CN220728456U - Air treatment equipment - Google Patents

Air treatment equipment Download PDF

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Publication number
CN220728456U
CN220728456U CN202322260273.7U CN202322260273U CN220728456U CN 220728456 U CN220728456 U CN 220728456U CN 202322260273 U CN202322260273 U CN 202322260273U CN 220728456 U CN220728456 U CN 220728456U
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electrode
plate
type semiconductor
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negative
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CN202322260273.7U
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柴方刚
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Qingdao Hisense Hitachi Air Conditioning System Co Ltd
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Qingdao Hisense Hitachi Air Conditioning System Co Ltd
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  • Disinfection, Sterilisation Or Deodorisation Of Air (AREA)

Abstract

The utility model discloses air treatment equipment, wherein an air duct is formed in a shell, a water ion generating device is arranged in the air duct and comprises an emission electrode, a high-voltage electrode, a refrigerating part and an insulating part, a high-voltage electric field is generated between the high-voltage electrode and the emission electrode to ionize water on the emission electrode into nanometer water ions, the refrigerating part is used for cooling the emission electrode and comprises a positive electrode part and a negative electrode part which are oppositely arranged, the positive electrode part is connected with an electronic type semiconductor, the negative electrode part is connected with a hole type semiconductor, the emission electrode is arranged at the butt joint of the electronic type semiconductor and the hole type semiconductor, and the insulating part is arranged between the high-voltage electrode and the refrigerating part and is used as an installation carrier of the high-voltage electrode and the refrigerating part. The water ion generating device can increase the refrigerating temperature difference, improve the cooling effect on the emitter electrode, improve the condensation capacity of the emitter electrode from the air, further reliably and stably generate nano water ions, and improve the air purifying effect.

Description

Air treatment equipment
Technical Field
The utility model relates to the technical field of air treatment, in particular to air treatment equipment.
Background
Besides providing the functions of temperature regulation, air circulation and the like for users, air treatment equipment such as an air conditioner, a fresh air machine and the like is also provided with a sterilization module for sterilizing indoor air.
The existing sterilization and disinfection module adopts a nano water ion technology, which is to discharge water drops on a tip electrode under high pressure so as to gradually split the water drops into water mist, and decompose the water mist into nano water ions with high activity, wherein the nano water ions contain a large amount of high-activity hydroxyl free radicals. The hydroxyl radical has extremely high oxidizing property, and can decompose and remove bacteria, microorganisms, formaldehyde, VOC and other components in the air.
However, the water is gradually consumed in the process of generating nano water ions, and one of the existing nano water ion technologies is to directly cool the emitter electrode by using a semiconductor refrigeration technology so as to supply water in a mode that the emitter electrode generates condensed water. However, in the case of low air humidity, the emitter electrode is difficult to generate condensed water, and nano water ions cannot be generated. In addition, the semiconductor generally adopts a pair of PN joints, the refrigerating capacity is limited, the cooling effect on the transmitting electrode is limited, and the generation amount of condensed water is reduced.
The above information disclosed in this background section is only for enhancement of understanding of the background section of the application and therefore it may not form the prior art that is already known to those of ordinary skill in the art.
Disclosure of Invention
Aiming at the problems pointed out in the background art, the utility model provides air treatment equipment which can increase the refrigerating temperature difference, thereby improving the cooling effect on a transmitting electrode, improving the condensation capacity of the transmitting electrode from air, further reliably and stably generating nano water ions and improving the air purifying effect.
In order to achieve the aim of the utility model, the utility model is realized by adopting the following technical scheme:
in some embodiments of the present application, an air treatment device is provided, in which an air duct is formed in a housing, and in which a water ion generating device is disposed, the air duct includes a transmitting electrode, a high-voltage electrode, a refrigerating portion, and an insulating portion;
a high-voltage electric field is generated between the high-voltage electrode and the emission electrode so as to ionize the water on the emission electrode into nano water ions;
the refrigerating part is used for cooling the emitting electrode and comprises a positive electrode part and a negative electrode part which are oppositely arranged, the positive electrode part is connected with the electronic type semiconductor, the negative electrode part is connected with the hole type semiconductor, and the emitting electrode is arranged at the joint of the electronic type semiconductor and the hole type semiconductor;
the insulating part is arranged between the high-voltage electrode and the refrigerating part and is used as a mounting carrier of the high-voltage electrode and the refrigerating part.
When the device works, a PN node formed by the electronic semiconductor and the hole semiconductor starts to work, the temperature of the emission electrode is reduced, the temperature of the emission electrode is gradually reduced, water is condensed from air, meanwhile, a high-voltage electric field is formed between the emission electrode and the high-voltage electrode, the water on the emission electrode is ionized under the action of the high-voltage electric field to generate nano water ions, and the nano water ions are sprayed into the air under the action of the electric field force, so that the sterilization and disinfection of the air are realized.
According to the semiconductor refrigeration technology principle, the temperature of the butt joint of the electronic type semiconductor and the hole type semiconductor is the lowest, and the transmitting electrode is arranged at the butt joint, which is equivalent to strengthening the refrigeration capacity of the refrigerating part to the transmitting electrode, furthest improving the refrigeration temperature difference, improving the cooling effect to the transmitting electrode, further improving the capacity of the transmitting electrode to condense water from air, enabling the transmitting electrode to obtain condensed water even when the air humidity is lower, improving the reliability of the transmitting electrode to transmit nano water ions, and further improving the sterilization and disinfection effects of air treatment equipment to air.
In some embodiments of the present application, the positive electrode portion includes a positive electrode plate, and the negative electrode portion includes a negative electrode plate, and an installation space for installing the electronic semiconductor and the hole semiconductor is enclosed between the positive electrode plate and the negative electrode plate;
the electron type semiconductor extends from the positive electrode plate to a direction approaching the negative electrode plate, and the hole type semiconductor extends from the negative electrode plate to a direction approaching the positive electrode plate;
and the butt joint position of the electronic type semiconductor and the hole type semiconductor is positioned in the installation space.
In some embodiments of the present application, the positive plate is an arc structure, a plurality of electronic semiconductors are arranged on the positive plate at intervals, a plurality of hole semiconductors are arranged on the negative plate at intervals, and the electronic semiconductors and the hole semiconductors are arranged in one-to-one correspondence and are distributed in spoke shape with the transmitting electrode as the center.
In some embodiments of the present application, the positive plate is provided with a plurality of positive heat dissipation fins and a positive plug terminal, which are arranged at intervals, on a side facing away from the installation space;
the negative plate is provided with a plurality of negative radiating fins and negative plug terminals which are arranged at intervals on one side away from the installation space.
In some embodiments of the present application, the mounting space is filled with epoxy resin to encapsulate the electronic semiconductor, the hole semiconductor, the positive electrode plate, and the negative electrode plate.
In some embodiments of the present application, the insulating portion includes a base, on which two support columns are oppositely disposed, and the two support columns extend toward the same side of the base;
the refrigerating part is arranged at one end of the two supporting columns, which is close to the base, the high-voltage electrode is arranged at the other end of the two supporting columns, which is far away from the base, the high-voltage electrode is provided with an ion emission port, and the emission tip of the emission electrode faces the ion emission port.
In some embodiments of the present application, the positive plate is provided with a positive mounting plate on a side facing away from the mounting space, and the positive mounting plate is connected with one of the support columns;
the negative plate is provided with a negative mounting plate on one side deviating from the mounting space, and the negative mounting plate is connected with another supporting upright post.
In some embodiments of the present application, a limiting gap is formed at one end of the support upright post, which is close to the base, and a hot melting column is arranged in the limiting gap;
the positive electrode mounting plate is embedded into the limit notch at the corresponding side and is fixed with the corresponding hot melting column in a hot melting way;
the negative electrode mounting plate is embedded into the limiting notch on the corresponding side and is fixed with the corresponding hot melting column in a hot melting mode.
In some embodiments of the present application, a positioning portion is disposed on the base, and the positioning portion is inserted into the mounting space from the bottom of the mounting space to support the electronic semiconductor and the cavity semiconductor.
