CN2932620Y - Semiconductor silicon sheet with damage stress ring - Google Patents

Abstract

The utility model belongs to a semiconductor silicon wafer, in particular to a semiconductor silicon section which can eliminate the surface stress of the semiconductor silicon wafer and have an injury stress ring. The utility model is characterized in that the injury stress ring is arranged on the surface of the silicon section. The beneficial effect of the utility model is that through manufacturing the injury stress ring, the utility model can effectively decrease and eliminate the surface stress of the silicon wafer, prevent the wafer appearing a slip line and a dislocation arrangement, and avoid causing the junction conduction of the integrated circuit p to n or the increasing of the leakage current. Thereby the utility model is simple in method, easy to operate and without changing the present apparatus.

Description

The semiconductor silicon section of band damaging stress ring

Technical field

The utility model belongs to semiconductor wafers, relates in particular to a kind of semiconductor silicon section that can eliminate the band damaging stress ring of quadric stress of semiconductor silicon chip.

Background technology

Show after deliberation, be used for the silicon wafer of large scale integrated circuit substrate, its residual stress 98% derives from the machining of preceding working procedures such as section, abrasive disc.In silicon slice processing process, be through preceding road machining operations such as round as a ball, section, chamfering, grindings.Because in the strong mechanism silicon section forming process, the edge is the easiest to be impaired, stress also mainly concentrates on the edge of silicon section, can cause and collapse limit, fine fisssure equivalent damage, at the residual bigger stress of surface damage layer, because the solid surface tension of crystalline silicon material is very big, cause stress to have by edge and top layer trend to the center of circle and silicon section internal extended and extension.In grinding, polishing and transport process, be subjected to the effect of extraneous mechanical force, can make stress and fine fisssure further to silicon section center and inner extension the, expansion.Silicon section residual stress can cause following harm: will cause crackle, fragmentation when stress accumulation reaches critical value; When extension or high-temperature oxydation, can cause defectives such as sliding line, dislocation row; When diffusion, the stress raiser diffusion excessively causes the conducting of integrated circuit p-n junction; The stress raiser impurity metal ion very easily deposits, and can cause leakage current to increase.For silicon slice surface stress problem, the precise polished removal affected layer of main at present use with the removal residual stress, but because the effect of mechanical force can be introduced new damage again, causes stress to extend to silicon section deep layer, the very difficult thorough residual stress of eliminating.

The utility model content

The purpose of this utility model is to overcome the deficiency of above-mentioned technology, and provides a kind of according to mechanics principle, and the stress of machining is disperseed and decomposes, and stops the stress diffusion of surface stress concentration zones and the semiconductor silicon section of the band damaging stress ring that extends.

The utility model for achieving the above object, by the following technical solutions: a kind of semiconductor silicon section with the damaging stress ring, it is characterized in that: described silicon slice surface is provided with the damaging stress ring.

Described damaging stress ring can have a plurality of, and the functional relation of the damaging stress ring radius except that outmost turns damaging stress ring and the serial number of damaging stress ring is R _i=k * I, wherein, I represents from the center to the sequence number of I the damaging stress ring at edge, R _iBe the radius of I damaging stress ring, k is constant and gets 10～13 scopes.

Described damaging stress ring outmost turns is located at silicon slicing edge 2～3mm, from locating surface 0.5～1mm.

The width of nick of described damaging stress ring is 0.1%～10% of a silicon slice thickness; The tool marks angle is 10 degree～50 degree, and pressure is 2～5kg.

The beneficial effects of the utility model: by making the damaging stress ring, can reduce effectively and remove silicon wafer surface stress, avoid causing the conducting of integrated circuit p-n junction or cause leakage current to increase.Its method is easy, and is easy to operate, do not need to change existing equipment.

Description of drawings

Fig. 1 is the structural representation of antisitic defect circle stress;

Fig. 2 is the distribution schematic diagram of closed loop antisitic defect circle stress to silicon face sliding line defective effect;

Fig. 3 is the distribution schematic diagram of open loop antisitic defect circle stress to silicon face sliding line defective effect;

Fig. 4 is a silicon slice surface sliding line defective schematic diagram.

Embodiment

Describe embodiment of the present utility model in detail below in conjunction with accompanying drawing and preferred embodiment.

Shown in Fig. 1-4, a kind of semiconductor silicon section with the damaging stress ring, 1 surface of cutting into slices of the silicon after described preliminary working is provided with damaging stress ring 2.The damaging stress ring can have a plurality of, and the functional relation of the damaging stress ring radius except that outmost turns damaging stress ring and the serial number of damaging stress ring is R _i=k * I, wherein, I represents from the center to the sequence number of I the damaging stress ring at edge, R _iBe the radius of I damaging stress ring, k is constant and gets 10～13 scopes.The outmost turns damaging stress is located on silicon slicing edge 2～3mm, is 0.5～1mm from locating surface 4.The width of nick of damaging stress ring is 2%～10% of a silicon slice thickness; The tool marks angle is 10 degree～50 degree, and pressure is 2～5kg.

Embodiment 1:

Closed loop antisitic defect circle stress is eliminated silicon face sliding line 3 defective effects: select φ 35mm, resistivity 2～3 * 10 for use ³The monocrystalline silicon section 1 of Ω cm.Get radius at 3mm place, distance edge with diamond graduating with cutter damaging stress ring 2, grind and do high temperature epitaxy (or oxidation) then, get T=1200 ℃, observe sliding line: the sliding line complete obiteration.

Embodiment 2:

The damaging stress ring is eliminated silicon face sliding line defective effect: select 2 φ 50mm, resistivity 2～3 * 10 for use ³The identical monocrystalline silicon section of Ω cm is numbered A, B respectively.Make 1 damaging stress ring with diamond tool on the A sheet, the damaging stress ring is apart from edge 3mm.Make 2 damaging stress rings with diamond tool on the B sheet, outer shroud is apart from edge 3mm, and interior ring radius is chosen 12.5mm.Through grinding, do high temperature epitaxy (or oxidation) then, get T=1200 ℃, observe sliding line: the A sheet does not have sliding line from the edge to interior 20mm, and there is shallow sliding line in its centre.The complete obiteration of B sheet sliding line.

Embodiment 3:

Make a plurality of damaging stress rings and eliminate silicon face sliding line defective effect: select 2 φ 100mm, resistivity 2～3 * 10 for use ³The identical monocrystalline silicon section of Ω cm.Be numbered A, B respectively.Make 2 damaging stress rings with diamond tool on the A sheet, outer shroud is apart from edge 3mm, and interior ring radius is got 37.5mm.Make 4 damaging stress rings with diamond tool on the B sheet, outer shroud is apart from edge 3mm, and other damaging stress ring radius is from inside to outside chosen 12.5mm, 25mm, 37.5mm successively.Through grinding, do high temperature epitaxy (or oxidation) then, get T=1200 ℃, observe sliding line: the A sheet does not have sliding line from the edge to interior 60mm, and there is shallow sliding line in its centre.The complete obiteration of B sheet sliding line.

The above only is preferred embodiment of the present utility model, is not structure of the present utility model is done any pro forma restriction.Every foundation technical spirit of the present utility model all still belongs in the scope of the technical solution of the utility model any simple modification, equivalent variations and modification that above embodiment did.

Claims (4)

1, a kind of semiconductor silicon section with the damaging stress ring is characterized in that: be provided with the damaging stress ring at described silicon slice surface.

2, the semiconductor silicon of band damaging stress ring according to claim 1 section, it is characterized in that: described damaging stress ring can have a plurality of, and the functional relation of the damaging stress ring radius except that outmost turns damaging stress ring and the serial number of damaging stress ring is R _i=k * I, wherein, I represents from the center to the sequence number of I the damaging stress ring at edge, R _iBe the radius of I damaging stress ring, k is constant and gets 10～13 scopes.

3, the semiconductor silicon of band damaging stress ring according to claim 1 section, it is characterized in that: described outmost turns damaging stress is located on silicon slicing edge 2～3mm, from locating surface 0.5～1mm.

4, the semiconductor silicon of band damaging stress ring according to claim 1 section, it is characterized in that: the width of nick of described damaging stress ring is 0.1%～10% of a silicon slice thickness; The tool marks angle is 10 degree～50 degree, and pressure is 2～5kg.