CN2526981Y - High-efficient LED - Google Patents

High-efficient LED Download PDF

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Publication number
CN2526981Y
CN2526981Y CN02207287U CN02207287U CN2526981Y CN 2526981 Y CN2526981 Y CN 2526981Y CN 02207287 U CN02207287 U CN 02207287U CN 02207287 U CN02207287 U CN 02207287U CN 2526981 Y CN2526981 Y CN 2526981Y
Authority
CN
China
Prior art keywords
light
emitting diode
metallic matrix
chip
backlight unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN02207287U
Other languages
Chinese (zh)
Inventor
黄晞
葛世潮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang Manelux Lighting Co Ltd
Original Assignee
葛世潮
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 葛世潮 filed Critical 葛世潮
Priority to CN02207287U priority Critical patent/CN2526981Y/en
Application granted granted Critical
Publication of CN2526981Y publication Critical patent/CN2526981Y/en
Priority to EP02790249A priority patent/EP1467414A4/en
Priority to AU2002367196A priority patent/AU2002367196A1/en
Priority to KR1020047010358A priority patent/KR100991830B1/en
Priority to CNB028261275A priority patent/CN100373638C/en
Priority to US10/500,315 priority patent/US7497596B2/en
Priority to PCT/CN2002/000930 priority patent/WO2003056636A1/en
Priority to JP2003557050A priority patent/JP2005513815A/en
Priority to KR1020097019925A priority patent/KR20090115810A/en
Priority to KR1020097019923A priority patent/KR100991827B1/en
Priority to KR1020097019924A priority patent/KR100991829B1/en
Priority to US11/430,914 priority patent/US7347589B2/en
Priority to US12/265,911 priority patent/US7736027B2/en
Priority to JP2009241098A priority patent/JP2010050472A/en
Priority to JP2009241101A priority patent/JP2010050473A/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating

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  • Led Device Packages (AREA)

Abstract

The utility model relates to a light emitting diode (LED) with high power and high efficiency, which comprises at least one LED chip which is installed on a metal base body. The metal base body is provided with a screw or a screw hole used for connecting with a heat radiating device. An optical reflector and a light transmission medium in a certain shape are arranged on the chip. Electrodes of the chip are led out through the metal base body and lead wires which are insulating from the metal base body respectively. Therefore, the LED with high power and high efficiency can be made. The utility model is used for illumination, traffic lamps, automotive lamps, information display, etc. Compared with the prior art, the utility model has the characteristics of high efficiency, high power, long service life, etc.

Description

High efficient LED
Technical field
What the present invention relates to is a kind of efficient high power light-emitting diode, is used for illumination, traffic lights, auto lamp and information demonstration etc.
Background technology
At present, light-emitting diode has been widely used in display, indicator light etc.Fig. 1 is the light-emitting diode structure schematic diagram of prior art, it includes the chip 1 of light-emitting diode, it is installed in the reverberation bowl 3 at metal lead wire 2 tops, another lead-in wire 4 of light-emitting diode links to each other with light-emitting diode chip for backlight unit 1 by metal lead wire 5, light transmission medium 6, for example epoxy resin are arranged around the chip 1.A light part 7 of sending by light-emitting diode chip for backlight unit 1 can be directly or via reverberation bowl 3 from the outgoing of light transmission medium top, this part is useful light; But will be escaped from the Side face of light-emitting diode by another part light 8 that light-emitting diode chip for backlight unit 1 sends, in addition some 9 will produce total reflection and escape from the Side face of light-emitting diode in light-emitting diode.Simultaneously, be also shown in, be adiabatic light transmission medium around the existing light-emitting diode chip for backlight unit by Fig. 1, and lead-out wire 2 is a thin metal wire, and the heat that light-emitting diode chip for backlight unit produces is difficult to dissipate effectively, and chip temperature is raise, luminous efficiency descends, thereby is difficult to make large-power light-emitting diodes.Summing up above existing in prior technology deficiency has: the one, and the light-emitting diode chip for backlight unit issued light can not be fully utilized, and the light that part is sent from chip can lose from light-emitting diode Side wall with because of the total reflection of the light of light-emitting diode inside; Particularly when using than large tracts of land or a plurality of light-emitting diode chip for backlight unit in order to make the high-power high-efficiency light-emitting diode, these losses are just even more serious; The 2nd, chip is installed in the little chaff, around this metallic object and the chip all is light transmission medium, epoxy resin for example, described light transmission medium is the non-conductor of heat, and the electrical power of input tube core has 80% will be transformed into heat energy approximately, thereby chip temperature is raise, and straight line descends and the luminous efficiency of existing light-emitting diode chip for backlight unit is almost with the rising of temperature, thereby is difficult to make the high-power high-efficiency light-emitting diode.
Summary of the invention
The purpose of this utility model is to overcome the deficiency of above-mentioned existence, and a kind of light-emitting diode that can be made into high efficiency various power is provided.It comprises at least one light-emitting diode chip for backlight unit, metallic matrix and light transmission medium, described light-emitting diode chip for backlight unit is installed on the reflecting surface of high heat conductivity metal matrix, have on the reflecting surface of described metallic matrix by plastics, epoxy resin or metal reflector, the reflecting surface of this reflector is silver, aluminium or the alloy-layer of high reflectance, and it can will be sent by chip, may be utilized again from the light reflected back reflective metals matrix that light-emitting diode Side face is escaped or lost because of inner total reflection; A metallic matrix and a heat abstractor link, and the heat that it can produce chip effectively dissipates, thereby makes the state of chip operation in high efficiency lower temperature, thereby can be made into the high-power high-efficiency light-emitting diode; Described electrode of light emitting diode is drawn through lead-in wire or with metallic matrix, between lead-in wire and metallic matrix insulating barrier is arranged,
One screw or screw hole are arranged on the described metallic matrix, be used for linking with heat abstractor, metallic matrix is made by high thermal conductivity materials such as copper, silver or alloys, and its reflecting surface is silver, aluminium or the alloy-layer of high reflectance, and the heat conductive insulating layer is arranged between metallic matrix and heat abstractor.
Have on the surface of emission of described metallic matrix by plastics, epoxy resin or metal reflector, the reflecting surface of this reflector is silver, aluminium or the alloy-layer of high reflectance.
Described at least one chip can be identical illuminant colour or not homochromy, and they are parallel connection, series connection or connection in series-parallel on demand.
On described at least one light-emitting diode chip for backlight unit light-converting material can be arranged, it can absorb the light that light-emitting diode chip for backlight unit sends, for example blue light or ultraviolet light, thus and the light that sends other required look can be made into the light-emitting diode of white light or other required coloured light.
Described insulating barrier can be a circuit board ring, is made by pottery or epoxy circuit board etc., and its upper surface has conductive layer to be used to connect lead-in wire and lead-out wire and is used for connection between a plurality of chips.
The efficient scattering device of light-emitting diode of the present utility model and light reflection assembling device work under the high efficiency lower temperature light-emitting diode chip for backlight unit, and the chip issued light can fully obtain utilizing.It is compared with the light-emitting diode of prior art, has advantages such as efficient height, power is big, the life-span is long.
Description of drawings
Fig. 1 is the principle schematic of light loss of the light-emitting diode of prior art.
Fig. 2 is the example structure schematic diagram of efficient high power light-emitting diode of the present utility model
Fig. 3 is the another example structure schematic diagram of high efficient LED of the present utility model
Embodiment
Below in conjunction with accompanying drawing the utility model is described in detail.Fig. 2 is the theory structure schematic diagram of the embodiment of efficient high power light-emitting diode of the present utility model, it includes at least one light-emitting diode chip for backlight unit 10, and it is fixed on the reflecting surface or reverberation bowl 12 on the metallic matrix 11 of high heat conductivity metal, for example copper, silver etc.Described metallic matrix 11 also has screw 13 or screw hole (not shown), is used for it is connected with heat abstractor 14.Described metallic matrix 11 can directly closely contact with scattering device 14, also thermal conductance insulating barrier 15 can be arranged between the two.If the positive and negative electrode of light-emitting diode chip for backlight unit 10 is respectively in the end face and the bottom surface of chip, then conducting resinl 16 such as bottom-side electrodes available silver slurry links to each other with metallic matrix 11, its end face electrode then through go between 17 and with metallic matrix 11 by drawing with the lead-in wire 18 of insulating barrier 19 insulation, be used to connect external power.Lead-in wire 18 also can be drawn from the Side face of light-emitting diode.If the positive and negative electrode of chip 10 is all at end face, then one of them electrode can 20 link to each other with metallic matrix 11 through going between, and also can draw through another lead-in wire similar to 18.When chip has when a plurality of, described lead-in wire 18 can have a plurality of on demand; At this moment the also available nonconducting glue of the glue 16 between chip 10 and the matrix 11.
Described insulating barrier 19 can be a circuit board ring, is made by pottery or epoxy circuit board etc., and its upper surface has conductive layer 26, is used to connect lead-in wire 17 and lead-out wire 18 and is used for connection between a plurality of chips.
There is a light reflecting device 21 top of described chip 10, and it is made by conductor or non-conductor, for example plastics, epoxy resin or metal etc.The one side of its object chip 10 is high refractive index layer 22, for example silver or aluminium lamination etc.This reflecting surface 22 can be utilized the light 23 reflected back reverberation bowls 12 that may escape by light-emitting diode Side face or through inner total reflection again, thereby improves the utilance of light.
Around the described chip 10 be light transmission medium 24, for example epoxy resin or optical cement etc., and it is transparent, painted or diffusion, its end face can be designed to plane, sphere, ellipsoid or other aspheric surface by the requirement of exporting photo structure.
Structure shown in Figure 2 can obtain the light-emitting diode of high efficiency, the powerful output angle of not sharing the same light, and chooses the shape and size of different light-emitting diodes, can obtain required different light output angle.
Described at least one light-emitting diode chip for backlight unit 10 can be identical illuminant colour or different colors, and they are parallel connection, series connection or connection in series-parallel on demand.
Also light-converting material 25 can be arranged on described at least one light-emitting diode chip for backlight unit 10, it can absorb chip 10 issued lights, and the light of required look is sent in for example blue light or ultraviolet ray, thereby can be made into the light-emitting diode of white light or other required coloured light.
Figure 3 shows that the theory structure schematic diagram of another embodiment of the present utility model.Reflective optical system 21 is arranged among Fig. 3, at this moment chip 10 issued lights 27 can be directly or via reverberation bowl 12 and or through reflector 21 reflections by light transmission medium 6 outputs.Identical among the digital meaning of among Fig. 3 other and Fig. 1.

Claims (6)

1, a kind of high efficient LED, it comprises at least one light-emitting diode chip for backlight unit, metallic matrix and light transmission medium, it is characterized in that described light-emitting diode chip for backlight unit (10) is installed on the reflecting surface (12) of high heat conductivity metal matrix (11), metallic matrix (11) links with a heat abstractor (14); The electrode of described light-emitting diode chip for backlight unit (10) is drawn through metallic matrix (11) and lead-in wire (17,18) respectively, between lead-in wire (18) and metallic matrix (11) insulating barrier (19) is arranged,
2, high efficient LED as claimed in claim 1, it is characterized in that a screw (13) or screw hole are arranged on the described metallic matrix (11), be used for and heat abstractor (14) binding, metallic matrix (11) is made by high thermal conductivity materials such as copper, silver or alloys, its reflecting surface (12) is silver, aluminium or the alloy-layer of high reflectance, between metallic matrix (11) and heat abstractor (14) heat conductive insulating layer (15) is arranged
3, high efficient LED as claimed in claim 1, it is characterized in that having by plastics, epoxy resin or metal reflector (21) on the surface of emission (12) of described metallic matrix, the reflecting surface (22) of this reflector (21) is silver, aluminium or the alloy-layer of high reflectance.
4, high efficient LED as claimed in claim 1 is characterized in that described at least one chip (10) can be identical illuminant colour or not homochromy, and they are parallel connection, series connection or connection in series-parallel on demand.
5,, it is characterized in that on described at least one light-emitting diode chip for backlight unit (10) light-converting material (25) being arranged as claim 1 or 4 described high efficient LEDs.
6, high efficient LED as claimed in claim 1, it is characterized in that described insulating barrier (19) can be a circuit board ring, made by pottery or epoxy circuit board etc., its upper surface has conductive layer (26) to be used for connecting lead-in wire (17) and lead-out wire (18) and is used for connection between a plurality of chips.
CN02207287U 2001-12-29 2002-03-09 High-efficient LED Expired - Fee Related CN2526981Y (en)

Priority Applications (15)

Application Number Priority Date Filing Date Title
CN02207287U CN2526981Y (en) 2002-03-09 2002-03-09 High-efficient LED
KR1020097019924A KR100991829B1 (en) 2001-12-29 2002-12-30 A LED and LED lamp
JP2003557050A JP2005513815A (en) 2001-12-29 2002-12-30 Light emitting diode and light emitting diode lamp
KR1020097019925A KR20090115810A (en) 2001-12-29 2002-12-30 A LED and LED lamp
KR1020047010358A KR100991830B1 (en) 2001-12-29 2002-12-30 A LED and LED lamp
CNB028261275A CN100373638C (en) 2001-12-29 2002-12-30 LED and LED lamp thereof
US10/500,315 US7497596B2 (en) 2001-12-29 2002-12-30 LED and LED lamp
PCT/CN2002/000930 WO2003056636A1 (en) 2001-12-29 2002-12-30 A led and led lamp
EP02790249A EP1467414A4 (en) 2001-12-29 2002-12-30 A led and led lamp
AU2002367196A AU2002367196A1 (en) 2001-12-29 2002-12-30 A led and led lamp
KR1020097019923A KR100991827B1 (en) 2001-12-29 2002-12-30 A LED and LED lamp
US11/430,914 US7347589B2 (en) 2001-12-29 2006-05-10 LED and LED lamp
US12/265,911 US7736027B2 (en) 2001-12-29 2008-11-06 LED and LED lamp
JP2009241098A JP2010050472A (en) 2001-12-29 2009-10-20 Light emitting diode lamp, and light emitting diode traffic light
JP2009241101A JP2010050473A (en) 2001-12-29 2009-10-20 Light emitting diode plane light source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN02207287U CN2526981Y (en) 2002-03-09 2002-03-09 High-efficient LED

Publications (1)

Publication Number Publication Date
CN2526981Y true CN2526981Y (en) 2002-12-18

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN02207287U Expired - Fee Related CN2526981Y (en) 2001-12-29 2002-03-09 High-efficient LED

Country Status (1)

Country Link
CN (1) CN2526981Y (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100373639C (en) * 2004-02-20 2008-03-05 百容电子股份有限公司 Base of light-emitting dipolar body
CN102097576A (en) * 2010-12-30 2011-06-15 江苏欣力光电有限公司 Light emitting diode (LED) copper bracket

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100373639C (en) * 2004-02-20 2008-03-05 百容电子股份有限公司 Base of light-emitting dipolar body
CN102097576A (en) * 2010-12-30 2011-06-15 江苏欣力光电有限公司 Light emitting diode (LED) copper bracket

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: HANGZHOU FUYANG NOVELTY ELECTRONICS CO., LTD.

Free format text: FORMER OWNER: GE SHICHAO

Effective date: 20040109

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20040109

Address after: Hangzhou City, Zhejiang province 311404 Fuyang new economic and Technological Development Zone building full of e

Patentee after: Hangzhou Fuyang Novel Electronics Co., Ltd.

Address before: Two road 310012 Zhejiang city in Hangzhou Province, the Qiuzhi Lane room 2-203

Patentee before: Ge Shichao

C56 Change in the name or address of the patentee

Owner name: ZHEJIANG MANELUX LIGHTING CO., LTD.

Free format text: FORMER NAME: HANGZHOU FUYANG XINYING ELECTRONICS CO., LTD.

CP01 Change in the name or title of a patent holder

Address after: Hangzhou City, Zhejiang Province, Fuyang Economic Development Zone building full of Xindeng e, zip code: 311404

Patentee after: Zhejiang Manelux Lighting Co., Ltd.

Address before: Hangzhou City, Zhejiang Province, Fuyang Economic Development Zone building full of Xindeng e, zip code: 311404

Patentee before: Hangzhou Fuyang Novel Electronics Co., Ltd.

C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20021218

Termination date: 20110309