CN221282338U - Dual-frequency power divider with different power distribution ratios - Google Patents
Dual-frequency power divider with different power distribution ratios Download PDFInfo
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- CN221282338U CN221282338U CN202323124872.2U CN202323124872U CN221282338U CN 221282338 U CN221282338 U CN 221282338U CN 202323124872 U CN202323124872 U CN 202323124872U CN 221282338 U CN221282338 U CN 221282338U
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Abstract
The utility model discloses a dual-frequency power divider with different power distribution ratios, which belongs to the field of multi-frequency power dividers, and comprises a medium substrate, wherein an input port, a first output port and a second output port are arranged on the medium substrate, a first microstrip line is connected between the input port and the first output port, a third microstrip line is connected between the input port and the second output port, and a lumped resistance element is connected between the first output port and the second output port; the dual-frequency power divider with different power distribution ratios can realize different power division on any two specified frequencies, and has the advantages of small size, convenience in flexible design and processing and the like.
Description
Technical Field
The utility model relates to a dual-frequency power divider with different power distribution ratios, and belongs to the field of multi-frequency power dividers.
Background
In a wireless communication system, a power divider (abbreviated as a power divider) is used as one of important passive devices at the front end of a radio frequency, so that in order to meet the development trend of miniaturization, high integration and high performance of wireless communication equipment, the size of a circuit is gradually reduced while basic functions are realized, the performance of the circuit is improved, the circuit is easy to integrate, and meanwhile, the requirements of a plurality of working frequency bands are met.
In recent years, the application of the multi-frequency communication system is increasingly popular, and a power divider capable of working in any two or more frequency bands is designed, so that the circuit size can be effectively reduced, and the power divider has outstanding contribution to reducing insertion loss, improving noise characteristics and the like. In the wide application of modern wireless communication technology, the condition of unequal radio frequency power is often encountered, and the power of the output end of the power divider is required to be distributed according to a certain proportion. The unequal design of the conventional single-frequency power divider has a standard design thought and a complete closed calculation method, but the unequal research of the dual-frequency or even multi-frequency power divider has no research method of a comparison system. Therefore, research on dual and multi-frequency and Wilkinson power dividers with different power splitting ratios has important theoretical and practical values.
The utility model provides a double-frequency power divider with different power distribution ratios, which can realize different power division on any two designated frequencies and has the advantages of small size, convenience in flexible design and processing and the like.
Disclosure of utility model
The utility model provides a double-frequency power divider with different power distribution ratios, which can realize different power division on any two specified frequencies and has the advantages of small size, convenience in flexible design and processing and the like.
In order to achieve the above purpose, the utility model adopts the following technical scheme: the utility model provides a dual-frenquency merit divides ware with different power distribution ratios, includes the medium base plate, be equipped with input port, first output port, second output port on the medium base plate, input port with be connected with first microstrip line between the first output port, input port with be connected with the third microstrip line between the second output port, first output port with be connected with lumped resistance element between the second output port.
In some embodiments, the lumped resistance element includes a second microstrip line connected to the first output port, a fourth microstrip line connected to the second output port, the second microstrip line further connected to a first pi-type structure, the fourth microstrip line further connected to a second pi-type structure, and an isolation resistor connected between the first pi-type structure and the second pi-type structure.
In some embodiments, the characteristic impedance of the input port, the first output port, and the second output port is 50Ω.
In some embodiments, the first pi-type structure includes a fifth microstrip line connected to both the second microstrip line and the isolation resistor, and two ends of the fifth microstrip line are connected in parallel with a first open-circuit microstrip line.
In some embodiments, the second pi-type structure includes a sixth microstrip line connected to both the fourth microstrip line and the isolation resistor, and two ends of the sixth microstrip line are connected in parallel with a second open-circuit microstrip line.
In some embodiments, the isolation resistor has a resistance of 30Ω.
In some embodiments, the dielectric substrate is Rogers 5880, has a relative permittivity of 2.2, a substrate thickness of 0.508mm, and a loss tangent of 0.0009.
In some embodiments, the dual frequency power divider is capable of achieving different power divisions at two designated frequencies, i.e., 1:1 equal power allocations at 2GHz and 1:2 unequal power allocations at 4 GHz.
One or more technical solutions provided in the embodiments of the present application at least have the following technical effects or advantages:
The branch lines of the utility model have different lengths, and can realize unequal power distribution ratios, namely, the power ratios output on the two output ports are unequal; the power distribution method can be suitable for power distribution tasks under two different frequencies, and can realize distribution of input signals according to different power proportions; meanwhile, the structure is compact, and smaller size and higher integration level can be realized; the manufacturing process is simple and the cost is low.
