CN2457738Y - Micro laser beam scanning spectrum device based on laser beam induction current - Google Patents
Micro laser beam scanning spectrum device based on laser beam induction current Download PDFInfo
- Publication number
- CN2457738Y CN2457738Y CN 00265492 CN00265492U CN2457738Y CN 2457738 Y CN2457738 Y CN 2457738Y CN 00265492 CN00265492 CN 00265492 CN 00265492 U CN00265492 U CN 00265492U CN 2457738 Y CN2457738 Y CN 2457738Y
- Authority
- CN
- China
- Prior art keywords
- laser beam
- sample
- laser
- microcobjective
- induced current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The utility model discloses a micro laser beam scanning spectrum device based on laser beam induction current. The utility model comprises a helium-neon laser, an acoustic-optic modulator, a light beam expander, a light beam splitter, a CCD video camera, and a sample, an amplifier and a computer which are arranged on a three-dimension sample adjusting frame with two stepping motors. Laser beams which are expanded and converged are radiated on the sample, the generated induction current signals from the sample are amplified by the amplifier. The whole test is controlled by the computer for collection, storage, and data processing. The utility model has the advantages of simple structure, convenient measure, and no destruction to the sample. The utility model can be used for on-line test in the process of large area photovoltaic device technology, and can also be used for the measuring the electric active defects of semiconductor materials.
Description
The utility model relates to a kind of measurement mechanism that is used for the online detection of semiconductor photovoltaic device technical process photoelectric characteristic, is specifically related to a kind of micro laser beam scanning spectrum device based on laser beam induced current.
Infrared Detectors develops into focal plane array device from unit component, line array device.But preparation high-quality, large tracts of land focal plane device is present still very difficult, and complex process, cost are high, lack good method of testing and device.After preparing device, be connected at present the photoelectric characteristic that just can learn device often with reading circuit, or individual devices is drawn output electrode measure one by one, this method of measurement disadvantage is device to be had to a certain degree destroy, next is that workload is very big, thousands of to the first number of large-area multicomponent device, measure like this and almost can't finish so big workload at all.The detection of technical process is to optimizing technology, and it is very necessary improving device performance and reducing cost, but above-mentioned two kinds of methods all are unsuitable for the online detection of device preparation technology process.
The purpose of this utility model provides the measurement mechanism of the online detection in a kind of destruction simple in structure, non-, the practical semiconductor photovoltaic multicomponent device preparation process.
The utility model is achieved through the following technical solutions: the wavelength of helium neon laser emission is to be equipped with acousto-optic modulator 2 successively on the LASER Light Source 1 of the 0.6328 μ m direction of advancing, 45 ° of plane completely reflecting mirrors 3, light beam expander 4, beam splitter 5, ccd video camera 6, assemble microcobjective 7, place the sample 8 on the three-dimensional sample adjustment rack 9 that has stepper motor 10,11.The induced current output that produces on the sample is through preamplifier 12, lock-in amplifier 13, and digital voltmeter 14, computer 15 link.Stepper motor 10,11 and computer 15 link.
LASER Light Source 1 becomes thousands of hertz high-frequency impulse light after acousto-optic modulator 2 modulation, through 3 reflections of 45 ° of plane completely reflecting mirrors, expand bundle by beam expander device 4, behind beam splitter 5, light beam enters assembles microcobjective 7, and the laser beam incident through assembling microcobjective 7 convergences is to sample 8, and a part of light that incides on the sample produces induced current, another part light again through assembling microcobjective 7, beam splitter 5, incides ccd video camera 6 through the sample surfaces reflection.
Said ccd video camera is used for monitoring laser bundle hot spot, and laser beam is focused on the surface of sample just, and this is to realize by the adjusting of regulating three-dimensional sample frame Z direction.Said LASER Light Source power is 20-30mW, and beam diameter is about 1mm.Said beam expander device is used for beam diameter is enlarged about 40 times, is in order to improve the angle of divergence of laser with the purpose of beam expander.Assemble microcobjective and be used for wide laser beam is converted into small light spot, the physical dimension of hot spot is less than magnitude of unit P-N knot physical dimension at least.Two stepper motors are used to drive three-dimensional adjustable shelf, and X and Y direction that laser beam is opposite on the sample on the three-dimensional trim holder mutually scan, and stepper motor is by computer control.So once just can finish the measurement of thousands of focal plane array device unit.
The small light spot laser beam incident is during to semi-conducting material surperficial, as long as the photon energy of laser greater than the energy gap of material, then can produce electronics, the hole is right, when having internal field in the material, electronics one hole continues to separate under the effect of internal field to meeting, and then forms electric current.Because without any extra electric field, this electric current depends on the characteristic of internal field fully, so this electric current has reflected internal field's characteristic of material.Defective in the material often can form internal field, and this defective comprises stress, sediment, dislocation etc., so this device can be used for the detection of defects from semiconductor materials.P-N knot on the photovoltaic device is the artificial period profile electric field of making, in the both sides of knot because transverse photovoltaic effect, thereby generation laser beam induced current, and be little luminous point owing to throw light on away from P-N knot place, illumination is asymmetrical, producing the photovoltaic effect that is parallel to knot, also can produce induced current during asymmetric lighting away from P-N knot place.In sum, when laser beam during along the point by point scanning of P-N knot, can produce the induced current of positive and negative two peak structure, be zero at how much mid point induced currents of knot, and induced current is an exponential damping outside knot.It must be noted that the diameter of laser beam will be significantly smaller than the physical dimension of P-N knot, want a little magnitude at least.And be used to detect defects from semiconductor materials, and the size of laser spot also should be enough little, and the diameter of laser beam has determined the resolution of measurement result.
This device has the following advantages:
1. this apparatus structure is simple, and it is convenient to measure, and the photoelectric characteristic of the detection of the electroactive defective of semi-conducting material, photovoltaic device is measured only to be needed to draw output electrode in the relative two edges of sample and get final product; In the device preparation technology process, once just can finish the measurement of thousands of unit to multicomponent device with the mode of scanning, and to sample destruction not.
2. this measurement device is highly sensitive, and the micro current technology is quite flourishing at present, and the variation of electroactive defective in the material and P-N knot can cause that all Weak current changes, and can extremely accurately measure the fine structure and the inner minor variations of sample P-N knot.
3. this device resolution height, the spot size of laser beam can reach 0.3 μ m to 3 μ m, and no matter the defective to material is enough little to device size still.
4. the measured scanning spectrum of this device contains profuse information, and for example Jie the degree of depth, doping content etc. have direct influence to laser beam induced current shape, size, peak.
This to install employed parts are existing all purpose instruments on the market, thereby greatly reduce cost.Because the laser power that is adopted is very high, after 40 times of light beam expansions, though only with a very little part that expands after restrainting, its power is for enough as exciting induced current to be still.Owing to adopted 40 times beam expander, the angle of divergence of laser beam reduces greatly, so can use the convergence microcobjective of low multiplication factor, still can obtain than small light spot, it must be noted that, employed microcobjective, because its more general biology microscope object lens of operating distance will be grown, therefore this object lens price is very expensive, multiplying power high price more is expensive more, multiplication factor is also wanted import greater than 10 times object lens at present, owing to can use than the low range object lens, therefore the price of this device has been reduced again.
Description of drawings:
Fig. 1: a kind of micro laser beam scanning spectrum device schematic diagram based on laser beam induced current;
Fig. 2: the laser beam induced current spectrogram of photovoltaic mercury-cadmium-tellurium focal plane device.
Embodiment:
On the experimental provision of Fig. 1, sample is the photovoltaic mercury-cadmium-tellurium focal plane device that places in the Dewar container for liquefied nitrogen bottle, the Dewar container for liquefied nitrogen bottle places on the three-dimensional trim holder again, and the relative sample position of laser beam is made X and Y to scanning, and the functional relation of laser beam induced current and position promptly is the laser beam induced current collection of illustrative plates.The collection of measurement and data is finished by computer.Typical consequence is shown in Fig. 2.
Claims (3)
1. micro laser beam scanning spectrum device based on laser beam induced current, comprise helium neon laser, acousto-optic modulator, speculum, light beam expander, beam splitter, ccd video camera, convergence microcobjective, sample, stepper motor, three-dimensional sample adjustment rack, preamplifier, lock-in amplifier, digital voltmeter, computer, it is characterized in that:
Be equipped with acousto-optic modulator (2), 45 ° of plane completely reflecting mirrors (3), light beam expander (4), beam splitter (5), ccd video camera (6) on the direction that the light source (1) of helium neon laser emission advances according to this, assemble microcobjective (7), place the sample (8) on the three-dimensional sample adjustment rack (9) that has stepper motor (10), (11); The induced current output that produces on the sample links through preamplifier (12), lock-in amplifier (13), digital voltmeter (14), computer (15); Stepper motor (10), (11) link with computer;
LASER Light Source (1) is after acousto-optic modulator (2) modulation, reflect through 45 ° of plane completely reflecting mirrors (3), expand bundle by beam expander device (4), behind beam splitter (5), light beam enters assembles microcobjective (7), laser beam incident through assembling microcobjective (7) convergence is to sample (8), and a part of light again through assembling microcobjective (7), beam splitter (5), incides ccd video camera (6) through the sample surfaces reflection.
2. according to claim 1. micro laser beam scanning spectrum device based on laser beam induced current, it is characterized in that: it is 30-40 that said beam expander device (4) expands the bundle multiplying power.
3. according to claim 1. micro laser beam scanning spectrum device based on laser beam induced current, it is characterized in that: said LASER Light Source (1) power is 20-30mW.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00265492 CN2457738Y (en) | 2000-12-27 | 2000-12-27 | Micro laser beam scanning spectrum device based on laser beam induction current |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00265492 CN2457738Y (en) | 2000-12-27 | 2000-12-27 | Micro laser beam scanning spectrum device based on laser beam induction current |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2457738Y true CN2457738Y (en) | 2001-10-31 |
Family
ID=33619861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 00265492 Expired - Fee Related CN2457738Y (en) | 2000-12-27 | 2000-12-27 | Micro laser beam scanning spectrum device based on laser beam induction current |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2457738Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100465620C (en) * | 2006-01-18 | 2009-03-04 | 中国科学院上海技术物理研究所 | 600-700nm band Fourier transform infrared photoluminescence spectrum measuring method and apparatus |
| CN100465617C (en) * | 2006-01-18 | 2009-03-04 | 中国科学院上海技术物理研究所 | Photo-modulated reflectance spectrum measuring method and apparatus based on step scan |
| CN105044584A (en) * | 2015-07-03 | 2015-11-11 | 中国科学院物理研究所 | System used for detecting charge and electric field response of semiconductor device |
-
2000
- 2000-12-27 CN CN 00265492 patent/CN2457738Y/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100465620C (en) * | 2006-01-18 | 2009-03-04 | 中国科学院上海技术物理研究所 | 600-700nm band Fourier transform infrared photoluminescence spectrum measuring method and apparatus |
| CN100465617C (en) * | 2006-01-18 | 2009-03-04 | 中国科学院上海技术物理研究所 | Photo-modulated reflectance spectrum measuring method and apparatus based on step scan |
| CN105044584A (en) * | 2015-07-03 | 2015-11-11 | 中国科学院物理研究所 | System used for detecting charge and electric field response of semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4874251A (en) | Thermal wave imaging apparatus | |
| CN101806723B (en) | Double-beam multifunctional z-scanning optical nonlinear measuring device and method | |
| CN105973808B (en) | Liquid laser ablation prepares nano particle mechanism process detection device and method | |
| CN104279978A (en) | Three-dimensional figure detecting device and measuring method | |
| CN108519218B (en) | Optical element multiwavelength laser damage measure and analysis system | |
| Phillips et al. | High speed, intermediate resolution, large area laser beam induced current imaging and laser scribing system for photovoltaic devices and modules | |
| CN106769881A (en) | A kind of thermal conductivity scanning system that heat reflection technology is detected based on pumping | |
| CN111426700B (en) | Light and heat measuring device and measuring method for absorptive defect Shan Guangshu | |
| CN111141701A (en) | Rapid super-resolution imaging method and system based on terahertz single pulse | |
| CN109807471A (en) | A kind of laser mark printing device and method | |
| CN206540818U (en) | A kind of thermal conductivity scanning system that heat reflection technology is detected based on pumping | |
| CN102721664B (en) | A kind of multi-beam laser induction infrared radiation imaging device and method | |
| CN2457738Y (en) | Micro laser beam scanning spectrum device based on laser beam induction current | |
| CN112595493B (en) | Laser damage threshold and nonlinear absorption co-target surface measuring device and method | |
| CN110444095B (en) | Laser thermal lens focal length measurement experimental device | |
| CN108088815A (en) | Highly sensitive multiple beam refractive index detection device and method based on graphene surface ripple | |
| CN203365364U (en) | Thermal wave imaging system adopting laser asynchronous scanning | |
| CN203422336U (en) | Laser scanning thermal wave imaging system based on dynamic sub-window technology | |
| CN212646516U (en) | Single-beam photothermal measuring device for absorption defects | |
| CN107884599A (en) | Scan the multi-functional coupling in-situ measurement device of probe elliptical polarization | |
| CN1125324C (en) | System and method for detecting leakage by laser imaging | |
| Toker et al. | In-line optical surface roughness determination by laser scanning | |
| CN217466684U (en) | Imaging device for phase change process of material | |
| CN1085835C (en) | Light reflection difference method and device for detecting and monitoring epitaxial growth and thermal annealing of thin film | |
| CN110736749A (en) | Multipoint detection device and method for millimeter-scale vacuoles on fixed wall surface |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |