CN2666031Y - Five-levels bidirectional inverted middle and high voltage frequency conversion power supply device - Google Patents
Five-levels bidirectional inverted middle and high voltage frequency conversion power supply device Download PDFInfo
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- CN2666031Y CN2666031Y CN 200320107353 CN200320107353U CN2666031Y CN 2666031 Y CN2666031 Y CN 2666031Y CN 200320107353 CN200320107353 CN 200320107353 CN 200320107353 U CN200320107353 U CN 200320107353U CN 2666031 Y CN2666031 Y CN 2666031Y
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Abstract
A middle-high voltage variable-frequency power supply device with five-level bidirectional conversion consists of an inductance, an electronic switching device and a filter capacitor. The main circuit comprises three inductances, 48 IGBT devices or IGCT devices, 36 diodes and four filter capacitors. The main circuit also comprises six bridge legs and four capacitors that are sequentially connected in series and then in parallel connected with each other. Eight IGBT or IGCT devices are sequentially connected in series with each other and form a bridge leg, the eight IGBT or IGCT devices are sequentially connected in series with each other and form a bridge leg, the eight IGBT or IGCT devices are sequentially connected in series with each other and form a bridge leg, the eight IGBT or IGCT devices are sequentially connected in series with each other and form a bridge leg, the eight IGBT or IGCT devices are sequentially connected in series with each other and form a bridge leg, and the eight IGBT or IGCT devices are sequentially connected in series with each other and form a bridge leg. Compared with the prior art, the utility model reduces the transformers, thereby deducing the cost and the volume of the device and increasing the efficiency. The utility model can also ensure the bidirectional flow of the energy between the power network and the load.
Description
Technical field: the utility model relates to frequency changing power device, relates in particular to the mesohigh frequency changing power device of the two-way inversion of five level.
Background technology: the mesohigh variable frequency power supply that existing device has relates generally to dual mode: first kind of---low---high structure that is called height, be characterized in that a mesohigh power supply becomes low-voltage by transformer and is connected on the low-voltage variable frequency supply unit, the output of last frequency changing power device becomes needed mesohigh power supply by transformer again; Second kind is called height---high structure, be characterized in the mesohigh power supply is become a plurality of separate low pressure phase shift windings by transformer, and each low pressure winding is carried out after the inversion series connection mutually again become needed mesohigh power supply.In these two kinds of structures, all need bulky transformer, make entire equipment bulky like this, and because the existence of transformer causes overall system efficiency to descend.The difficulty that in these two kinds of structures, has the two-way transmission of energy.
The utility model content: the purpose of this utility model is, overcome the deficiencies in the prior art part, the mesohigh frequency changing power device of the two-way inversion of a kind of five level is provided, thereby the bulky and inefficient problem of entire equipment in the solution prior art, solve the difficulty of the two-way transmission of energy simultaneously, under identical power condition, make the volume-diminished of frequency changing power device, efficient improves, and realizes the two-way flow of energy.The mesohigh frequency changing power device of the two-way inversion of five level described in the utility model includes inductance, electronic switching device and filter capacitor and forms.In the main circuit of the mesohigh frequency changing power device of the two-way inversion of five level described in the utility model, form by 3 inductance, 48 IGBT devices or IGCT device, 36 diodes, 4 filter capacitors.Be in parallel after mainly connecting successively in the said main circuit and form by six brachium pontis and four electric capacity.There are eight IGBT or IGCT device to connect successively and form a brachium pontis, eight IGBT or IGCT device are connected successively and are formed a brachium pontis, eight IGBT or IGCT device are connected successively and are formed a brachium pontis, eight IGBT or IGCT device are connected successively and are formed a brachium pontis, eight IGBT or IGCT device are connected successively and are formed a brachium pontis, and eight IGBT or IGCT device are connected successively and formed a brachium pontis.On one termination IGBT of inductance or the tie point of IGCT device T24 and T25, the other end stays the input into power supply, on one termination IGBT of inductance or the tie point of IGCT device T14 and T15, the other end stays the input into power supply, on one termination IGBT of inductance or the tie point of IGCT device T34 and T35, the other end stays the input into power supply; The polar orientation unanimity of diode.The negative electrode of diode D1 links to each other with the tie point of IGBT or IGCT device T21 and T22; The negative electrode of diode D2 links to each other with the tie point of IGBT or IGCT device T31 and T32; The negative electrode of diode D3 links to each other with