Drawings
FIG. 1 is a schematic diagram of the structure of the present utility model;
FIG. 2 is a schematic diagram of the principle structure of the present utility model;
FIG. 3 is a schematic diagram of the principle structure of a conventional Gysel power divider;
FIG. 4 is an even mode equivalent circuit diagram of a Gysel power divider;
FIG. 5 is a schematic diagram of an equivalent structure of the present utility model;
FIG. 6 is a schematic diagram of the return loss (S11) of the input port of the present utility model;
Fig. 7 is a schematic diagram of the insertion loss (S21, S31) of the present utility model;
FIG. 8 is a graph showing return loss (S22, S33) of the first output port and the second output port according to the present utility model;
Fig. 9 is a schematic diagram of the isolation degree (S23) of the dual-frequency unequal power divider according to the present utility model.
The reference numerals are as follows: 1. a first microstrip line; 11. an input port; 2. a second microstrip line; 22. a first output port; 3. a third microstrip line; 33. a second output port; 4. a fourth microstrip line; 5. a first pi-type structure; 51. a fifth microstrip line; 52. a first open-circuit microstrip line; 6. a second pi-type structure; 61. a sixth microstrip line; 62. a second open-circuit microstrip line; 7. and isolating the resistor.
Detailed Description
Referring to fig. 1-9, a dual-frequency power divider with different power distribution ratios includes a dielectric substrate, on which an input port 11, a first output port 22, and a second output port 33 are disposed, a first microstrip line 1 is connected between the input port 11 and the first output port 22, a third microstrip line 3 is connected between the input port 11 and the second output port 33, and a lumped resistance element is connected between the first output port 22 and the second output port 33.
In some embodiments, the lumped resistance element comprises a second microstrip line 2 connected to the first output port 22, a fourth microstrip line 4 connected to the second output port 33, a first pi-type structure 5 is further connected to the second microstrip line 2, a second pi-type structure 6 is further connected to the fourth microstrip line 4, and an isolation resistor 7 is connected between the first pi-type structure 5 and the second pi-type structure 6.
In some embodiments, the first pi-type structure 6 includes a fifth microstrip line 51 connected to both the second microstrip line 2 and the isolation resistor 7, and first open-circuit microstrip lines 52 are connected in parallel to both ends of the fifth microstrip line 51.
In some embodiments, the second pi-type structure 6 includes a sixth microstrip line 61 connected to both the fourth microstrip line 4 and the isolation resistor 7, and second open-circuit microstrip lines 62 are connected in parallel to both ends of the sixth microstrip line 61.
The two operating frequencies of the present utility model are denoted as f 1 and f 2(f2＝nf1 respectively), and the characteristic impedances of the input port 11, the output port 22 and the output port 33 are 50Ω, denoted as Z 0.
The even mode equivalent diagram of the traditional dual-band Gysel power divider at two working frequencies is shown in fig. 3, and according to the definition of the power division ratio of the power divider as K 2＝P3/P2, it can be known that:
It can be deduced that:
As can be seen from fig. 3, the common node voltage at V 1 can be represented by ABCD parameters for two branches, respectively:
Substituting equation 2 into the real and imaginary parts of equation 3 yields:
Applying transmission line theory, under matching conditions that satisfy input port S11, the input admittance at node 1 should satisfy: y 0＝Y11+Y22, wherein the input admittances of Y 11 and Y 22 are respectively expressed as:
The real parts of the input admittances Y 11 and Y 22 can be expressed as:
To sum up, the characteristic impedance of Z 1、Z2 can be found to be:
Wherein,
The formula can be seen as follows:
Z2＝K1Z1sinθ1/sinθ2＝K2Z1sinnθ1/sinnθ2#(9)
Wherein, the value of θ 1,θ2 can be found:
Further, two sections of 90-degree transmission lines 5 and 6 and an isolation resistor are used to replace two grounding resistors and one section of 180-degree microstrip line, an equivalent structure diagram is shown in fig. 4, wherein Z 4＝Z1,Z3＝Z2 is obtained, in consideration of the processing difficulty of a photoetching process, impedance is matched by taking the isolation resistor 7 of 30 omega through simulation analysis, and the impedance value of Z 5、Z6 is calculated through impedance matching on the basis of determining Z 1,Z2,Z3,Z4.
Further, the first pi-type structure 5 and the second pi-type structure 6 are used to respectively equivalent two sections of 90 ° transmission lines 5 and 6, and the equivalent relationship between the two circuits is as follows:
Wherein,
Further, the specific parameters of each part of the utility model are optimized by ADS simulation software, and the characteristic impedance and the electrical length parameters of each transmission line are obtained as shown in the following table:
| Z1 | 55.7Ω | Zs1 | 49.9Ω |
| Z2 | 62.3Ω | Zs2 | 47.2Ω |
| Z3 | 62.3Ω | Zp1 | 149.6Ω |
| Z4 | 55.7Ω | Zp2 | 141.7Ω |
| θ1,θ4 | 65.9° | θ | 60° |
| θ2,θ3 | 54.7° | R | 30Ω |
The dielectric substrate adopted by the utility model is Rogers 5880, the relative dielectric constant is 2.2, the thickness of the substrate is 0.508mm, the loss tangent is 0.0009, and the schematic diagram and layout combined simulation is carried out by using ADS simulation software to obtain the S parameter diagram of the double-frequency unequal power divider.
As shown in fig. 6, S11 is the return loss at the input port 11 of the present utility model, which is-47.7 dB and-37.5 dB at two working frequencies f 1＝2GHz,f2 =4 GHz, and the relative bandwidths thereof are 12.5% and 5.5% respectively under the condition that the return loss is greater than 20 dB.
As shown in fig. 7, S21 is the insertion loss of the first port 22, S31 is the insertion loss of the second port 33, and S21 and S31 are respectively:
f1＝2GHz,S21＝-3.05dB,S31＝-2.99dB
f2＝4GHz,S21＝-1.80dB,S31＝-4.76dB
It can be seen that the utility model realizes equal power distribution at f 1, and simultaneously realizes unequal power distribution with the power ratio of 1:2 at f 2, thereby successfully realizing different power distribution ratios under different frequencies; i.e. 1:1 equal power allocation is achieved at 2GHz and 1:2 unequal power allocation is achieved at 4 GHz.
As shown in fig. 8, S22 is the return loss of the first port 22, S33 is the return loss of the second port 33, and S22, S33 are greater than 40dB at both center frequencies.
As shown in FIG. 9, S23 is the isolation of the utility model, S23 is-39.5 dB, -62.6dB respectively at two working frequencies, and the bandwidths of S23 is 1.76GHz-2.12GHz and 3.88GHz-4.32GHz respectively at 20 dB.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present utility model without departing from the spirit or scope of the utility model. Thus, it is intended that the present utility model also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (8)
1. The utility model provides a dual-frenquency merit divides ware with different power distribution ratio which characterized in that: the integrated circuit comprises a medium substrate, wherein an input port (11), a first output port (22) and a second output port (33) are arranged on the medium substrate, a first microstrip line (1) is connected between the input port (11) and the first output port (22), a third microstrip line (3) is connected between the input port (11) and the second output port (33), and a lumped resistance element is connected between the first output port (22) and the second output port (33).
2. The dual-frequency power divider with different power distribution ratios according to claim 1, wherein the lumped resistance element comprises a second microstrip line (2) connected with the first output port (22), a fourth microstrip line (4) connected with the second output port (33), a first pi-type structure (5) is further connected to the second microstrip line (2), a second pi-type structure (6) is further connected to the fourth microstrip line (4), and an isolation resistor (7) is connected between the first pi-type structure (5) and the second pi-type structure (6).
3. The dual frequency power divider with different power splitting ratios according to claim 1, characterized in that the characteristic impedance of the input port (11), the first output port (22) and the second output port (33) is 50 Ω.
4. The dual-frequency power divider with different power distribution ratios according to claim 2, wherein the first pi-type structure (5) comprises a fifth microstrip line (51) connected with the second microstrip line (2) and the isolation resistor (7), and both ends of the fifth microstrip line (51) are connected with first open-circuit microstrip lines (52) in parallel.
5. The dual-frequency power divider with different power distribution ratios according to claim 2, wherein the second pi-type structure (6) comprises a sixth microstrip line (61) connected with the fourth microstrip line (4) and the isolation resistor (7), and two ends of the sixth microstrip line (61) are connected with second open-circuit microstrip lines (62) in parallel.
6. The dual frequency power divider with different power splitting ratios according to claim 2, characterized in that the isolation resistor (7) has a resistance value of 30Ω.
7. The dual frequency power divider with different power splitting ratios of claim 1, wherein the dielectric substrate is Rogers 5880, the relative permittivity is 2.2, the substrate thickness is 0.508mm, and the loss tangent is 0.0009.
8. The dual frequency power divider with different power splitting ratios according to claim 1, characterized in that it is capable of achieving different power splitting at two specified frequencies, i.e. 1:1 equal power splitting at 2GHz and 1:2 unequal power splitting at 4 GHz.
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| CN202323124872.2U CN221282338U (en) | 2023-11-20 | 2023-11-20 | Dual-frequency power divider with different power distribution ratios |
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