CN220963823U - High-density airtight microwave interconnection assembly - Google Patents
High-density airtight microwave interconnection assembly Download PDFInfo
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- CN220963823U CN220963823U CN202322452279.4U CN202322452279U CN220963823U CN 220963823 U CN220963823 U CN 220963823U CN 202322452279 U CN202322452279 U CN 202322452279U CN 220963823 U CN220963823 U CN 220963823U
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Abstract
The utility model discloses a high-density airtight microwave interconnection component, which is applied to the technical field of microwave devices and comprises the following components: the connecting shell, a plurality of inner conductors, a plurality of first isolation insulating layers and a plurality of glass insulators; the connecting shell is provided with a plurality of through holes; the through hole is divided into a first through hole area and a second through hole area along the length direction; the diameter of the first through hole area is smaller than that of the second through hole area; the inner conductor penetrates through the through hole; the first isolation insulating layer is arranged along the circumferential direction of the first through hole area; the inner side of the first isolation insulating layer is fixedly connected with the inner conductor, and the outer side of the first isolation insulating layer is fixedly connected with the connecting shell; the glass insulator is arranged along the circumferential direction of the second through hole area; the inner side of the glass insulator is fixedly connected with the inner conductor, and the outer side of the glass insulator is fixedly connected with the connecting shell. The utility model solves the problems of low production yield, low reliability, complex product structure, low production efficiency and inapplicability to the production of large-diameter connecting shells in the prior art.
Description
Technical Field
The utility model relates to the technical field of microwave devices, in particular to a high-density airtight microwave interconnection component.
Background
The traditional multi-channel high-density airtight microwave interconnection assembly is formed by combining a plurality of single-core airtight products with a connecting shell in a welding mode. The plurality of single-core airtight products are sealed with the connection housing by melting solder by heating the connection housing, but this technique has the following drawbacks: 1. the heat insulation effect of the glass insulator in the single-core airtight product causes uneven heat expansion and cold contraction of the edge and the center of the connecting shell, the connecting shell is easy to deform in the welding process, the glass insulator is easy to crack, the production yield is low, and the glass insulator is not suitable for the production of large-diameter connecting shells; 2. in the welding process, the welding temperature is higher, the welding time is longer, the glass insulator is easy to fail, and the reliability is low; 3. sintering and then welding are carried out, so that the product structure is complex; 4. sintering and welding are performed firstly, the process is complex, and the production efficiency is low. Therefore, there is a need to provide a high density hermetic microwave interconnect assembly that solves the problems of low yield, low reliability, complex product structure, low production efficiency, and inapplicability to large diameter connection housing production in the prior art.
Disclosure of utility model
In view of the above, the present utility model is to provide a high-density airtight microwave interconnection assembly, which is used for solving the problems of low production yield, low reliability, complex product structure, low production efficiency and inapplicability to the production of large-diameter connection shells in the prior art.
In order to solve the technical problems, the utility model provides a high-density airtight microwave interconnection assembly, which comprises: the connecting shell, a plurality of inner conductors, a plurality of first isolation insulating layers and a plurality of glass insulators;
The connecting shell is provided with a plurality of through holes; the through hole is divided into a first through hole area and a second through hole area along the length direction; the diameter of the first through hole area is smaller than that of the second through hole area; the inner conductor penetrates through the through hole;
The first isolation insulating layer is arranged along the circumferential direction of the first through hole area; the inner side of the first isolation insulating layer is fixedly connected with the inner conductor, and the outer side of the first isolation insulating layer is fixedly connected with the connecting shell;
The glass insulator is arranged along the circumferential direction of the second through hole area; the inner side of the glass insulator is fixedly connected with the inner conductor, and the outer side of the glass insulator is fixedly connected with the connecting shell.
Optionally, a threaded locking port is arranged on the connecting shell along a direction parallel to the through hole; the threaded locking notch penetrates through the connecting shell.
Optionally, a plurality of screw locking openings are arranged on the connection housing along the circumferential direction.
Optionally, a key groove is arranged on the connection housing along a direction parallel to the through hole.
Optionally, the first via region and the second via region are coaxial.
Optionally, the inner side of the first isolation insulating layer is fixedly connected with the inner conductor through low-temperature glue, and the outer side is fixedly connected with the connection shell through low-temperature glue.
Optionally, the high-density hermetic-sealed microwave interconnect assembly further comprises: a plurality of outer housing screw caps;
The through holes are sequentially divided into a first through hole area, a second through hole area and a third through hole area along the length direction;
the outer shell spiral cover is arranged along the circumferential direction of the third through hole area; the inner side of the outer shell spiral cover is fixedly connected with the inner conductor, and the outer side of the outer shell spiral cover is fixedly connected with the connecting shell.
Optionally, when the outer case screw cap is a metal outer case screw cap, the method further comprises: a plurality of second isolation insulating layers;
The second isolation insulating layer is arranged along the circumferential direction of the metal shell body spiral cover; the inner side of the second isolation insulating layer is fixedly connected with the inner conductor, and the outer side of the second isolation insulating layer is fixedly connected with the metal shell body spiral cover.
Optionally, the third through hole region is provided with a first thread; the outer side of the outer shell spiral cover is provided with a second thread; the outer side of the outer shell body spiral cover is fixedly connected with the connecting shell body through the first threads and the second threads.
Optionally, the diameter of the third through hole region is larger than the diameter of the second through hole region.
The beneficial effects of the utility model are as follows:
1. the integrated glass sealing mode is adopted, the welding mode is cancelled, the influence in the welding process is reduced, meanwhile, the through holes are arranged to be through holes with two different diameters, the positions of the inner conductors are accurately fixed through the through hole areas with smaller diameters, so that the inner conductors are prevented from being offset due to excessive glass insulators during glass sealing, the yield is higher, the reliability is higher, and the integrated glass sealing device is suitable for large-size air sealing occasions.
2. By adopting an integrated glass sealing mode, only three parts of the shell, the inner conductor and the glass insulator are required to be connected, so that the product structure is simpler.
3. By adopting an integral glass sealing mode, only one sealing process of glass sealing is carried out, so that the production process is simple and the production efficiency is higher.
Drawings
In order to more clearly illustrate the embodiments of the present utility model or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present utility model, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
FIG. 1 is a partial cross-sectional view of a conventional single glass sintered component weld;
FIG. 2 is a conventional sealing flow chart;
FIG. 3 is a schematic cross-sectional view of a single-channel structure of a high-density hermetic-seal microwave interconnect assembly according to an embodiment of the present utility model;
FIG. 4 is a schematic structural view of a high density hermetic seal microwave interconnect assembly according to an embodiment of the present utility model;
FIG. 5 is a schematic diagram of a connection of a high density hermetic seal microwave interconnect assembly according to an embodiment of the present utility model;
FIG. 6 is a flow chart of a sealing process for a high density hermetic seal microwave interconnect assembly in accordance with an embodiment of the present utility model;
fig. 7 is a schematic structural diagram of an outer shell screw cap mold according to an embodiment of the present utility model;
Fig. 8 is a graph showing a change of sealing temperature with time according to an embodiment of the present utility model.
The reference numerals are explained as follows:
1-a connection housing; 2-solder; 3-a housing; 4-glass insulator; 5-an inner conductor; 6-a first isolation insulating layer; 7-an outer housing screw cap; 8-a second isolation insulating layer; 9-thread locking; 10-key groove; 11-the shell screw cap mold.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present utility model more apparent, the technical solutions of the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model, and it is apparent that the described embodiments are only some embodiments of the present utility model, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
The signal transmission line layout of quantum computation is in a vacuum environment, and the diameter of the connecting shell 1 is larger, so that the technical challenge of realizing 168 paths of high air tightness on the connecting shell 1 with the large-size diameter of 100mm is very great. Currently, conventional multi-channel high-density hermetic microwave interconnect assemblies (as shown in fig. 1) are mostly implemented by conventional packaging processes as shown in fig. 2: firstly, pressing and forming glass powder, and then discharging glue and vitrifying to form a glass insulator 4; cleaning and annealing the inner conductor 5 and the shell 3; then, assembling the glass insulator 4, the single inner conductor 5 and the single shell 3, and then performing glass sealing to form a single-core airtight product; then fixing a plurality of single-core airtight products and solder 2 into the connecting shell 1, and uniformly welding the solder together in a flowing way by heating the connecting shell 1 to realize sealing; finally, electroplating and checking are carried out.
However, by adopting the traditional mode of sintering before welding, on one hand, the product structure is complicated; on the other hand, the production efficiency is low due to the complex process. In addition, this welding method has a great disadvantage in the production of the large-diameter connection housing 1. In the welding process of the connecting shell 1 and the single-core insulator, the welding temperature is higher, when the size of the connecting shell 1 is larger, the heat insulation effect of the glass insulator 4 in the single-core airtight product is particularly remarkable, the uneven expansion caused by heat and contraction caused by cold of the edge and the center of the connecting shell 1 of the large-size product is more remarkable, the deformation and the uneven welding are easy to occur, the production yield is low, and the welding time is longer due to the higher welding temperature, the glass insulator 4 is easy to fail, and the reliability is low. Meanwhile, if the respective channels are modified by the second welding method, the effect of the first glass sealing of the peripheral channels is also affected, so that a channel is just repaired, and the problem occurs in the peripheral channels. Therefore, the traditional mode is suitable for products with small outline size and small channel number. When the number of channels is large, the problem that the individual channel inner conductors 5 (pins) are skewed and even the seal is not firm is very easy to occur, and the problem channels are difficult to maintain individually. The interconnection component currently applied to the superconducting quantum computer is a large-size high-density airtight microwave interconnection component with an outline diameter of 100mm-120mm and 168 channels. Therefore, the method cannot meet the production requirement of a high-density airtight microwave interconnection component for a quantum computer.
In view of these disadvantages, the embodiments of the present utility model provide a high-density hermetic-seal microwave interconnection assembly, which eliminates a welding process, adopts an integral glass sealing manner, integrates a plurality of inner conductors 5 on a connection housing 1 to transfer radio frequency performance through the connection housing 1, the inner conductors 5 and other parts, and simultaneously sets the through holes to have two through holes with different diameters, and precisely fixes the positions of the inner conductors 5 through the through hole regions with smaller diameters so as to prevent the inner conductors 5 from being deviated due to excessive glass insulators 4 during glass sealing, so that the production yield is higher, the reliability is higher, the product structure is simpler, the production efficiency is higher, and the assembly is suitable for large-diameter hermetic-seal occasions.
Referring to fig. 3 and fig. 4, fig. 3 is a schematic cross-sectional view of a single-channel structure of a high-density airtight microwave interconnection assembly according to an embodiment of the present utility model; fig. 4 is a schematic structural diagram of a high-density hermetic-seal microwave interconnection assembly according to an embodiment of the present utility model. The high density hermetic microwave interconnect assembly may include: a connection housing 1, a plurality of inner conductors 5, a plurality of first isolation insulating layers 6, and a plurality of glass insulators 4;
The connecting shell 1 is provided with a plurality of through holes; the through hole is divided into a first through hole area and a second through hole area along the length direction; the diameter of the first through hole area is smaller than that of the second through hole area; the inner conductor 5 penetrates through the through hole;
The first isolation insulating layer 6 is disposed along the circumferential direction of the first through-hole region; the inner side of the first isolation insulating layer 6 is fixedly connected with the inner conductor 5, and the outer side is fixedly connected with the connecting shell 1;
The glass insulator 4 is arranged along the circumferential direction of the second through hole region; the inner side of the glass insulator 4 is fixedly connected with the inner conductor 5, and the outer side is fixedly connected with the connecting shell 1.
The first isolation insulating layer 6 is provided in the second through hole region to avoid conduction between the inner conductor 5 and the connection housing 1.
The present embodiment is not limited to the specific kind of the connection housing 1, and for example, the connection housing 1 may be a copper connection housing 1 or a metal connection housing 1 such as an aluminum connection housing 1. The present embodiment is not limited to a specific size of the connection housing 1, for example, the thickness of the connection housing 1 may be 6mm to 15mm, and includes values of both ends; the diameter of the connection housing 1 may be 100mm-120mm and includes values of both ends.
The present embodiment is not limited to the specific number and specific arrangement of the inner conductors 5, and the specific number and specific arrangement of the inner conductors 5 may be determined according to actual needs. The present embodiment is not limited to a specific size of the inner conductor 5, for example, the length of the inner conductor 5 may be 7.5mm to 17.5mm, and includes values of both ends; the diameter of the inner conductor 5 may be 0.5mm-0.75mm and includes values at both ends.
The present embodiment is not limited to a specific number and specific arrangement of the through holes, as long as it is ensured that the number and arrangement of the through holes are consistent with those of the inner conductors 5.
The present embodiment is not limited to a specific number of the first isolation insulating layers 6 as long as it is ensured to coincide with the specific number of the inner conductors 5. The specific connection manner of the first insulating layer 6 and the inner conductor 5 and the connection housing 1 is not limited in this embodiment, as long as the first insulating layer 6 and the inner conductor 5 can be fixedly connected, the first insulating layer 6 and the connection housing 1 can be fixedly connected, for example, the inner side of the first insulating layer 6 and the inner conductor 5 can be fixedly connected by low-temperature glue, and the outer side and the connection housing 1 can be fixedly connected by low-temperature glue. The present embodiment is not limited to a specific kind of the first insulating layer 6 as long as insulation of the first insulating layer 6 is ensured, and for example, the first insulating layer 6 may be a polytetrafluoroethylene layer or a phenolic glass fiber layer. The present embodiment is not limited to a specific size of the first isolation insulating layer 6, for example, the inner diameter of the first isolation insulating layer 6 may be 0.5mm to 0.75mm, and includes values of both ends; the first isolation insulating layer 6 may have an outer diameter of 0.6mm to 0.85mm and include values of both ends; the length of the first isolation insulating layer 6 may be 2.2mm to 2.5mm and include values of both ends.
The present embodiment is not limited to a specific number of glass insulators 4 as long as it is ensured to coincide with the specific number of inner conductors 5. The present embodiment is not limited to the specific kind of the glass insulator 4, as long as insulation is ensured and sealing between the inner conductor 5 and the connection housing 1 can be achieved. The present embodiment is not limited to a specific size of the glass insulator 4, for example, the outer diameter of the glass insulator 4 may be 1.6mm to 2.0mm, and includes values of both ends; the inner diameter of the glass insulator 4 may be 0.5mm to 0.75mm and includes values of both ends; the length of the glass insulator 4 may be 1.6mm to 10mm and includes values at both ends.
Further, in order to ensure that the periphery of the inner conductor 5 can be sealed firmly, in this embodiment, the first through hole area and the second through hole area may be coaxial, so as to fix the inner conductor 5 at the center position of the through hole.
Further, in order to fix the interconnection components on both sides when the interconnection is performed by the high-density airtight microwave interconnection component, the connection housing 1 in this embodiment may be provided with a screw locking port 9 along a direction parallel to the through hole; a threaded locking port 9 extends through the connection housing 1. The present embodiment is not limited to a specific arrangement and a specific number of the screw locking openings 9, as long as the connection housing 1 is ensured to be capable of fixing the interconnection components on both sides, for example, a plurality of screw locking openings 9 may be provided in the circumferential direction. The specific position of the threaded locking notch 9 is not limited in this embodiment, and in order to avoid affecting the connection of the inner conductors 5 on both sides, the threaded locking notch 9 may be disposed in the peripheral area of the connection housing 1 far from the through hole.
Further, in order to achieve precise connection of the inner conductors 5 on both sides, the connection housing 1 in this embodiment may be provided with a key groove 10 along a direction parallel to the through hole. In this embodiment, the specific structure of the slot is not limited, and it is only required to ensure that the interconnection assembly can accurately position the inner conductors on both sides according to the key slot, so as to achieve accurate connection of the inner conductors. It should be noted that, as shown in fig. 5, the high-density airtight microwave interconnection assembly may be fastened and fixed by screw threads after the two sides of the high-density airtight microwave interconnection assembly and the inner conductor 5 are inserted and connected by the concave and convex surfaces of the key slot 10. The present embodiment is not limited to a specific arrangement and a specific number of the key grooves 10, as long as the inner conductors 5 on both sides can be ensured to be connected accurately, for example, a plurality of key grooves 10 may be provided on the connection housing 1; the key groove 10 is symmetrical about the center of the connection housing 1. The specific position of the key groove 10 is not limited in this embodiment, and in order to avoid affecting the connection of the inner conductors 5 on both sides, the key groove 10 may be provided in the outer peripheral area of the connection housing 1 away from the through hole in this embodiment.