the tie point of IGBT or IGCT device T11 and T12; The anode of diode D1, D2, D3 all links to each other with the tie point of capacitor C 1 and C2.The negative electrode of diode D4 links to each other with the tie point of IGBT or IGCT device T23 and T22; The negative electrode of diode D5 links to each other with the tie point of IGBT or IGCT device T33 and T32; The negative electrode of diode D6 links to each other with the tie point of IGBT or IGCT device T13 and T12; The anode of diode D4, D5, D6 all links to each other with the tie point of capacitor C 3 and C2.The negative electrode of diode D7 links to each other with the tie point of IGBT or IGCT device T23 and T24; The negative electrode of diode D8 links to each other with the tie point of IGBT or IGCT device T33 and T34; The negative electrode of diode D9 links to each other with the tie point of IGBT or IGCT device T13 and T14; The anode of diode D7, D8, D9 all links to each other with the tie point of capacitor C 3 and C4.The polar orientation unanimity of diode D10, D11, D12, D13, D14, D15, D16, D17, D18.The anode of diode D10 links to each other with the tie point of IGBT or IGCT device T25 and T26; The anode of diode D11 links to each other with the tie point of IGBT or IGCT device T35 and T36; The anode of diode D12 links to each other with the tie point of IGBT or IGCT device T15 and T16; The negative electrode of diode D10, D11, D12 all links to each other with the tie point of capacitor C 1 and C2.The anode of diode D13 links to each other with the tie point of IGBT or IGCT device T27 and T26; The anode of diode D14 links to each other with the tie point of IGBT or IGCT device T37 and T36; The anode of diode D15 links to each other with the tie point of IGBT or IGCT device T17 and T16; The negative electrode of diode D13, D14, D15 all links to each other with the tie point of capacitor C 3 and C2.The anode of diode D16 links to each other with the tie point of IGBT or IGCT device T27 and T28; The anode of diode D17 links to each other with the tie point of IGBT or IGCT device T37 and T38; The anode of diode D18 links to each other with the tie point of IGBT or IGCT device T17 and T18; The negative electrode of diode D16, D17, D18 all links to each other with the tie point of capacitor C 3 and C4.The polar orientation unanimity of diode D19, D20, D21, D22, D23, D24, D25, D26, D27.The negative electrode of diode D19 links to each other with the tie point of IGBT or IGCT device T51 and T52; The negative electrode of diode D20 links to each other with the tie point of IGBT or IGCT device T41 and T42; The negative electrode of diode D21 links to each other with the tie point of IGBT or IGCT device T61 and T62; The anode of diode D19, D20, D21 all links to each other with the tie point of capacitor C 1 and C2.The negative electrode of diode D22 links to each other with the tie point of IGBT or IGCT device T53 and T52; The negative electrode of diode D23 links to each other with the tie point of IGBT or IGCT device T43 and T42; The negative electrode of diode D24 links to each other with the tie point of IGBT or IGCT device T63 and T62; The anode of diode D22, D23, D24 all links to each other with the tie point of capacitor C 3 and C2.The negative electrode of diode D25 links to each other with the tie point of IGBT or IGCT device T53 and T54; The negative electrode of diode D26 links to each other with the tie point of IGBT or IGCT device T43 and T44; The negative electrode of diode D27 links to each other with the tie point of IGBT or IGCT device T63 and T64; The anode of diode D25, D26, D27 all links to each other with the tie point of capacitor C 3 and C4.The polar orientation unanimity of diode D28, D29, D30, D31, D32, D33, D34, D35, D36.The anode of diode D28 links to each other with the tie point of IGBT or IGCT device T55 and T56; The anode of diode D29 links to each other with the tie point of IGBT or IGCT device T45 and T46; The anode of diode D30 links to each other with the tie point of IGBT or IGCT device T65 and T66; The negative electrode of diode D28, D29, D30 all links to each other with the tie point of capacitor C 1 and C2.The anode of diode D31 links to each other with the tie point of IGBT or IGCT device T57 and T56; The anode of diode D32 links to each other with the tie point of IGBT or IGCT device T47 and T46; The anode of diode D33 links to each other with the tie point of IGBT or IGCT device T67 and T66; The negative electrode of diode D31, D32, D33 all links to each other with the tie point of capacitor C 3 and C2.The anode of diode D34 links to each other with the tie point of IGBT or IGCT device T57 and T58; The anode of diode D35 links to each other with the tie point of IGBT or IGCT device T47 and T48; The anode of diode D36 links to each other with the tie point of IGBT or IGCT device T67 and T68; The negative electrode of diode D34, D35, D36 all links to each other with the tie point of capacitor C 3 and C4.The tie point of IGBT or IGCT device T44 and T45 is an output mutually wherein in this device, and the tie point of IGBT or IGCT device T54 and T55 is an output mutually wherein, and the tie point of IGBT or IGCT device T64 and T65 is an output mutually wherein.The mesohigh frequency changing power device of the two-way inversion of five level described in the utility model, by 3 inductance, 48 IGBT or IGCT device, 4 electric capacity, 36 diodes realize that the two-way flow of energy also applies in the mesohigh frequency changing power device.
The ability to transform of the mesohigh frequency changing power device of the two-way inversion of five level described in the utility model is strong, if export two phase times, as long as remove the brachium pontis of forming by T61, T62, T63, T64, T65, T66, T67, T68 in the said circuit and diode D21, D24, D27, D30, D33, D36.When if input voltage is high, capacitor C 1, C2, C3, C4's is withstand voltage not enough, only needs many with replacing capacitor C 1, C2, C3, C4 to meet the demands respectively as an electric capacity after several capacitances in series.The mesohigh frequency changing power device of the two-way inversion of five level described in the utility model is compared with the mesohigh frequency changing power device of prior art, has reduced transformer, and cost is reduced, and equipment volume reduces; Under equal power, efficient improves; Can make energy two-way flow between electrical network and load, can use motor as generator, make the nonelectrical energy of motor side be converted into electric energy and feed back to electrical network by motor in some occasion; Circuit of the present utility model can apply to the power back-off aspect by the change of control.
Description of drawings: accompanying drawing is the main circuit diagram of the mesohigh frequency changing power device of the two-way inversion of five level described in the utility model.
Embodiment: referring now to accompanying drawing, be described in detail as follows in conjunction with the embodiments: the mesohigh frequency changing power device of the two-way inversion of five level described in the utility model includes inductance, electronic switching device and filter capacitor and forms.In the main circuit of the mesohigh frequency changing power device of the two-way inversion of five level described in the utility model, by 3 inductance (L1, L2, L3), 48 IGBT devices or IGCT device (T11, T12, T13 ..., T66, T67, T68), 36 diodes (D1, D2, D3 ..., D34, T35, T36), 4 filter capacitors (C1, C2, C3, C4) form.Be in parallel after mainly connecting successively in the said main circuit and form by six brachium pontis and four capacitor C 1, C2, C3, C4.Eight IGBT or IGCT device T11 are arranged, T12, T13, T14, T15, T16, T17, T18 connects successively and forms a brachium pontis, eight IGBT or IGCT device T21, T22, T23, T24, T25, T26, T27, T28 connects successively and forms a brachium pontis, eight IGBT or IGCT device T31, T32, T33, T34, T35, T36, T37, T38 connects successively and forms a brachium pontis, eight IGBT or IGCT device T41, T42, T43, T44, T45, T46, T47, T48 connects successively and forms a brachium pontis, eight IGBT or IGCT device T51, T52, T53, T54, T55, T56, T57, T58 connects successively and forms a brachium pontis, eight IGBT or IGCT device T61, T62, T63, T64, T65, T66, T67, T68 connects successively and forms a brachium pontis.On one termination IGBT of inductance L 1 or the tie point of IGCT device T24 and T25, the other end stays the input into power supply, on one termination IGBT of inductance L 2 or the tie point of IGCT device T14 and T15, the other end stays the input into power supply, on one termination IGBT of inductance L 3 or the tie point of IGCT device T34 and T35, the other end stays the input into power supply; The polar orientation unanimity of diode D1, D2, D3, D4, D5, D6, D7, D8, D9.The negative electrode of diode D1 links to each other with the tie point of IGBT or IGCT device T21 and T22; The negative electrode of diode D2 links to each other with the tie point of IGBT or IGCT device T31 and T32; The negative electrode of diode D3 links to each other with the tie point of IGBT or IGCT device T11 and T12; The anode of diode D1, D2, D3 all links to each other with the tie point of capacitor C 1 and C2.The negative electrode of diode D4 links to each other with the tie point of IGBT or IGCT device T23 and T22; The negative electrode of diode D5 links to each other with the tie point of IGBT or IGCT device T33 and T32; The negative electrode of diode D6 links to each other with the tie point of IGBT or IGCT device T13 and T12; The anode of diode D4, D5, D6 all links to each other with the tie point of capacitor C 3 and C2.The negative electrode of diode D7 links to each other with the tie point of IGBT or IGCT device T23 and T24; The negative electrode of diode D8 links to each other with the tie point of IGBT or IGCT device T33 and T34; The negative electrode of diode D9 links to each other with the tie point of IGBT or IGCT device T13 and T14; The anode of diode D7, D8, D9 all links to each