CN2781392Y - Avalanche photodiode temp bias voltage tester - Google Patents

Avalanche photodiode temp bias voltage tester Download PDF

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Publication number
CN2781392Y
CN2781392Y CN 200420034040 CN200420034040U CN2781392Y CN 2781392 Y CN2781392 Y CN 2781392Y CN 200420034040 CN200420034040 CN 200420034040 CN 200420034040 U CN200420034040 U CN 200420034040U CN 2781392 Y CN2781392 Y CN 2781392Y
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CN
China
Prior art keywords
avalanche photodide
proving installation
apd
interface
circuit
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Expired - Lifetime
Application number
CN 200420034040
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Chinese (zh)
Inventor
张超
曾雪飞
杨忠
黄远军
黄庆
蒋智勇
曹军
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Source Photonics Chengdu Co Ltd
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Feibo Chuang Chengdu Technology Co ltd
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Priority to CN 200420034040 priority Critical patent/CN2781392Y/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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Abstract

The utility model provides a temperature bias voltage testing device for an avalanche photodiode, which comprises a shell and testing components arranged in the shell, wherein the testing components comprises a light source, an optical branching device or a light switch, an APD testing device, a current/voltage testing device and a control device, the optical branching device or the light switch is connected with the light source through an optical attenuator, the APD testing device is connected with the optical branching device or the light switch through an optical fiber jumper wire, and is arranged in a high and low temperature box, the current/voltage testing device is connected with the APD testing device through a testing wire, and the control device is connected with the APD testing device through a control cable, and meanwhile is connected with the current/voltage testing device through a data cable. The utility model can automatically test multipath APD, can record and read test data, has the advantages of high efficiency, accurate test and is suitable for large scale production.

Description

Avalanche photodide temperature offset voltage tester equipment
Technical field
The utility model relates to a kind of electron device testing equipment, particularly relates to a kind of avalanche photodide temperature offset voltage tester equipment.
Background technology
The quality of the affects receiving sensitivity of the photocurrent gain factor of avalanche photo diode (APD), gain factor is excessive, can cause device to produce bigger shot noise, reduces the detection sensitivity of system; Gain factor is too small, can cause photocurrent less, makes the detection sensitivity of system not reach ideal value.And the photocurrent gain factor depends on its bias voltage size, bias voltage is high more, then the photocurrent gain factor is big more, so desirable bias voltage is the key point of raising system detection sensitivity, but desirable bias voltage is very responsive to temperature, varies with temperature and changes, therefore, in order to guarantee electro-optical system operate as normal in wider temperature range, just must under different temperatures, compensate the bias voltage of APD.At present, when APD is carried out the bias voltage compensation, can only at first estimate the temperature offset voltage characteristic, in test process, adjust the compensating circuit parameter at last by experimental formula.But because the individual difference of photoelectric device is bigger, therefore, adopt estimation mode error bigger, and because the compensating circuit parameter is many, and this method is difficult to obtain higher sensitivity, and it is big to adjust difficulty, and efficient is low.
Summary of the invention
The purpose of this utility model is to overcome above-mentioned shortcoming, and a kind of automatically testing multi-channel A PD is provided, and can writes down the read test data, the efficient height, test accurately is suitable for the avalanche photodide temperature offset voltage tester equipment of use of large-scale production.
The utility model avalanche photodide temperature offset voltage tester equipment comprises light source, the optical branching device or the photoswitch that are connected with light source by optical attenuator, be connected with optical branching device or photoswitch and be arranged on APD proving installation in the high-low temperature chamber by optical patchcord, the current/voltage proving installation that is connected with the APD proving installation by p-wire, be connected with the APD proving installation by umbilical cable, simultaneously the control device that is connected with the current/voltage proving installation by data cable.Wherein, control device is a PC, and the current/voltage proving installation is program-controlled digital multimeter.The circuit of APD testing apparatus is made up of power interface, data-interface, avalanche photodide booster circuit, channel switching circuit.Its annexation is, power interface output connects the input of avalanche photodide booster circuit, road commutation circuit input is connected in the output of avalanche photodide booster circuit, booster circuit input of data-interface output avalanche photodide and channel switching circuit input, channel switching circuit output reception snow survey avalanche photo diode.Wherein, the power interface in the proving installation circuit is by USB interface U 1, serial line interface U 2, integrated package of pressure-stabilizing U 3And peripheral cell constitutes; Data-interface is by parallel interface U 4, bus transceiver U 5And peripheral cell constitutes; Booster circuit is by boost converter U 6, digital regulation resistance U 7And peripheral cell constitutes; Channel switching circuit is by code translator U 8, driver U 9And U 10, dpdt relay U 11And single-pole single-throw (SPST) relay array U 12Constitute.
The principle of work of the utility model avalanche photodide temperature offset voltage tester equipment is, light source provides flashlight with one road light source for multi-channel A PD by optical branching device or photoswitch, control device is controlled the APD proving installation, the current/voltage proving installation is measured photocurrent and the bias voltage of tested APD, control device is then according to the data that read from the current/voltage proving installation, adjust APD bias voltage size in the APD proving installation, reach ideal value up to the APD bias current, and write down the APD bias voltage that is applied.Wherein, the principle of work of APD proving installation is, after environment temperature reaches setting value, control device sends control signal, the control channel commutation circuit switches to test channel on the APD test channel of n road, by booster circuit power interface place low pressure is transformed into the high voltage that is fit to the APD operate as normal, and voltage swing is controlled by booster circuit, and can be set by control device.Control device reads the APD photocurrent that the current/voltage proving installation is measured by data cable, and booster circuit parameter in the corresponding adjustment APD proving installation, change bias voltage and the photocurrent of APD, reach ideal value up to the APD photocurrent, and the APD bias voltage that this moment applied of record, this voltage is APD desirable bias voltage under this temperature.
The advantage of the utility model avalanche photodide temperature offset voltage tester equipment is the testing efficiency height, and test accurately can be measured multi-channel A PD desirable bias voltage under different temperatures one by one.Be suitable for large-scale production
Description of drawings
Fig. 1: the utility model structural representation
Fig. 2: APD proving installation circuit block diagram
Fig. 3: APD proving installation power interface circuit connection layout
Fig. 4: APD proving installation data interface circuit and booster circuit connection layout
Fig. 5 APD proving installation channel switching circuit connection layout
Embodiment
The utility model avalanche photodide temperature offset voltage tester equipment comprises light source 1, the optical branching device 7 that is connected with light source 1 by optical attenuator 11, be connected with optical branching device 7 and be arranged on APD proving installation 5 in the high-low temperature chamber 4 by optical patchcord 6, the program-controlled digital multimeter 2 that is connected with APD proving installation 5 by p-wire 8, be connected with APD proving installation 5 by umbilical cable 10, simultaneously the PC 3 that is connected with program-controlled digital multimeter 2 by data cable 9.Wherein, the circuit of APD proving installation 5 is made up of power interface, data-interface, booster circuit, channel switching circuit, its annexation is, power interface output connects the input of avalanche photodide booster circuit, road commutation circuit input is connected in the output of avalanche photodide booster circuit, data-interface output connects input of avalanche photodide booster circuit and channel switching circuit input, channel switching circuit output reception snow survey avalanche photo diode.
In the APD proving installation circuit, power interface is by USB interface U 1, serial line interface U 2, integrated package of pressure-stabilizing U 3(MX8869EUE33), capacitor C 1～C 6, inductance L 1, voltage stabilizing diode VD 1And VD 2Constitute; Data-interface is by parallel interface U 4, bus transceiver U 5(SN74HC245), resistance R 1～R 4, triode VT 1And VT 2Constitute; Booster circuit is by boost converter U 6(LM2733x), digital regulation resistance U 7(DS1848E-010), inductance L 2, resistance R 5, capacitor C 7And diode VD 3Constitute; Channel switching circuit is by code translator U 8(CD74HC238), driver U 9(ULX2003A/MC1413D) and U 10(ULX2003A/MC1413D), dpdt relay U 11(V23079-G1001-B301) and single-pole single-throw (SPST) relay array U 12(8 SIA050000) constitutes.Its annexation is U 1One end passes through U 2With being connected to C 2, C 1, VD 1And L 1One end, L 1The other end and VD 2, C 3, C 4The other end is with being connected to+5V U 1The other end passes through U 2With C 1, C 2, VD 1, VD 2, C 3, and C 4Ground end ground connection, U 3Input end 2～5 pin meet+5V U 3Output terminal 12～15 pin, C 5And C 6One end is with being connected to 3.3V, C 5And C 6Other end ground connection, U 3Earth terminal 0,10 and 11 pin ground connection; U 4Output termination U 5Input end 2～7 pin, U 4Input termination U 5Output terminal 11 pin, U 5Input end 9 pin meet U 7Input/output terminal 1 pin, U 5Output terminal 13～15 pin meet U 8Input end 1～3 pin, U 5Output terminal 16 pin meet U 10Input end 2 pin, U 5Output terminal 17 pin meet R 1One end, R 1Another termination triode VT 2Base stage, grounded emitter, collector is through R 3Be pulled to+5V, simultaneously collector and U 7Input end 1 pin connect U 5Output terminal 18 pin meet R 2One end, R 2Another termination VT 1Base stage, grounded emitter, collector is through R 1On be connected to+5V, simultaneously and U 7Input end 2 pin connect U 7Input end 8 pin and 10 pin ground connection, 11 pin and 13 pin meet R 5One end and U 6Input end 3 pin, U 6Ground end 2 pin ground connection, input end 4 pin, 5 pin and L 2One termination+3.3V, L 2The other end and U 6Input end 1 pin meets VD 3Input end, output terminal and R 5Another termination U 6Input end 3 pin; U 8Output terminal 9～15 pin meet U 9Input end 1～7 pin, U 8Output terminal 7 pin meet U 10Input end 1 pin, U 9Ground hold 8 pin ground connection, power end 9 pin meet+5V U 9Output terminal 10～16 pin meet U 12, U 10Ground hold 8 pin ground connection, power end 9 pin meet 5V, output terminal 15 pin meet U 11Input end 12 pin, output terminal 16 pin meet U 12Input end, U 11Power end 1 pin meets 5V, and 10 pin ground connection are held on ground, and 3 pin, 4 pin, 5 pin and 9 pin meet program-controlled digital multimeter voltage end, R respectively 5And VD 3The other end, current terminal, the COM end, output terminal 8 pin meet U 12Input end.

Claims (4)

1, a kind of avalanche photodide temperature offset voltage tester equipment, it is characterized in that comprising light source, the optical branching device or the photoswitch that are connected with light source by optical attenuator, be connected with optical branching device or photoswitch and be arranged on avalanche photodide proving installation in the high-low temperature chamber by optical patchcord, the current/voltage proving installation that is connected with the avalanche photodide proving installation by p-wire, be connected with the avalanche photodide proving installation by umbilical cable, simultaneously the control device that is connected with the current/voltage proving installation by data cable.
2, avalanche photodide temperature offset voltage tester equipment as claimed in claim 1, the circuit that it is characterized in that the avalanche photodide proving installation is by power interface, data-interface, the avalanche photodide booster circuit, channel switching circuit is formed, its annexation is, power interface output connects the input of avalanche photodide booster circuit, road commutation circuit input is connected in the output of avalanche photodide booster circuit, booster circuit input of data-interface output avalanche photodide and channel switching circuit input, channel switching circuit output reception snow survey avalanche photo diode.
3, avalanche photodide temperature offset voltage tester equipment as claimed in claim 2 is characterized in that power interface in the avalanche photodide proving installation circuit is by USB interface U 1, serial line interface U 2, integrated package of pressure-stabilizing U 3And peripheral cell constitutes; Data-interface is by parallel interface U 4, bus transceiver U 5And peripheral cell constitutes; Booster circuit is by boost converter U 6, digital regulation resistance U 7And peripheral cell constitutes; Channel switching circuit is by code translator U 8, driver U 9And U 10, dpdt relay U 11Single-pole single-throw (SPST) relay array U 12Constitute.
4, avalanche photodide temperature offset voltage tester equipment as claimed in claim 1 is characterized in that control device is PC or single-chip microcomputer, and the current/voltage proving installation is program-controlled digital multimeter.
CN 200420034040 2004-06-15 2004-06-15 Avalanche photodiode temp bias voltage tester Expired - Lifetime CN2781392Y (en)

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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101387658B (en) * 2008-10-23 2011-03-16 成都优博创技术有限公司 Detection circuit for auto detecting avalanche magnitude of voltage of avalanche photodiode and method
USRE44107E1 (en) 2003-12-19 2013-03-26 Source Photonics, Inc. Multi-data-rate optical transceiver
CN101256099B (en) * 2006-06-28 2013-09-11 英特尔公司 System to calibrate on-die temperature sensor
CN103389451A (en) * 2013-07-24 2013-11-13 广东瑞谷光纤通信有限公司 Testing method and testing device of avalanche photodiode
CN101688894B (en) * 2007-06-25 2014-01-29 皇家飞利浦电子股份有限公司 Photodetector, photodetection device and method
CN103675639A (en) * 2013-12-17 2014-03-26 中国科学院微电子研究所 VDMOS component low-temperature long-distance on-line test system
CN105490735A (en) * 2015-11-19 2016-04-13 上海斐讯数据通信技术有限公司 Device and method for calibrating optical receiving module sensitivity
CN106932700A (en) * 2017-03-31 2017-07-07 深圳市芯思杰智能物联网技术有限公司 The opto-electronic device DC performance test system of transistor outline package
CN109946582A (en) * 2019-05-22 2019-06-28 北京中创为南京量子通信技术有限公司 It is a kind of for test probe, the device of optical device and its test method
CN110726919A (en) * 2019-10-25 2020-01-24 中国电子科技集团公司第四十四研究所 Array APD photoelectric parameter testing system
CN111725972A (en) * 2020-06-24 2020-09-29 武汉电信器件有限公司 Bias circuit of avalanche photodiode and power supply method
CN112461506A (en) * 2021-01-28 2021-03-09 深圳市迅特通信技术股份有限公司 Automatic test circuit for multipath APD and PIN light receiving device
CN113064044A (en) * 2021-03-31 2021-07-02 南通中瑞通信科技有限公司 Novel APD correction algorithm

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE44107E1 (en) 2003-12-19 2013-03-26 Source Photonics, Inc. Multi-data-rate optical transceiver
CN101256099B (en) * 2006-06-28 2013-09-11 英特尔公司 System to calibrate on-die temperature sensor
CN101688894B (en) * 2007-06-25 2014-01-29 皇家飞利浦电子股份有限公司 Photodetector, photodetection device and method
CN101387658B (en) * 2008-10-23 2011-03-16 成都优博创技术有限公司 Detection circuit for auto detecting avalanche magnitude of voltage of avalanche photodiode and method
CN103389451B (en) * 2013-07-24 2015-12-02 广东瑞谷光纤通信有限公司 A kind of method of testing of avalanche photodide and proving installation
CN103389451A (en) * 2013-07-24 2013-11-13 广东瑞谷光纤通信有限公司 Testing method and testing device of avalanche photodiode
CN103675639B (en) * 2013-12-17 2017-01-18 北京中科新微特科技开发股份有限公司 VDMOS component low-temperature long-distance on-line test system
CN103675639A (en) * 2013-12-17 2014-03-26 中国科学院微电子研究所 VDMOS component low-temperature long-distance on-line test system
CN105490735A (en) * 2015-11-19 2016-04-13 上海斐讯数据通信技术有限公司 Device and method for calibrating optical receiving module sensitivity
CN105490735B (en) * 2015-11-19 2017-11-24 上海斐讯数据通信技术有限公司 A kind of apparatus and method for calibrating light-receiving component sensitivity
CN106932700A (en) * 2017-03-31 2017-07-07 深圳市芯思杰智能物联网技术有限公司 The opto-electronic device DC performance test system of transistor outline package
CN109946582A (en) * 2019-05-22 2019-06-28 北京中创为南京量子通信技术有限公司 It is a kind of for test probe, the device of optical device and its test method
CN109946582B (en) * 2019-05-22 2019-08-16 北京中创为南京量子通信技术有限公司 It is a kind of for test probe, the device of optical device and its test method
CN110726919A (en) * 2019-10-25 2020-01-24 中国电子科技集团公司第四十四研究所 Array APD photoelectric parameter testing system
CN110726919B (en) * 2019-10-25 2021-10-26 中国电子科技集团公司第四十四研究所 Array APD photoelectric parameter testing system
CN111725972A (en) * 2020-06-24 2020-09-29 武汉电信器件有限公司 Bias circuit of avalanche photodiode and power supply method
CN112461506A (en) * 2021-01-28 2021-03-09 深圳市迅特通信技术股份有限公司 Automatic test circuit for multipath APD and PIN light receiving device
CN112461506B (en) * 2021-01-28 2021-06-08 深圳市迅特通信技术股份有限公司 Automatic test circuit for multipath APD and PIN light receiving device
CN113064044A (en) * 2021-03-31 2021-07-02 南通中瑞通信科技有限公司 Novel APD correction algorithm

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee

Owner name: SUOERSI PHOTOELECTRICITY ( CHENGDU ) CO., LTD.

Free format text: FORMER NAME: FEIBOCHUANG ( CHENGDU ) SCIENCE CO., LTD.

CP03 Change of name, title or address

Address after: The west of the Sichuan city of Chengdu province high tech Zone Kexinlu No. 8 Chengdu Export Processing Zone West No. 2 No. 5 standard workshop, zip code: 610017

Patentee after: Source Photonics (Chengdu) Co., Ltd.

Address before: Sichuan city of Chengdu province high tech Zone Gaopeng Avenue Hangli building 4 floor, zip code: 610041

Patentee before: Fiberxon (Chengdu) Inc.

C17 Cessation of patent right
CX01 Expiry of patent term

Expiration termination date: 20140615

Granted publication date: 20060517