CN2249451Y - Technical device of high-density plasma - Google Patents
Technical device of high-density plasma Download PDFInfo
- Publication number
- CN2249451Y CN2249451Y CN 95209870 CN95209870U CN2249451Y CN 2249451 Y CN2249451 Y CN 2249451Y CN 95209870 CN95209870 CN 95209870 CN 95209870 U CN95209870 U CN 95209870U CN 2249451 Y CN2249451 Y CN 2249451Y
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- China
- Prior art keywords
- radio
- density plasma
- match circuit
- another
- power supply
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- Expired - Fee Related
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- Plasma Technology (AREA)
Abstract
The utility model discloses a technical device of high-density plasma, which is composed of a cavity seat of a low-pressure gas cavity, an insulating cover, radio-frequency rings, and other portions and is used for fine processing of a semiconductor. The technical device of high-density plasma uses a multi-stage tower-shaped insulating cover body; according to top and bottom sequence, a connected group of multi-loop radio-frequency rings can surround on the external wall of each step of the tower-shaped cover, and the wire ends of the top layers of the multi-loop radio-frequency rings and the coils on the lowest layer are connected with a radio-frequency power supply through a matched circuit. The technical device of high-density plasma can stably generate the high-density plasma within lower-pressure ranges.
Description
The utility model relates to a kind of process unit semiconductor retrofit, produce high-density plasma under low pressure that is applicable to.
In the technical field of semiconductor retrofit, in order to realize being the figure of hyperfine size, have etch rate efficiently again, prior art has developed process unit multiple inductive coupling type, produce high-density plasma under low pressure.This class device of prior art all is that plane radio-frequency coil is set outside the insulating cover of low pressure gas body cavity, in order to realize the induction coupling, makes and produces highdensity plasma in the chamber.Although their working ranges applicable to 1 to 20 milli torr (mTorr) are all claimed by the inventor of this class device and manufacturer, but in practical operation, under the low pressure of less than 5 milli torrs, this class device often is difficult for starter or aura shakiness, shows that it produces high-density plasma and exists difficulty in low pressure scope so more.
The purpose of this utility model is for overcoming the above-mentioned defective of prior art, by improving the shape and structure of low pressure gas body cavity insulating cover and radio-frequency coil, realize better induction coupling, make in the air chamber of low pressure scope more and can stably produce highdensity plasma.
For realizing that the technical measures that the utility model purpose is taked are, in the high-density plasma process unit of partly forming by chamber seat, insulating cover, radio-frequency power supply, match circuit and the radio-frequency coil etc. of low pressure gas body cavity, make insulating cover have the tower shape profile of multistage layer, and the one group of multiturn radio-frequency coil that makes continuous connection is centered around respectively on each stratum's outer wall of insulating cover according to order up and down, and top layer coil links to each other with radio-frequency power supply through match circuit with the line end of orlop coil.
By the induction coil arrangement architecture that on the insulating cover outer wall, is provided with like this, enlarged the inductive spacing of low-pressure gas in the cover, received that more effectively excitation produces the effect of plasma, making in the more low pressure scope of 1 to 5 milli torr still can starter and produce stable aura.
Below in conjunction with accompanying drawing and embodiment to this practical being further described in detail.
Accompanying drawing is the entity schematic diagram of an embodiment of the utility model high-density plasma process unit.1 is the chamber seat of low pressure gas body cavity among the figure, in chamber seat (1), be provided with air inlet (2), gas outlet (3), slide glass electrode (4), grid bias power supply (5) and seal washer (6) etc., 7 is multistage layer turriform transparent quartz shroud, each tower layer outer wall is round the radio-frequency coil (8) that connects successively, and radio-frequency coil (8) is drawn via match circuit (9) by its top layer and undermost line end respectively and is connected to radio-frequency power supply (10).Match circuit (9) is by a transformer (T), a capacitor (C
1) and two tunable capacitor (C
2And C
3) form.The output of transformer (T) and capacitor (C
1) the two poles of the earth connect, and be connected with two line ends of radio-frequency coil (8) as the output of joining a circuit (9).An input and a tunable capacitor (C of transformer (T)
2) a utmost point connect this tunable capacitor (C
2) another utmost point and another tunable capacitor (C
3) a utmost point connect, and link to each other with an output of radio-frequency power supply (10) as an input of match circuit (9).Another input of transformer (T) and another tunable capacitor (C
3) another utmost point connect, and link to each other with another output of radio-frequency power supply (10) as another input of match circuit (9).Radio-frequency power supply (10) is the radio-frequency power supply of adapted SY type.
Claims (3)
1, a kind ofly is applicable to the semiconductor retrofit, the high-density plasma process unit of partly forming by chamber seat, insulating cover, radio-frequency power supply, match circuit and the radio-frequency coil etc. of low pressure gas body cavity, it is characterized in that, described insulating cover is the tower shape insulation cover body of multistage layer, described radio-frequency coil is the one group of multiturn coil that connects continuously, it is centered around on each stratum's outer wall of tower shape cover body according to order up and down, and its top layer and orlop line end draw through described match circuit and be connected to described radio-frequency power supply.
2, according to the described high-density plasma process unit of claim 1, it is characterized by, described multistage layer tower shape insulating cover is the multistage layer tower shape insulation cover body of suprasil.
3, according to the described high-density plasma process unit of claim 1, it is characterized by, described match circuit is by a transformer, a capacitor and two tunable capacitors are formed, two outputs of transformer are connected with the two poles of the earth of capacitor, and be connected with two line ends of described radio-frequency coil as the output of described match circuit, an input of transformer is connected with a utmost point of a tunable capacitor, another utmost point of this tunable capacitor is connected with a utmost point of another tunable capacitor, and link to each other with an output of described radio-frequency power supply as an input of described match circuit, another input of transformer is connected with another utmost point of another tunable capacitor, and links to each other with another output of described radio-frequency power supply as another input of described match circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 95209870 CN2249451Y (en) | 1995-05-11 | 1995-05-11 | Technical device of high-density plasma |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 95209870 CN2249451Y (en) | 1995-05-11 | 1995-05-11 | Technical device of high-density plasma |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2249451Y true CN2249451Y (en) | 1997-03-12 |
Family
ID=33860759
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 95209870 Expired - Fee Related CN2249451Y (en) | 1995-05-11 | 1995-05-11 | Technical device of high-density plasma |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2249451Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100353484C (en) * | 2002-07-31 | 2007-12-05 | 兰姆研究有限公司 | Method for adjusting voltage on a powered faraday shield |
| CN101182628B (en) * | 2007-12-13 | 2010-06-02 | 上海交通大学 | Sputtering coating ion beam irradiation reinforcing method |
| CN106561447A (en) * | 2016-10-27 | 2017-04-19 | 合肥优亿科机电科技有限公司 | Radio frequency source high density low energy ion beam biological modification equipment |
-
1995
- 1995-05-11 CN CN 95209870 patent/CN2249451Y/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100353484C (en) * | 2002-07-31 | 2007-12-05 | 兰姆研究有限公司 | Method for adjusting voltage on a powered faraday shield |
| CN101182628B (en) * | 2007-12-13 | 2010-06-02 | 上海交通大学 | Sputtering coating ion beam irradiation reinforcing method |
| CN106561447A (en) * | 2016-10-27 | 2017-04-19 | 合肥优亿科机电科技有限公司 | Radio frequency source high density low energy ion beam biological modification equipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |