CN220753459U - Transparent conductive layer for LED chip and LED chip - Google Patents
Transparent conductive layer for LED chip and LED chip Download PDFInfo
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- CN220753459U CN220753459U CN202322442198.6U CN202322442198U CN220753459U CN 220753459 U CN220753459 U CN 220753459U CN 202322442198 U CN202322442198 U CN 202322442198U CN 220753459 U CN220753459 U CN 220753459U
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 7
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 230000000694 effects Effects 0.000 abstract description 7
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 121
- 230000006872 improvement Effects 0.000 description 8
- 239000013077 target material Substances 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 3
- 230000007480 spreading Effects 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 231100000331 toxic Toxicity 0.000 description 3
- 230000002588 toxic effect Effects 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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Abstract
The utility model discloses a transparent conducting layer for an LED chip and the LED chip, and relates to the technical field of photoelectron manufacturing. The transparent conductive layer for the LED chip is arranged on an epitaxial structure of the LED chip, and the epitaxial structure comprises a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer which are sequentially stacked; the transparent conductive layer is laminated on the P-type semiconductor layer; the transparent conductive layer comprises a first ITO layer, an Ag metal layer and a second ITO layer which are sequentially laminated on the P-type semiconductor layer; wherein the thickness of the first ITO layerThickness of the Ag metal layerThe transparent conductive layer has better conductive performance and strong current expansion effect. And the electrode breakdown is not caused, and the light efficiency is not reduced due to the reflection of light by the transparent conductive layer.
Description
Technical Field
The utility model relates to the technical field of photoelectron manufacturing, in particular to a transparent conducting layer for an LED chip and the LED chip.
Background
In recent years, high-power and high-power gallium nitride (GaN) -based blue Light Emitting Diodes (LEDs) have been greatly developed, and are widely applied to the fields of night scene decoration, traffic signal lamp indication, indoor illumination, automobile illumination, large-screen full-color display, mobile phone backlight and the like. In order to further improve the performance of LEDs, a number of problems also need to be solved. Since the P-type GaN material has a low hole concentration, current spreading occurs, and to solve this problem, indium tin oxide (Sn-doped In) is currently used In the industry 2 O 3 ITO) as a current spreading layer. The ITO transparent conductive film is a wide-energy-gap semiconductor material, has an energy gap value of about 3.5-4.3 eV, has good penetrability and good conductivity in a visible light range, and has a refractive index of 1.8-2.1. However, the ITO film used in the current LED has several problems: firstly, ITO films generally have excellent transmittance and conductivity properties at thicknesses on the order of microns, but the micro-scale element indium is expensive and toxic. Thus, the ITO film commonly used is generallyAbout, the conductivity is relatively poor, and LEDs applied in some special situations (such as high voltage) cannot be satisfied.
Disclosure of Invention
The utility model aims to solve the technical problem of providing a transparent conductive layer for an LED chip, which has strong conductive performance and can better realize current expansion.
The utility model also solves the technical problem of providing an LED chip.
In order to solve the technical problems, the utility model provides a transparent conductive layer for an LED chip, which is arranged on an epitaxial structure of the LED chip, wherein the epitaxial structure comprises a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer which are sequentially laminated; the transparent conductive layer is laminated on the P-type semiconductor layer; the transparent conductive layer comprises a first ITO layer, an Ag metal layer and a second ITO layer which are sequentially laminated on the P-type semiconductor layer;
wherein the thickness of the first ITO layerThe thickness of the Ag metal layer>
As an improvement of the technical proposal, the thickness of the Ag metal layer is
As an improvement of the technical proposal, the thickness of the Ag metal layer is
As an improvement of the above technical solution, the thickness of the first ITO layer is greater than the thickness of the second ITO layer.
As an improvement of the technical scheme, the thickness of the first ITO layer is 1.2-1.8 times of the thickness of the second ITO layer.
As an improvement of the technical scheme, the thickness of the first ITO layer is 1.3-1.5 times of the thickness of the second ITO layer.
As an improvement of the technical proposal, the transparent conductive materialTotal thickness of layer
As an improvement of the technical proposal, the thickness of the first ITO layer isThe thickness of the second ITO layer is +.>
As an improvement of the technical scheme, the first ITO layer, the Ag metal layer and the second ITO layer are prepared through a magnetron sputtering method.
Correspondingly, the utility model also discloses an LED chip, which comprises the transparent conductive layer for the LED chip.
The implementation of the utility model has the following beneficial effects:
the transparent conductive layer for the LED chip comprises a first ITO layer, an Ag metal layer and a second ITO layer which are sequentially laminated; by introducing the Ag metal layer, the overall conductivity of the transparent conductive layer can be effectively improved, so that the current expansion effect is better, the overall thickness of the transparent conductive layer can be reduced, the cost is reduced, and the use of toxic materials is reduced. In addition, by controlling the thickness of the first ITO layerThe Ag can be effectively prevented from being transited into the P-type semiconductor layer below, and the breakdown of the electrode is avoided. By controlling the thickness of the Ag metal layer>The formation of an integral reflective layer can be avoided, reflecting light emitted by the active layer.
Drawings
FIG. 1 is a schematic diagram of an LED chip according to an embodiment of the present utility model;
fig. 2 is a schematic structural diagram of a transparent conductive layer according to an embodiment of the utility model.
Detailed Description
The present utility model will be described in further detail with reference to the accompanying drawings, for the purpose of making the objects, technical solutions and advantages of the present utility model more apparent. It is only stated that the terms of orientation such as up, down, left, right, front, back, inner, outer, etc. used in this document or the imminent present utility model, are used only with reference to the drawings of the present utility model, and are not meant to be limiting in any way.
Referring to fig. 1 and 2, an embodiment of the present utility model provides a transparent conductive layer for an LED chip, which is disposed on an epitaxial structure of the LED chip. The epitaxial structure 10 includes a substrate 11, an N-type semiconductor layer 12, an active layer 13, and a P-type semiconductor layer 14, and a transparent conductive layer 20 is disposed on the P-type semiconductor layer 14. Specifically, the transparent conductive layer 20 includes a first ITO layer 21, an Ag metal layer 22, and a second ITO layer 23 sequentially stacked on the P-type semiconductor layer 14. Among them, the introduction of the Ag metal layer 22 can effectively enhance the conductivity of the entire transparent conductive layer 20. However, since Ag has a certain reflection effect on visible light, one of them controls the thickness of the Ag metal layer 22At this thickness, the Ag metal layer 22 does not form a dense mirror structure, and can transmit light; the first ITO layer 21 and the second ITO layer 23 with high refractive index are introduced at the two sides of the transparent conductive layer to weaken adverse effects caused by reflection, so that the transparent conductive layer 20 is ensured to have high transmittance in the visible light region, and further the use requirements of various LED chips are met. Furthermore, based on the above-described structure, the thickness of the entire transparent conductive layer 20 can be controlled to +.>The amount of In used is effectively reduced as follows.
Wherein the thickness of the first ITO layer 21By such control, ag in the Ag metal layer 22 is effectively prevented from transiting into the P-type semiconductor layer 14, and the electrode is broken down. In the prior art, there is also a method In which Ag and Sn are doped with In together 2 O 3 As a solution of the transparent conductive layer, however, ag in the transparent conductive layer inevitably diffuses into the P-type semiconductor layer 14, resulting in a problem of electrode breakdown. According to the technical scheme, the first ITO layer 21, the Ag metal layer 22 and the second ITO layer 23 are used as an interlayer, and the thickness of the first ITO layer 21 is controlled, so that the problem of adverse effect caused by Ag diffusion is effectively solved.
Wherein the Ag metal layer 22 has a thickness ofIf it is->The effect of improving the conductive performance of the transparent conductive layer 20 is weak. If it is->The Ag metal layer 22 forms a dense final layer, the reflectance increases, and the transmittance decreases greatly. Exemplary, the thickness of the Ag metal layer 22 is +.> Or->But is not limited thereto. Preferably +.>More preferably +.>
Wherein, the thickness of the first ITO layer 21 > the thickness of the second ITO layer 23, one of which can promote light transmittance, both of which can better block transition of Ag in the Ag metal layer 22. Preferably, the thickness of the first ITO layer 21 is 1.2 to 1.8 times, and exemplary is 1.3 times, 1.4 times, 1.5 times, or 1.6 times, the thickness of the second ITO layer 23, but is not limited thereto. More preferably, the thickness of the first ITO layer 21 is 1.3 to 1.5 times the thickness of the second ITO layer 23.
More specifically, in one embodiment, the first ITO layer 21 has a thickness ofExemplary areOr->But is not limited thereto. The thickness of the second ITO layer 23 is +.>Exemplary is->Or->But is not limited thereto.
Among them, the first ITO layer 21, the Ag metal layer 22, and the second ITO layer 23 may be prepared by a magnetron sputtering method, a vacuum evaporation method, and a metal organic chemical vapor deposition method, but are not limited thereto. Preferably, in one embodiment, the first ITO layer 21, the Ag metal layer 22, and the second ITO layer 23 are prepared by a magnetron sputtering method, and the growth principle is that excited Ar ions fly to the target material under the action of an electric field, bombard the surface of the target material with high energy, so that the target material is sputtered, and neutral particles in sputtered particles are deposited on a wafer to form a film. The layers are prepared by a magnetron sputtering method, so that the layers are deposited in the form of particles, and particularly, the Ag metal layer 22 is deposited in the form of Ag particles, thereby improving the visible light transmittance.
Specifically, in one embodiment, the transparent conductive layer 20 is prepared as follows:
(1) Providing an epitaxial structure;
(2) Loading the epitaxial structure into a magnetron sputtering machine, and adjusting the cavity pressure of the machine to 4-8X 10 -3 Pa, the temperature of the cavity of the machine is set to 300-450 ℃.
(3) Firstly introducing Ar to clean the surface of the target, controlling the flow rate of the Ar introduced into the gas path to be 25-75sccm, and then introducing O 2 O introduced into the gas path 2 Controlling the flow to be 0.1-1sccm, adding 120-500W power to the indium tin target material, depositing a first ITO layer, and the deposition rate is
(4) Stop of charging O 2 Replacing an Ag target material and depositing an Ag metal layer; the power added to the Ag target is 50-200W, and the deposition rate is
(5) Changing indium tin target material, introducing O 2 ，O 2 Controlling the flow rate to be 0.1-0.4sccm, applying 80-180W power to the indium tin target material, depositing a second ITO layer with a deposition rate of
(6) At N 2 The annealing is completed in the environment of the furnace tube, the temperature of the furnace tube is controlled to be 500-650 ℃ and the time is 20-40min. Internal stress of the transparent conductive layer can be reduced by annealing, grain boundary scattering of carriers is reduced, and conductivity is improved. In addition, annealing can promote the growth and recrystallization of crystal grains, so that gaps between adjacent Ag ions of the Ag metal layer 22 are enlarged, and the visible light transmittance is improved.
Accordingly, in another embodiment of the present utility model, an LED chip is also disclosed, which includes the transparent conductive layer 20, which may be a front-loading structure, a vertical structure or a flip-chip structure, but is not limited thereto. A positive mounting structure is preferred, and referring to fig. 1, it includes an epitaxial structure 10, a transparent conductive layer 20, an N electrode 30, and a P electrode 40. The epitaxial structure 10 includes a substrate 11, an N-type semiconductor layer 12, an active layer 13, and a P-type semiconductor layer 14, which are sequentially stacked. Wherein the transparent conductive layer 20 is disposed between the P electrode 40 and the P-type semiconductor layer 14. The N electrode 30 is connected to the N-type semiconductor layer 12 through a hole penetrating to the N-type semiconductor layer 12.
In summary, the transparent conductive layer 20 for the LED chip of the present utility model not only effectively improves the overall conductivity of the transparent conductive layer by the interlayer scheme of the first ITO layer 21, the Ag metal layer 22, and the second ITO layer 23, and the control of the thickness of the first ITO layer 21 and the Ag metal layer 22, so that the current spreading effect is better, and further the overall thickness of the transparent conductive layer can be reduced, the cost is reduced, and the use of toxic materials is reduced. And the problem of electrode breakdown caused by Ag diffusion is solved, and the problem of light transmittance reduction caused by Ag introduction is solved.
While the foregoing is directed to the preferred embodiments of the present utility model, it will be appreciated by those skilled in the art that changes and modifications may be made without departing from the principles of the utility model, such changes and modifications are also intended to be within the scope of the utility model.
Claims (10)
1. A transparent conductive layer for an LED chip, which is disposed on an epitaxial structure of the LED chip, the epitaxial structure comprising a substrate, an N-type semiconductor layer, an active layer, and a P-type semiconductor layer, which are sequentially stacked; the transparent conductive layer is laminated on the P-type semiconductor layer; the transparent conductive layer comprises a first ITO layer, an Ag metal layer and a second ITO layer which are sequentially laminated on the P-type semiconductor layer;
wherein the saidSaid->
2. The transparent conductive layer for an LED chip as set forth in claim 1, wherein the thickness of the Ag metal layerIs that
3. The transparent conductive layer for an LED chip according to claim 1 or 2, wherein the Ag metal layer has a thickness of
4. The transparent conductive layer for an LED chip of claim 1, wherein the thickness of said first ITO layer is greater than the thickness of said second ITO layer.
5. The transparent conductive layer for an LED chip according to claim 1 or 4, wherein the thickness of the first ITO layer is 1.2 to 1.8 times the thickness of the second ITO layer.
6. The transparent conductive layer for an LED chip according to claim 1 or 4, wherein the thickness of the first ITO layer is 1.3 to 1.5 times the thickness of the second ITO layer.
7. The transparent conductive layer for an LED chip of claim 1, wherein said
8. The transparent conductive layer for an LED chip of claim 1, wherein said first ITO layer has a thickness ofThe thickness of the second ITO layer is/>
9. The transparent conductive layer for an LED chip of claim 1, wherein said first ITO layer, ag metal layer, and second ITO layer are prepared by a magnetron sputtering method.
10. An LED chip comprising the transparent conductive layer for an LED chip according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322442198.6U CN220753459U (en) | 2023-09-08 | 2023-09-08 | Transparent conductive layer for LED chip and LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322442198.6U CN220753459U (en) | 2023-09-08 | 2023-09-08 | Transparent conductive layer for LED chip and LED chip |
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| Publication Number | Publication Date |
|---|---|
| CN220753459U true CN220753459U (en) | 2024-04-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202322442198.6U Active CN220753459U (en) | 2023-09-08 | 2023-09-08 | Transparent conductive layer for LED chip and LED chip |
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| Country | Link |
|---|---|
| CN (1) | CN220753459U (en) |
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2023
- 2023-09-08 CN CN202322442198.6U patent/CN220753459U/en active Active
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