In some embodiments of the present application, there is provided an air treatment apparatus comprising:
a housing in which an air duct through which the air flows is formed; the water ion generating device is arranged in the air duct and is used for providing nano water ions to purify gas;
an emission electrode for emitting nano-sized water ions;
the high-voltage electrode is used for generating a high-voltage electric field with the emitting electrode so as to ionize the water on the emitting electrode into nano water ions;
the refrigerating part is used for cooling the emitting electrode and comprises a plurality of pairs of electronic semiconductors and hole type semiconductors which are oppositely arranged one by one, and the butt joint positions of each pair of electronic semiconductors and the hole type semiconductors are connected to the emitting electrode.
Other features and advantages of the present utility model will become apparent upon review of the detailed description of the utility model in conjunction with the drawings.
Drawings
In order to more clearly illustrate the embodiments of the present utility model or the technical solutions of the prior art, the drawings that are needed in the embodiments or the description of the prior art will be briefly described below, it will be obvious that the drawings in the following description are some embodiments of the present utility model, and that other drawings can be obtained according to these drawings without inventive effort to a person skilled in the art.
FIG. 1 is a schematic view of a water ion generating device according to an embodiment;
FIG. 2 is a cross-sectional view of a water ion generating device according to an embodiment;
FIG. 3 is a schematic view showing the form of condensed water on a transmitting electrode of a water ion generating device according to an embodiment;
fig. 4 is a schematic structural view of a refrigerating part and a transmitting electrode according to an embodiment;
fig. 5 is a schematic diagram of a sealing structure of a refrigerating part and a transmitting electrode according to an embodiment;
fig. 6 is a schematic structural view of a negative electrode portion according to an embodiment;
fig. 7 is a schematic structural view of an insulating part according to an embodiment;
fig. 8 is a schematic structural view of a high-voltage electrode according to an embodiment;
fig. 9 is a schematic view of a structure of a water ion generating device releasing water ions according to an embodiment;
FIG. 10 is a schematic diagram of a control system of a water ion generating device according to an embodiment;
reference numerals:
100. an emitter electrode;
200. a refrigerating unit; 210. a positive electrode section; 211. a positive plate; 212. a positive heat radiation fin; 213. a positive plug terminal; 214. a positive electrode mounting plate; 215. a positive electrode mounting hole; 220. a negative electrode portion; 221. a negative plate; 222. a negative heat radiating fin; 223. a negative electrode plug-in terminal; 224. a negative electrode mounting plate; 225. a negative electrode mounting hole; 230. an electronic semiconductor; 240. a hole type semiconductor; 250. an installation space; 260. an epoxy resin; 270. a gap;
300. an insulating part; 310. a base; 311. a positioning part; 321. a positive electrode support column; 3211. positive limit notch; 3212. a positive electrode hot melt column; 322. a negative electrode support column; 3221. a negative electrode limit notch; 323. a high pressure hot melt column;
400. a high voltage electrode; 410. a high voltage electrode plate; 411. an ion emission port; 412. high-voltage mounting holes 420 and high-voltage plug terminals;
500. a high voltage power supply;
600. a low voltage power supply;
700. a relative humidity sensor;
800. a temperature sensor;
10. condensed water.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
In the description of the present application, it should be understood that the terms "center," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, merely to facilitate description of the present application and simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present application.
The terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, unless otherwise indicated, the meaning of "a plurality" is two or more.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art in a specific context.
In the present utility model, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
The following disclosure provides many different embodiments, or examples, for implementing different features of the utility model. In order to simplify the present disclosure, components and arrangements of specific examples are described below. They are, of course, merely examples and are not intended to limit the utility model. Furthermore, the present utility model may repeat reference numerals and/or letters in the various examples, which are for the purpose of brevity and clarity, and which do not themselves indicate the relationship between the various embodiments and/or arrangements discussed. In addition, the present utility model provides examples of various specific processes and materials, but one of ordinary skill in the art will recognize the application of other processes and/or the use of other materials.
The embodiment discloses an air treatment device, such as an air conditioner, a fresh air fan and the like, which can provide functions of temperature regulation, air circulation and the like for users so as to improve the comfort of indoor air environment.
The air treatment device comprises a shell, wherein an air channel for air circulation is formed in the shell.
