CN2413388Y - DH-Ga1 -xAlxAsLED rheotaxial wafer - Google Patents
DH-Ga1 -xAlxAsLED rheotaxial wafer Download PDFInfo
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- CN2413388Y CN2413388Y CN00203992U CN00203992U CN2413388Y CN 2413388 Y CN2413388 Y CN 2413388Y CN 00203992 U CN00203992 U CN 00203992U CN 00203992 U CN00203992 U CN 00203992U CN 2413388 Y CN2413388 Y CN 2413388Y
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Abstract
The utility model belongs to the field of semiconductor photoelectron material preparation. The utility model relates to the improvement of a DH-Ga< 1-x >A1< X >AsLED liquid phase epitaxial material wafer, which comprises a substrate 4, a limiting layer 3, a luminous layer 2 and a window layer 1. The luminous efficiency and the rate of finished products of the process of tube manufacture are considered uniformly. The utility model has the advantages that the luminous efficiency is high, liquid phase epitaxial process can be realized, and the utility model crates favorable conditions for the process of tube manufacture, so the rate of finished products can be guaranteed. The epitaxial wafer generated by the utility model has the advantages that the structural surface is bright; the convex distortion is obviously reduced; the luminous intensity is 10-12 mcd/20mA in general through the ultrasonic punching commercial measurement; the rate of finished products of tube manufacture is 70 percents.
Description
The invention belongs to the Semiconductor Optoeletronic Materials preparation field, relate to a kind of DH-Ga
1-xAl
xThe improvement of AsLED liquid phase epitaxy chip architecture.
Red DH-Ga
1-xAl
xAs LED luminescent material, because the lattice constant of its GaAs and AlAs only differs from 0.14%, be that other semiconductor mixed crystal luminescent material is incomparable, its laboratory LED sample quantum efficiency is 21%, the quantum efficiency of marketing has reached 15%, is present most important super brightness red LED material.On selected certain luminescent material system basis, want to bring into play its best luminous efficiency, must be optimized design to its epitaxial material structure parameter.With regard to DH-Ga
1-xAl
xAs/GaAs LED luminescent material, the elementary structure parameter of its epitaxial material is for limiting layer, luminescent layer and Window layer thickness, aluminium Al component and carrier concentration rational Match.Its optimal design value is not only best in theory, and will consider whether actual process may be implemented, and also will consider simultaneously the influence that LED technology is brought is made in the road, back.By introducing DH-Ga
1-xAl
xThe epitaxial material that As/GaAs LED liquid phase epitaxial method software is produced, wherein aluminium Al component is too high, as Window layer generally greater than 0.8, have up to 0.9; Outer layer growth is blocked up, as Window layer thickness generally greater than 45 μ m, have up to 69 μ m; Luminescent layer is generally greater than 3 μ m; The carrier concentration coupling is unreasonable.Because the design elementary structure parameter is unreasonable, make not high, the surperficial severe oxidation of its epitaxial wafer luminous efficiency and produce obvious convex distortion, like this road, back tube-making process is brought many difficulties, even be difficult to prepare qualified LED product.
It is not high to the objective of the invention is to solve the epitaxial wafer luminous efficiency of producing with prior art, produces obvious convex distortion, surperficial severe oxidation; Road, back tube-making process is brought problems such as many difficulties, a kind of DH-Ga is provided
1-xAl
xAs/GaAs LED liquid phase epitaxy sheet.
The present invention is according to optoelectronics and band theory, from limiting layer, luminescent layer and Window layer thickness, injection efficiency, internal quantum efficiency, the efficiency of transmission of all multi-parameters such as aluminium Al component and carrier concentration rational Match and light emitting semiconductor device and the relationship of getting optical efficiency are set out, calculate in theory on the best design basis, again according to process characteristic of liquid phase epitaxy own and back road tube-making process requirement, the Design Theory parameter is adjusted, determined optimal design parameter at last.
Project organization of the present invention is as shown in Figure 1: it comprises Window layer 1, luminescent layer 2, limits layer 3, substrate 4, and wherein the thickness of substrate 4 is: 300-400 μ m, aluminium Al component are: 0, carrier concentration is: 1 * 10
19Cm
-3The growth thickness that limits layer 3 is: 10-15 μ m, aluminium Al component are: 0.70-0.77, carrier concentration is (1-2) * 10
18Cm
-3The growth thickness of luminescent layer 2 is: 1.0-2.0 μ m, aluminium Al component are: 0.40-0.44, carrier concentration is: (3-7) * 10
17Cm
-3Window layer 1 growth thickness is: 15-25 μ m, aluminium Al component are: 0.70-0.75, carrier concentration is: (0.7-1) * 10
18Cm
-3
The present invention's unified consideration luminous efficiency and tube-making process rate of finished products, the epitaxial wafer luminous efficiency that has solved prior art production is not high, produces obvious convex distortion, surperficial severe oxidation; Back road tube-making process is brought problems such as many difficulties, provide a kind of and can bring into play DH-Ga that its higher luminous efficiency, liquid phase epitaxial method can realize, also create favorable conditions, guaranteed for road, back tube-making process rate of finished products again
1-xAl
xAs/GaAs LED liquid phase epitaxy sheet.The epitaxial slice structure surface-brightening that adopts the present invention to produce, the convex distortion obviously diminishes, and through ultrasonic punching commercial measurement, its luminous intensity is generally 10-12mcd/20mA, and the tubulation rate of finished products reaches 70%.The process software of formulating by optimal design of the present invention carries out DH-Ga
1-xAl
xAs/GaAs LED rheotaxial growth, it is as shown in the table for its elementary structure parameter after tested:
Embodiments of the invention: wherein the thickness of substrate 4 is chosen as: 300,350,400 μ m, aluminium Al component are: 0, carrier concentration is: 1 * 10
19Cm
-30.70,0.75,0.77, carrier concentration is (1-2) * 10 growth thickness that limits layer 3 is: 10,12,15 μ m, aluminium Al component are:
18Cm
-30.40,0.42,0.44, carrier concentration is: (3,5,7) * 10 growth thickness of luminescent layer 2 is: 1.0,1.5,2.0 μ m, aluminium Al component are:
17Cm
-30.70,0.72,0.75, carrier concentration is: (0.7,0.8,1) * 10 Window layer 1 growth thickness is: 15,20,25 μ m, aluminium Al component are:
18Cm
-3
Claims (1)
1, a kind of DH-Ga
1-xAl
xAs LED liquid phase epitaxy sheet, it comprises substrate 4, it is characterized in that: the thickness of substrate 4 is: 300-400 μ m, aluminium Al component are: 0, carrier concentration is: 1 * 10
19Cm
-3The growth thickness that limits layer 3 is: 10-15 μ m, aluminium Al component are: 0.70-0.77, carrier concentration is (1-2) * 10
18Cm
-3The growth thickness of luminescent layer 2 is: 1.0-2.0 μ m, aluminium Al component are: 0.40-0.44, carrier concentration is: (3-7) * 10
17Cm
-3Window layer 1 growth thickness is: 15-25 μ m, aluminium Al component are: 0.70-0.75, carrier concentration is: (0.7-1) * 10
18Cm
-3
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN00203992U CN2413388Y (en) | 2000-02-29 | 2000-02-29 | DH-Ga1 -xAlxAsLED rheotaxial wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN00203992U CN2413388Y (en) | 2000-02-29 | 2000-02-29 | DH-Ga1 -xAlxAsLED rheotaxial wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2413388Y true CN2413388Y (en) | 2001-01-03 |
Family
ID=33572509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN00203992U Expired - Fee Related CN2413388Y (en) | 2000-02-29 | 2000-02-29 | DH-Ga1 -xAlxAsLED rheotaxial wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2413388Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102148301A (en) * | 2010-02-09 | 2011-08-10 | 晶元光电股份有限公司 | Optoelectronic element and manufacturing method thereof |
| CN102339929A (en) * | 2010-07-29 | 2012-02-01 | 富士迈半导体精密工业（上海）有限公司 | Method for manufacturing LED (Light-Emitting Diode) light-emitting component |
-
2000
- 2000-02-29 CN CN00203992U patent/CN2413388Y/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102148301A (en) * | 2010-02-09 | 2011-08-10 | 晶元光电股份有限公司 | Optoelectronic element and manufacturing method thereof |
| CN102148301B (en) * | 2010-02-09 | 2014-02-12 | 晶元光电股份有限公司 | Optoelectronic element and manufacturing method thereof |
| CN102339929A (en) * | 2010-07-29 | 2012-02-01 | 富士迈半导体精密工业（上海）有限公司 | Method for manufacturing LED (Light-Emitting Diode) light-emitting component |
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|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |