CN220733100U - Semiconductor power device for optical storage and charging integrated charging station - Google Patents
Semiconductor power device for optical storage and charging integrated charging station Download PDFInfo
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- CN220733100U CN220733100U CN202322192219.3U CN202322192219U CN220733100U CN 220733100 U CN220733100 U CN 220733100U CN 202322192219 U CN202322192219 U CN 202322192219U CN 220733100 U CN220733100 U CN 220733100U
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- 230000001681 protective effect Effects 0.000 claims abstract description 7
- 239000003990 capacitor Substances 0.000 claims description 22
- 230000000087 stabilizing effect Effects 0.000 claims description 12
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- 238000003466 welding Methods 0.000 abstract description 3
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- 238000004146 energy storage Methods 0.000 description 6
- 230000000295 complement effect Effects 0.000 description 5
- 238000002955 isolation Methods 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000010349 pulsation Effects 0.000 description 3
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- 238000012423 maintenance Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
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Abstract
The utility model discloses a semiconductor power device for an optical storage and charging integrated charging station, which is applied to the field of power units and comprises a power module, a control communication module, a driving module, an auxiliary and display module and a PCB board, and is characterized in that the power module, the control communication module, the driving module, the auxiliary and display module are all installed with the PCB board, and a positive output port, a protective ground port and a negative output port are also installed at the bottom of the PCB board; according to the utility model, a single power module and communication, control, driving, display and other functional modules are combined together according to the light storage and charging integrated requirement, so that the number of wiring and welding spots on a plurality of traditional PCB boards is reduced, the volume is reduced, the light storage and charging integrated charging station system is better suitable, and the light weight requirement is met.
Description
Technical Field
The utility model relates to the field of power units, in particular to a semiconductor power device for an optical storage and charging integrated charging station.
Background
The light storage and charging integrated charging station consists of three systems, namely photovoltaic power generation, battery energy storage and charging and discharging, and is connected to a public power grid together. The voltage of each system is different from the electric energy form, and a conversion device such as a photovoltaic inverter, an energy storage converter, a charging pile and the like is needed to freely convert direct current electric energy and alternating current electric energy. The DC transformer is used as an important electric energy conversion device, the conversion from one DC voltage to another direct voltage or more direct voltages in direct proportion to the DC voltage is realized through high-frequency chopping, transformer isolation and high-frequency rectification, and the DC transformer can be used for occasions such as power transmission, voltage detection and the like in an optical storage and charge integrated charging station, wherein a device for specifically completing electric energy conversion and electric energy storage is a semiconductor power unit, and the device is a core part of the DC transformer.
At present, most semiconductor power unit function modules are fewer, and often comprise a power module, a power module and a driving module, and other related function modules are positioned at other unit positions of the direct-current transformer and are connected through data wires and the like, so that the whole occupied volume is larger.
Meanwhile, in the prior art, most of current manufacturers adopt IGBT modules as power devices to finish conversion of electric energy from direct current to alternating current. The power module main circuit usually adopts a half-bridge structure, and is characterized by fewer devices and lower cost. In order to increase the output range of the direct-current voltage, the main circuit can adopt a full-bridge structure, but the defects of more devices, higher cost and larger voltage fluctuation at the direct-current side are overcome.
In order to solve the above-mentioned problems, we propose a semiconductor power device for an integrated charging station for optical storage and charging.
Disclosure of Invention
The utility model aims to provide a semiconductor power device for an optical storage and charging integrated charging station, which has the advantages of small volume, small loss and low cost.
The technical aim of the utility model is realized by the following technical scheme: the utility model provides a semiconductor power device towards light stores up integration charging station, includes power module, control communication module, drive module, assistance and display module and PCB board, its characterized in that, power module, control communication module, drive module, assistance and display module all install with the PCB board, positive output port, protectively ground port and negative output port are still installed to the bottom of PCB board.
