CN2666928Y - Apparatus for chemical gas phase depositing diamond film by plasma heat wire method - Google Patents
Apparatus for chemical gas phase depositing diamond film by plasma heat wire method Download PDFInfo
- Publication number
- CN2666928Y CN2666928Y CNU032537166U CN03253716U CN2666928Y CN 2666928 Y CN2666928 Y CN 2666928Y CN U032537166 U CNU032537166 U CN U032537166U CN 03253716 U CN03253716 U CN 03253716U CN 2666928 Y CN2666928 Y CN 2666928Y
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- China
- Prior art keywords
- filament
- water cooled
- cooled electrode
- electrode
- diamond film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 27
- 239000010432 diamond Substances 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title abstract description 7
- 238000000151 deposition Methods 0.000 title abstract description 5
- 239000000126 substance Substances 0.000 title 1
- 239000000463 material Substances 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 20
- 238000004050 hot filament vapor deposition Methods 0.000 claims description 17
- 238000009413 insulation Methods 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 5
- 230000008021 deposition Effects 0.000 abstract description 4
- 229910052582 BN Inorganic materials 0.000 abstract description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 abstract description 2
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 abstract description 2
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 2
- 239000012528 membrane Substances 0.000 abstract 10
- 239000010408 film Substances 0.000 description 22
- 238000001816 cooling Methods 0.000 description 4
- 230000003245 working effect Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- KRQUFUKTQHISJB-YYADALCUSA-N 2-[(E)-N-[2-(4-chlorophenoxy)propoxy]-C-propylcarbonimidoyl]-3-hydroxy-5-(thian-3-yl)cyclohex-2-en-1-one Chemical compound CCC\C(=N/OCC(C)OC1=CC=C(Cl)C=C1)C1=C(O)CC(CC1=O)C1CCCSC1 KRQUFUKTQHISJB-YYADALCUSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 235000019628 coolness Nutrition 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
The utility model relates to a plasma hot-wire method chemical vapor deposition diamond membrane device, pertaining to chemical vapor deposition field. The utility model brings in plasma glow discharge in traditional hot-wire method chemical vapor deposition membrane device, namely, an upper part of the hot-wire in a vacuum chamber of the chemical vapor deposition device is provided with an upper electrode; high deflected voltage is acted between a base platform and an adjustable disc on the upper electrode by a DC power supply to make the glow discharge produced between the base platform and the disc, thus largely improving the growth rate of the diamond membrane; furthermore, as the filament is not subject to the deflected voltage, the service life of the filament is largely improved. In addition, the utility model can conveniently carry out the doping deposition of the membrane materials such as diamond membrane, etc. in an air pressure range of 50Pa through 6000Pa, can be used for preparing the membranes such as similar diamond membranes, carbon nitride membranes, boron nitride membranes, carborundum membranes, etc. and for doping deposition, and has extremely wide applicable range.
Description
Technical field
The utility model relates to a kind of device of plasma hot-filament cvd reactor diamond film, belongs to the chemical vapour deposition field.
Background technology
The method of low pressure synthesis of diamond film mainly contains microwave method and hot filament CVD etc., and the latter is owing to film forming purity height, even structure, efficient height, extensively paid close attention to the advantage such as low that requires of equipment.For nucleation rate and the sedimentation rate that improves diamond film, traditional hot filament CVD has developed into the auxiliary hot filament CVD of bias voltage, promptly applies direct-current biasing between the filament of traditional hot wire chemical vapor deposition apparatus and base station.But there is obvious deficiency in actual applications in this method, and promptly the direct-current biasing that applies between filament and base station can not too high (generally being lower than 300V), otherwise can produce harm to filament, have a strong impact on the work-ing life of key position-----filament of hot wire process.Certainly will cause the sedimentation rate of diamond film to be difficult to obtain substantial raising like this.
Summary of the invention
The novel purpose of this use is to overcome the shortcoming of above-mentioned prior art, provides a kind of and not only can prolong filament work-ing life significantly, but also can make the growth velocity of diamond film obtain the device of the novel plasma hot-filament cvd reactor diamond film of substantial raising.
The purpose of this utility model can realize by following approach: it comprises vacuum chamber, the inlet system that links to each other with vacuum chamber and vacuum system, wherein:
1, the water cooled electrode that can be used as base station is housed on the chassis of vacuum chamber;
2, one or more parallel with base station, equally distributed filament is set above base station, this filament is fixed on the support that is connected with the insulation of vacuum chamber chassis;
3, be provided with the water cooled electrode (top electrode) that is connected with the insulation of vacuum chamber loam cake above filament, this electrode is provided with disk, and this disk is between filament and the top electrode.
4, lower electrode links to each other with the positive and negative electrode of direct supply respectively with top electrode.
The purpose of this utility model can also realize by following approach: the insulation of its lower electrode and vacuum chamber chassis is connected, and is provided with thermopair in this electrode interior, and the sample on base station surface is carried out thermometric;
Filament 5-15mm place above base station is provided with, and the filament two ends apply 0-60V direct current (or interchange) voltage and heat; Its diameter is 0.5-1.2mm, and material is Mo, W, Ta silk;
Can between filament and top electrode, move up and down at the disk that is provided with on the top electrode; Voltage between top electrode and the lower electrode is adjustable between the 0-1200V.
Principle of work of the present utility model is to introduce plasma glow discharge in the hot-filament cvd reactor device, promptly the filament in vacuum chamber above a top electrode is set.Between the adjustable disk on base station and the top electrode, apply bias voltage, make between base station and the disk and produce glow discharge by direct supply, thus the growth of promotion diamond film; Owing to no longer apply bias voltage on the filament, so be greatly improved its work-ing life.In addition, as with top electrode as negative electrode, then can on disk, place dopant, as the materials such as oxide compound of boron, plasma to its heating and the effect of sputter under, reach thin-film materials such as diamond film carried out adulterated purpose.
By as can be seen above, the utility model has distinguishing feature with respect to prior art:
1, plasma hot-filament cvd reactor diamond film device of the present utility model can apply higher bias voltage than traditional hot-filament cvd reactor diamond film device, is very beneficial for the growth of diamond film.And, no longer applying bias voltage on the filament, be greatly improved its work-ing life.
2, the top electrode of this device can be used as negative electrode, and the disk on it can be placed target materials such as dopant, carries out the doping of diamond film under the effect of plasma aura and sputter.
3, the polarity of the upper/lower electrode of this device is interchangeable, carries out the doping deposition of diamond film.
4, the utility model device can also be used to prepare the film and the depositions of mixing such as diamond-film-like, carbon nitride films, boron nitride film, silicon carbide film except preparing the diamond film, and range of application is very extensive.
Description of drawings
The device synoptic diagram of Fig. 1 the utility model plasma hot-filament cvd reactor diamond film.
Embodiment
The specific embodiment of the utility model structure as shown in Figure 1.
The device of the utility model plasma hot-filament cvd reactor diamond film as shown in Figure 1, inlet system 2 and vacuum system 3 compositions that it mainly contains vacuum chamber 1, links to each other with vacuum chamber, wherein:
The water cooled electrode base station that is connected with vacuum chamber 1 chassis insulation is housed on the chassis of vacuum chamber 1, or is called (lower electrode), and be provided with thermopair 10, the sample 9 on base station 4 surfaces is carried out thermometric in these electrode 4 inside; Sample substrate 9 after the processing places on the base station 4;
Above base station 4 the 5-15mm place be provided with many with base station 4 parallel, equally distributed filaments 5, these filament 5 diameters are 0.5-1.2mm, material is Mo, W, Ta silk, be fixed on support 6 that vacuum chamber 1 chassis insulation is connected on; Filament 5 two ends apply 0-60V direct current (or interchange) voltage by additional power source 11 and heat;
Be provided with the water cooled electrode (top electrode) 7 that is connected with the insulation of vacuum chamber 1 loam cake above filament 5, this electrode 7 is provided with disk 8 moving up and down, and this disk 8 is between filament 5 and the top electrode 7.
Last water cooled electrode 7 and following water cooled electrode 4 are by water- cooling system 12,13 coolings, and wherein, 12 is the water-cooling system import, and 13 are the water-cooling system outlet.
Claims (5)
1, a kind of device of plasma hot-filament cvd reactor diamond film, it comprises vacuum chamber, the inlet system that links to each other with vacuum chamber and vacuum system, it is characterized in that:
(1) the following water cooled electrode that also can be used as base station is housed on the chassis of vacuum chamber;
(2) above following water cooled electrode one or more, equally distributed filament parallel with following water cooled electrode is set, this filament is fixed on the support that is connected with the insulation of vacuum chamber chassis;
(3) be provided with above the filament be connected with vacuum chamber loam cake insulation on water cooled electrode, this electrode is provided with disk, this disk is between filament and the last water cooled electrode;
(4) water cooled electrode links to each other with the positive and negative electrode of direct supply respectively with last water cooled electrode down.
2, the device of plasma hot-filament cvd reactor diamond film according to claim 1, it is characterized in that, following water cooled electrode is connected with the insulation of vacuum chamber chassis, and is provided with thermopair in this electrode interior, and the sample that descends the water cooled electrode surface is carried out thermometric.
3, the device of plasma hot-filament cvd reactor diamond film according to claim 2 is characterized in that, can move up and down between filament and last water cooled electrode at the disk that is provided with on the last water cooled electrode.
4, the device of plasma hot-filament cvd reactor diamond film according to claim 3 is characterized in that, the voltage between last water cooled electrode and the following water cooled electrode is adjustable between the 0-1200V.
5, the device of plasma hot-filament cvd reactor diamond film according to claim 4 is characterized in that, filament is provided with at the 5-15mm place above following water cooled electrode; The filament two ends apply 0-60V direct current (or interchange) voltage and heat; The diameter of filament is 0.5-1.2mm; Material is Mo, W, Ta silk.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU032537166U CN2666928Y (en) | 2003-09-23 | 2003-09-23 | Apparatus for chemical gas phase depositing diamond film by plasma heat wire method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU032537166U CN2666928Y (en) | 2003-09-23 | 2003-09-23 | Apparatus for chemical gas phase depositing diamond film by plasma heat wire method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2666928Y true CN2666928Y (en) | 2004-12-29 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU032537166U Expired - Fee Related CN2666928Y (en) | 2003-09-23 | 2003-09-23 | Apparatus for chemical gas phase depositing diamond film by plasma heat wire method |
Country Status (1)
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|---|---|
| CN (1) | CN2666928Y (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100453696C (en) * | 2007-02-01 | 2009-01-21 | 南京航空航天大学 | CVD diamond film continuous preparation system |
| CN100500951C (en) * | 2007-02-07 | 2009-06-17 | 吉林大学 | Device and method for high-speed growth of diamond single-crystal |
| CN102011102A (en) * | 2010-12-22 | 2011-04-13 | 郑锦华 | Normal-temperature deposition equipment for high-interfacial strength diamond film materials and method thereof |
| CN1906127B (en) * | 2005-01-05 | 2012-01-11 | 日本普瑞伦有限责任公司 | Apparatus for manufacturing carbon film by plasma CVD, method for manufacturing the same, and carbon film |
| CN102560400A (en) * | 2012-01-17 | 2012-07-11 | 中国科学院研究生院 | Method for doping silicon-based film by eutectic growth |
| CN102719804A (en) * | 2012-07-02 | 2012-10-10 | 兰州大学 | Growing device of gas inner circulation type hot wire chemical vapor deposition (CVD) diamond films |
| US8307782B2 (en) | 2007-12-26 | 2012-11-13 | Kochi Industrial Promotion Center | Deposition apparatus and deposition method |
| CN103643218A (en) * | 2013-11-14 | 2014-03-19 | 中山市创科科研技术服务有限公司 | Simple apparatus for preparing diamond film |
| CN104099585A (en) * | 2013-04-09 | 2014-10-15 | 中国科学院大连化学物理研究所 | Apparatus and method for preparing silicon thin film through combination of plasma-enhanced chemical vapor deposition, hot wire chemical vapor deposition and bias technology |
| CN105018900A (en) * | 2015-06-05 | 2015-11-04 | 刘南林 | Gaseous phase printing technology and device |
| CN109811298A (en) * | 2019-03-19 | 2019-05-28 | 中南大学 | Hard alloy cutter preprocess method and device before a kind of deposition of diamond coatings |
| CN109825821A (en) * | 2019-03-19 | 2019-05-31 | 中南大学 | A kind of diamond/CBN composite coating hard alloy cutter, preparation method and device |
| CN110423994A (en) * | 2019-08-10 | 2019-11-08 | 上海妙壳新材料科技有限公司 | A kind of diamond-like coating moves back membrane treatment appts and its application method |
| CN113604793A (en) * | 2021-07-13 | 2021-11-05 | 北京科技大学 | Pulse hollow cathode auxiliary hot wire chemical vapor deposition device and method |
-
2003
- 2003-09-23 CN CNU032537166U patent/CN2666928Y/en not_active Expired - Fee Related
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1906127B (en) * | 2005-01-05 | 2012-01-11 | 日本普瑞伦有限责任公司 | Apparatus for manufacturing carbon film by plasma CVD, method for manufacturing the same, and carbon film |
| CN100453696C (en) * | 2007-02-01 | 2009-01-21 | 南京航空航天大学 | CVD diamond film continuous preparation system |
| CN100500951C (en) * | 2007-02-07 | 2009-06-17 | 吉林大学 | Device and method for high-speed growth of diamond single-crystal |
| US8307782B2 (en) | 2007-12-26 | 2012-11-13 | Kochi Industrial Promotion Center | Deposition apparatus and deposition method |
| CN102011102A (en) * | 2010-12-22 | 2011-04-13 | 郑锦华 | Normal-temperature deposition equipment for high-interfacial strength diamond film materials and method thereof |
| CN102560400A (en) * | 2012-01-17 | 2012-07-11 | 中国科学院研究生院 | Method for doping silicon-based film by eutectic growth |
| CN102719804A (en) * | 2012-07-02 | 2012-10-10 | 兰州大学 | Growing device of gas inner circulation type hot wire chemical vapor deposition (CVD) diamond films |
| CN102719804B (en) * | 2012-07-02 | 2014-12-10 | 兰州大学 | Growing device of gas inner circulation type hot wire chemical vapor deposition (CVD) diamond films |
| CN104099585A (en) * | 2013-04-09 | 2014-10-15 | 中国科学院大连化学物理研究所 | Apparatus and method for preparing silicon thin film through combination of plasma-enhanced chemical vapor deposition, hot wire chemical vapor deposition and bias technology |
| CN103643218A (en) * | 2013-11-14 | 2014-03-19 | 中山市创科科研技术服务有限公司 | Simple apparatus for preparing diamond film |
| CN105018900A (en) * | 2015-06-05 | 2015-11-04 | 刘南林 | Gaseous phase printing technology and device |
| CN109811298A (en) * | 2019-03-19 | 2019-05-28 | 中南大学 | Hard alloy cutter preprocess method and device before a kind of deposition of diamond coatings |
| CN109825821A (en) * | 2019-03-19 | 2019-05-31 | 中南大学 | A kind of diamond/CBN composite coating hard alloy cutter, preparation method and device |
| CN110423994A (en) * | 2019-08-10 | 2019-11-08 | 上海妙壳新材料科技有限公司 | A kind of diamond-like coating moves back membrane treatment appts and its application method |
| CN113604793A (en) * | 2021-07-13 | 2021-11-05 | 北京科技大学 | Pulse hollow cathode auxiliary hot wire chemical vapor deposition device and method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |