CN2927147Y - Diode temperature compensator - Google Patents

Diode temperature compensator Download PDF

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Publication number
CN2927147Y
CN2927147Y CN 200620043996 CN200620043996U CN2927147Y CN 2927147 Y CN2927147 Y CN 2927147Y CN 200620043996 CN200620043996 CN 200620043996 CN 200620043996 U CN200620043996 U CN 200620043996U CN 2927147 Y CN2927147 Y CN 2927147Y
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China
Prior art keywords
diode
temperature
resistance
series
heater
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Expired - Lifetime
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CN 200620043996
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Chinese (zh)
Inventor
宋群
王�琦
谢芳
黄德松
徐琦
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Bailitong Electronic Co Ltd (shanghai)
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Bailitong Electronic Co Ltd (shanghai)
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Abstract

The utility model relates to a semiconductor IC used in a temperature controller with a heat element with positive temperature coefficient, in particular to an IC applied in temperature sensing part to realize the temperature compensation via the diode symmetry; a diode temperature compensation device makes temperature measuring more accurately, which comprises a heat element with positive temperature coefficient, a heat control SCR, a sampling resistor, a closure diode, a voltage comparator, a voltage switch and power and other elements; the IC comprises a first serial circuit and a second serial circuit network, mainly solves the relevant technical problems that the measurement results measured by the products without temperature sensing in the traditional temperature measuring means are affected by the environment temperature. The utility model has the advantages of solving the problems that the measurement results measured by the products without temperature sensing in the traditional temperature measuring means are affected by the environment temperature successfully and introducing a compensating diode and a compensating resistance, the products can be compensated in the whole temperature range.

Description

Diode total temperature compensation system
Technical field
The utility model relates to a kind of temperature controller (or other electrical equipment) that has the heater of positive temperature coefficient (PTC) and uses SIC (semiconductor integrated circuit), especially a kind of integrated circuit temperature detection part that is applied to of finger utilizes the diode symmetry to do the total temperature compensation, and you make the more accurate diode total temperature of temperature test compensation system.
Background technology
Utilization has the heater of positive temperature coefficient (PTC) and realizes that temperature controlled electronic product now has been widely used in people's the life.As curler, heater of hair straightener, electric blanket etc.
Heater does not need other temperature sensor not only as heater element but also as temperature element in these products, such temperature controller product (below be called: noninductive temperature control product) have stable temperature control, advantage such as control circuit is simple in structure, and is safe and reliable.
The traditional temperature test circuit that is applied to noninductive temperature control product mostly is made up of sample circuit, reference circuit and voltage comparator, in sampling microwave network, enter integrated circuit for the prevention high pressure, must seal in the diode that dams, because the diode temperature drift can bring the error in the test.And traditional circuit is generally ignored this error, will cause temperature controlled deviation like this.If the client is strict to temperature accuracy, this class heater product just is difficult to reach requirement, and the utility model has solved this problem effectively, can make probe temperature accurate and not influenced by ambient temperature.
Summary of the invention
In order to overcome above-mentioned weak point, fundamental purpose of the present utility model aims to provide a kind of integrated circuit of introducing compensation diode and compensating resistance, the diode total temperature compensation system that product is compensated in the total temperature scope.
The technical problems to be solved in the utility model is: mainly solve temperature-measuring results that traditional temp measuring method of noninductive temperature control product brings can be subjected to ambient temperature effect etc. the relevant technologies problem.
The technical scheme that its technical matters that solves the utility model adopts is: this device by the positive temperature coefficient (PTC) heater, add heat control controllable silicon, sample resistance, diode dams, voltage comparator, parts such as voltage switch and power supply are formed, the integrated circuit of this device is made up of first series loop, second series network, wherein:
First series loop is composed in series by sample resistance RA, dam diode D1 and heater H successively; Second series network is composed in series by reference resistance network RF1, RF2 and compensation diode D2 successively; Two ports of compensating resistance RX and resistance in series network RF1, RF2 are in parallel; The negative pole end of the other end of the first series loop heater H and the second series network diode D2 is ground connection GND respectively; The other end of the first series loop sample resistance RA links to each other with power supply VCC; The other end of the second series network reference resistance RF1 links to each other with power supply VCC; The input end of comparer U is connected with anode and the sample resistance RA of diode D1, and another input end of comparer U is connected with reference resistance RF1 and RF2; The negative terminal that adds the heat control controllable silicon SCR is connected with heater H, and the other end is connected with AC power L line.
The diode D1 that dams of described diode total temperature compensation system is identical with two forward drops of compensation diode D2.
The compensating resistance RX of described diode total temperature compensation system elects as non-vanishing, and is adjustable resistor.
Two input terminal voltage unanimities of the comparer U of described diode total temperature compensation system.
The conducting when heating of the control controllable silicon SCR of described diode total temperature compensation system, diode D1 ends; Biased witch K conducting when thermometric, the control controllable silicon SCR is ended.
Key of the present utility model is to introduce compensation diode and compensating resistance, and product is compensated in the total temperature scope.
According to temperature sensing circuit of the present utility model by positive temperature coefficient (PTC) heater H, add the heat control controllable silicon SCR, sample resistance RA, reference resistance network RF1, RF2, compensating resistance RX, diode D1 dams, compensation diode D2, voltage comparator U, bias voltage K switch and power supply VCC form, and it is characterized in that: sample resistance RA, diode D1 and heater H constitute series loop one; Reference resistance network RF1, RF2 and diode D2 constitute series network two; Compensating resistance RX is in parallel with two ends of resistance in series network RF1, RF2; The termination of series connection links to each other with an end of GND and bias voltage K switch respectively; The other end of biased witch links to each other with power supply VCC; The input end of comparer U links to each other with anode and the sample resistance RA of diode D1; Another input end of comparer U links to each other with reference resistance RF1 and RF2; The negative terminal that adds the heat control controllable silicon SCR links to each other with heater H, and the other end links to each other with AC power L line.
Heating controllable silicon SCR conducting during heating, diode D1 ends; Biased witch K conducting during thermometric, SCR ends.Suitably choose sample resistance RA, reference resistance RF1, RF2, make when reaching design temperature, two input terminal voltage unanimities of comparer U.Choose different compensating resistance RX, can regulate electric current by diode D2; This moment, the dividing potential drop coefficient of the resistor voltage divider network that RF1, RF2 constitute remained unchanged; Suitably choose compensating resistance RX, the voltage drop of diode D1 and D2 is consistent under any environment temperature, reach the purpose of total temperature compensation.
The beneficial effects of the utility model are: the solution that this device is successful the temperature-measuring results brought of traditional temp measuring method of noninductive temperature control product be subjected to the problem of ambient temperature effect; Key is to introduce compensation diode and compensating resistance, makes product beneficial effect such as be compensated in the total temperature scope.
Description of drawings
Below in conjunction with drawings and Examples the utility model is further specified.
Accompanying drawing 1 is traditional total temperature test circuit structure schematic diagram;
Accompanying drawing 2 is the utility model total temperature test circuit structure schematic diagram;
Accompanying drawing 3 is the utility model heating control circuit structure principle chart;
Accompanying drawing 4 is the utility model temperature test circuit theory diagrams;
Accompanying drawing 5 is the circuit theory diagrams of one of the utility model embodiment;
Accompanying drawing 6 is two the circuit theory diagrams of the utility model embodiment;
Label declaration in the accompanying drawing:
10-first series loop;
20-second series network;
Embodiment
See also shown in the accompanying drawing 2,3,4,5,6, the utility model by the positive temperature coefficient (PTC) heater, add heat control controllable silicon, sample resistance, diode dams, voltage comparator, parts such as voltage switch and power supply are formed, the integrated circuit of this device is made up of first series loop (10) second series networks (20), wherein:
First series loop (10) is composed in series by sample resistance RA, dam diode D1 and heater H successively; Second series network (20) is composed in series by reference resistance network RF1, RF2 and compensation diode D2 successively; Two ports of compensating resistance RX and resistance in series network RF1, RF2 are in parallel; The negative pole end of the other end of first series loop (10) heater H and second series network (20) diode D2 is ground connection GND respectively; The other end of first series loop (10) sample resistance RA links to each other with power supply VCC; The other end of second series network (20) reference resistance RF1 links to each other with power supply VCC; The input end of comparer U is connected with anode and the sample resistance RA of diode D1, and another input end of comparer U is connected with reference resistance RF1 and RF2; The negative terminal that adds the heat control controllable silicon SCR is connected with heater H, and the other end is connected with AC power L line.
The diode D1 that dams of described diode total temperature compensation system is identical with two forward drops of compensation diode D2.
The compensating resistance RX of described diode total temperature compensation system elects as non-vanishing, and for being adjustable to infinitely-great resistance.
Two input terminal voltage unanimities of the comparer U of described diode total temperature compensation system.
The conducting when heating of the control controllable silicon SCR of described diode total temperature compensation system, diode D1 ends; Biased witch K conducting when thermometric, the control controllable silicon SCR is ended.
Specific structural features of the present utility model is as follows:
1), the design feature of noninductive temperature control product
Noninductive temperature control product all utilizes heater itself to add gentle thermometric.Because this class heater resistance value has ptc characteristics, along with the rising resistance of temperature also can constantly become greatly, this also is the basis that can be used as temperature element simultaneously.By circuit variation and the pairing reference voltage of design temperature that the variation of this resistance value is converted into voltage signal compared, just can judge the temperature of PTC heater.
2), heating control circuit
See also shown in the accompanying drawing 3, it is heating controller that the control heater circuit generally adopts controllable silicon SCR, when the GATE signal that drives SCR is effective, and SCR conducting, heater H heating; When driving the GATE invalidating signal of SCR, the SCR conducting, heater H stops heating.
3), temperature test circuit
See also shown in the accompanying drawing 4, the temperature test circuit is by sample resistance RA, heater H, and reference resistance RF1, RF2 and comparer U form.Resistance R A, heater H constitute sampling loop, and resistance R F1, RF2 constitute reference loop.Sampling voltage is V1, and reference voltage is V2, and when V1=V2, the output of comparer begins turning represents that promptly heater reaches design temperature.
Represent the resistance value of resistance R A, the resistance value of heater H, resistance value, the resistance R F2 resistance value of resistance R F1 and the voltage of the power supply VCC that takes a sample respectively with RA, RH, RF1, RF2, VCC, VD1, VD2 in the following formula.(later identical)
V1=VCC*RH/(RA+RH)
V2=VCC*RF2/(RF1+RF2)
V1=V2
VCC*RH/(RA+RH)=VCC*RF2/(RF1+RF2)
Can solve by following formula:
RH=RA*(RF2/RF1)
The resistance value of the heater that tests out as can be seen from result of calculation is only relevant with the ratio of the resistance value of RA and RF1 and RF2.
4), timesharing control heating, thermometric
During the temperature test circuit working, require the PTC heater to stop heating, otherwise heating current will be superimposed upon on the sample rate current, causes the inaccurate of temperature test.So heating control circuit and temperature test circuit palpus time-sharing work, the temperature test circuit stopped when both heating control circuit was worked, and heating control circuit stops during the temperature test circuit working.
5), the shortcoming of traditional circuit
See also shown in the accompanying drawing 1, traditional circuit structure generally by positive temperature coefficient (PTC) heater H, adds the heat control controllable silicon SCR, sample resistance RA, and reference resistance network RF1, RF2, the diode D1 that dams, voltage comparator U, bias voltage K switch and power supply VCC form.Resistance R A, diode D1 and heater H constitute sampling loop; RF1, RF2 constitute reference loop, by just can finish the temperature test to heater to the comparison of sampling voltage and reference voltage.
The effect of the diode D1 that dams in the circuit is to stop high voltage to enter the low-voltage circuit part, avoids the damage of circuit.But the temperature discreteness of diode is very big, and under same sample rate current, the pressure drop VD1 of diode is on a declining curve with the rising of environment temperature, and this accuracy that will cause temperature test reduces with the variation of environment temperature.
V1=(VCC-VD1)*RH/(RA+RH)+VD1
V2=VCC*RF2/(RF1+RF2)
V1=V2
(VCC-VD1)*RH/(RA+RH)+VD1=VCC*RF2/(RF1+RF2)
Can solve by following formula:
RH=RA*(RF2/RF1)-RA*(1+(RF2/RF1))*(VD1/VCC)
The resistance value of the heater that tests out as can be seen from result of calculation is except outside the Pass the ratio with the resistance value of RA and RF1 and RF2 has, and is also relevant with the ratio of VD1 and VCC.
6), total temperature compensation
The utility model is on the traditional circuit basis, has increased compensating circuit.Compensating circuit is made up of resistance R X and compensation diode D2,
Here dam diode D1 and compensation diode D2 adopts the diode of same model, and when the electric current that flows through D1 and D2 was identical, diode drop VD1, the VD2 that is produced under any environment temperature was equal; This moment, the dividing potential drop coefficient of the resistor voltage divider network that RF1, RF2 constitute remained unchanged.
The compensating resistance RX total resistance value in parallel with reference resistance RF1, RF2 is total resistance 1, and sample resistance RA is total resistance 2 with the total resistance value of connecting of heater H, and when these two all-in resistances equated, the electric current that flows through D1, D2 also equated.
By calculating the resistance that can obtain RX and RH:
RX*(RF1+RF2)/(RX+RF1+RF2)=RA+RH
RX=(RA+RH)*(RF1+RF2)/(RF1+RF2-RA-RH) ③
V1=(VCC-VD1)*RH/(RA+RH)+VD1
V2=(VCC-VD2)*RF2/(RF1+RF2)+VD2
V1=V2
(VCC-VD1)*RH/(RA+RH)=(VCC-VD2)*RF2/(RF1+RF2)?①
VD1=VD2
By top 1., 2. formula can solve:
RH=RA*(RF2/RF1)
Substitution is Shi Kede 3.:
RX=RA*(RF1+RF2)/(RF1-RA)
The resistance value of the heater that tests out as can be seen from result of calculation is only relevant with the ratio of the resistance value of RA and RF1 and RF2.
Application example of the present utility model
Use 1:
When the diode D1 that dams adopts the diode of different model with compensation diode D2, can be according to the characterisitic parameter of selected diode, be compensated diode and dam the rated operational current of diode, calculate their ratio n, calculate the value of RX by their working current ratio relation.
Be respectively I1, I2 if flow through the actual current of D1, D2.
I1=(VCC-VD1)/(RA+RH)
I2=(VCC-VD2)/(RX*(RF1+RF2)/(RX+RF1+RF2))
I1/I2=n
V1=(VCC-VD1)*RH/(RA+RH)+VD1
V2=(VCC-VD2)*RF2/(RF1+RF2)+VD2
V1=V2
(VCC-VD1)*RH/(RA+RH)=(VCC-VD2)*RF2/(RF1+RF2)
VD1=VD2
By can calculate in the following formula:
RH=RA*RF2/(RF1+RF2)
RX=n*RA*(RF1+RF2)/(RF1-n*RA)
Use 2:
See also shown in the accompanying drawing 5, to resistance R B of series connection between the heater H, choose suitable RB resistance, can adapt to the heater of different temperature coefficients at diode D1.
Use 3:
See also shown in the accompanying drawing 6,, some multidiameter option switchs are set insert different reference voltages respectively, can make product have the function that different temperatures is set at the end that comparer links to each other with reference resistance RF1, RF2.
Protection domain of the present utility model:
A kind of integrated circuit (IC) apparatus acts on the temperature sensing circuit part.It is by positive temperature coefficient (PTC) heater H, add the heat control controllable silicon SCR, sample resistance RA, reference resistance network RF1, RF2, compensating resistance RX, diode D1, D2, voltage comparator U, bias voltage K switch and power supply VCC form, and it is characterized in that: sample resistance RA, diode D1 and heater H constitute series loop one; Reference resistance network RF1, RF2 and diode D2 constitute series network two; Compensating resistance RX is in parallel with two ends of resistance in series network RF1, RF2; The termination of series connection links to each other with an end of GND and bias voltage K switch respectively; The other end of biased witch links to each other with power supply VCC; The input end of comparer U links to each other with anode and the sample resistance RA of diode D1; Another input end of comparer U links to each other with reference resistance RF1 and RF2; The negative terminal that adds the heat control controllable silicon SCR links to each other with heater H, and the other end links to each other with AC power L line.
Choose different compensating resistance RX, can regulate electric current by diode D2; This moment, the dividing potential drop coefficient of the resistor voltage divider network that RF1, RF2 constitute remained unchanged; Suitably choose compensating resistance RX, the voltage drop of diode D1 and D2 is consistent under any environment temperature.
Suitably choose sample resistance RA, reference resistance RF1, RF2, make when reaching design temperature, two input terminal voltage unanimities of comparer U.
Heating controllable silicon SCR conducting during heating, diode D1 ends; Biased witch K conducting during thermometric, SCR ends.

Claims (5)

1, a kind of diode total temperature compensation system, this device has the positive temperature coefficient (PTC) heater, adds the heat control controllable silicon, sample resistance, diode dams, voltage comparator, voltage switch and power supply, it is characterized in that: the integrated circuit of this device is made up of first series loop (10) second series networks (20), wherein:
First series loop (10) is composed in series by sample resistance RA, dam diode D1 and heater H successively; Second series network (20) is composed in series by reference resistance network RF1, RF2 and compensation diode D2 successively; Two ports of compensating resistance RX and resistance in series network RF1, RF2 are in parallel; The negative pole end of the other end of first series loop (10) heater H and second series network (20) diode D2 is ground connection GND respectively; The other end of first series loop (10) sample resistance RA links to each other with power supply VCC; The other end of second series network (20) reference resistance RF1 links to each other with power supply VCC; The input end of comparer U is connected with anode and the sample resistance RA of diode D1, and another input end of comparer U is connected with reference resistance RF1 and RF2; The negative terminal that adds the heat control controllable silicon SCR is connected with heater H, and the other end is connected with AC power L line.
2, diode total temperature compensation system according to claim 1 is characterized in that: the described diode D1 that dams is identical with two forward drops of compensation diode D2.
3, diode total temperature compensation system according to claim 1, it is characterized in that: described compensating resistance RX elects as non-vanishing, and is adjustable resistor.
4, diode total temperature compensation system according to claim 1 is characterized in that: two input terminal voltage unanimities of described comparer U.
5, diode total temperature compensation system according to claim 1 is characterized in that: the conducting when heating of described control controllable silicon SCR, and diode D1 ends; Biased witch K conducting when thermometric, the control controllable silicon SCR is ended.
CN 200620043996 2006-07-18 2006-07-18 Diode temperature compensator Expired - Lifetime CN2927147Y (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101540497B (en) * 2008-03-19 2011-09-07 盛群半导体股份有限公司 Thermal-shutdown circuit and method thereof
CN103529875A (en) * 2013-10-30 2014-01-22 成都市宏山科技有限公司 Overheating control circuit applicable to household appliance
CN108512535A (en) * 2018-03-29 2018-09-07 华南理工大学 The thyristor gating circuit compensated using posive temperature coefficient thermistor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101540497B (en) * 2008-03-19 2011-09-07 盛群半导体股份有限公司 Thermal-shutdown circuit and method thereof
CN103529875A (en) * 2013-10-30 2014-01-22 成都市宏山科技有限公司 Overheating control circuit applicable to household appliance
CN103529875B (en) * 2013-10-30 2016-02-03 成都市宏山科技有限公司 Be applicable to the superheated control circuit of household electrical appliance
CN108512535A (en) * 2018-03-29 2018-09-07 华南理工大学 The thyristor gating circuit compensated using posive temperature coefficient thermistor

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Granted publication date: 20070725

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