CN2781565Y - Structure of wafer probe card - Google Patents
Structure of wafer probe card Download PDFInfo
- Publication number
- CN2781565Y CN2781565Y CN 200520002198 CN200520002198U CN2781565Y CN 2781565 Y CN2781565 Y CN 2781565Y CN 200520002198 CN200520002198 CN 200520002198 CN 200520002198 U CN200520002198 U CN 200520002198U CN 2781565 Y CN2781565 Y CN 2781565Y
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- Prior art keywords
- probe
- engagement plate
- wafer
- substrate
- crystal grain
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- Expired - Fee Related
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The utility model relates to a structure of a wafer probe card, mainly composed of a base board, a connection board, an elastic mechanism arranged between the base board and the connection board, and a plurality of micro electromechanical rigid probes arranged at the lower part of the connection board. Every crystal grain has different contact pad heights through increasing test heights when the wafer is tested; the elastic mechanism can absorb and bear impact force generated from increasing test heights so that the micro electromechanical rigid probe of the wafer probe card can be well inserted in the contact pads of the crystal grain and the contact pads of the crystal grain suffering from oversize pressure are presented from being damaged. Thus, the utility model has good and stable electrical property test results when the wafer probe card is tested; the utility model overcomes the shortcoming that the existing rigid probe card easily causes the damage of the contact pads of the crystal grain because the contact pads suffer from oversize pressure.
Description
Technical field
The utility model relates to a kind of structure of wafer probe cards, is meant the wafer probe card structure that is provided with elastic mechanism and adopts rigid probe especially.
Background technology
On the manufacturing process of semiconductor industry, mainly can be divided into IC design, silicon wafer process, wafer sort and wafer encapsulation four big steps.
Wherein so-called wafer sort step is carried out electric characteristics to every on wafer crystal grain exactly and is detected, with the defective crystal grain on detection and the superseded wafer.When carrying out wafer sort, be to utilize the probe of wafer probe cards to thrust the contact pad (pad) on the crystal grain and constitute electrically contact, to be sent to automatic test equipment (ATE) via the measured test signal of probe again and do analysis and judge, therefore can obtain the electric characteristics test result of every crystal grain on the wafer.
And above-mentioned employed wafer probe cards according to employed probe structure, roughly can be divided into 30 two kinds of cantalever type probe card shown in Figure 1 10 and rigidity formula probe shown in Figure 4.Wherein, cantalever type probe card 10 structures shown in Figure 1, by a substrate 11, be connected engagement plate 12 below this substrate 11, and some cantalever type probes 13 that are arranged on this engagement plate 12 formed.
As shown in Figures 2 and 3, when using this cantalever type probe card 10 to carry out wafer sort, be to utilize to have flexible cantalever type probe 13 and contact the electrical characteristics test of testing every crystal grain 20 with contact pad 21 formations on the crystal grain 20.But; the height of the contact pad 21 that every crystal grain 20 is set differs; add that each probe height on the cantalever type probe card also is not quite similar; during test; cause crystal grain 20 that electrical anomaly takes place because can't contact really for fear of highly lower contact pad 21 or highly lower cantalever type probe 13; therefore when reality is tested, can increase test height (OD value) usually and solve this problem.
But, the result of increase test height can cause and manifest this cantalever type probe card 10 following shortcoming:
One, as shown in Figure 3, the cantalever type probe 13 of this cantalever type probe card 10 can produce side force because needle point is subjected to vertical force, and then cause cantalever type probe 13 that laterally offset and bending take place, when needle point side-play amount or amount of bow were excessive, the pin trace on contact pad 21 was difficult for the identification, and easier test failure or the test card of causing damages, and excessive test height also can cause excessive lateral thrust, even contact pad 21 is destroyed.