other with the tie point of capacitor C 3 and C4.The polar orientation unanimity of diode D10, D11, D12, D13, D14, D15, D16, D17, D18.The anode of diode D10 links to each other with the tie point of IGBT or IGCT device T25 and T26; The anode of diode D11 links to each other with the tie point of IGBT or IGCT device T35 and T36; The anode of diode D12 links to each other with the tie point of IGBT or IGCT device T15 and T16; The negative electrode of diode D10, D11, D12 all links to each other with the tie point of capacitor C 1 and C2.The anode of diode D13 links to each other with the tie point of IGBT or IGCT device T27 and T26; The anode of diode D14 links to each other with the tie point of IGBT or IGCT device T37 and T36; The anode of diode D15 links to each other with the tie point of IGBT or IGCT device T17 and T16; The negative electrode of diode D13, D14, D15 all links to each other with the tie point of capacitor C 3 and C2.The anode of diode D16 links to each other with the tie point of IGBT or IGCT device T27 and T28; The anode of diode D17 links to each other with the tie point of IGBT or IGCT device T37 and T38; The anode of diode D18 links to each other with the tie point of IGBT or IGCT device T17 and T18; The negative electrode of diode D16, D17, D18 all links to each other with the tie point of capacitor C 3 and C4.The polar orientation unanimity of diode D19, D20, D21, D22, D23, D24, D25, D26, D27.The negative electrode of diode D19 links to each other with the tie point of IGBT or IGCT device T51 and T52; The negative electrode of diode D20 links to each other with the tie point of IGBT or IGCT device T41 and T42; The negative electrode of diode D21 links to each other with the tie point of IGBT or IGCT device T61 and T62; The anode of diode D19, D20, D21 all links to each other with the tie point of capacitor C 1 and C2.The negative electrode of diode D22 links to each other with the tie point of IGBT or IGCT device T53 and T52; The negative electrode of diode D23 links to each other with the tie point of IGBT or IGCT device T43 and T42; The negative electrode of diode D24 links to each other with the tie point of IGBT or IGCT device T63 and T62; The anode of diode D22, D23, D24 all links to each other with the tie point of capacitor C 3 and C2.The negative electrode of diode D25 links to each other with the tie point of IGBT or IGCT device T53 and T54; The negative electrode of diode D26 links to each other with the tie point of IGBT or IGCT device T43 and T44; The negative electrode of diode D27 links to each other with the tie point of IGBT or IGCT device T63 and T64; The anode of diode D25, D26, D27 all links to each other with the tie point of capacitor C 3 and C4.The polar orientation unanimity of diode D28, D29, D30, D31, D32, D33, D34, D35, D36.The anode of diode D28 links to each other with the tie point of IGBT or IGCT device T55 and T56; The anode of diode D29 links to each other with the tie point of IGBT or IGCT device T45 and T46; The anode of diode D30 links to each other with the tie point of IGBT or IGCT device T65 and T66; The negative electrode of diode D28, D29, D30 all links to each other with the tie point of capacitor C 1 and C2.The anode of diode D31 links to each other with the tie point of IGBT or IGCT device T57 and T56; The anode of diode D32 links to each other with the tie point of IGBT or IGCT device T47 and T46; The anode of diode D33 links to each other with the tie point of IGBT or IGCT device T67 and T66; The negative electrode of diode D31, D32, D33 all links to each other with the tie point of capacitor C 3 and C2.The anode of diode D34 links to each other with the tie point of IGBT or IGCT device T57 and T58; The anode of diode D35 links to each other with the tie point of IGBT or IGCT device T47 and T48; The anode of diode D36 links to each other with the tie point of IGBT or IGCT device T67 and T68; The negative electrode of diode D34, D35, D36 all links to each other with the tie point of capacitor C 3 and C4.The tie point of IGBT or IGCT device T44 and T45 is an output mutually wherein in this device, and the tie point of IGBT or IGCT device T54 and T55 is an output mutually wherein, and the tie point of IGBT or IGCT device T64 and T65 is an output mutually wherein.The mesohigh frequency changing power device of the two-way inversion of five level described in the utility model, by 3 inductance, 48 IGBT or IGCT device, 4 electric capacity, 36 diodes realize that the two-way flow of energy also applies in the mesohigh frequency changing power device.The ability to