CN2665934Y - 电镀基板具反射镜面的高亮度发光二极管 - Google Patents
电镀基板具反射镜面的高亮度发光二极管 Download PDFInfo
- Publication number
- CN2665934Y CN2665934Y CNU032490399U CN03249039U CN2665934Y CN 2665934 Y CN2665934 Y CN 2665934Y CN U032490399 U CNU032490399 U CN U032490399U CN 03249039 U CN03249039 U CN 03249039U CN 2665934 Y CN2665934 Y CN 2665934Y
- Authority
- CN
- China
- Prior art keywords
- layer
- substrate
- led
- high brightness
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 78
- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 239000002184 metal Substances 0.000 claims abstract description 41
- 238000009713 electroplating Methods 0.000 claims abstract description 29
- 239000010410 layer Substances 0.000 claims description 100
- 239000011247 coating layer Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 19
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 18
- 229910052737 gold Inorganic materials 0.000 claims description 16
- 239000004575 stone Substances 0.000 claims description 16
- 229910052725 zinc Inorganic materials 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 3
- 238000005036 potential barrier Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000007747 plating Methods 0.000 abstract description 6
- 238000002310 reflectometry Methods 0.000 abstract description 3
- 230000017525 heat dissipation Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Images
Landscapes
- Led Devices (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNU032490399U CN2665934Y (zh) | 2003-09-25 | 2003-09-25 | 电镀基板具反射镜面的高亮度发光二极管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNU032490399U CN2665934Y (zh) | 2003-09-25 | 2003-09-25 | 电镀基板具反射镜面的高亮度发光二极管 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN2665934Y true CN2665934Y (zh) | 2004-12-22 |
Family
ID=34327472
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNU032490399U Expired - Lifetime CN2665934Y (zh) | 2003-09-25 | 2003-09-25 | 电镀基板具反射镜面的高亮度发光二极管 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN2665934Y (zh) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101345275B (zh) * | 2007-07-10 | 2010-06-09 | 晶元光电股份有限公司 | 发光元件 |
US7811838B2 (en) | 2006-12-29 | 2010-10-12 | Epistar Corporation | High efficiency light-emitting diode and method for manufacturing the same |
US7989840B2 (en) | 2006-08-29 | 2011-08-02 | Toshiba Lighting & Technology Corporation | Illumination apparatus having a plurality of semiconductor light-emitting devices |
CN101226973B (zh) * | 2007-01-17 | 2011-10-12 | 晶元光电股份有限公司 | 高效率发光二极管及其制造方法 |
CN101656279B (zh) * | 2008-08-22 | 2011-12-07 | 晶元光电股份有限公司 | 一种包含复合电镀基板的发光元件 |
CN102270715A (zh) * | 2007-01-17 | 2011-12-07 | 晶元光电股份有限公司 | 发光二极管 |
US8098003B2 (en) | 2009-06-01 | 2012-01-17 | Toshiba Lighting & Technology Corporation | Light emitting module and illumination device |
US8167456B2 (en) | 2006-11-30 | 2012-05-01 | Toshiba Lighting & Technology Corporation | Illumination device with semiconductor light-emitting elements |
CN102017156B (zh) * | 2008-02-25 | 2013-03-13 | 光波光电技术公司 | 电流注入/隧穿发光器件和方法 |
CN102082216B (zh) * | 2009-11-26 | 2013-04-24 | 上海蓝光科技有限公司 | 一种发光二极管芯片及其制造方法 |
-
2003
- 2003-09-25 CN CNU032490399U patent/CN2665934Y/zh not_active Expired - Lifetime
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7989840B2 (en) | 2006-08-29 | 2011-08-02 | Toshiba Lighting & Technology Corporation | Illumination apparatus having a plurality of semiconductor light-emitting devices |
US8558272B2 (en) | 2006-08-29 | 2013-10-15 | Toshiba Lighting & Technology Corporation | Illumination apparatus having a plurality of semiconductor light-emitting devices |
US8167456B2 (en) | 2006-11-30 | 2012-05-01 | Toshiba Lighting & Technology Corporation | Illumination device with semiconductor light-emitting elements |
US7811838B2 (en) | 2006-12-29 | 2010-10-12 | Epistar Corporation | High efficiency light-emitting diode and method for manufacturing the same |
US8546156B2 (en) | 2006-12-29 | 2013-10-01 | Epistar Corporation | High efficiency light-emitting diode and method for manufacturing the same |
CN101226973B (zh) * | 2007-01-17 | 2011-10-12 | 晶元光电股份有限公司 | 高效率发光二极管及其制造方法 |
CN102270715A (zh) * | 2007-01-17 | 2011-12-07 | 晶元光电股份有限公司 | 发光二极管 |
CN101345275B (zh) * | 2007-07-10 | 2010-06-09 | 晶元光电股份有限公司 | 发光元件 |
CN102017156B (zh) * | 2008-02-25 | 2013-03-13 | 光波光电技术公司 | 电流注入/隧穿发光器件和方法 |
CN101656279B (zh) * | 2008-08-22 | 2011-12-07 | 晶元光电股份有限公司 | 一种包含复合电镀基板的发光元件 |
US8098003B2 (en) | 2009-06-01 | 2012-01-17 | Toshiba Lighting & Technology Corporation | Light emitting module and illumination device |
CN102082216B (zh) * | 2009-11-26 | 2013-04-24 | 上海蓝光科技有限公司 | 一种发光二极管芯片及其制造方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI597872B (zh) | 發光二極體元件 | |
TWI324400B (en) | High-brightness light emitting diode having reflective layer | |
CN1897318A (zh) | 具有反射层的高亮度发光二极管制造方法 | |
CN2665934Y (zh) | 电镀基板具反射镜面的高亮度发光二极管 | |
CN101814487B (zh) | 一种多芯片led光源模组及其制作方法 | |
TWM255518U (en) | Vertical electrode structure of Gallium Nitride based LED | |
CN1794476A (zh) | 含有金属铬基板的铟镓铝氮半导体发光元件及其制造方法 | |
TW569474B (en) | Superluminent light emitting diode with plated substrate having reflecting mirror and the manufacturing method thereof | |
CN1881624A (zh) | 一种发光二极管及其制备方法 | |
CN104752575A (zh) | 一种发光二极管及其制造方法 | |
CN102214751B (zh) | 一种垂直结构的发光器件及其制造方法 | |
CN101345276A (zh) | 发光二极管装置及其制造方法 | |
CN2665935Y (zh) | 高亮度发光二极管 | |
CN1734798A (zh) | 具透明导电层的全方位反射器发光二极管 | |
CN102201508B (zh) | 发光二极管芯片及其制作方法 | |
CN105280665A (zh) | 光电元件及其制造方法 | |
CN102157649A (zh) | 垂直结构氮化镓发光二极管芯片及其制备方法 | |
CN104425537A (zh) | 发光二极管元件 | |
CN1779996A (zh) | 在金属热沉上的激光剥离功率型led芯片及其制备方法 | |
CN2662496Y (zh) | 垂直共振腔面射型雷射二极管 | |
CN2788358Y (zh) | 氮化镓系发光二极管 | |
CN102916102A (zh) | 光电元件 | |
CN105914281A (zh) | 具有高效率反射结构的发光元件 | |
CN112420891A (zh) | 发光二极管芯片及其制作方法 | |
CN2738399Y (zh) | 具有高光萃取效率的氮化镓系发光二极管的结构 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: NATIONAL CHUNG HSING UNIVERSITY Free format text: FORMER OWNER: HONG RUIHUA Effective date: 20080509 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20080509 Address after: Taiwan Guoguang China Taichung City Road 250, zip: Patentee after: National Chung Hsing University Address before: Do not announce the address of the patentee Patentee before: Hong Ruihua |
|
C17 | Cessation of patent right | ||
CX01 | Expiry of patent term |
Expiration termination date: 20130925 Granted publication date: 20041222 |