CN2694477Y - 微型半导体器件封装低弧度引线专用压板 - Google Patents

微型半导体器件封装低弧度引线专用压板 Download PDF

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CN2694477Y
CN2694477Y CNU200420026901XU CN200420026901U CN2694477Y CN 2694477 Y CN2694477 Y CN 2694477Y CN U200420026901X U CNU200420026901X U CN U200420026901XU CN 200420026901 U CN200420026901 U CN 200420026901U CN 2694477 Y CN2694477 Y CN 2694477Y
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pressing plate
semiconductor device
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严红月
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JCET Group Co Ltd
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Jiangsu Changjiang Electronics Technology Co Ltd
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
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    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

本实用新型涉及一种微型半导体器件封装低弧度引线专用压板。属电子元器件封装技术领域。压板中间横向开设有若干条平行的长腰形窗口1，其特点是长腰形窗口1左右两端部与窗口中心线的夹角α即窗口角为40～50°。这样，焊头Y方向可以运行的行程也就较长，因此能满足微型器件低弧度引线封装的要求。

Description

微型半导体器件封装低弧度引线专用压板
技术领域：
本实用新型涉及一种微型半导体器件封装低弧度引线专用压板。与封装用引线框架和炉面配合使用。属半导体器件封装技术领域。
背景技术：
封装微型半导体器件是表面组装技术的基础核心。主要用于封装场效应晶体管、肖特基二极管、数字晶体管等产品。其体积小、重量轻、电性能良好，更符合电子产品发展的趋势。
从微型半导体器件侧面示意图图1中可以看出，器件塑封体树脂总高度0.5mm，引线框架3′底部向上打弯深度0.1mm，考虑器件可靠性，金线2′与塑封体树脂表面距离须保留0.1mm，那么在芯片1′厚度100μm±10μm的条件下，要求引线弧高控制在中心值0.1mm±5μm的范围。引线封装过程中所使用压板是形成低弧度引线封装的关键。对于普通器件，由于其尺寸较大，与其相配套使用的压板窗口宽度也较大，虽然其窗口角即长腰形窗口端部与其中心线的夹角α较小，仅为10～15°，但已能满足焊头Y方向运行的行程要求。而对于微型器件采用低弧度引线封装，由于器件引线框架尺寸较小，相应的与其配套使用的压板窗口宽度也较小，仅为0.1mm，如采用传统的压板，由于其窗口角较小，焊头Y方向运行的行程较短，不能有效形成低弧度引线，还容易碰断劈刀。
发明内容：
本实用新型的目的在于克服上述不足，提供一种可以满足微型半导体器件低弧度引线封装要求的专用压板。
本实用新型的目的是这样实现的：一种微型半导体器件封装低弧度引线专用压板，压板中间横向开设有若干条平行的长腰形窗口，其特点是长腰形窗口左右两端部与窗口中心线的夹角α即窗口角为40～50°。这样，焊头Y方向可以运行的行程也就较长，因此能满足微型半导体器件低弧度引线封装的要求。
附图说明：
图1为采用低弧度引线封装的微型半导体器件侧面示意图。
图2为本实用新型压板正视图。
图3为本实用新型压板侧视图。
图4为本实用新型压板背视图。
图5为图2的A-A剖示图。
具体实施方式：
如图2～3，本实用新型为一种微型半导体器件封装低弧度引线专用压板。压板中间横向开设有6条平行的长腰形窗口1，压板正面窗口1周边设置有与窗口上表面平齐的一框形下平台2，下平台2周边向上凸出设置有一框形上平台3，上平台3左右两侧向外延伸凸出设置有连接侧边4，侧边4上开设有连接通孔5。如图4，压板背面窗口1两边横向开设有6条平行的长凹槽6，用于有效压紧器件引线框架。如图5，长腰形窗口1左右两端部与窗口中心线的夹角α即窗口角为40～50°。

Claims (4)

1、一种微型半导体器件封装低弧度引线专用压板，压板中间横向开设有若干条平行的长腰形窗口(1)，其特征在于长腰形窗口(1)左右两端部与窗口中心线的夹角α即窗口角为40～50°。
2、根据权利要求1所述的一种微型半导体器件封装低弧度引线专用压板，其特征在于压板背面窗口(1)两边横向开设有若干条平行的长凹槽(6)。
3、根据权利要求1或2所述的一种微型半导体器件封装低弧度引线专用压板，其特征在于压板正面窗口(1)周边设置有与窗口上表面平齐的框形下平台(2)，下平台(2)周边向上凸出设置有框形上平台(3)，上平台(3)左右两侧向外延伸凸出设置有连接侧边(4)。
4、根据权利要求3所述的一种微型半导体器件封装低弧度引线专用压板，其特征在于侧边(4)上开设有连接通孔(5)。
CNU200420026901XU 2004-05-09 2004-05-09 微型半导体器件封装低弧度引线专用压板 Expired - Lifetime CN2694477Y (zh)

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