transform of the mesohigh frequency changing power device of the two-way inversion of five level described in the utility model is strong, if export two phase times, as long as remove the brachium pontis of forming by T61, T62, T63, T64, T65, T66, T67, T68 in the said circuit and diode D21, D24, D27, D30, D33, D36.When if input voltage is high, capacitor C 1, C2, C3, C4's is withstand voltage not enough, only needs many with replacing capacitor C 1, C2, C3, C4 to meet the demands respectively as an electric capacity after several capacitances in series.The mesohigh frequency changing power device of the two-way inversion of five level described in the utility model is compared with the mesohigh frequency changing power device of prior art, has reduced transformer, and cost is reduced, and equipment volume reduces; Under equal power, efficient improves; Can make energy two-way flow between electrical network and load, can use motor as generator, make the nonelectrical energy of motor side be converted into electric energy and feed back to electrical network by motor in some occasion; Circuit of the present utility model can apply to the power back-off aspect by the change of control.
Claims (7)
1, the mesohigh frequency changing power device of the two-way inversion of five level, including inductance, electronic switching device and filter capacitor forms, it is characterized in that in the main circuit of the mesohigh frequency changing power device of the two-way inversion of described five level, by 3 inductance (L1, L2, L3), 48 IGBT devices or IGCT device (T11, T12, T13 ..., T66, T67, T68), 36 diodes (D1, D2, D3 ..., D34, T35, T36), 4 filter capacitors (C1, C2, C3, C4) form; Be in parallel after mainly connecting successively in the said main circuit and form by six brachium pontis and four capacitor C 1, C2, C3, C4; Eight IGBT or IGCT device T11 are arranged, T12, T13, T14, T15, T16, T17, T18 connects successively and forms a brachium pontis, eight IGBT or IGCT device T21, T22, T23, T24, T25, T26, T27, T28 connects successively and forms a brachium pontis, eight IGBT or IGCT device T31, T32, T33, T34, T35, T36, T37, T38 connects successively and forms a brachium pontis, eight IGBT or IGCT device T41, T42, T43, T44, T45, T46, T47, T48 connects successively and forms a brachium pontis, eight IGBT or IGCT device T51, T52, T53, T54, T55, T56, T57, T58 connects successively and forms a brachium pontis, eight IGBT or IGCT device T61, T62, T63, T64, T65, T66, T67, T68 connects successively and forms a brachium pontis.
2, the mesohigh frequency changing power device of the two-way inversion of five level according to claim 1, it is characterized in that on the tie point of a termination IGBT of inductance L 1 or IGCT device T24 and T25, the other end stays the input into power supply, on one termination IGBT of inductance L 2 or the tie point of IGCT device T14 and T15, the other end stays the input into power supply, on one termination IGBT of inductance L 3 or the tie point of IGCT device T34 and T35, the other end stays the input into power supply; The polar orientation unanimity of diode D1, D2, D3, D4, D5, D6, D7, D8, D9.
3,, it is characterized in that the negative electrode of diode D1 links to each other with the tie point of IGBT or IGCT device T21 and T22 according to the mesohigh frequency changing power device of the two-way inversion of described five level of claim; The negative electrode of diode D2 links to each other with the tie point of IGBT or IGCT device T31 and T32; The negative electrode of diode D3 links to each other with the tie point of IGBT or IGCT device T11 and T12; The anode of diode D1, D2, D3 all links to each other with the tie point of capacitor C 1 and C2; The negative electrode of diode D4 links to each other with the tie point of IGBT or IGCT device T23 and T22; The negative electrode of diode D5 links to each other with the tie point of IGBT or IGCT device T33 and T32; The negative electrode of diode D6 links to each other with the tie point of IGBT or IGCT device T13 and T12; The anode of diode D4, D5, D6 all links to each other with the tie point of capacitor C 3 and C2; The negative electrode of diode D7 links to each other with the tie point of IGBT or IGCT device T23 and T24; The negative electrode of diode D8 links to each other with the tie point of IGBT or IGCT device T33 and T34; The negative electrode of diode D9 links to each other with the tie point of IGBT or IGCT device T13 and T14; The anode of diode D7, D8, D9 all links to each other with the tie point of capacitor C 3 and C4.
4, the mesohigh frequency changing power device of the two-way inversion of five level according to claim 1 is characterized in that the polar orientation unanimity of diode D10, D11, D12, D13, D14, D15, D16, D17, D18; The anode of diode D10 links to each other with the tie point of IGBT or IGCT device T25 and T26; The anode of diode D11 links to each other with the tie point of IGBT or IGCT device T35 and T36; The anode of diode D12 links to each other with the tie point of IGBT or IGCT device T15 and T16; The negative electrode of diode D10, D11, D12 all links to each other with the tie point of capacitor C 1 and C2; The anode of diode D13 links to each other with the tie point of IGBT or IGCT device T27 and T26; The anode of diode D14 links to each other with the tie point of IGBT or IGCT device T37 and T36; The anode of diode D15 links to each other with the tie point of IGBT or IGCT device T17 and T16; The negative electrode of diode D13, D14, D15 all links to each other with the tie point of capacitor C 3 and C2.
5, the mesohigh frequency changing power device of the two-way inversion of five level according to claim 1 is characterized in that the anode of diode D16 links to each other with the tie point of IGBT or IGCT device T27 and T28; The anode of diode D17 links to each other with the tie point of IGBT or IGCT device T37 and T38; The anode of diode D18 links to each other with the tie point of IGBT or IGCT device T17 and T18; The negative electrode of diode D16, D17, D18 all links to each other with the tie point of capacitor C 3 and C4; The polar orientation unanimity of diode D19, D20, D21, D22, D23, D24, D25, D26, D27; The negative electrode of diode D19 links to each other with the tie point of IGBT or IGCT device T51 and T52; The negative electrode of diode D20 links to each other with the tie point of IGBT or IGCT device T41 and T42; The negative electrode of diode D21 links to each other with the tie point of IGBT or IGCT device T61 and T62; The anode of diode D19, D20, D21 all links to each other with the tie point of capacitor C 1 and C2.
6, the mesohigh frequency changing power device of the two-way inversion of five level according to claim 1 is characterized in that the negative electrode of diode D22 links to each other with the tie point of IGBT or IGCT device T53 and T52; The negative electrode of diode D23 links to each other with the tie point of IGBT or IGCT device T43 and T42; The negative electrode of diode D24 links to each other with the tie point of IGBT or IGCT device T63 and T62; The anode of diode D22, D23, D24 all links to each other with the tie point of capacitor C 3 and C2; The negative electrode of diode D25 links to each other with the tie point of IGBT or IGCT device T53 and T54; The negative electrode of diode D26 links to each other with the tie point of IGBT or IGCT device T43 and T44; The negative electrode of diode D27 links to each other with the tie point of IGBT or IGCT device T63 and T64; The anode of diode D25, D26, D27 all links to each other with the tie point of capacitor C 3 and C4; The polar orientation unanimity of diode D28, D29, D30, D31, D32, D33, D34, D35, D36; The anode of diode D28 links to each other with the tie point of IGBT or IGCT device T55 and T56; The anode of diode D29 links to each other with the tie point of IGBT or IGCT device T45 and T46; The anode of diode D30 links to each other with the tie point of IGBT or IGCT device T65 and T66; The negative electrode of diode D28, D29, D30 all links to each other with the tie point of capacitor C 1 and C2.
