorteil besteht in der geringen Tiefenabmessung der erzeugten Mikrostruktur im Verhältnis zu deren Durchmesser. Aus diesen Eigenschaften folgt eine kontrastreiche Strukturbegrenzung ohne unerwünschte Strukturverbreiterung und ohne störende Beugungseffekte an den Rändern beim Abtasten mit sichtbarer oder längerwelliger Strahlung.This is at the same time a correspondingly reduced heat conduction in the vicinity of the irradiated zone connected. Another advantage is the small depth dimension of the microstructure produced in relation to their diameter. These properties are followed by a high-contrast structure limitation without unwanted structure broadening and without disturbing diffraction effects at the edges when scanning with visible or longer-wave radiation.
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Claims (2)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DD22011280A DD149972A1 (en) | 1980-04-01 | 1980-04-01 | HISTORIZED RECORDING MEDIUM FOR MICROSTRUCTURES |
| DE19813101749 DE3101749A1 (en) | 1980-04-01 | 1981-01-21 | Layered recording medium for microstructures |
| FR8105968A FR2479526A1 (en) | 1980-04-01 | 1981-03-25 | MATERIAL FOR LAMINAR RECORDING BY MICROSTRUCTURES |
| JP4657381A JPS56152238A (en) | 1980-04-01 | 1981-03-31 | Layer array for recording infinitesimal structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DD22011280A DD149972A1 (en) | 1980-04-01 | 1980-04-01 | HISTORIZED RECORDING MEDIUM FOR MICROSTRUCTURES |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DD149972A1 true DD149972A1 (en) | 1981-08-05 |
Family
ID=5523479
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DD22011280A DD149972A1 (en) | 1980-04-01 | 1980-04-01 | HISTORIZED RECORDING MEDIUM FOR MICROSTRUCTURES |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS56152238A (en) |
| DD (1) | DD149972A1 (en) |
| DE (1) | DE3101749A1 (en) |
| FR (1) | FR2479526A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3650649T2 (en) * | 1985-07-08 | 1998-02-12 | Energy Conversion Devices Inc | Data recorder and data processing method |
| CA2000597C (en) * | 1988-10-21 | 1995-07-11 | Toshio Ishikawa | Optical recording element |
| FR2680037A1 (en) * | 1991-07-31 | 1993-02-05 | Sagem | Magneto-optically read data recording medium and process and device for recording and reading applying same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2812868A1 (en) * | 1977-03-28 | 1978-10-12 | Rca Corp | Real time optical recording using a laser beam - which forms pits in reflecting metal layer on a substrate |
| US4101907A (en) * | 1977-08-29 | 1978-07-18 | Rca Corporation | Overcoat structure for optical video disc |
| US4195312A (en) * | 1978-02-24 | 1980-03-25 | Rca Corporation | Recorder and antireflective record blank having an optically passive transparent layer |
-
1980
- 1980-04-01 DD DD22011280A patent/DD149972A1/en not_active IP Right Cessation
-
1981
- 1981-01-21 DE DE19813101749 patent/DE3101749A1/en not_active Withdrawn
- 1981-03-25 FR FR8105968A patent/FR2479526A1/en active Pending
- 1981-03-31 JP JP4657381A patent/JPS56152238A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE3101749A1 (en) | 1982-01-28 |
| FR2479526A1 (en) | 1981-10-02 |
| JPS56152238A (en) | 1981-11-25 |
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| Date | Code | Title | Description |
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| ENJ | Ceased due to non-payment of renewal fee |