CN2641647Y - Monitoring experiment instrument for in situ dynamic property of film growth process - Google Patents
Monitoring experiment instrument for in situ dynamic property of film growth process Download PDFInfo
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- CN2641647Y CN2641647Y CN 03200903 CN03200903U CN2641647Y CN 2641647 Y CN2641647 Y CN 2641647Y CN 03200903 CN03200903 CN 03200903 CN 03200903 U CN03200903 U CN 03200903U CN 2641647 Y CN2641647 Y CN 2641647Y
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Abstract
The utility model provides a film growth process original position dynamic characteristic detecting experiment device which is composed of a vacuum controlling part, a direct current sputter coating part and a measurement part. The vacuum controlling part is composed of a mechanical pump, a vacuum measuring gauge and a vacuum degree displaying instrument; the direct current sputter coating part is composed of a target material for coating, a substrate frame for placing the substrate and a direct current sputter power supply. The target material for coating and the substrate frame for placing the substrate are arranged in the direct current sputter coating room; the measurement part is composed of a current input connector for connecting with the current input electrode of a substrate, a voltage output connector for connecting with the voltage output electrode of the substrate, a constant current source, a current meter and a voltage meter. A current input electrode and a voltage output electrode are arranged on the substrate in advance, the relative position of the two electrodes is that the current input electrode is arranged on the outer side, and the voltage output electrode is arranged on the inner side. The utility model has the advantages of clearly reflecting the dynamic characteristic of the film growth process, inexpensive price and simple operation.
Description
Technical field
The invention belongs to thin film growth process original position dynamic perfromance monitoring technical field, a kind of thin film growth process original position dynamic perfromance monitoring experiment device particularly is provided.It is made up of vacuum control part, dc sputtering deposition part and measure portion.By in process of plating,, the mechanism that film forms is described to the dynamic monitoring of sheet resistance or output voltage.
Background technology
Current, be accompanied by the develop rapidly of new material, new technology and the surprising progress of SIC (semiconductor integrated circuit) technology, electronics and information industry gets prosperous with every passing day.The development trend that volume is little, in light weight, ultrathin, high-performance has become the New Times electronic equipment.The appearance of thin-film device and technological breakthrough then play an important role for the development that promotes microelectric technique.
Enter 21 century, each university of the whole nation has all carried out the serial reform in education in order to cultivate the talent with innovation ability who satisfies society need, and the associated content of courses and teaching material have also been made corresponding variation, to adapt to the development of times needs.Reflection new material and The application of new technique, elementary teaching combine with the cutting edge technology development becomes the direction of college teaching reform.The laboratory teaching is the key that realizes that quality of science, creativity and practical experience to the student are cultivated.Make full use of the teaching of laboratory, allow the student on the basis of grasping ultimate principle, have an opportunity to touch the application of new and high technology and use up-to-date process equipment, and then shorten the student from skills and experience and step into the required laundering period of society.
Summary of the invention
The objective of the invention is to: the thin film growth process original position dynamic perfromance monitoring experiment device that provides a kind of and reduce the experimental education cost, shorten time of experiment teaching content, make things convenient for the student to operate.
The present invention is made up of vacuum control part 1, dc sputtering deposition part 2,2 ' and measure portion.
1, vacuum control part 1 is made up of mechanical pump, vacuum measurement rule and vacuum tightness Displaying Meter; The substrate holder 5 and the dc sputtering power 2 ' of the target 4 that dc sputtering deposition part 2 is used by plated film, placement substrate are formed; The electric current input adapter 11 and 11 ' that its measure portion is connected by the current input electrode that is used for substrate, be used for voltage out splice going splice 10 and 10 ', constant current source 16, reometer 18 and voltage table 15 that the voltage output electrode with substrate is connected and form.
2, will prepare in advance on the substrate 6 that uses in the experimental provision of the present invention current input electrode 7 and 7 ' will be arranged, voltage output electrode 8 and 8 ', the relative position of the two is: current input electrode is in the outside, and the voltage output electrode is in the inboard, i.e. four joint low-resistance measurement methods.Substrate 6 can be an insulating material, also can be conductor or semiconductor material, but should be at its surface preparation one deck insulator layer, and the thickness of insulator layer is in the 200-50000 nanometer.
3, use experimental provision of the present invention, can and monitor at low background vacuum pressure (about 2 Pascals) following realization plated film to thin film growth process original position dynamic perfromance.
4, the outdoor cover of dc sputtering deposition of the present invention is that transparent material is made, and as glass, can clearly observe change in color degree in aura that the direct-current ion sputter produced and the film formation process in coating process.
The invention has the advantages that: by the variation and the measurement of this physical characteristics of resistance in thin film growth process, the dynamic perfromance that can clearly reflect thin film growth process comprises these three main growth courses of formation of the formation of the discontinuous construction of film, cancellated formation and continuous film structure; Experimental provision of the present invention physical image on design philosophy is clear, theoretical analysis and experimental result corresponding relation are good, make the operator can clearly observe change in color degree in aura that the direct-current ion sputter produced and the film formation process in coating process, effect is directly perceived; And experimental provision of the present invention is cheap, simple to operate, shorten experimental period.Experimental provision of the present invention is suitable for the infrastest teaching.
Description of drawings
Fig. 1 is the composition synoptic diagram of thin film growth process original position dynamic perfromance monitoring experiment device for teaching of the present invention.Vacuum control part 1, dc sputtering deposition part 2,2 ', measure portion comprises: electric current input adapter 11,11 ', voltage out splice going splice 10,10 ', constant current source 16, reometer 17 and voltage table 15, the target 4 that plated film is used, the substrate holder 5 of placement substrate, substrate 6.
Fig. 2 is the synoptic diagram of the substrate 6 of experimental provision of the present invention.Current input electrode 7,7 ', voltage output electrode 8,8 '.
Fig. 3 flows through voltage that the electric current of gold thin film the produces variation relation with sedimentation time in the thin film growth process of the embodiment of the invention.
Embodiment
1. on substrate, prepare current input electrode and voltage output electrode
(1) substrate cleans
After long 50 millimeters, wide 25 millimeters, thick 1 millimeter simple glass substrate are carried out 2 minutes ultrasonic cleaning with acetone, carry out 2 minutes ultrasonic cleaning with deionized water again, carry out 2 minutes ultrasonic cleaning with absolute ethyl alcohol at last.Substrate after the cleaning dries up with tympanites.
(2) preparation current input electrode and voltage output electrode
Cover on the glass substrate of cleaning with the mask plate that is carved with electrode shape, with the preparation current input electrode and the voltage output electrode on glass substrate of apparatus of the present invention.Electrode is the gold thin film of about 300 nanometers of thickness, preparation condition: the dc sputtering deposition chamber is extracted into vacuum tightness less than 2 Pascals, feeds the argon gas that working gas is 4 Pascals then, substrate temperature is a room temperature, sputtering voltage is 1000 volts, 8 milliamperes of sputtering currents, sedimentation time 5 minutes.
2. gold thin film growth course original position dynamic perfromance monitoring
Glass substrate with current input electrode and voltage output electrode is placed on the substrate holder of apparatus of the present invention dc sputtering deposition chamber, and the electric current input adapter with measure portion is connected with the voltage out splice going splice respectively, and the dc sputtering deposition chamber is vacuumized.Open the continuous current source switch, making output current is 40 milliamperes, opens voltmeter switch.Then, beginning d.c. sputtering deposited gold film carries out the monitoring of original position dynamic perfromance to the growth course of gold thin film.The sputtering sedimentation condition of gold thin film is: the vacuum tightness that the dc sputtering deposition chamber is extracted into 1.5 Pascals, feed the argon gas that working gas is 2.5 Pascals then, substrate temperature is a room temperature, and sputtering voltage is 1000 volts, 4 milliamperes of sputtering currents, substrate is 5 centimetres to the distance of gold target.Fig. 3 has shown the variation relation of the voltage of the electric current generation of flowing through gold thin film in the whole deposition process of gold thin film with sedimentation time.Just as shown in Figure 3, when the deposition beginning, magnitude of voltage is very little, and film is to be made of a lot of very little nuclears, and promptly film is in the nucleus growth stage; Continue deposition, voltage increases with the increase of sedimentation time, and at this moment gold thin film is made of very great island, and promptly film is in the island growth phase, and this stage gold thin film still has discontinuous construction; Along with the continuation increase of sedimentation time, magnitude of voltage is rapidly increased to maximum, and begins to reduce with sedimentation time, and interior during this period of time gold thin film has formed reticulate texture; Subsequently, further dullness reduces voltage with the increase of sedimentation time, and at this moment gold thin film has had continuous structure.As mentioned above, in the gold thin film deposition process, cross the variation of voltage that the electric current of gold thin film produces by monitoring stream with sedimentation time, can monitor film from the discontinuous construction to the reticulate texture again to these three main growth courses of continuous structure, reached thin film growth process original position dynamic perfromance monitoring purpose.
Claims (2)
1, a kind of thin film growth process original position dynamic perfromance monitoring experiment device.It is characterized in that: form by vacuum control part (1), dc sputtering deposition part (2,2 ') and measure portion; Its vacuum control part (1) is made up of mechanical pump, vacuum measurement rule and vacuum tightness Displaying Meter; The target (4) that dc sputtering deposition part (2,2 ') is used by plated film, substrate holder (5) and the dc sputtering power of laying substrate (6) are formed, and target that plated film is used (4) and the substrate holder (5) of laying substrate are placed on the dc sputtering deposition chamber; The electric current input adapter (11,11 ') that measure portion is connected by the current input electrode that is used for substrate, be used for voltage out splice going splice (10,10 '), constant current source (16), reometer (17) and voltage table (15) that the voltage output electrode with substrate is connected and form; To prepare in advance on the substrate (6) has current input electrode and voltage output electrode, and the relative position of the two is: current input electrode is in the outside, and the voltage output electrode is in the inboard.
2, according to the described experimental provision of claim 1, it is characterized in that: the outdoor cover of dc sputtering deposition is that transparent material is made, substrate (6) can be an insulating material, also can be conductor or semiconductor material, but should be at its surface preparation one deck insulator layer, the thickness of insulator layer is in the 200-50000 nanometer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03200903 CN2641647Y (en) | 2003-01-14 | 2003-01-14 | Monitoring experiment instrument for in situ dynamic property of film growth process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03200903 CN2641647Y (en) | 2003-01-14 | 2003-01-14 | Monitoring experiment instrument for in situ dynamic property of film growth process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2641647Y true CN2641647Y (en) | 2004-09-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03200903 Expired - Lifetime CN2641647Y (en) | 2003-01-14 | 2003-01-14 | Monitoring experiment instrument for in situ dynamic property of film growth process |
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| Country | Link |
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| CN (1) | CN2641647Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102135510A (en) * | 2010-12-22 | 2011-07-27 | 广西民族大学 | Method for researching in-situ growth process of micro-nanometer barium molybdate octahedron |
| CN114672782A (en) * | 2022-04-14 | 2022-06-28 | 西安交通大学 | Integrated sample stage device for thin film deposition and continuous film growth monitoring and monitoring method |
-
2003
- 2003-01-14 CN CN 03200903 patent/CN2641647Y/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102135510A (en) * | 2010-12-22 | 2011-07-27 | 广西民族大学 | Method for researching in-situ growth process of micro-nanometer barium molybdate octahedron |
| CN114672782A (en) * | 2022-04-14 | 2022-06-28 | 西安交通大学 | Integrated sample stage device for thin film deposition and continuous film growth monitoring and monitoring method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CX01 | Expiry of patent term |
Expiration termination date: 20130114 Granted publication date: 20040915 |