They are two years old, when carrying out wafer sort, the cantalever type probe 13 of this cantalever type probe card 10 does not thrust the contact pad 21 of crystal grain 20, only needle surface contact, the needle surface of this cantalever type probe 13 is easy to take place cause electrically unusual because of being stained with attachment (for example oxide), so this cantalever type probe card 10 often needs the increase testing time to do the action of pin clearly, and too much clear pin action will cause the test card life-span to shorten.
Its three, the cantalever type probe 13 of this cantalever type probe card 10 is that so the needle point flatness drop of each cantalever type probe 13 is bigger, this phenomenon then needs bigger test height to overcome this error with manual dress pin.
As for rigidity formula probe 30 structures shown in Figure 4, by a substrate 11, be connected engagement plate 12 below this substrate 11, and some these micro electronmechanical rigid probe 33 above engagement plate 12 that are arranged on formed.
Because this rigidity formula probe 30 adopts micro electronmechanical rigid probe 33, so when carrying out wafer sort, the micro electronmechanical rigid probe 33 of this rigidity formula probe 30 can not produce side force because of being subjected to vertical force, on using, do not have fully the shortcoming of foregoing cantalever type probe card 10, and can penetrate into the contact pad 21 of crystal grain 20 really, so can obtain preferable and more stable testing electrical property result.
But; this rigidity formula probe 30 but has the too shortcoming of rigidity of structure; as Fig. 5 and shown in Figure 6; when carrying out wafer sort; if when need increase test height for every crystal grain 20 set contact pad 21 highly differ; cause some crystal grain 20 set contact pad 21 because thrust too dark by rigidity formula probe 30 and deform through regular meeting; perhaps damage because bearing excessive acupuncture pressure; so; this rigidity formula probe 30 needs improved part, is exactly how to avoid the contact pad 21 of crystal grain 20 to cause distortion or damage because of bearing excessive pressure.
The utility model content
Main purpose of the present utility model provides a kind of wafer probe card structure that is provided with elastic mechanism, the structure that can overcome existing rigidity formula probe is too outside the shortcoming of rigidity, and is unlikely the contact pad damage that can cause crystal grain because of having pooling feature when carrying out wafer sort.
Secondary objective of the present utility model provides a kind of wafer probe card structure of novelty, by a substrate, one engagement plate, one is arranged on the elastic mechanism in the middle of this substrate and this engagement plate, and some micro electronmechanical rigid probe that this engagement plate below is set are formed, if need be when increasing test height when carrying out wafer sort for every set contact pad height of crystal grain differs, can and bear the contact pad of wafer by the elastic mechanism absorption because increase the suffered impulsive force of test height, make the micro electronmechanical rigid probe of wafer probe cards can thrust the contact pad of crystal grain really, and the contact pad that can avoid causing crystal grain is subjected to excessive pressure and damages, can obtain preferable and more stable testing electrical property result when therefore, carrying out wafer sort.
The utility model provides a kind of structure of wafer probe cards, comprise a substrate, an engagement plate and some micro electronmechanical rigid probe that is arranged at this engagement plate below, it is characterized in that: the centre of this substrate and this engagement plate is provided with an elastic washer, and constitutes electric connection with lead between this substrate and this engagement plate.
The structure of wafer probe cards of the present utility model is characterized in that: this elastic washer part is embedded in the set inside grooves of a grip slipper, and this elastic washer and this grip slipper are arranged on the centre of this substrate and this engagement plate.
Wafer probe card structure of the present utility model also is provided with recoverable and the horizontal plane vernier knob of finely tuning this micro electronmechanical rigid probe flatness.
The utility model provides a kind of structure of wafer probe cards, comprise that a substrate, an engagement plate, are arranged on detecting head below this engagement plate, and some micro electronmechanical rigid probe of putting this detecting head below of being located at, it is characterized in that: the centre of this substrate and this engagement plate is provided with an elastic washer, and constitutes electric connection with lead between this substrate and this engagement plate.
The structure of wafer probe cards of the present utility model is characterized in that, this elastic washer part is embedded in the inside grooves of a grip slipper, and this elastic washer and this grip slipper are arranged on the centre of this substrate and this engagement plate.
The structure of wafer probe cards of the present utility model is characterized in that: this detecting head is made of the single or multiple lift ceramic substrate, and is provided with wire line.
The structure of wafer probe cards of the present utility model also is provided with recoverable and the horizontal plane vernier knob of finely tuning micro electronmechanical rigid probe flatness; And the horizontal plane vernier knob of recoverable and the micro electronmechanical rigid probe flatness of fine setting.
Therefore, wafer probe of the present utility model is stuck in has preferable and more stable testing electrical property result when carrying out wafer sort, and can overcome the shortcoming that the contact pad that causes crystal grain when existing rigidity formula probe is used is easily damaged because being subjected to excessive pressure.
Description of drawings
Fig. 1 is the structural representation of existing cantalever type probe card;
Fig. 2 is the schematic diagram that uses cantalever type probe card shown in Figure 1 to carry out wafer sort in the semi-conductive processing procedure;
Fig. 3 is that cantalever type probe shown in Figure 1 is stuck in the schematic diagram that test error takes place easily for cantalever type probe when carrying out wafer sort;
Fig. 4 is the structural representation of existing rigidity formula probe;
Fig. 5 is the schematic diagram that uses rigidity formula probe shown in Figure 4 to carry out wafer sort in the semi-conductive processing procedure;
Fig. 6 is the schematic diagram that rigidity formula probe shown in Figure 4 causes the contact pad of crystal grain to be damaged by rigid probe when carrying out wafer sort easily;
Fig. 7 is the structural representation of the wafer probe cards shown in the utility model;
Fig. 8 is the schematic diagram that uses wafer probe cards of the present utility model to carry out wafer sort in the semi-conductive processing procedure;
Fig. 9 is that wafer probe of the present utility model is stuck in and can brings into play cushioning effect according to elastic mechanism when carrying out wafer sort and avoid causing the impaired schematic diagram of crystal grain.
The simple declaration of assembly conventional letter
10, cantalever type probe card 11, substrate
12, engagement plate 13, cantalever type probe
20, crystal grain 21, contact pad
30, rigidity formula probe 12, engagement plate
33, micro electronmechanical rigid probe 40, wafer probe cards
42, grip slipper 43, groove
44, elastic washer 46, horizontal plane vernier knob
47, detecting head 48, micro electronmechanical rigid probe
49, lead
Embodiment
As shown in Figure 7, wafer probe cards 40 shown in the utility model has three kinds of specific embodiments basically, first kind of specific embodiment is by a substrate 11, an engagement plate 12, one is arranged on the elastic washer 44 in the middle of this substrate 11 and this engagement plate 12, and some micro electronmechanical rigid probe 48 common combinations that these engagement plate 12 belows are set constitute.
Wherein, this substrate 11 is the printed circuit board (PCB)s that can be applicable to automatic test equipment (ATE).And this elastic washer 44 be by at high temperature (about 85 ℃) still not the flexible material of malleable make, have the pressurized restorable immediately characteristic after distortion and pressure one disappearance that is crushed immediately.So, behind the centre of elastic washer 44, just constitute the elastic mechanism of this wafer probe cards 40 through being arranged on this substrate 11 and this engagement plate 12, as long as the micro electronmechanical rigid probe 48 1 of engagement plate 12 is subjected to pressure at right angle, this structural design can facilitate this elastic washer 44 to absorb the suffered pressure of this micro electronmechanical rigid probe 48 by the distortion that is crushed immediately, and therefore alleviates the pressure that this micro electronmechanical rigid probe 48 affords.
And second kind of specific embodiment of the wafer probe cards 40 shown in the utility model, be groove 43 inside that elastic washer 44 parts shown in first kind of specific embodiment are embedded in a grip slipper 42, the grip slipper 42 that will be provided with elastic washer 44 again is arranged in the middle of this substrate 11 and this engagement plate 12, makes this wafer probe cards 40 have with grip slipper 42 and the elastic washer 44 common elastic mechanisms that constitute.As long as the micro electronmechanical rigid probe 48 1 of engagement plate 12 is subjected to pressure at right angle, this elastic washer 44 can be crushed distortion immediately to alleviate the pressure that this micro electronmechanical rigid probe 48 affords.
And the third specific embodiment of the wafer probe cards 40 shown in the utility model, be that the micro electronmechanical rigid probe 48 shown in first kind or the second kind of specific embodiment is located on the good and detecting head 47 that be made of the single or multiple lift ceramic substrate of flatness, because this detecting head 47 is provided with wire line, so through be arranged at this engagement plate 12 below after, can facilitate the micro electronmechanical rigid probe 48 of this detecting head 47 to constitute and electrically connect with this engagement plate 12.Therefore, as long as the micro electronmechanical rigid probe 48 1 of detecting head 47 is subjected to pressure at right angle, the elastic washer 44 of the third specific embodiment can be crushed distortion immediately to alleviate the pressure that this micro electronmechanical rigid probe 48 affords.
Above-described each wafer probe cards 40 specific embodiment since between substrate 11 and the engagement plate 12 by the relation of elastic washer 44 compartments, help connection lead 49 to make this substrate 11 and this engagement plate 12 constitute electric connection so must relend, make this micro electronmechanical rigid probe 48 also electrically connect with these substrate 11 formations.
In addition, for the flatness of the micro electronmechanical rigid probe 48 of proofreading and correct and finely tuning wafer probe cards 40, above-described each wafer probe cards 40 specific embodiment also need be provided with horizontal plane vernier knob 46, and constitute other specific embodiment of the present utility model.
As Fig. 8 and shown in Figure 9, when using the wafer probe cards 40 shown in the utility model to carry out wafer sort, if when need increase test height for every crystal grain 20 set contact pad 21 highly differ, the elastic washer 44 of wafer probe cards 40 of the present utility model can be brought into play function to alleviate the pressure that micro electronmechanical rigid probe 48 is born, make the unlikely contact pad 21 that causes of pressure that micro electronmechanical rigid probe 48 of the present utility model is thrust the contact pad 21 on the crystal grain 20 damage, so it is quite clear to thrust the pin trace of contact pad 21 of crystal grain 20, and the pin trace degree of depth can be reached an agreement, except constituting stable electrically contact, and can avoid causing error in the identification, therefore, can obtain preferable and more stable testing electrical property result.
By above-mentioned description, the related work personnel can carry out various change and modification fully in the scope that does not depart from the utility model technological thought.
Therefore, technical scope of the present utility model is not limited to the content on the specification, must determine its technical scope according to interest field.
Claims (8)
1, a kind of structure of wafer probe cards, comprise a substrate, an engagement plate and some micro electronmechanical rigid probe that is arranged at this engagement plate below, it is characterized in that: the centre of this substrate and this engagement plate is provided with an elastic washer, and constitutes electric connection with lead between this substrate and this engagement plate.
2, the structure of wafer probe cards as claimed in claim 1 is characterized in that: this elastic washer part is embedded in the set inside grooves of a grip slipper, and this elastic washer and this grip slipper are arranged on the centre of this substrate and this engagement plate.
3, wafer probe card structure as claimed in claim 1 or 2 is characterized in that: the horizontal plane vernier knob that also is provided with recoverable and this micro electronmechanical rigid probe flatness of fine setting.
4, a kind of structure of wafer probe cards, comprise that a substrate, an engagement plate, are arranged on detecting head below this engagement plate, and some micro electronmechanical rigid probe of putting this detecting head below of being located at, it is characterized in that: the centre of this substrate and this engagement plate is provided with an elastic washer, and constitutes electric connection with lead between this substrate and this engagement plate.
5, the structure of wafer probe cards as claimed in claim 4 is characterized in that, this elastic washer part is embedded in the inside grooves of a grip slipper, and this elastic washer and this grip slipper are arranged on the centre of this substrate and this engagement plate.
6, as the structure of claim 4 or 5 described wafer probe cards, it is characterized in that: this detecting head is made of the single or multiple lift ceramic substrate, and is provided with wire line.
7, as the structure of claim 4 or 5 described wafer probe cards, it is characterized in that: the horizontal plane vernier knob that also is provided with recoverable and the micro electronmechanical rigid probe flatness of fine setting.
8, the structure of wafer probe cards as claimed in claim 6 is characterized in that: the horizontal plane vernier knob that also is provided with recoverable and the micro electronmechanical rigid probe flatness of fine setting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520002198 CN2781565Y (en) | 2005-02-07 | 2005-02-07 | Structure of wafer probe card |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520002198 CN2781565Y (en) | 2005-02-07 | 2005-02-07 | Structure of wafer probe card |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2781565Y true CN2781565Y (en) | 2006-05-17 |
Family
ID=36762766
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200520002198 Expired - Fee Related CN2781565Y (en) | 2005-02-07 | 2005-02-07 | Structure of wafer probe card |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2781565Y (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102854343A (en) * | 2011-06-29 | 2013-01-02 | 台湾积体电路制造股份有限公司 | Test structures and testing methods for semiconductor devices |
| CN103675368A (en) * | 2013-10-23 | 2014-03-26 | 上海华力微电子有限公司 | Method for improving pricking effect of probe card |
| CN109839522A (en) * | 2017-11-24 | 2019-06-04 | 中华精测科技股份有限公司 | Probe card device and its signal converting module |
| CN109839521A (en) * | 2017-11-24 | 2019-06-04 | 中华精测科技股份有限公司 | Probe card device and its signal transmission module |
| CN110118883A (en) * | 2018-02-07 | 2019-08-13 | 中华精测科技股份有限公司 | Probe card device and its signal Transmission Part |
| CN114188310A (en) * | 2021-11-29 | 2022-03-15 | 强一半导体（苏州）有限公司 | Method for realizing measurement slippage of thin film probe |
| CN114487789A (en) * | 2022-04-02 | 2022-05-13 | 浙江清华柔性电子技术研究院 | Wafer detection probe and wafer detection system |
-
2005
- 2005-02-07 CN CN 200520002198 patent/CN2781565Y/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102854343A (en) * | 2011-06-29 | 2013-01-02 | 台湾积体电路制造股份有限公司 | Test structures and testing methods for semiconductor devices |
| CN102854343B (en) * | 2011-06-29 | 2016-03-23 | 台湾积体电路制造股份有限公司 | For test structure and the method for testing of semiconductor devices |
| US9891273B2 (en) | 2011-06-29 | 2018-02-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Test structures and testing methods for semiconductor devices |
| CN103675368A (en) * | 2013-10-23 | 2014-03-26 | 上海华力微电子有限公司 | Method for improving pricking effect of probe card |
| CN109839522A (en) * | 2017-11-24 | 2019-06-04 | 中华精测科技股份有限公司 | Probe card device and its signal converting module |
| CN109839521A (en) * | 2017-11-24 | 2019-06-04 | 中华精测科技股份有限公司 | Probe card device and its signal transmission module |
| CN109839521B (en) * | 2017-11-24 | 2021-05-14 | 中华精测科技股份有限公司 | Probe card device and signal transmission module thereof |
| CN110118883A (en) * | 2018-02-07 | 2019-08-13 | 中华精测科技股份有限公司 | Probe card device and its signal Transmission Part |
| CN114188310A (en) * | 2021-11-29 | 2022-03-15 | 强一半导体（苏州）有限公司 | Method for realizing measurement slippage of thin film probe |
| CN114188310B (en) * | 2021-11-29 | 2023-10-24 | 强一半导体(苏州)股份有限公司 | Method for realizing measurement slip of film probe |
| CN114487789A (en) * | 2022-04-02 | 2022-05-13 | 浙江清华柔性电子技术研究院 | Wafer detection probe and wafer detection system |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |