CN2589968Y - Multifunctional photoelectric parameter measuring device - Google Patents
Multifunctional photoelectric parameter measuring device Download PDFInfo
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- CN2589968Y CN2589968Y CN 02294293 CN02294293U CN2589968Y CN 2589968 Y CN2589968 Y CN 2589968Y CN 02294293 CN02294293 CN 02294293 CN 02294293 U CN02294293 U CN 02294293U CN 2589968 Y CN2589968 Y CN 2589968Y
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- 238000009434 installation Methods 0.000 claims description 3
- 238000005259 measurement Methods 0.000 abstract description 18
- 230000003287 optical effect Effects 0.000 abstract description 11
- 238000001579 optical reflectometry Methods 0.000 abstract description 10
- 230000005540 biological transmission Effects 0.000 abstract description 6
- 238000012423 maintenance Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 15
- 238000001228 spectrum Methods 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 238000010606 normalization Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
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- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN 02294293 CN2589968Y (en) | 2002-12-26 | 2002-12-26 | Multifunctional photoelectric parameter measuring device |
Applications Claiming Priority (1)
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CN 02294293 CN2589968Y (en) | 2002-12-26 | 2002-12-26 | Multifunctional photoelectric parameter measuring device |
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CN2589968Y true CN2589968Y (en) | 2003-12-03 |
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CN 02294293 Expired - Lifetime CN2589968Y (en) | 2002-12-26 | 2002-12-26 | Multifunctional photoelectric parameter measuring device |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101871992A (en) * | 2010-06-28 | 2010-10-27 | 常州亿晶光电科技有限公司 | Alternating current measuring device for quantum efficiency of solar battery and using method thereof |
CN101881807A (en) * | 2010-06-28 | 2010-11-10 | 常州亿晶光电科技有限公司 | Alternating-current measuring device for quantum efficiency of solar cell |
CN101893680A (en) * | 2010-06-28 | 2010-11-24 | 常州亿晶光电科技有限公司 | Direct current measurement device for quantum efficiency of solar cell |
CN101893679A (en) * | 2010-06-28 | 2010-11-24 | 常州亿晶光电科技有限公司 | Direct-current measuring device for quantum efficiency of solar cell and using method thereof |
CN101398453B (en) * | 2007-09-26 | 2010-12-22 | 中国科学院半导体研究所 | Single light path quantum efficiency test system |
CN102097539A (en) * | 2011-01-20 | 2011-06-15 | 南昌航空大学 | Device and method for continuously modulating photoinduced voltage of semiconductor hetetrojunction |
CN104458598A (en) * | 2014-12-12 | 2015-03-25 | 张晓勇 | Novel photoelectric property integrated test system |
CN104979230A (en) * | 2015-07-13 | 2015-10-14 | 中国建材国际工程集团有限公司 | Device for measuring defect density of amorphous silicon thin film band gap |
-
2002
- 2002-12-26 CN CN 02294293 patent/CN2589968Y/en not_active Expired - Lifetime
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101398453B (en) * | 2007-09-26 | 2010-12-22 | 中国科学院半导体研究所 | Single light path quantum efficiency test system |
CN101871992A (en) * | 2010-06-28 | 2010-10-27 | 常州亿晶光电科技有限公司 | Alternating current measuring device for quantum efficiency of solar battery and using method thereof |
CN101881807A (en) * | 2010-06-28 | 2010-11-10 | 常州亿晶光电科技有限公司 | Alternating-current measuring device for quantum efficiency of solar cell |
CN101893680A (en) * | 2010-06-28 | 2010-11-24 | 常州亿晶光电科技有限公司 | Direct current measurement device for quantum efficiency of solar cell |
CN101893679A (en) * | 2010-06-28 | 2010-11-24 | 常州亿晶光电科技有限公司 | Direct-current measuring device for quantum efficiency of solar cell and using method thereof |
CN102097539A (en) * | 2011-01-20 | 2011-06-15 | 南昌航空大学 | Device and method for continuously modulating photoinduced voltage of semiconductor hetetrojunction |
CN102097539B (en) * | 2011-01-20 | 2012-09-19 | 南昌航空大学 | Device and method for continuously modulating photoinduced voltage of semiconductor hetetrojunction |
CN104458598A (en) * | 2014-12-12 | 2015-03-25 | 张晓勇 | Novel photoelectric property integrated test system |
CN104979230A (en) * | 2015-07-13 | 2015-10-14 | 中国建材国际工程集团有限公司 | Device for measuring defect density of amorphous silicon thin film band gap |
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Legal Events
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20090306 Address after: Jiangnan hi tech Zone, South Ring Road, Licheng District, Fujian City, Quanzhou Province, China: 362000 Patentee after: Fujian Golden Sun Solar Technic Co., Ltd. Address before: Tianjin City, Wei Jin Road No. 94, zip code: 300071 Patentee before: Nankai University |
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ASS | Succession or assignment of patent right |
Owner name: FUJIAN JUNSHI ENERGY CO., LTD. Free format text: FORMER OWNER: NANKAI UNIV. Effective date: 20090306 |
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EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Apollo Precision (Fujian) Limited Assignor: Fujian Golden Sun Solar Technic Co., Ltd. Contract fulfillment period: 2009.6.1 to 2012.5.31 Contract record no.: 2009350000197 Denomination of utility model: Multifunctional photoelectric parameter measuring device Granted publication date: 20031203 License type: General permission Record date: 20090826 |
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Free format text: COMMON LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2009.6.1 TO 2012.5.31; CHANGE OF CONTRACT Name of requester: FUJIAN APOLLO PRECISION EQUIPMENT CO., LTD. Effective date: 20090826 |
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Owner name: HANERGY HOLDING GROUP CO., LTD. Free format text: FORMER OWNER: FUJIAN GOLDEN SUN SOLAR TECHNIC CO., LTD. Effective date: 20111121 |
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Free format text: CORRECT: ADDRESS; FROM: 362000 QUANZHOU, FUJIAN PROVINCE TO: 101407 HUAIROU, BEIJING |
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Effective date of registration: 20111121 Address after: 101407 Beijing Huairou Yanqi Industrial Development Zone District No. 59 room 148 Patentee after: Hina Holding Group Co. Ltd. Address before: 362000 Jiangnan hi tech Zone, South Ring Road, Licheng District, Fujian, Quanzhou Patentee before: Fujian Golden Sun Solar Technic Co., Ltd. |
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ASS | Succession or assignment of patent right |
Owner name: KUNMING BOYANG YUANHONG ENERGY TECHNOLOGY CO., LTD Free format text: FORMER OWNER: HANERGY HOLDING GROUP CO., LTD. Effective date: 20120718 |
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Free format text: CORRECT: ADDRESS; FROM: 101407 HUAIROU, BEIJING TO: 650031 KUNMING, YUNNAN PROVINCE |
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Effective date of registration: 20120718 Address after: 650031, Yunnan, Kunming province by the development of open road 3, science and Technology Innovation Park, room A25-6 Patentee after: KUNMING APOLLO YUANHONG ENERGY SCIENCE & TECHNOLOGY CO., LTD. Address before: 101407 Beijing Huairou Yanqi Industrial Development Zone District No. 59 room 148 Patentee before: Hina Holding Group Co. Ltd. |
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Expiration termination date: 20121226 Granted publication date: 20031203 |