7, the mesohigh frequency changing power device of the two-way inversion of five level according to claim 1 is characterized in that the anode of diode D31 links to each other with the tie point of IGBT or IGCT device T57 and T56; The anode of diode D32 links to each other with the tie point of IGBT or IGCT device T47 and T46; The anode of diode D33 links to each other with the tie point of IGBT or IGCT device T67 and T66; The negative electrode of diode D31, D32, D33 all links to each other with the tie point of capacitor C 3 and C2; The anode of diode D34 links to each other with the tie point of IGBT or IGCT device T57 and T58; The anode of diode D35 links to each other with the tie point of IGBT or IGCT device T47 and T48; The anode of diode D36 links to each other with the tie point of IGBT or IGCT device T67 and T68; The negative electrode of diode D34, D35, D36 all links to each other with the tie point of capacitor C 3 and C4.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200320107353 CN2666031Y (en) | 2003-11-26 | 2003-11-26 | Five-levels bidirectional inverted middle and high voltage frequency conversion power supply device |
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| CN 200320107353 CN2666031Y (en) | 2003-11-26 | 2003-11-26 | Five-levels bidirectional inverted middle and high voltage frequency conversion power supply device |
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| CN2666031Y true CN2666031Y (en) | 2004-12-22 |
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| CN 200320107353 Expired - Fee Related CN2666031Y (en) | 2003-11-26 | 2003-11-26 | Five-levels bidirectional inverted middle and high voltage frequency conversion power supply device |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100452641C (en) * | 2007-01-12 | 2009-01-14 | 清华大学 | Clamping five level variable frequency driving device utilizing internal and external ring double-group rectifier bridge |
| CN100466448C (en) * | 2006-04-17 | 2009-03-04 | 山东新风光电子科技发展有限公司 | Five-level converter structure device |
| CN101826838A (en) * | 2010-05-11 | 2010-09-08 | 北京乐普四方方圆科技股份有限公司 | High-energy-efficiency multilevel high-voltage variable frequency speed control device with directly series-connected insulated gate bipolar transistors (IGBT) |
| CN101895204A (en) * | 2010-06-03 | 2010-11-24 | 山东新风光电子科技发展有限公司 | High voltage converter circuit structure |
| CN102170237A (en) * | 2011-04-25 | 2011-08-31 | 湖南银河电气有限公司 | High-voltage variable frequency power source |
| CN101345423B (en) * | 2008-05-07 | 2011-11-16 | 中国科学院电工研究所 | 5-power level H-bridge cascade connection back-to-back current transformer used for wind power generation system |
| CN105375803A (en) * | 2015-12-09 | 2016-03-02 | 吉林大学 | Electric source five-level transmission circuit employing transient electromagnetic method |
| US9479076B2 (en) | 2013-02-14 | 2016-10-25 | Abb Schweiz Ag | Converter cell with reduced power losses, high voltage multilevel converter and associated method |
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2003
- 2003-11-26 CN CN 200320107353 patent/CN2666031Y/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100466448C (en) * | 2006-04-17 | 2009-03-04 | 山东新风光电子科技发展有限公司 | Five-level converter structure device |
| CN100452641C (en) * | 2007-01-12 | 2009-01-14 | 清华大学 | Clamping five level variable frequency driving device utilizing internal and external ring double-group rectifier bridge |
| CN101345423B (en) * | 2008-05-07 | 2011-11-16 | 中国科学院电工研究所 | 5-power level H-bridge cascade connection back-to-back current transformer used for wind power generation system |
| CN101826838A (en) * | 2010-05-11 | 2010-09-08 | 北京乐普四方方圆科技股份有限公司 | High-energy-efficiency multilevel high-voltage variable frequency speed control device with directly series-connected insulated gate bipolar transistors (IGBT) |
| CN101826838B (en) * | 2010-05-11 | 2012-07-04 | 北京乐普四方方圆科技股份有限公司 | High-energy-efficiency multilevel high-voltage variable frequency speed control device with directly series-connected insulated gate bipolar transistors (IGBT) |
| CN101895204A (en) * | 2010-06-03 | 2010-11-24 | 山东新风光电子科技发展有限公司 | High voltage converter circuit structure |
| CN101895204B (en) * | 2010-06-03 | 2012-05-23 | 山东新风光电子科技发展有限公司 | High voltage converter circuit structure |
| CN102170237A (en) * | 2011-04-25 | 2011-08-31 | 湖南银河电气有限公司 | High-voltage variable frequency power source |
| CN102170237B (en) * | 2011-04-25 | 2013-07-10 | 湖南银河电气有限公司 | High-voltage variable frequency power source |
| US9479076B2 (en) | 2013-02-14 | 2016-10-25 | Abb Schweiz Ag | Converter cell with reduced power losses, high voltage multilevel converter and associated method |
| CN105375803A (en) * | 2015-12-09 | 2016-03-02 | 吉林大学 | Electric source five-level transmission circuit employing transient electromagnetic method |
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