CN2282680Y - Vacuum microelectronic gas sensor - Google Patents
Vacuum microelectronic gas sensor Download PDFInfo
- Publication number
- CN2282680Y CN2282680Y CN 97235628 CN97235628U CN2282680Y CN 2282680 Y CN2282680 Y CN 2282680Y CN 97235628 CN97235628 CN 97235628 CN 97235628 U CN97235628 U CN 97235628U CN 2282680 Y CN2282680 Y CN 2282680Y
- Authority
- CN
- China
- Prior art keywords
- air chamber
- gas sensor
- deck
- glass flake
- utility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
Abstract
The utility model discloses a vacuum microelectronic gas sensor. Electrodes are positioned on a silicon underlay; silicon oxide is positioned on the electrodes; a single crystal silicon body is positioned on the silicon oxide; an ionized gas room is arranged in the middle of the single crystal silicon body; a cathode emission tip is arranged in the middle of the ionized gas room. A glass flake, the bottom of which has a positive electrode is positioned above the ionized gas room. The utility model has the advantages of small volume, less power consumption, simple fabrication, good selectivity, high reliability, strong anti-interference ability, strong anti-radiation ability, high testing precision and stable performance.
Description
The utility model relates to the gas sensor technology.
Existing semiconductor gas sensor, highly sensitive with it, response and recovery are fast, and manufacture craft is simple, and advantages such as low price are widely used in fields such as military affairs, industry, agricultural and environment.But also there are some shortcomings in existing semiconductor gas sensor, as: gas-selectively is poor, is subjected to temperature, the composition of ambiance in tested atmosphere, and the influence of factors such as humidity and air pressure makes that its stability and reliability are all undesirable.
The purpose of this utility model just provides a kind of existing good stability, and good reliability and optionally, microelectronic vacuum gas sensor are arranged again.
Vacuum microelectronic device has quick response, switching speed and frequency of operation height, and capability of resistance to radiation is strong, to the insensitive characteristic of high and low temperature.
The utility model is applied to gas detection with vacuum microelectronics technique exactly.
Below in conjunction with accompanying drawing, the utility model is illustrated it.
Accompanying drawing 1 is a structure cut-open view of the present utility model.
Among the figure: 1, light-sensitive detector; 2, excited radiation light; 3, electrode (positive pole); 4, monox (SiO
2); 5, electrode (negative pole); 6, ionization air chamber; 7, silicon substrate; 8, glass flake; 9, emission of cathode tip; 10, monocrystalline silicon body.
Structure of the present utility model is that one deck negative electrode (5) is arranged on silicon substrate (7) as shown in Figure 1, is one deck monox (SiO thereon
2) (4); On monox (4), be one deck monocrystalline silicon body (10), a low vacuum ionization air chamber (6) is arranged therebetween; Emission of cathode tip (9) is arranged in ionization air chamber (6); Be glass flake (8) on ionization air chamber (6), one deck pectination positive electrode (3) arranged in the bottom surface of glass flake (8).Light-sensitive detector (1) is placed on the top of glass flake (8).
In ionization air chamber (6), fill micro-gas to be measured with, as H
2, CO
2, CO etc., at positive and negative electrode (3), (5) two ends added electric field, emission of cathode tip (9) produce the high-pressure ion discharge like this.Because of in the ionization air chamber (6) gas to be measured being arranged, radiation ionic light (2) after being excited, this light signal is received by light-sensitive detector (1).
When detected gas, gas absorption excited radiation light to be measured (2) causes the variation of light intensity in the environment, makes light-sensitive detector have signal to change, just can know by inference survey and have or not gas to be measured in the environment.
The utility model has the advantages that, volume little (100 * 100 μ m), power consumption is little, energy savings, Make simply, selectively good, the reliability height, antijamming capability is strong, and capability of resistance to radiation is strong, is encircled Border temperature effect is little, accuracy of detection height, stable performance.
Claims (2)
1. a microelectronic vacuum gas sensor is characterized in that, one deck negative electrode is arranged on the silicon substrate, is one deck monox on it; Be one deck monocrystalline silicon body on silicon oxide layer, the ionization air chamber is arranged therebetween; The emission of cathode tip is arranged in the ionization air chamber; Be glass flake on the ionization air chamber, there is one deck pectination positive electrode the bottom surface of glass flake; Light-sensitive detector is placed on the top of glass flake.
2. sensor as claimed in claim 1 is characterized in that, is filled with hydrogen in the described ionization air chamber, carbon dioxide or CO gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 97235628 CN2282680Y (en) | 1997-04-01 | 1997-04-01 | Vacuum microelectronic gas sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 97235628 CN2282680Y (en) | 1997-04-01 | 1997-04-01 | Vacuum microelectronic gas sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2282680Y true CN2282680Y (en) | 1998-05-27 |
Family
ID=33946676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 97235628 Expired - Fee Related CN2282680Y (en) | 1997-04-01 | 1997-04-01 | Vacuum microelectronic gas sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2282680Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100501362C (en) * | 2007-02-08 | 2009-06-17 | 厦门大学 | Vacuum sensor |
-
1997
- 1997-04-01 CN CN 97235628 patent/CN2282680Y/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100501362C (en) * | 2007-02-08 | 2009-06-17 | 厦门大学 | Vacuum sensor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Kang et al. | Hydrogen and ozone gas sensing using multiple ZnO nanorods | |
| JPH09210963A (en) | Solid gas sensor | |
| US3909386A (en) | Gas detector unit | |
| Wu et al. | A practical vacuum sensor based on a ZnO nanowire array | |
| JP2005504961A (en) | Solid potentiometric gas oxide sensor | |
| CN105954333A (en) | Gold nanobelt three-electrode sensor used for monitoring heavy metal and preparation method thereof | |
| Mizsei et al. | Resistivity and work function measurements on Pd-doped SnO2 sensor surface | |
| LaConti et al. | Electrochemical detection of H2, CO, and hydrocarbons in inert or oxygen atmospheres | |
| CN2282680Y (en) | Vacuum microelectronic gas sensor | |
| CN202928977U (en) | Nitric oxide gas-sensitive sensor element | |
| Lee et al. | Low power thick film CO gas sensors | |
| CN104407034A (en) | Gas sensor chip | |
| Taniguchi et al. | Sensing Properties of an Oxygen Sensor Using BaCe0. 8Gd0. 2 O 3− α Ceramics as Electrolytes | |
| US3821090A (en) | Method for directly measuring no2 in air | |
| KR20050005896A (en) | Thin film type Carbon Dioxide gas sensor | |
| CN109884122B (en) | Organic gas detection chip based on rhenium sulfide nano device | |
| CN201903532U (en) | Double-sensitive-layer bulk acoustic wave hydrogen resonance sensor | |
| Boukezzata et al. | Al-Assisted photochemical etching of a-SiC thin films for NH3 sensor | |
| Chou et al. | Development of a disposable all-solid-state ascorbic acid biosensor and miniaturized reference electrode fabricated on single substrate | |
| Watson | The stannic oxide gas sensor | |
| CN203350211U (en) | Porous silicon gas sensor element detecting nitric oxide gas very fast | |
| CN113588876B (en) | Method for improving selectivity of nitrogen dioxide semiconductor sensor | |
| CN203365372U (en) | Porous silicon ammonia sensor element used for indoor temperature detection | |
| CN102102217A (en) | Method for manufacturing alumina film by micro-arc oxidation | |
| CN1057384C (en) | Step array cathode vacuum microelectronic pressure sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |