CN2589968Y - Multifunctional photoelectric parameter measuring device - Google Patents
Multifunctional photoelectric parameter measuring device Download PDFInfo
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- CN2589968Y CN2589968Y CN 02294293 CN02294293U CN2589968Y CN 2589968 Y CN2589968 Y CN 2589968Y CN 02294293 CN02294293 CN 02294293 CN 02294293 U CN02294293 U CN 02294293U CN 2589968 Y CN2589968 Y CN 2589968Y
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- 238000009434 installation Methods 0.000 claims description 3
- 238000005259 measurement Methods 0.000 abstract description 18
- 230000003287 optical effect Effects 0.000 abstract description 11
- 238000001579 optical reflectometry Methods 0.000 abstract description 10
- 230000005540 biological transmission Effects 0.000 abstract description 6
- 238000012423 maintenance Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 15
- 238000001228 spectrum Methods 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 238000010606 normalization Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
The utility model discloses a multifunctional photoelectric parameter measuring device. The utility model solves the problems that under the condition of perpendicular incidence light, an existing instrument can not measure the light reflectivity R, and the measurement function is single, etc. The utility model has the technical proposal that a light source is connected with a monochromator, a wave chopper is arranged at an output slit of the monochromator, an output terminal of the wave chopper is provided with a semi-transparent and semi-reflective lens M, and the interior of a transmission light path is provided with a focusing lens which has a focusing point in a sample chamber. One side of the sample chamber is provided with a laser at the part which is vertical to a transmission beam, and the other side is provided with a position sensing detector. The space between the sample chamber and the laser and the place between the sample chamber and the position sensing detector are respectively provided with focusing lenses. An optical detector is arranged on a reflection light path. Output terminals of the optical detector and the position sensing detector are respectively connected with input terminals of a phase-locked amplifier. An output terminal of the phase-locked amplifier is connected with an input terminal of a computer. Thus, many functions are achieved in one machine. A great amount of equipment fund, lab places and labor on maintenance management are saved.
Description
Affiliated technical field
The utility model relates to the measurement mechanism of a kind of material optics, electric property.
Background technology
At present, measure the instrument of material photoelectric parameter, the light reflectivity R of energy measurement material not under the vertical incidence optical condition can not detect the micro-light absorption of photoelectric semiconductor material, and measurement function is single.As existing spectrophotometer, can only be in limited range transmissivity, the reflectivity of measuring light; In addition, when light transmission rate T, the light reflectivity R of different angles MEASUREMENTS OF THIN material, the two is not a related data; Especially exist under the situation of interfering, measurement data may produce the situation of T+R 〉=1, makes light absorption irrational negative value occur.For another example, photoconductive spectrometer can only be measured the photoconductive parameter of material, and its measurement function is single, and measuring different parameters just needs different separately instruments.Like this, not only waste equipment funds, place, laboratory, and aspect maintenance management, also cause waste of manpower resource.
The utility model content
The utility model designs in order to address the aforementioned drawbacks, its objective is provide a kind of under the vertical incidence optical condition light reflectivity R of energy measurement material, integrate multiple and measure, save lab space and cost, quickening measuring speed and reduce the multifunctional light electrical parameter measuring device that experiment is paid wages.
The technical solution of the utility model is: comprise that mainly light source, monochromator, chopper, photo-detector, position sensor, lock-in amplifier, computing machine, semi-transparent semi-reflecting lens, laser instrument and sample chamber constitute; Light source links to each other with monochromator, at the output slit place of monochromator chopper is installed, and a semi-transparent semi-reflecting lens M is set in the light path of chopper output terminal, and a condenser lens is arranged in the light path of transmitted light beam, and focus is in the sample chamber; In a side of sample chamber and with the perpendicular place of transmitted light beam laser instrument, opposite side installation site sensing detector are installed; Be separately installed with condenser lens between sample chamber and the laser instrument and between sample chamber and the Position-Sensitive Detector, photo-detector is set on reflected light path; The output terminal of photo-detector and position sensor links to each other with the input end of lock-in amplifier respectively, and the output terminal of lock-in amplifier links to each other with input end and computer.
The beneficial effects of the utility model are: owing in light path, set up semi-transparent semi-reflecting lens (it can carry out divided beams), and semi-transparent semi-reflecting lens and incident light angle at 45.Therefore, can under the vertical incidence optical condition, measure the light reflectivity R of material.When measurement has the light reflectivity R that interferes the performance optoelectronic thin film material, can guarantee to have correlativity with the transmitance of vertical incidence photo measure, can be used for the calculating of optical parametric jointly, having avoided the two is not that situations such as irrational negative value appear in the possible T+R of related data, measurement data 〉=1, light absorption; This device can also be measured electricity, the electronics parameter of material simultaneously, as photoconduction spectrum, photoelectric cell quantum efficiency and photothermal deflection spectrum, integrates multiple and measures, and realizes multi-functional machine.Like this, can save the human resources of a large amount of equipment funds, place, laboratory and maintenance management aspect.
Description of drawings
Fig. 1 is light path of the present utility model and structural representation block scheme.
Fig. 2 is the light path and the structural representation block scheme of the utility model measuring light transmitance.
Fig. 3 is light path and a structural representation block scheme of using the utility model measuring light reflectivity.
Fig. 4 uses light path and the structural representation block scheme that the utility model is measured photoconduction spectrum and the measurement of photoelectric cell quantum efficiency.
Embodiment
Below in conjunction with accompanying drawing the utility model is described in further detail.
As shown in Figure 1, light source adopts combined light source, deuterium lamp and halogen tungsten lamp and controllable electric power thereof; Monochromator adopts grating monochromator, and it exports monochromatic wavelength is 200nm～2500nm; Photo-detector adopts vacuum thermopile, Si or P
bS photo-detector, optical position sensor adopt two photodiode formula optical position sensors, lock-in amplifier to adopt EG ﹠amp; G 5208, laser instrument He-Ne laser instrument; Light source links to each other with monochromator, at the output slit place of monochromator chopper is installed, and a semi-transparent semi-reflecting lens M is set in the light path of chopper output terminal, and a condenser lens is arranged in the light path of transmitted light beam, and focus is in the sample chamber; In a side of sample chamber and with the perpendicular place of transmitted light beam laser instrument, opposite side installation site sensing detector are installed; Be separately installed with condenser lens between sample chamber and the laser instrument and between sample chamber and the Position-Sensitive Detector, photo-detector is set on reflected light path; The output terminal of photo-detector and position sensor links to each other with trivial amplifier input terminal mutually respectively, and the output terminal of lock-in amplifier links to each other with input end and computer.
The best scheme of the utility model is the light beam angle at 45 in semi-transparent semi-reflecting lens M and the chopper output terminal light path.
1. measuring light transmitance: as shown in Figure 2, use light source, monochromator, chopper, semi-permeable and semi-reflecting mirror M, photo-detector, lock-in amplifier, computer combined in this device, can measure the light transmission rate of material sample.
During measurement, do not inserting under the sample situation, at first, the output light of the light intensity of each wavelength of scanning survey, monochromator is through chopper copped wave, and by the semi-permeable and semi-reflecting mirror M reflection, light will enter photo-detector along the direction of arrow, output signal deposits data in computing machine after being amplified by lock-in amplifier; Then, dispose sample before the detector entrance window, carry out same measurement, twice measurement result carried out normalization in computing machine, and the transmitance that can draw sample concerns with wavelength change.
2. measuring light reflectivity: as shown in Figure 3, use light source, monochromator, chopper, semi-permeable and semi-reflecting mirror M, photo-detector, lock-in amplifier, computing machine and sample chamber combination in this device, can measure the light reflectivity of material sample, but different is that semi-transparent semi-reflecting lens is wanted the half-twist degree, and sample surfaces keeps vertical with incident ray when measuring with assurance.
During measurement, the standard reflection mirror is placed light beam and the position vertical with light beam of passing semi-transparent semi-reflecting lens M, carry out length scanning, the light intensity signal of computer recording different wave length; Replace the standard reflection mirror with sample, carry out length scanning once more, and record sample light intensity data; To sample data normalization, promptly obtain the light vertical reflection rate R of sample with the data of standard reflection mirror.
If there is the interference peaks (paddy) of two (or more than) in reflectivity with the curve of wavelength variations, then can utilize the optical interference formula to calculate the thickness d of membraneous material by the wavelength data of corresponding interference peaks (paddy) and the refractive index of sample.
Can calculate absorption coefficient (λ) by light reflectivity R (λ), light transmission rate T (λ), thickness d, and further obtain optical band gap Eg.
3. measure (constant) photoconduction spectrum: as shown in Figure 4, use middle light source, monochromator, chopper, photo-detector, semi-transparent semi-reflecting lens, sample chamber, lock-in amplifier, computer combined in this device can measure (constant) photoconduction spectrum; What this combination was different is that fanout is connected with light source, can control the light output of light source, makes the photocurrent in the measuring process keep a certain constant, is constant photoconduction spectrum.Therefore, photoconductive spectrometry there is following requirement:
(1) sample: to film sample, requiring to produce coplanar electrodes on material, is area of illumination between two electrodes.Electrode is drawn and can be adopted the bonding electric wire of silver slurry, or the way of spring leaf contact.(2) circuit connects: voltage source, lock-in amplifier current input terminal, sample electrode are connected into the loop.(3) sample is placed: sample places the sample chamber, makes monochromatic light can fully shine zone between two potential electrode of sample, and guarantees that sample can not be subjected to extraneous light and disturb.
Measure: come the photocurrent of excited sample with the light that sees through semi-transparent semi-reflecting lens M, lock-in amplifier 1 amplifies back input computing machine with photocurrent; Photo-detector receives reflective light intensity signal input computing machine after lock-in amplifier 2 amplifies of semi-transparent semi-reflecting lens M, and after monochromator was to each wavelength single pass, computing machine was just noted light intensity numerical value and the photocurrent numerical value under each wavelength.
Calculate: computing machine is converted into photoconductive numerical value with the photoelectricity flow valuve, and light intensity numerical value carries out normalization then, obtains photoconductivity spectrum response curve σ (λ), i.e. the photoconduction spectrum.
4. measurement quantum efficiency: use the quantum efficiency as all right measurement photoelectric cells of device of Fig. 4, different is that it is without additional power source.Tested photoelectric cell is placed on the sample chamber, excites photronic photocurrent with the light that sees through semi-transparent semi-reflecting lens M, lock-in amplifier 1 amplifies back input computing machine with photocurrent; Photo-detector receives reflective light intensity signal input computing machine after lock-in amplifier 2 amplifies of semi-transparent semi-reflecting lens M, and after monochromator was to each wavelength single pass, computing machine was just noted light intensity numerical value and the photoelectric cell photocurrent numerical value under each wavelength.
Computing machine is converted into the photon number of corresponding each wavelength (unit interval) incident with light intensity numerical value, and photocurrent is converted into the photo-generated carrier number that the unit interval produces; The two relatively can obtain quantum efficiency, it be one less than 1 number.
5. the measuring light thermal deflection is composed: whole combinations of Fig. 1 are measuring light thermal deflection spectrum structural representation block schemes.Semi-transparent semi-reflecting lens M is divided into two parts with monochromatic light, and the part that reflexes to photodetector is used for the energy of measuring light, and transmission partly is used to excite the photo-thermal effect of measured material, and laser instrument and position sensitive detector are used for the measuring light thermal deflection.
(1) sample vertically stands up in the quartzy box transparent in the sample chamber, the monochromatic light vertical focusing shines sample surfaces, the laser measurement light beam skims over sample surfaces, forms confocally at sample surfaces with monochromatic light, is full of in the quartzy box and measures working medium (being generally phenixin).
(2) open laser instrument, under the situation that sample is not shone by monochromatic light, adjust the position (PSD is two photodiodes that the gap is very little usually) of position sensor (PSD), when the exploring laser light bundle equated two photodiode irradiations, position sensor PDS was output as zero.
(3) be mapped to sample surfaces with the illumination that sees through semi-transparent semi-reflecting lens M, the heat that absorption of sample light produces, making and producing one in the sample surfaces liquid is the temperature gradient field at center with the irradiation focus, the rising of localized liquid temperature changes its optical index, form by one " liquid lens ", when measuring laser beam was passed through to be somebody's turn to do " lens ", light will deflect.Deflection distance with light beam before so that increase (geometric proportion), position sensor PSD detects amount of deflection, is amplified by lock-in amplifier 1, and is input to computing machine; Photo-detector receives by the light intensity signal of semi-transparent semi-reflecting mirror reflection, is amplified by lock-in amplifier 2, and data are imported computing machine.
In fact the amount of deflection of measuring beam has reflected the light absorption of sample, after to light intensity normalization, has just obtained the characteristic of sample light absorption under the different wave length.Because its sensitivity is very high, therefore, can be used for detecting minimum absorption coefficient of light α.
Claims (2)
1. multifunctional light electrical parameter measuring device, its feature comprise that mainly light source, monochromator, chopper, photo-detector, position sensor, lock-in amplifier, computing machine, laser instrument and sample chamber constitute; Light source links to each other with monochromator, at the output slit place of monochromator chopper is installed, and a semi-transparent semi-reflecting lens M is set in the light path of chopper output terminal, and a condenser lens is arranged in the light path of transmitted light beam, and focus is in the sample chamber; In a side of sample chamber and with the perpendicular place of transmitted light beam laser instrument, opposite side installation site sensing detector are installed; Be separately installed with condenser lens between sample chamber and the laser instrument and between sample chamber and the Position-Sensitive Detector, photo-detector is set on reflected light path; The output terminal of photo-detector and position sensor links to each other with the input end of lock-in amplifier respectively, and the output terminal of lock-in amplifier links to each other with input end and computer.
2. according to the multifunctional light electrical parameter measuring device described in the claim 1, it is characterized in that semi-transparent semi-reflecting lens and incident light angle at 45.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02294293 CN2589968Y (en) | 2002-12-26 | 2002-12-26 | Multifunctional photoelectric parameter measuring device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02294293 CN2589968Y (en) | 2002-12-26 | 2002-12-26 | Multifunctional photoelectric parameter measuring device |
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| CN2589968Y true CN2589968Y (en) | 2003-12-03 |
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| CN 02294293 Expired - Lifetime CN2589968Y (en) | 2002-12-26 | 2002-12-26 | Multifunctional photoelectric parameter measuring device |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101871992A (en) * | 2010-06-28 | 2010-10-27 | 常州亿晶光电科技有限公司 | Alternating current measuring device for quantum efficiency of solar battery and using method thereof |
| CN101881807A (en) * | 2010-06-28 | 2010-11-10 | 常州亿晶光电科技有限公司 | Alternating-current measuring device for quantum efficiency of solar cell |
| CN101893680A (en) * | 2010-06-28 | 2010-11-24 | 常州亿晶光电科技有限公司 | Direct current measurement device for quantum efficiency of solar cell |
| CN101893679A (en) * | 2010-06-28 | 2010-11-24 | 常州亿晶光电科技有限公司 | Direct-current measuring device for quantum efficiency of solar cell and using method thereof |
| CN101398453B (en) * | 2007-09-26 | 2010-12-22 | 中国科学院半导体研究所 | Single light path quantum efficiency test system |
| CN102097539A (en) * | 2011-01-20 | 2011-06-15 | 南昌航空大学 | Device and method for continuously modulating photoinduced voltage of semiconductor hetetrojunction |
| CN104458598A (en) * | 2014-12-12 | 2015-03-25 | 张晓勇 | Novel photoelectric property integrated test system |
| CN104979230A (en) * | 2015-07-13 | 2015-10-14 | 中国建材国际工程集团有限公司 | Device for measuring defect density of amorphous silicon thin film band gap |
-
2002
- 2002-12-26 CN CN 02294293 patent/CN2589968Y/en not_active Expired - Lifetime
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101398453B (en) * | 2007-09-26 | 2010-12-22 | 中国科学院半导体研究所 | Single light path quantum efficiency test system |
| CN101871992A (en) * | 2010-06-28 | 2010-10-27 | 常州亿晶光电科技有限公司 | Alternating current measuring device for quantum efficiency of solar battery and using method thereof |
| CN101881807A (en) * | 2010-06-28 | 2010-11-10 | 常州亿晶光电科技有限公司 | Alternating-current measuring device for quantum efficiency of solar cell |
| CN101893680A (en) * | 2010-06-28 | 2010-11-24 | 常州亿晶光电科技有限公司 | Direct current measurement device for quantum efficiency of solar cell |
| CN101893679A (en) * | 2010-06-28 | 2010-11-24 | 常州亿晶光电科技有限公司 | Direct-current measuring device for quantum efficiency of solar cell and using method thereof |
| CN102097539A (en) * | 2011-01-20 | 2011-06-15 | 南昌航空大学 | Device and method for continuously modulating photoinduced voltage of semiconductor hetetrojunction |
| CN102097539B (en) * | 2011-01-20 | 2012-09-19 | 南昌航空大学 | Device and method for continuously modulating photoinduced voltage of semiconductor hetetrojunction |
| CN104458598A (en) * | 2014-12-12 | 2015-03-25 | 张晓勇 | Novel photoelectric property integrated test system |
| CN104979230A (en) * | 2015-07-13 | 2015-10-14 | 中国建材国际工程集团有限公司 | Device for measuring defect density of amorphous silicon thin film band gap |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20090306 Address after: Jiangnan hi tech Zone, South Ring Road, Licheng District, Fujian City, Quanzhou Province, China: 362000 Patentee after: Fujian Golden Sun Solar Technic Co., Ltd. Address before: Tianjin City, Wei Jin Road No. 94, zip code: 300071 Patentee before: Nankai University |
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| ASS | Succession or assignment of patent right |
Owner name: FUJIAN JUNSHI ENERGY CO., LTD. Free format text: FORMER OWNER: NANKAI UNIV. Effective date: 20090306 |
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| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Apollo Precision (Fujian) Limited Assignor: Fujian Golden Sun Solar Technic Co., Ltd. Contract fulfillment period: 2009.6.1 to 2012.5.31 Contract record no.: 2009350000197 Denomination of utility model: Multifunctional photoelectric parameter measuring device Granted publication date: 20031203 License type: General permission Record date: 20090826 |
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Free format text: COMMON LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2009.6.1 TO 2012.5.31; CHANGE OF CONTRACT Name of requester: FUJIAN APOLLO PRECISION EQUIPMENT CO., LTD. Effective date: 20090826 |
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| ASS | Succession or assignment of patent right |
Owner name: HANERGY HOLDING GROUP CO., LTD. Free format text: FORMER OWNER: FUJIAN GOLDEN SUN SOLAR TECHNIC CO., LTD. Effective date: 20111121 |
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Free format text: CORRECT: ADDRESS; FROM: 362000 QUANZHOU, FUJIAN PROVINCE TO: 101407 HUAIROU, BEIJING |
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| TR01 | Transfer of patent right |
Effective date of registration: 20111121 Address after: 101407 Beijing Huairou Yanqi Industrial Development Zone District No. 59 room 148 Patentee after: Hina Holding Group Co. Ltd. Address before: 362000 Jiangnan hi tech Zone, South Ring Road, Licheng District, Fujian, Quanzhou Patentee before: Fujian Golden Sun Solar Technic Co., Ltd. |
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| ASS | Succession or assignment of patent right |
Owner name: KUNMING BOYANG YUANHONG ENERGY TECHNOLOGY CO., LTD Free format text: FORMER OWNER: HANERGY HOLDING GROUP CO., LTD. Effective date: 20120718 |
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| C41 | Transfer of patent application or patent right or utility model | ||
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Free format text: CORRECT: ADDRESS; FROM: 101407 HUAIROU, BEIJING TO: 650031 KUNMING, YUNNAN PROVINCE |
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| TR01 | Transfer of patent right |
Effective date of registration: 20120718 Address after: 650031, Yunnan, Kunming province by the development of open road 3, science and Technology Innovation Park, room A25-6 Patentee after: KUNMING APOLLO YUANHONG ENERGY SCIENCE & TECHNOLOGY CO., LTD. Address before: 101407 Beijing Huairou Yanqi Industrial Development Zone District No. 59 room 148 Patentee before: Hina Holding Group Co. Ltd. |
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| C17 | Cessation of patent right | ||
| CX01 | Expiry of patent term |
Expiration termination date: 20121226 Granted publication date: 20031203 |