By adopting the technical scheme, after the integrated power module, the control communication module, the driving module, the auxiliary and display module and the PCB are installed, the size, the loss and the cost can be reduced.
The utility model is further provided with: the power module comprises a chip resistor, a high-power discrete IGBT, an IGBT radiator, a cement resistor, a MOSFE and a filter capacitor.
By adopting the technical scheme, through the setting of the power module, the power module is used for directly participating in completing the electric energy conversion of the bottommost layer, and the chip resistor, the high-power discrete IGBT, the IGBT radiator, the cement resistor, the MOSFE and the filter capacitor of the power module form a full-bridge main circuit, and the full-bridge main circuit is respectively connected with the driving module, the positive output port, the protective ground port and the negative output port.
The utility model is further provided with: the control communication module comprises a W7500x microcontroller and an optical fiber interface.
By adopting the technical scheme, the control communication module is arranged for receiving the DSP signal of the upper computer by the switch.
The utility model is further provided with: the driving module comprises a driving circuit, and the driving circuit consists of a front-end circuit, a gating circuit and a terminal circuit.
By adopting the technical scheme, the driving module is arranged, and the driving circuit is used for receiving the DSP driving signal and the FPGA driving signal of the upper computer; the front-end circuit of the driving circuit is used for receiving signals and processing the signals into two complementary pairs of PWM signals;
the gating circuit is used for selecting corresponding signal sources in different states;
the terminal circuit is used for isolating and amplifying the driving signal;
the whole circuit is divided into two states according to different signal sources: an operational state and a non-operational state;
in the running state, receiving a driving signal of the FPGA through an optical fiber interface;
and in the non-running state, the drive signal of the DSP is received through the switch.
The utility model is further provided with: the auxiliary and display module comprises an LED nixie tube, a display screen, a 220V terminal strip, an auxiliary power supply and a voltage stabilizing tube.
By adopting the technical scheme, the auxiliary and display module is used for receiving the driving signal of the W7500x microcontroller and displaying on the LED nixie tube and the display screen according to the response instruction through the arrangement of the auxiliary and display module.
In summary, the utility model has the following beneficial effects:
1. according to the utility model, a single power module and communication, control, driving, display and other functional modules are combined together according to the light storage and charging integrated requirement, so that the number of wiring and welding spots on a plurality of traditional PCB boards is reduced, the volume is reduced, the light storage and charging integrated charging station system is better suitable, and the light weight requirement is met;
2. the utility model adopts a high-power discrete IGBT, a W7500x microcontroller and an auxiliary power supply with the model of HIECUBE, and a voltage stabilizing tube, thereby reducing switching loss, application loss and power loss from the performance of the device;
by selecting a filter capacitor with proper size, the ripple influence of direct-current voltage is reduced, so that the main circuit has good rectifying effect and stable waveform, and the effects of small output current pulsation and high power factor can be realized by using the single-phase bridge type full-control rectifying circuit, and the running cost is reduced;
the drive circuit is designed to send out a signal which enables the IGBT in the power module to be matched orderly and efficiently, and the drive circuit is used for controlling the on and off of the IGBT, monitoring the fault of the IGBT, protecting the normal operation of the power module element, reducing the fault loss and reducing the maintenance cost.
Drawings
FIG. 1 is a schematic diagram of the structure of the present utility model;
FIG. 2 is a schematic view of the location of the components of the present utility model;
FIG. 3 is a topology of a full bridge rectifier circuit according to the present utility model;
FIG. 4 is a front-end circuit topology of the present utility model;
FIG. 5 is a circuit topology of the gating circuit of the present utility model;
fig. 6 is a circuit topology of a terminal of the present utility model.
Reference numerals: 1. an LED nixie tube; 2. a display screen; 3. 220V terminal block; 4. an auxiliary power supply; 5. a chip resistor; 6. high-power discrete IGBT; 7. IGBT radiator; 8. cement resistance; 9. a filter capacitor; 10. w7500x microcontroller; 11. a voltage stabilizing tube; 12. a driving circuit; 13. an optical fiber interface; 14. mosfets; 15. a power module; 16. a control communication module; 17. a driving module; 18. an auxiliary and display module; 19. PCB board; 20. a positive output port; 21. a protected ground port; 22. a negative output port.
Detailed Description
The present utility model will be described in further detail with reference to the accompanying drawings.
Example 1:
referring to fig. 1, 2 and 3, a semiconductor power device facing an optical storage and charging integrated charging station comprises a power module 15, a control communication module 16, a driving module 17, an auxiliary and display module 18 and a PCB board 19, wherein the power module 15, the control communication module 16, the driving module 17 and the auxiliary and display module 18 are all installed with the PCB board 19, and a positive output port 20, a protective ground port 21 and a negative output port 22 are also installed at the bottom of the PCB board 19; according to the light storage and charging integrated requirement, a single power module is combined with communication, control, driving, display and other functional modules, so that the number of wiring and welding spots on a plurality of traditional PCB boards is reduced, the volume is reduced, the light storage and charging integrated charging station system is better suitable for the light storage and charging integrated charging station system, and the light weight requirement is met; by adopting a high-power discrete IGBT, a W7500x microcontroller and an auxiliary power supply with the model of HIECUBE and a voltage stabilizing tube, the switching loss, the application loss and the power supply loss are reduced from the performance of the device; by selecting a filter capacitor with proper size, the ripple influence of direct-current voltage is reduced, so that the main circuit has good rectifying effect and stable waveform, and the effects of small output current pulsation and high power factor can be realized by using the single-phase bridge type full-control rectifying circuit, and the running cost is reduced; the drive circuit is designed to send out a signal which enables the IGBT in the power module to be matched orderly and efficiently, and the drive circuit is used for controlling the on and off of the IGBT, monitoring the fault of the IGBT, protecting the normal operation of the power module element, reducing the fault loss and reducing the maintenance cost.
Further, the power module 15 includes a chip resistor 5, a high-power discrete IGBT6, an IGBT radiator 7, a cement resistor 8, a mosfet 14, and a filter capacitor 9, and through the arrangement of the power module 15, the power module 15 is configured to directly participate in completing the electric energy conversion of the bottommost layer, and the chip resistor 5, the high-power discrete IGBT6, the IGBT radiator 7, the cement resistor 8, the mosfet 14, and the filter capacitor 9 of the power module 15 form a full-bridge main circuit, which is respectively connected to the driving module 17, the positive output port 20, the protective ground port 21, and the negative output port 22;
specifically, in the single power module 15, the number of the high-power discrete IGBTs 6 is four, and the number of the filter capacitors 9 is five; the high-power discrete IGBT6 has the advantages of high input impedance and low conduction voltage drop, is suitable for being applied to a converter system with the direct-current voltage of 600V or more, and can reduce switching loss and operation cost in a full-bridge main circuit;
(6) Taking U because the voltage rating of (2) to (3) times margin is left Tn =200v; the current quota considers the average value of the maximum power frequency sine half-wave current flowing at 40 ℃ so as to obtain I T(AV) =85a; the switching frequency is 10kHz;
the filter capacitor 9 considers that the ripple amplitude of the dc voltage is within an acceptable range, so take C > =0.796 mF;
referring to fig. 3, Q1, Q2, Q3, and Q4 are all high-power discrete IGBTs 6, with collector at C-terminal, gate at G-terminal, and emitter at E-terminal;
each full-bridge main circuit comprises four power electronic switches and five filter capacitors 9; the D end of the MOSFE14 is a drain electrode, the G end is a grid electrode, and the S end is a source electrode;
each power electronic switch is formed by connecting a high-power discrete IGBT6 and a chip resistor 5 in parallel;
the collector electrode of Q1 is connected with an input power supply, the grid electrode is connected with one path of driving signal of the driving circuit 12, and the emitter electrode is connected with the positive output port 20;
the collector electrode of the Q2 is connected with an input power supply, the grid electrode is connected with one path of driving signals of the other driving circuit 12, and the emitter electrode is connected with a negative output port;
the collector electrode of Q3 is connected with the positive output port 20, the grid electrode is connected with the other path of driving signal of the driving circuit 12, and the emitter electrode is connected with the protection ground port;
the collector electrode of Q4 is connected with the negative output port, the grid electrode is connected with another driving signal of another driving circuit 12, and the emitter electrode is connected with the protective ground port 21; the IGBT radiator 7 is in direct contact with the surfaces of the four high-power discrete IGBTs 6;
the anodes of the five filter capacitors 9 are connected in parallel with the collectors of the Q1 and the Q2, and the cathodes of the five filter capacitors 9 are connected in parallel with the protective ground port 21;
the drain electrode of the MOSFE14 is connected with the auxiliary and display module 18 in series, the grid electrode is connected with the patch resistor 5 in series, the source electrode is connected with the protection ground port 21, and the cement resistor 8 is used for releasing the capacitor voltage at the direct current side when the optical storage and charging integrated charging station platform is completely closed;
the input or the withdrawal of the power module capacitor can be controlled by controlling the on or off of the 4 power electronic switches, so that the bridge arm voltage and the bridge arm current are controlled, and the alternating current-direct current power conversion is realized; two high-power discrete IGBTs 6 are arranged in one conducting loop, and the conducting loop which is conducted by the high-power discrete IGBTs 6 at the same time can be used for effectively controlling the conduction, so that the use of a free-wheeling diode is avoided, and the phenomenon of runaway is avoided; meanwhile, the circuit has good rectifying effect and stable waveform, and the effects of small output current pulsation and high power factor can be realized by using the single-phase bridge type full-control rectifying circuit.
Further, the control communication module 16 includes a W7500x microcontroller 10 and an optical fiber interface 13, and the control communication module 16 is configured to receive DSP signals of the upper computer by the switch;
in this embodiment, the W7500x microcontroller 10 is connected to an upper computer through a switch; the number of the optical fiber interfaces 13 is two, and the optical fiber interfaces 13 are connected with the driving circuit 12; the W7500x microcontroller 10 is also respectively connected with a voltage stabilizing tube 11, an LED nixie tube 1, the W7500x microcontroller 10, a display screen 2 and a driving circuit 12;
the W7500x microcontroller 10 has a comprehensive power saving mode, allows low power consumption application programs to be designed, and can also reduce power consumption by slowing down a system clock so that a user can apply clock gating to peripheral devices when the clock is not in use;
the W7500x microcontroller 10 receives the DSP driving signal of the upper computer through the switch and transmits the DSP driving signal to the driving circuit 12 for establishing a communication channel between the serial device and the Ethernet switch, so that the semiconductor power unit can be networked, and the functions of remote monitoring and control are realized.