Further, for dust prevention, the high-density hermetic-seal microwave interconnection assembly of the present embodiment may further include: a plurality of outer case screw caps 7; the through holes are sequentially divided into a first through hole area, a second through hole area and a third through hole area along the length direction; the outer housing screw cap 7 is provided along the circumferential direction of the third through hole region; the inner side of the outer shell spiral cover 7 is fixedly connected with the inner conductor 5, and the outer side is fixedly connected with the connecting shell 1. Before glass sealing, the connection housing 1, the inner conductor 5, the glass insulator 4, the first insulating isolation insulating layer mold and the outer housing screw cap mold 11 are assembled together in sequence; after the sealing is finished, the first insulating layer mold and the outer shell screw cap mold 11 are replaced by the first insulating layer and the outer shell screw cap 7. In this embodiment, the lower end of the inner conductor 5 can be fixed by the first insulating layer mold before sealing, and the upper end of the inner conductor 5 can be covered by the outer case cover mold 11, so that the inner conductor 5 can be prevented from being deviated during glass sealing.
The present embodiment is not limited to a specific number of the outer case screw caps 7 as long as it is ensured to be consistent with the specific number of the inner conductors 5. The specific connection mode of the outer housing screw cap 7 and the connection housing 1 is not limited in this embodiment, as long as the outer housing screw cap 7 and the connection housing 1 can be ensured to be fixedly connected, for example, the third through hole area may be provided with a first thread; the outer side of the outer housing screw cap 7 may be provided with a second screw thread; the outer side of the outer housing screw cap 7 and the connection housing 1 are fixedly connected by a first screw thread and a second screw thread. The embodiment is not limited to the specific type of the outer shell screw cap 7, for example, the outer shell screw cap 7 may be a metal outer shell screw cap 7 such as a copper outer shell screw cap 7 or an aluminum outer shell screw cap 7; or an insulating outer housing cap 7. The present embodiment is not limited to a specific size of the outer housing cap 7, for example, the inner diameter of the outer housing cap 7 may be 0.5mm to 0.75mm, and includes values of both ends; the outer diameter of the outer housing cap 7 may be 6mm-8mm and include values at both ends; the length of the outer housing screw cap 7 may be 2.2mm-2.5mm and includes values at both ends.
Further, when the outer housing cover 7 is a metal outer housing cover 7, the high density hermetic seal microwave interconnect assembly of the present embodiment may further include: a plurality of second isolation insulating layers 8; the second isolation insulating layer 8 is arranged along the circumferential direction of the metal outer shell spiral cover 7; the inner side of the second isolation insulating layer 8 is fixedly connected with the inner conductor 5, and the outer side is fixedly connected with the metal shell body spiral cover 7. The second isolation insulating layer 8 is provided to avoid conduction between the inner conductor 5 and the metal outer case. The specific connection mode of the second insulating layer 8 and the inner conductor 5 and the metal outer shell spiral cover 7 is not limited in this embodiment, as long as the second insulating layer 8 and the inner conductor 5 can be fixedly connected, the second insulating layer 8 and the metal outer shell spiral cover 7 can be fixedly connected, for example, the inner side of the second insulating layer 8 and the inner conductor 5 can be fixedly connected through low-temperature glue, and the outer side and the metal outer shell spiral cover 7 can be fixedly connected through low-temperature glue. The present embodiment is not limited to a specific kind of the second insulating layer 8 as long as insulation of the second insulating layer 8 is ensured, and for example, the second insulating layer 8 may be a polytetrafluoroethylene layer or a phenolic glass fiber layer. The present embodiment is not limited to a specific size of the second isolation insulating layer 8, for example, the inner diameter of the second isolation insulating layer 8 may be 0.5mm to 0.75mm, and includes values of both ends; the second isolation insulating layer 8 may have an outer diameter of 0.6mm to 0.85mm and include values of both ends; the second isolation insulating layer 8 may have a length of 2.2mm-2.5mm and includes values at both ends.
Further, in order to facilitate the placement of the glass insulator 4 into the through-hole when sealing the interconnect assembly, the diameter of the third through-hole region may be larger than the diameter of the second through-hole region in this embodiment.
In order to facilitate the understanding of the present utility model, a specific sealing process of the high-density hermetic-sealed microwave interconnection assembly provided by the present utility model is provided below. Referring to fig. 6, fig. 6 is a sealing flow chart of a high-density airtight microwave interconnection assembly according to an embodiment of the present utility model, the sealing flow chart includes:
1. Preparation of glass insulator 4: 7070 glass powder is adopted, and is subjected to glue discharging and vitrification at 600 ℃ after compression molding.
2. Vacuum annealing: copper connection housing 1 or aluminum connection housing 1 with a diameter of 100mm-120mm and 168 inner conductors 5 are used, all inner conductors 5 and connection housing 1 are cleaned by degreasing and annealed in a vacuum furnace at 1000 ℃.
3. And (3) assembling: the glass insulator 4 after the glue discharging and vitrification, 168 inner conductors 5 after the cleaning and annealing, the connecting shell 1, a high-temperature resistant insulating layer mold, an outer shell spiral cover mold 11 (four edge holes are glue discharging holes) as shown in fig. 7 are assembled and fixed together through a graphite mold.
Specifically, the inner conductor 5 is placed first in the installation process, then the first insulating layer mold is sleeved in the second through hole area with smaller diameter, then the glass insulator 4 is placed in the first through hole area, then the outer shell spiral cover mold 11 is sleeved, and finally the second insulating layer mold at the inner side of the outer shell spiral cover mold 11 is fixed.
Since the lower end of the inner conductor 5 is fixed by the first insulating layer mold before sealing and the upper end is fixed by the outer case screw cap mold 11 and the second insulating layer mold, the inner conductor 5 can be prevented from being deviated at the time of glass sealing.
4. Sealing: because the product has high density and large size, is sensitive to the sealing temperature, is easy to cause air leakage or crack, and needs to strictly control the heating or cooling rate, the assembled assembly is placed in equipment with nitrogen protection, and is sealed at high temperature according to the curve of the sealing temperature changing along with time as shown in figure 8; after the sealing is finished, replacing the insulating layer mould and the outer shell spiral cover mould 11 by the first insulating layer 6, the second insulating layer 8 and the outer shell spiral cover 7; wherein, first isolation insulating layer 6 and second isolation insulating layer 8 adopt polytetrafluoroethylene layer or phenolic glass fibre layer, and shell body spiral cover 7 adopts copper shell body spiral cover 7 or aluminium shell body spiral cover 7.
The large-size sealing connection shell 1 needs to be sealed in an integrated manner, but the large-size sealing connection shell 1 is sensitive to sealing temperature and is easy to cause air leakage or cracks. In the sealing process, the heating or cooling rate is also very high for the thermal shock of the sealed product, and the product is leaked after the sealing, so that the heating rate in the sealing process cannot exceed 10 ℃/min. In addition, the cooling rate of the existing furnace cooling is not controlled, and for large-size integrated sealing products, stress is easy to be removed completely, so that the annealing rate is required to be strictly controlled, and the cooling rate is not more than 1 ℃/min. The problem of cracks in the sealing process of the large-size glass sealing product can be successfully solved by optimizing the annealing temperature, so that the method is more suitable for large-diameter air sealing occasions.
5. Electroplating: and (3) carrying out gold plating treatment on the sealed assembly to prevent corrosion of the interconnection assembly.
6. And (3) checking: and (5) detecting the airtight performance of the electroplated assembly by using a helium mass spectrometer leak detector.
The high-density airtight microwave interconnection component provided by the embodiment of the utility model eliminates a welding procedure, integrates a plurality of inner conductors 5 on the connection shell 1 in an integral glass sealing manner so as to transfer radio frequency performance through the connection shell 1, the inner conductors 5 and other parts, simultaneously sets the through holes to be through holes with two different diameters, precisely fixes the positions of the inner conductors 5 through the through hole areas with smaller diameters so as to prevent the inner conductors 5 from being offset due to excessive glass insulators 4 during glass sealing, thereby ensuring higher production yield, higher reliability, simpler product structure and higher production efficiency, and can realize 168-core signal simultaneous transmission on the connection shell 1 with the diameter of 100mm-120 mm.
