CN2687911Y - Tunable grating external-cavity semiconductor laser - Google Patents
Tunable grating external-cavity semiconductor laser Download PDFInfo
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- CN2687911Y CN2687911Y CN 200320130968 CN200320130968U CN2687911Y CN 2687911 Y CN2687911 Y CN 2687911Y CN 200320130968 CN200320130968 CN 200320130968 CN 200320130968 U CN200320130968 U CN 200320130968U CN 2687911 Y CN2687911 Y CN 2687911Y
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Abstract
The utility model relates to a semiconductor laser, in particular to a tunable grating external-cavity semiconductor laser, which can be widely applied to the fields of the optical communication, the optical switching, the optical storage, the optical fiber gyro, the metering measuring, etc., belonging to the technical field of the laser. The laser comprises a rotation platform, a semiconductor laser, etc. ; the plane mirror and the blazed grating are fixed on the linked rotation platform together; the semiconductor laser outputs laser through a lens system, the obtained parallel light is incident on the blazed grating, and first stage and zero stage diffracted light can be obtained after the light splitting through the grating; the first stage diffracted light is fed back to the active area of the semiconductor laser, acting with the light field of the active area, and accordingly, the output of single longitudinal mode and narrow linewidth is realized. The utility model has the advantages that the directionality of the output light of the laser is good; the problem that the output beam is deflected is overcome; the operation is convenient, and the data repeatability is good; the tunable grating external-cavity semiconductor laser can be continuously operated for more than four hours, having no mode skip phenomenon; the miniaturization and the compaction of the laser are realized.
Description
Technical field
The utility model relates to the semiconductor laser of a kind of semiconductor laser, particularly tunable grating external-cavity, can be widely used in fields such as optical communication, light exchange, optical storage, optic fiber gyroscope, measurement, belongs to laser technology field.
Background technology
The wavelength tuning technology of light source is the important component part of laser technology, the tunable grating external-cavity semiconductor laser has outstanding advantage such as compact conformation, conversion efficiency height, single mode output, low price, in fields such as optical communication, light exchange, optical storage, optic fiber gyroscope, measurements, great application prospect is arranged
[Dai?Wutao，Guo?Shuguang，Fan?Yaxian，et?al“External?cavity?semiconductor?Laserwith?grating?feedback?for?real-time?Raman?spectrum?analyzer”Journal?ofOptoelectronics?Laser，2001(11)，vol.12，No.11，1112-1115]
For commercial semiconductor laser (LD) now, quote the exocoel technology, can make the LD of many longitudinal modes realize narrow linewidth, the stable output of single longitudinal mode, and can in relative broad range, carry out wavelength tuning.The threshold value of laser reduction simultaneously, wavelength are almost suppressed fully with the drift of temperature, make its performance obtain very big improvement.
The diffraction loss that Littman grating external-cavity structure is introduced is big, power output is low.The loss of Littrow grating external-cavity LD laser is low, and still, the beam direction of output deflects along with the rotation of grating when tuning, and this has brought new trouble for actual the use.The present invention proposes a kind of method of novelty, grating and plane mirror are placed on the same rotation platform, and the platform rotating shaft is overlapped with the intersection of grating and mirror plane, reach the purpose of wavelength tuning by the minor rotation of rotation platform, guaranteed that simultaneously the orientation of output beam does not change.Whole laser is of a size of 12 * 8 * 3 (cm3), can be placed in the palm fully, and improve the output facula quality with prism.Laser output class square focus spot after the improvement, the half intensity overall with of spectral line have reached 0.06nm (being subjected to the spectrometer resolution limit), and tuning range is 7.6nm, and the mode hopping phenomenon was not observed in the continuous running of laser in 4 hours.
Summary of the invention
The purpose of this utility model is the problem for caused output beam orientation deflection in the grating external cavity semiconductor laser tuning process that solves the Littrow structure, solves laser works reliability and miniaturization issues.Design philosophy of the present utility model is to be based upon on Theoretical Calculation and the error analysis basis, the method novelty, simple, compact, be easy to making, easy operating, steady operation for a long time.
The technical solution of the utility model: this tunable grating external-cavity semiconductor laser, it comprises rotation platform 1, change and revolve axle 2, semiconductor laser 3, lens combination 4, plane mirror mirror 5, balzed grating, 6 and right angle prism 7, drift angle is α, plane mirror is fixed on the interlock rotation platform with balzed grating,, make plane mirror and balzed grating, two planes perpendicular to rotation platform and intersect at rotation axis, semiconductor laser is exported laser through lens combination, the directional light that obtains behind the collimation, incide on the balzed grating,, obtain one-level and zero order diffracted light through grating beam splitting, first-order diffraction light is fed back to the semiconductor laser active area, with light field effect in the active area, thereby realize the output of single longitudinal mode narrow linewidth, zero order diffracted light as output light through the reflection of level crossing again through right angle prism coupling output again, be fixed on the grating face on the rotation platform and the intersection of plane mirror surface and overlap with the rotating shaft of rotation platform.
The beneficial effects of the utility model:
We have done the repeatedly experiment of repeatability on this table apparatus, and the result proves that the output light direction of laser is good, has overcome the grating external cavity semiconductor laser problem that the direction of output beam deflects in tuning process.This device is convenient to operation, function admirable, and it is good that measurement data repeats surname.Record with spectrometer, the wide 0.06nm (shown in Figure 2) that reaches of the half intensity of the output spectrum line of entire device, tuning range reaches 7.6nm, and the orientation of output beam does not change.Laser can turn round more than 4 hours continuously, and working stability is normal.Realized the laser compactization.
Description of drawings
Fig. 1. tunable grating external-cavity semiconductor laser structure schematic diagram
Fig. 2. the output spectrum figure of grating external cavity semiconductor laser
Among the figure: 1. axle 3. semiconductor lasers 4. lens combinations 5. plane mirror mirrors 6. balzed grating,s 7. right angle prisms 8. apex angle are revolved in rotation platform 2. commentaries on classics,
Embodiment
Below in conjunction with accompanying drawing the utility model is specifically described:
This tunable grating external-cavity semiconductor laser, it comprises rotation platform 1, change and revolve axle 2, semiconductor laser 3, lens combination 4, plane mirror mirror 5, balzed grating, 6 and right angle prism 7, drift angle is α, plane mirror is fixed on the interlock rotation platform with balzed grating,, make plane mirror and balzed grating, two planes perpendicular to rotation platform and intersect at rotation axis, semiconductor laser is exported laser through lens combination, the directional light that obtains behind the collimation, incide on the balzed grating,, obtain one-level and zero order diffracted light through grating beam splitting, first-order diffraction light is fed back to the semiconductor laser active area, with light field effect in the active area, thereby realize the output of single longitudinal mode narrow linewidth, zero order diffracted light as output light through the reflection of level crossing again through right angle prism coupling output again, be fixed on the grating face on the rotation platform and the intersection of plane mirror surface and overlap with the rotating shaft of rotation platform.
Lens combination is the four quasi-optical system of group lens, and balzed grating, is the balzed grating, of d=1200 line/mm, and apex angle is 41 ° ~ 42 °.The angle that the fine setting rotation platform is promptly adjusted grating can realize wavelength tuning.This device is because plane mirror and grating interlock no longer change the output light direction with the rotation of grating.Prism can make rectangular light spots dwindle into the dead square hot spot.
Guarantee that by machining accuracy the semiconductor laser emitted light beams is parallel to turntable, the angle of adjusting grating and plane mirror makes the active area of the first-order diffraction light reflected back semiconductor laser of grating, makes the running of laser single longitudinal mode.0 order diffraction light of grating is injected prism after mirror reflects, the dead square hot spot that one of prism outgoing is dwindled.Fixed grating and plane mirror make the plane of reflection of grating diffration plane and level crossing all want good vertical rotation platform.The intersection on two planes is rotating shaft.Platform will guarantee that the semiconductor laser emitted light beams is parallel to turntable all the time when rotating.
In the external-cavity semiconductor laser system, owing to machining cause the reason of output light azimuth deviation have following some: 1. the angle β of the plane of reflection of grating planar and speculum and the error of designing requirement; 2. the vertical situation of grating, plane mirror and rotatable platform; 3. LD exports light and the not parallel error that causes of rotatable platform; 4. the error between the rotating shaft of the intersection on optical grating diffraction plane and flat mirror reflects plane and actual rotatable platform.
Proved that through calculating us system's output direction of light is still constant if grating and speculum two plane intersection lines do not overlap with rotating shaft, just micro displacement can take place in light beam.
Claims (2)
1. tunable grating external-cavity semiconductor laser, it is characterized in that: it comprises rotation platform (1), change and revolve axle (2), semiconductor laser (3), lens combination (4), plane mirror mirror (5), balzed grating, (6) and right angle prism (7), drift angle is α, plane mirror is fixed on the interlock rotation platform with balzed grating,, make plane mirror and balzed grating, two planes perpendicular to rotation platform and intersect at rotation axis, semiconductor laser is exported laser through lens combination, the directional light that obtains behind the collimation, incide on the balzed grating,, obtain one-level and zero order diffracted light through optical grating diffraction, first-order diffraction light is fed back to the semiconductor laser active area, with light field effect in the active area, thereby realize the output of single longitudinal mode narrow linewidth, zero order diffracted light is exported through the right angle prism coupling through the reflection of level crossing as output light more again.
2. rotation platform according to claim 1 is characterized in that: be fixed on the grating face on the rotation platform and the intersection of plane mirror surface and overlap with the rotating shaft of rotation platform.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200320130968 CN2687911Y (en) | 2003-12-31 | 2003-12-31 | Tunable grating external-cavity semiconductor laser |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200320130968 CN2687911Y (en) | 2003-12-31 | 2003-12-31 | Tunable grating external-cavity semiconductor laser |
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| CN2687911Y true CN2687911Y (en) | 2005-03-23 |
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| CN 200320130968 Expired - Fee Related CN2687911Y (en) | 2003-12-31 | 2003-12-31 | Tunable grating external-cavity semiconductor laser |
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Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100478738C (en) * | 2006-02-24 | 2009-04-15 | 中国科学院半导体研究所 | Tunable laser filter |
| WO2009097740A1 (en) * | 2008-02-04 | 2009-08-13 | National Institute Of Metrology P.R.China | Monolithic folded f-p cavity and semiconductor laser using the same |
| CN101826701A (en) * | 2010-05-06 | 2010-09-08 | 山东远普光学股份有限公司 | Mode jump free continuous tuning semiconductor laser |
| CN101593931B (en) * | 2009-06-25 | 2011-01-05 | 浙江大学 | Semiconductor laser with wavelength capable of tuning without mode skip |
| WO2011000153A1 (en) * | 2009-06-30 | 2011-01-06 | 山东远普光学股份有限公司 | Continuous mode-hop-free grating-tuned external cavity semiconductor laser |
| WO2011137590A1 (en) * | 2010-05-06 | 2011-11-10 | 山东远普光学股份有限公司 | Mode-hop-free continuous tuning semiconductor laser |
| CN102439804A (en) * | 2011-09-02 | 2012-05-02 | 华为技术有限公司 | Wavelength adjustable laser and wavelength selection method of adjustable laser |
| CN101521352B (en) * | 2008-02-28 | 2012-07-04 | 中国计量科学研究院 | Semiconductor laser device |
| CN101630810B (en) * | 2008-07-14 | 2012-10-03 | 中国计量科学研究院 | Littrow-structural grating external cavity semiconductor laser and frequency tuning method |
| CN104048657A (en) * | 2014-07-08 | 2014-09-17 | 中国科学院武汉物理与数学研究所 | Physical unit device of chip nuclear magnetic resonance gyroscope |
| CN104897376A (en) * | 2015-06-19 | 2015-09-09 | 湖北航天技术研究院总体设计所 | Laser line width measuring method and system |
| CN107634448A (en) * | 2017-10-24 | 2018-01-26 | 苏州朝光光电有限公司 | A kind of Novel external-cavity semiconductor laser |
| CN108493762A (en) * | 2018-01-26 | 2018-09-04 | 中国科学院上海光学精密机械研究所 | Semiconductor laser intensity noise restraining device based on nonlinear effect and suppressing method |
| CN109297927A (en) * | 2018-08-21 | 2019-02-01 | 深圳市太赫兹科技创新研究院 | The debugging device and method of spectrometer |
| CN109936047A (en) * | 2019-04-15 | 2019-06-25 | 山西大学 | A kind of grating external-cavity feedback semiconductor laser and its adjusting method |
| CN110112652A (en) * | 2019-05-16 | 2019-08-09 | 中国科学院半导体研究所 | Extenal cavity tunable laser device and wavelength tuning method |
| CN112292609A (en) * | 2018-06-14 | 2021-01-29 | 松下知识产权经营株式会社 | Object detection device and photodetector |
| US11901699B2 (en) | 2020-11-20 | 2024-02-13 | Suzhou Institute Of Nano-Tech And Nano-Bionics (Sinano) , Chinese Academy Of Sciences | Narrow linewidth laser |
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2003
- 2003-12-31 CN CN 200320130968 patent/CN2687911Y/en not_active Expired - Fee Related
Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100478738C (en) * | 2006-02-24 | 2009-04-15 | 中国科学院半导体研究所 | Tunable laser filter |
| US8107509B2 (en) | 2008-02-04 | 2012-01-31 | National Institute Of Metrology P.R. China | Monolithic folded F-P cavity and semiconductor laser using the same |
| WO2009097740A1 (en) * | 2008-02-04 | 2009-08-13 | National Institute Of Metrology P.R.China | Monolithic folded f-p cavity and semiconductor laser using the same |
| CN101521352B (en) * | 2008-02-28 | 2012-07-04 | 中国计量科学研究院 | Semiconductor laser device |
| CN101630810B (en) * | 2008-07-14 | 2012-10-03 | 中国计量科学研究院 | Littrow-structural grating external cavity semiconductor laser and frequency tuning method |
| CN101593931B (en) * | 2009-06-25 | 2011-01-05 | 浙江大学 | Semiconductor laser with wavelength capable of tuning without mode skip |
| WO2011000153A1 (en) * | 2009-06-30 | 2011-01-06 | 山东远普光学股份有限公司 | Continuous mode-hop-free grating-tuned external cavity semiconductor laser |
| WO2011137590A1 (en) * | 2010-05-06 | 2011-11-10 | 山东远普光学股份有限公司 | Mode-hop-free continuous tuning semiconductor laser |
| CN101826701A (en) * | 2010-05-06 | 2010-09-08 | 山东远普光学股份有限公司 | Mode jump free continuous tuning semiconductor laser |
| CN102439804A (en) * | 2011-09-02 | 2012-05-02 | 华为技术有限公司 | Wavelength adjustable laser and wavelength selection method of adjustable laser |
| WO2012149721A1 (en) * | 2011-09-02 | 2012-11-08 | 华为技术有限公司 | Wavelength tunable laser and wavelength selection method for tunable laser |
| CN104048657B (en) * | 2014-07-08 | 2016-07-06 | 中国科学院武汉物理与数学研究所 | A kind of chip core magnetic resonance gyroscope physical location device |
| CN104048657A (en) * | 2014-07-08 | 2014-09-17 | 中国科学院武汉物理与数学研究所 | Physical unit device of chip nuclear magnetic resonance gyroscope |
| CN104897376A (en) * | 2015-06-19 | 2015-09-09 | 湖北航天技术研究院总体设计所 | Laser line width measuring method and system |
| CN104897376B (en) * | 2015-06-19 | 2018-01-05 | 湖北航天技术研究院总体设计所 | A kind of laser linewidth measuring method and system |
| CN107634448A (en) * | 2017-10-24 | 2018-01-26 | 苏州朝光光电有限公司 | A kind of Novel external-cavity semiconductor laser |
| CN107634448B (en) * | 2017-10-24 | 2024-04-26 | 苏州朝光光电有限公司 | External cavity semiconductor laser |
| CN108493762A (en) * | 2018-01-26 | 2018-09-04 | 中国科学院上海光学精密机械研究所 | Semiconductor laser intensity noise restraining device based on nonlinear effect and suppressing method |
| CN108493762B (en) * | 2018-01-26 | 2020-10-16 | 中国科学院上海光学精密机械研究所 | Semiconductor laser intensity noise suppression device and suppression method based on nonlinear effect |
| CN112292609A (en) * | 2018-06-14 | 2021-01-29 | 松下知识产权经营株式会社 | Object detection device and photodetector |
| CN109297927A (en) * | 2018-08-21 | 2019-02-01 | 深圳市太赫兹科技创新研究院 | The debugging device and method of spectrometer |
| CN109936047A (en) * | 2019-04-15 | 2019-06-25 | 山西大学 | A kind of grating external-cavity feedback semiconductor laser and its adjusting method |
| CN109936047B (en) * | 2019-04-15 | 2020-04-17 | 山西大学 | Grating external cavity feedback semiconductor laser and adjusting method thereof |
| CN110112652A (en) * | 2019-05-16 | 2019-08-09 | 中国科学院半导体研究所 | Extenal cavity tunable laser device and wavelength tuning method |
| US11901699B2 (en) | 2020-11-20 | 2024-02-13 | Suzhou Institute Of Nano-Tech And Nano-Bionics (Sinano) , Chinese Academy Of Sciences | Narrow linewidth laser |
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