Further, the driving module 17 includes a driving circuit 12, the driving circuit 12 is composed of a front end circuit, a gating circuit and a terminal circuit, and the driving circuit 12 included in the driving module 17 is used for receiving a host computer DSP driving signal and an FPGA driving signal through the arrangement of the driving module 17;
in this embodiment, the input end of the driving circuit 12 receives the driving signal of the DSP when the platform state machine starts and stops, and receives the driving signal of the FPGA when the platform state machine starts and runs, and the output end is connected with the full-bridge main circuit, the positive output port 20 and the protection ground port 21;
the front-end circuit of the driving circuit 12 is used for receiving signals and processing the signals into two complementary pairs of PWM signals; the gating circuit is used for selecting corresponding signal sources in different states; the terminal circuit is used for isolating and amplifying the driving signal; the whole circuit is divided into two states according to different signal sources: an operational state and a non-operational state; in the running state, receiving a driving signal of the FPGA through the optical fiber interface 13; in the non-running state, receiving a driving signal of the DSP through the switch;
the whole circuit is divided into two states according to different signal sources: an operational state and a non-operational state. In the running state, receiving a driving signal of the FPGA through an optical fiber interface; in the non-running state, receiving a driving signal of the DSP through the switch;
taking the system operation state as an example, the working principle is as follows, please refer to fig. 4:
u1 is an optical fiber interface 13, U2 is a NOR gate, and U3 is an OR gate; the diode D1, the resistor R7 and the capacitor C7 form an RC circuit, and the diode D2, the resistor R8 and the capacitor C8 form an RC circuit; c6 is 0.1uF capacitance between the direct current power supply and the ground, and is used for filtering, so that low impedance is formed between the power line and the ground line, and the power supply is close to an ideal voltage source; the output end is a pair of complementary PWM signals PWMA1N and PWMA1P;
please refer to fig. 5: u4 is an AND OR gate, and U5 is a decoder; c9 and C10 are 0.1uF capacitances between dc power and ground; PWMA1N, PWMA1P, PWMA2N, PWMA2P is a driving signal from FPGA, PWMB1N, PWMB1P, PWMB2N, PWMB P is a driving signal from DSP, and PWM1N, PWM1P, PWM2N, PWM2P is a driving signal output by the gating circuit;
please refer to fig. 6, wherein U6 is a driver; a pair of driving signals PWM1N, PWM P output by the gating circuits are input; the resistor R9 and the resistor R10 are input resistors of a high-voltage side logic input end HIN and a low-voltage side logic input end LIN of the driver and are grounded through a capacitor C11 and a capacitor C12; c13 and C14 are 4.7uF capacitances between the low side power supply VDD and the ground terminals GND and PGND; the enable input and the fault indication output EN-/FLT are connected with a +5V power supply through a resistor R11 and connected with ground through a capacitor C15; the high-side positive power supply VB to the high-side negative power supply VS are high-side power supply voltages and are connected with a positive output port through a 4.7uF capacitor C16; diode D3 and resistor R13 are connected in series and then connected in parallel with resistor R12 to form an output resistor, diode D4 and resistor R14 are connected in series and then connected in parallel with resistor R15 to form an output resistor, high-side gate driver output HO sends out a gate driving signal of high-power discrete IGBT 6Q 1 through the output resistor, and low-side gate driver output LO sends out a gate driving signal of high-power discrete IGBT 6Q 3 through the output resistor; the unit is optimized for the high-power discrete IGBT6, and the parts designed for the high-power discrete IGBT6 have asymmetric under-voltage locking levels;
the front-end circuit receives signals from an FPGA in the upper computer through the optical fiber interface 13, utilizes a plurality of basic logic OR gates to perform signal processing, converts the input signals into digital signals, and considers that the high-power discrete IGBT6 is not an ideal switching element, so that an RC circuit is added in the front-end circuit during design, so that a pair of complementary high-power discrete IGBT6 switching tubes can switch states at the same time and maintain a state complementary relation; the signal output by the front-end circuit is input into the gating circuit, and the gating circuit selects FPGA driving signals by using the decoder and 4 AND OR gates and inputs the FPGA driving signals into the terminal circuit; the terminal circuit performs isolation amplification on the received driving signals, outputs the driving signals from a positive output port, transmits the driving signals into a grid electrode of the power module Q1 and a grid electrode of the power module Q3, and sends out signals which enable the high-power discrete IGBT6 in the power module to be orderly and efficiently matched, the signals are used for controlling the on and off of the high-power discrete IGBT6, monitoring faults of the high-power discrete IGBT6, protecting normal operation of power module elements, guaranteeing proper switching frequency, having stronger anti-interference capability, improving isolation capability of a power loop and a control loop, and reducing fault rate and switching loss of the power module.
Further, the auxiliary and display module 18 comprises an LED nixie tube 1, a display screen 2, a 220V terminal block 3, an auxiliary power supply 4 and a voltage stabilizing tube 11, and the auxiliary and display module 18 is used for receiving a driving signal of the W7500x microcontroller 10 through the arrangement of the auxiliary and display module 18, and displaying the driving signal on the LED nixie tube 1 and the display screen 2 according to a response instruction; in the embodiment, a voltage stabilizing tube 11 is connected with a driving circuit 12, the voltage stabilizing tube 11 is connected with a W7500x microcontroller 10, the voltage stabilizing tube 11 is connected with an LED nixie tube 1, the voltage stabilizing tube 11 is connected with a display screen 2 and is used for outputting direct current voltages with different magnitudes and providing different working power supplies for different modules of a semiconductor power unit;
the model 4 of the auxiliary power supply is HIECUBE, and the input voltage is as follows: 85V-265VAC/100V-370VDC, output voltage: 5-24V, has the advantages of dual-purpose AC and DC and wide input voltage range, and simultaneously has the characteristics of high reliability, low power consumption, safety isolation and the like; the type of the selected voltage regulator 11 is LMR14050, which can provide direct load current of up to 5A in a very small size, and has excellent efficiency and thermal performance; in the no-load and no-switch condition, the working current is 40 mu A; when the equipment is closed, the power supply current is generally 1 mu A; the LMR14050 enables constant frequency peak current mode control under light load to achieve high efficiency, and can also synchronize to an external clock in the frequency range of 250kHz to 2.3MHz, which allows the device to be optimized for higher frequency platelet space, or for efficient power conversion at lower frequencies.
The use process is briefly described: in the running state, the auxiliary power supply 4 supplies power to different modules through the voltage stabilizing tube 11; the control communication module 16 receives the DSP signal of the upper computer through the exchanger, and the W7500 chip sends driving signals to the driving module 17 and the auxiliary and display module 18 after processing;
the driving circuit 12 of the driving module 17 receives the upper computer DSP driving signal and the FPGA driving signal, and transmits the driving signal to the power module 15 after judging gating and isolating amplification;
the power module 15 performs electric energy conversion and electric energy storage through a full-bridge main circuit;
the auxiliary and display module 18 receives the W7500 chip driving signal and displays the signal on the LED nixie tube 1 and the display screen 2 according to the response instruction; when the operation is stopped, the auxiliary power supply 4 is turned off, and the cement resistor 8 of the power module 15 releases the capacitor voltage at the direct current side;
the single power of the device is 1000W, and the power is increased by connecting a plurality of semiconductor power units in series and parallel, so that the device is used for expanding capacity on conversion devices such as a photovoltaic inverter, an energy storage converter, a charging pile and the like, and realizing electric energy conversion and electric energy storage.
The present embodiment is only for explanation of the present utility model and is not to be construed as limiting the present utility model, and modifications to the present embodiment, which may not creatively contribute to the present utility model as required by those skilled in the art after reading the present specification, are all protected by patent laws within the scope of claims of the present utility model.
Claims (1)
1. The semiconductor power device for the light storage and charging integrated charging station comprises a power module (15), a control communication module (16), a driving module (17), an auxiliary and display module (18) and a PCB (printed circuit board) (19), and is characterized in that the power module (15), the control communication module (16), the driving module (17) and the auxiliary and display module (18) are all installed with the PCB (19), and a positive output port (20), a protective ground port (21) and a negative output port (22) are also installed at the bottom of the PCB (19);
the power module (15) comprises a chip resistor (5), a high-power discrete IGBT (6), an IGBT radiator (7), a cement resistor (8), a MOSFE (14) and a filter capacitor (9); the control communication module (16) comprises a W7500x microcontroller (10) and an optical fiber interface (13);
the driving module (17) comprises a driving circuit (12), and the driving circuit (12) consists of a front-end circuit, a gating circuit and a terminal circuit;
the auxiliary and display module (18) comprises an LED nixie tube (1), a display screen (2), a 220V terminal strip (3), an auxiliary power supply (4) and a voltage stabilizing tube (11).
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