While the foregoing describes a high-density hermetic-seal microwave interconnect assembly provided by the present utility model in detail, those skilled in the art will appreciate that the present utility model is not limited to the specific embodiments and applications described herein, based on the concepts of the embodiments of the present utility model.
Claims (10)
1. A high density hermetic microwave interconnect assembly, comprising: the connecting shell, a plurality of inner conductors, a plurality of first isolation insulating layers and a plurality of glass insulators;
The connecting shell is provided with a plurality of through holes; the through hole is divided into a first through hole area and a second through hole area along the length direction; the diameter of the first through hole area is smaller than that of the second through hole area; the inner conductor penetrates through the through hole;
The first isolation insulating layer is arranged along the circumferential direction of the first through hole area; the inner side of the first isolation insulating layer is fixedly connected with the inner conductor, and the outer side of the first isolation insulating layer is fixedly connected with the connecting shell;
The glass insulator is arranged along the circumferential direction of the second through hole area; the inner side of the glass insulator is fixedly connected with the inner conductor, and the outer side of the glass insulator is fixedly connected with the connecting shell.
2. The high density hermetic seal microwave interconnect assembly according to claim 1, wherein the connection housing is provided with a threaded locking notch in a direction parallel to the through-hole; the threaded locking notch penetrates through the connecting shell.
3. The high density hermetic seal microwave interconnect assembly according to claim 2, wherein a plurality of the screw lock openings are provided on the connection housing in a circumferential direction.
4. The high density hermetic seal microwave interconnect assembly according to claim 2, wherein the connection housing is provided with a key slot in a direction parallel to the through-hole.
5. The high density hermetic seal microwave interconnect assembly according to claim 1, wherein the first via area and the second via area are coaxial.
6. The high density hermetic seal microwave interconnect assembly according to claim 1, wherein the inner side of the first isolation insulating layer and the inner conductor are fixedly connected by a low temperature glue, and the outer side and the connection housing are fixedly connected by a low temperature glue.
7. The high density hermetic seal microwave interconnect assembly according to any one of claims 1 to 6, further comprising: a plurality of outer housing screw caps;
The through holes are sequentially divided into a first through hole area, a second through hole area and a third through hole area along the length direction;
the outer shell spiral cover is arranged along the circumferential direction of the third through hole area; the inner side of the outer shell spiral cover is fixedly connected with the inner conductor, and the outer side of the outer shell spiral cover is fixedly connected with the connecting shell.
8. The high density hermetic seal microwave interconnect assembly according to claim 7, wherein when the outer housing screw cap is a metal outer housing screw cap, further comprising: a plurality of second isolation insulating layers;
The second isolation insulating layer is arranged along the circumferential direction of the metal shell body spiral cover; the inner side of the second isolation insulating layer is fixedly connected with the inner conductor, and the outer side of the second isolation insulating layer is fixedly connected with the metal shell body spiral cover.
9. The high density hermetic seal microwave interconnect assembly according to claim 7, wherein the third through-hole region is provided with a first thread; the outer side of the outer shell spiral cover is provided with a second thread; the outer side of the outer shell body spiral cover is fixedly connected with the connecting shell body through the first threads and the second threads.
10. The high density hermetic seal microwave interconnect assembly according to claim 7, wherein the diameter of the third via area is greater than the diameter of the second via area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322452279.4U CN220963823U (en) | 2023-09-11 | 2023-09-11 | High-density airtight microwave interconnection assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322452279.4U CN220963823U (en) | 2023-09-11 | 2023-09-11 | High-density airtight microwave interconnection assembly |
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| Publication Number | Publication Date |
|---|---|
| CN220963823U true CN220963823U (en) | 2024-05-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202322452279.4U Active CN220963823U (en) | 2023-09-11 | 2023-09-11 | High-density airtight microwave interconnection assembly |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220963823U (en) |
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2023
- 2023-09-11 CN CN202322452279.4U patent/CN220963823U/en active Active
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