The air duct is internally provided with the water ion generating device which is used for providing nano water ions so as to purify air and realize the function of sterilizing indoor air by the air treatment equipment.
The sterilization and disinfection principle of nano water ions to air is as follows: hydroxyl radical generated by high-voltage ionization in nano water ions has extremely strong oxidizing property, when the hydroxyl radical contacts with bacterial viruses on the surfaces of particles or bacterial viruses in the air, the hydroxyl radical abstracts hydrogen elements from cell walls of bacteria, so that the cell wall structure is destroyed, cells are deactivated, and proteins are denatured due to the strong oxidizing effect of the hydroxyl radical, so that the effects of sterilization and disinfection are achieved.
Taking an air conditioner as an example, the working principle is as follows: the air conditioner performs a refrigerating cycle of the air conditioner by using a compressor, a condenser, an expansion valve, and an evaporator. The refrigeration cycle includes a series of processes involving compression, condensation, expansion, and evaporation, and refrigerating or heating an indoor space.
The low-temperature low-pressure refrigerant enters the compressor, the compressor compresses the refrigerant gas into a high-temperature high-pressure state, and the compressed refrigerant gas is discharged. The discharged refrigerant gas flows into the condenser. The condenser condenses the compressed refrigerant into a liquid phase, and heat is released to the surrounding environment through the condensation process.
The expansion valve expands the liquid-phase refrigerant in a high-temperature and high-pressure state formed by condensation in the condenser into a low-pressure liquid-phase refrigerant. The evaporator evaporates the refrigerant expanded in the expansion valve and returns the refrigerant gas in a low-temperature and low-pressure state to the compressor. The evaporator may achieve a cooling effect by exchanging heat with a material to be cooled using latent heat of evaporation of a refrigerant. The air conditioner may adjust the temperature of the indoor space throughout the cycle.
The outdoor unit of the air conditioner refers to a portion of a refrigeration cycle including a compressor and an outdoor heat exchanger, the indoor unit of the air conditioner includes an indoor heat exchanger, and an expansion valve may be provided in the indoor unit or the outdoor unit.
The indoor heat exchanger and the outdoor heat exchanger function as a condenser or an evaporator. When the indoor heat exchanger is used as a condenser, the air conditioner is used as a heater of a heating mode, and when the indoor heat exchanger is used as an evaporator, the air conditioner is used as a cooler of a cooling mode.
An air channel for air circulation is formed in an indoor unit of the air conditioner, the air channel comprises an air return channel and an air outlet channel, an indoor heat exchanger is arranged in an inner cavity of the indoor unit, and indoor air circularly flows through the air return channel and the air outlet channel and simultaneously flows through the indoor heat exchanger to exchange heat with the indoor heat exchanger so as to heat or refrigerate the indoor air.
The water ion generating device is arranged in the return air duct and/or the air outlet duct, and nano water ions generated by the water ion generating device enter the room along with the air flow so as to sterilize and disinfect the indoor air.
The water ion generating device is arranged at the air outlet of the indoor unit, so that the generated nanometer water ions directly enter the room along with the air flow, and the sterilizing effect is improved.
The structure of the water ion generating device is as shown in fig. 1 and 2, and mainly includes a emitter electrode 100, a high voltage electrode 400, a refrigerating unit 200, an insulating unit 300, and the like.
The emitter electrode 100 is used to emit nano-sized water ions. The cooling unit 200 is used for cooling the emitter electrode 100, so that the emitter electrode 100 condenses water from the air and is used for ionization. The high voltage electrode 400 is used for generating a high voltage electric field with the emitter electrode 100 to ionize the condensed water on the emitter electrode 100 into nano-sized water ions.
The emitter electrode 100 may be made of a special conductive water absorbing material, at this time, the condensed water of the emitter electrode 100 has two sources, one is that the water absorbing material directly absorbs water from the air, and the other is that the emitter electrode 100 condenses water from the air under the cooling effect of the refrigerating part 200, so as to ensure that the emitter electrode 100 has enough water for ionization, and after the emitter electrode 100 is electrified, the water in micropores on the surface of the water absorbing material can be ionized to obtain nano water ions.
The emitter electrode 100 may be a carbon fiber electrode with a tip made of a carbon fiber material, or may be a metal electrode made of a corrosion-resistant material such as titanium-nickel alloy.
Referring to fig. 4, the refrigeration unit 200 includes a positive electrode unit 210 and a negative electrode unit 220 disposed opposite to each other, the positive electrode unit 210 is connected to an electronic semiconductor 230 (i.e., an N-type semiconductor), the negative electrode unit 220 is connected to a hole-type semiconductor 240 (i.e., a P-type semiconductor), and the emitter electrode 100 is disposed at the junction of the electronic semiconductor 230 and the hole-type semiconductor 240.
In operation, referring to fig. 9, the power supply is supplied to the refrigerating unit 200 by the low voltage power supply, the positive electrode unit 210 and the negative electrode unit 220 are respectively connected to the power supply, the PN junction formed by the electronic semiconductor 230 and the hole semiconductor 240 starts to operate, the temperature of the emitter electrode 100 is reduced gradually, water is condensed from the air, fig. 3 shows a form of condensed water 10 on the emitter electrode 100, meanwhile, the high voltage power supply 500 provides 3000-6000V high voltage power for the high voltage electrode 400, so that a high voltage electric field is formed between the emitter electrode 100 and the high voltage electrode 400, the water on the emitter electrode 100 is ionized under the action of the high voltage electric field to generate nano water ions, and the nano water ions are sprayed into the air under the action of the electric field force, so that sterilization and disinfection of the air are realized.
According to the semiconductor refrigeration technology principle, the temperature of the butt joint of the electronic semiconductor 230 and the cavity semiconductor 240 is the lowest, and the emitter electrode 100 is arranged at the butt joint, which is equivalent to strengthening the refrigeration capacity of the refrigeration part 200 to the emitter electrode 100, improving the refrigeration temperature difference to the greatest extent, improving the cooling effect to the emitter electrode 100, further improving the capacity of the emitter electrode 100 to condense water from air, enabling the emitter electrode 100 to obtain condensed water even when the air humidity is lower, improving the reliability of the emitter electrode 100 to emit nano water ions, and further improving the sterilization effect of air treatment equipment to air.
The insulating part 300 is provided between the high-voltage electrode 400 and the refrigerating part 200, and serves as a mounting carrier for the high-voltage electrode 400 and the refrigerating part 200.
The insulating part 300 also plays a role in controlling the distance between the high-voltage electrode 400 and the emitter electrode 100, so that a constant distance is maintained between the high-voltage electrode 400 and the emitter electrode 100, and a stable high-voltage electric field is formed.
In some embodiments of the present application, a plurality of electronic semiconductors 230 are disposed on the positive electrode portion 210, a plurality of hole-type semiconductors 240 are disposed on the negative electrode portion 220, the plurality of electronic semiconductors 230 and the plurality of hole-type semiconductors 240 are in one-to-one correspondence, so as to form a plurality of pairs of PN junctions, and the plurality of pairs of PN junctions are helpful for improving the semiconductor refrigeration effect, so that the cooling effect of the emitter electrode 100 is further improved.
In some embodiments of the present application, referring to fig. 4, the positive electrode portion 210 includes a positive electrode plate 211, the negative electrode portion 220 includes a negative electrode plate 221, the positive electrode plate 211 is disposed opposite to the negative electrode plate 221, and an installation space 250 for installing the electronic semiconductor 230 and the hole semiconductor 240 is defined between the positive electrode plate 211 and the negative electrode plate 221. The interface position of the electronic type semiconductor 230 and the hole type semiconductor 240 is located in the installation space 250.
The electron-type semiconductor 230 extends from the positive electrode plate 211 in a direction toward the negative electrode plate 221, and the hole-type semiconductor 240 extends from the negative electrode plate 221 in a direction toward the positive electrode plate 211. The pair of electron type semiconductors 230 and the hole type semiconductor 240 facing each other are close to each other, and the emitter electrode 100 is placed at the junction of the two.
All the electron type semiconductors 230 and the hole type semiconductors 240 are located in the installation space 250, the installation space 250 provides an independent installation space 250 for the electron type semiconductors 230 and the hole type semiconductors 240, the emitter electrode 100 extends from the PN junction to the outer side of the installation space 250, and the emitter tip of the emitter electrode 100 points to the high-voltage electrode 400.
In some embodiments of the present application, the positive electrode plate 211 and the negative electrode plate 221 are arc-shaped, a plurality of electronic semiconductors 230 are arranged on the positive electrode plate 211 at intervals, and a plurality of hole-type semiconductors 240 are arranged on the negative electrode plate 221 at intervals.
The positive electrode plate 211 and the negative electrode plate 221 which are oppositely arranged left and right and have arc structures enclose a circular outline installation space 250, a plurality of electronic semiconductors 230 and a plurality of cavity semiconductors 240 are distributed in a spoke shape by taking the emission electrode 100 as a center, the emission electrode 100 is positioned at the center of the circular installation space 250, and the structural layout is compact.
In some embodiments of the present application, the positive electrode plate 211 is provided with a plurality of positive electrode heat dissipation fins 212 arranged at intervals, and a positive electrode plug terminal 213 on a side facing away from the installation space 250.
The positive electrode plate 211, the positive electrode heat dissipation fins 212, and the positive electrode plug terminal 213 are integrally made of a heat conductive metal, and the integrated structure can simultaneously realize the functions of electric conduction and heat dissipation. The positive electrode heat dissipation fin 212 is used for dissipating heat of the positive electrode plate 211, and contributes to improving the refrigerating effect of the PN junction. The positive plug terminal 213 is used for connection to a low voltage power supply.
Similarly, referring to fig. 6, the negative electrode plate 221 is provided with a plurality of negative electrode heat dissipation fins 222 arranged at intervals, and a negative electrode plug terminal 223 on a side facing away from the installation space 250.
The negative electrode plate 221, the negative electrode heat dissipation fin 222, and the negative electrode plug terminal 223 are integrally made of a heat conductive metal, and the integrated structure can simultaneously realize the functions of electric conduction and heat dissipation. The negative electrode heat dissipation fin 222 is used for dissipating heat of the negative electrode plate 221, and is helpful for improving the refrigerating effect of the PN junction. The negative plug terminal 223 is used for connection to a low voltage power supply.
In some embodiments of the present application, the positive electrode plug terminal 213 and the negative electrode plug terminal 223 are disposed opposite to each other, and the widths of the positive electrode plug terminal 213 and the negative electrode plug terminal 223 are different, so as to play a role in preventing a foolproof installation, and prevent a wrong connection between the positive electrode and the negative electrode during installation, if the positive electrode and the negative electrode are connected back, the transmitting electrode 100 cannot work normally.
In some embodiments of the present application, referring to fig. 5, since the structural strength of the electronic type semiconductor 230 and the hole type semiconductor 240 is weak, in order to improve the structural strength and reliability, the epoxy resin 260 is filled in the installation space 250 to fix the electronic type semiconductor 230, the hole type semiconductor 240, the positive electrode plate 211, and the negative electrode plate 221, and the epoxy resin 260 wraps the electronic type semiconductor 230 and the hole type semiconductor 240, preventing both ends of the electronic type semiconductor 230 and the hole type semiconductor 240 from being broken when the electronic type semiconductor 240 is installed and used.
Referring again to fig. 4, the electronic type semiconductor 230, the hole type semiconductor 240, and the emitter electrode 100 are located in the installation space 250 surrounded by the positive electrode plate 211 and the negative electrode plate 221, and the positive electrode heat dissipation fin 212, the positive electrode plug terminal 213, the negative electrode heat dissipation fin 222, and the negative electrode plug terminal 223 are located outside the installation space 250.
The formation of the installation space 250 facilitates the injection and sealing of the epoxy resin 260 without affecting the heat dissipation of the externally provided heat dissipation fins and the wiring operation of the plug terminals.
The external radiating fins are beneficial to heat dissipation, and the external plug-in terminals are also convenient for wiring operation.
In some embodiments of the present application, referring to fig. 7, the insulating portion 300 includes a base 310, and two support columns (denoted as a positive support column 321 and a negative support column 322) are disposed on the base 310, where the two support columns extend toward the same side of the base 310.
The refrigerating unit 200 is disposed at one end of the two support columns near the base 310, the high-voltage electrode 400 is disposed at the other end of the two support columns far away from the base 310, the high-voltage electrode 400 is provided with an ion emission port 411, and the emission tip of the emission electrode 100 faces the ion emission port 411.
The two support posts are arranged at intervals, and the positive electrode plate 211, the negative electrode plate 221, the electronic semiconductor 230, the hole semiconductor 240 and the emission electrode 100 are positioned between the two support posts, so that the opposite direction between the emission electrode 100 and the ion emission opening 411 is not influenced to release nano water ions.
In some embodiments of the present application, referring to fig. 4 and 7, the positive plate 211 is provided with a positive mounting plate 214 on a side facing away from the mounting space 250, and the positive mounting plate 214 is connected with one of the support posts (specifically, the positive support post 321) to achieve the fixed mounting of the positive portion 210.
The negative electrode plate 221 is provided with a negative electrode mounting plate 224 on a side facing away from the mounting space 250, and the negative electrode mounting plate 224 is connected to another support column (specifically, a negative electrode support column 322) to achieve fixed mounting of the negative electrode part 220.
The positive electrode mounting plate 214 may be served by one positive electrode heat dissipation fin 212 located at the outermost side of the positive electrode portion 210, and the negative electrode mounting plate 224 may be served by one negative electrode heat dissipation fin 222 located at the outermost side of the negative electrode portion 220, so that the positive electrode mounting plate 214 and the negative electrode mounting plate 224 play a role in heat dissipation and mounting and fixing.
The positive mounting plate 214 and the negative mounting plate 224 are arranged opposite to each other so as to facilitate the fixed mounting of the support columns on the corresponding sides.
The positive electrode portion 210 and the negative electrode portion 220 are fixedly connected with the two support columns, and meanwhile, the base 310 plays a role in supporting and lifting the positive electrode portion 210 and the negative electrode portion 220.
In some embodiments of the present application, referring to fig. 7, a limiting gap is disposed at one end of the support pillar, which is close to the base 310, and a hot-melt column is disposed in the limiting gap. Specifically, the positive electrode support post 321 is provided with a positive electrode limiting notch 3211 and a positive electrode hot-melt column 3212, and the negative electrode support post 322 is provided with a negative electrode limiting notch 3221 and a negative electrode hot-melt column (not shown).
The positive electrode mounting plate 214 is embedded into the positive electrode limiting notch 3211, and positive electrode mounting holes 215 are formed in the positive electrode mounting plate 214 and are fixed with the positive electrode hot melting column 3212 in a hot melting mode.
The negative electrode mounting plate 224 is embedded into the negative electrode limiting notch 3221, and a negative electrode mounting hole 225 is formed in the negative electrode mounting plate 224 and is fixed with the negative electrode hot melting column in a hot melting mode.
The limiting notch plays a role in limiting and clamping the positive electrode mounting plate 214 and the negative electrode mounting plate 224, the directions of the positive electrode limiting notch 3211 and the negative electrode limiting notch 3221 are opposite, torsion of the refrigerating part 200 after being mounted is effectively prevented, and the mounting reliability of the refrigerating part 200 is improved.
A gap 270 is formed between the positive electrode portion 210 and the negative electrode portion 220 for the support columns to extend, the positive electrode portion 210 is located at one side of the two support columns, and the negative electrode portion 220 is located at the other side of the two support columns.
In some embodiments of the present application, the base 310 is provided with a positioning portion 311, and the positioning portion 311 is inserted into the mounting space 250 from the bottom of the mounting space 250 to receive the electronic semiconductor 230 and the cavity semiconductor 240.
The positioning part 311 and the supporting upright are positioned on the same side of the base 310, the positioning part 311 is of a hollow annular bulge rib structure, when the refrigerating part 200 is installed, the refrigerating part 200 is placed on the base 310 from top to bottom, the positive electrode part 210 is positioned on one side of the supporting upright, the negative electrode part 220 is positioned on the other side of the supporting upright, the positioning part 311 is inserted into the installation space 250 from bottom to top, the top of the positioning part 311 is abutted against the bottoms of the electronic type semiconductor 230 and the cavity type semiconductor 240, in particular the bottoms of the epoxy resin 260 used for fixedly sealing the electronic type semiconductor 230 and the cavity type semiconductor 240, then the refrigerating part 200 is rotated along the circumferential direction of the base 310, the positive electrode mounting plate 214 is embedded into the positive electrode limiting notch 3211 for hot melting fixation, and the negative electrode mounting plate 224 is embedded into the negative electrode limiting notch 3221 for hot melting fixation.
The diameter of the cylindrical structure surrounded by the positioning part 311 is gradually reduced from bottom to top, and the cylindrical structure is in a necking shape, plays a role in installation and guiding, and is convenient to insert into the installation space 250.
In some embodiments of the present application, the high voltage electrode 400 includes a high voltage electrode 400 board, an ion emitting opening 411 is disposed on the high voltage electrode 400 board, and a high voltage plug terminal 420 for connecting with the high voltage electrode 500 is disposed on the high voltage electrode 400 board.
The two support posts are provided with a hot melt post at one end remote from the base 310 for securing the high voltage electrode 400 plate, denoted as high voltage hot melt post 323. The high voltage electrode 400 has a high voltage mounting hole 412 for fixing with the high voltage hot melt column 323.
In some embodiments of the present application, referring to fig. 10, a temperature sensor 800 and a relative humidity sensor 70 are provided at the water ion emitting port 411.
The control system first detects the relative humidity H around the emitter electrode 100;
based on the value of the relative humidity H, the system determines whether the power supply 600 is currently required to be turned on;
if not, directly starting the high-voltage power supply 500 to ionize water in the air;
when the system determines that the low-voltage power supply 600 needs to be turned on, the system detects the ambient temperature T1 around the emitter electrode 100, and automatically calculates the dew point temperature T2 of the moisture in the air under the current ambient condition according to the relative humidity H and the ambient temperature T1, and calculates the difference between the ambient temperature T1 and the dew point temperature T2, wherein the smaller the value of T is, the smaller the required refrigerating capacity is, the lower the output voltage of the low-voltage power supply 600 can be, and the larger the value of T is, the larger the required refrigerating capacity is, the output voltage of the low-voltage power supply 600 needs to be raised.
Therefore, by controlling the output voltage of the low voltage power supply 600 by detecting the value of T, the risk of insufficient or excessive condensation of the water ion generating device and overflow can be effectively prevented.
In the description of the above embodiments, particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing is merely illustrative of the present utility model, and the present utility model is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the scope of the present utility model should be included in the scope of the present utility model. Therefore, the protection scope of the utility model is subject to the protection scope of the claims.

Claims (10)

1. An air treatment device comprising:
a housing in which an air duct through which the air flows is formed;
the water ion generating device is arranged in the air duct and is used for providing nano water ions to purify gas;
the water ion generating device is characterized by comprising:
an emission electrode for emitting nano-sized water ions;
the high-voltage electrode is used for generating a high-voltage electric field with the emitting electrode so as to ionize the water on the emitting electrode into nano water ions;
the refrigerating part is used for cooling the emitting electrode and comprises a positive electrode part and a negative electrode part which are oppositely arranged, the positive electrode part is connected with an electronic semiconductor, the negative electrode part is connected with a hole type semiconductor, and the emitting electrode is arranged at the joint of the electronic semiconductor and the hole type semiconductor;
and an insulating part provided between the high-voltage electrode and the refrigerating part and serving as a mounting carrier for the high-voltage electrode and the refrigerating part.
2. An air treatment device according to claim 1, wherein,
the positive electrode part comprises a positive electrode plate, the negative electrode part comprises a negative electrode plate, and an installation space for installing the electronic type semiconductor and the hole type semiconductor is enclosed between the positive electrode plate and the negative electrode plate;
the electron type semiconductor extends from the positive electrode plate to a direction approaching the negative electrode plate, and the hole type semiconductor extends from the negative electrode plate to a direction approaching the positive electrode plate;
and the butt joint position of the electronic type semiconductor and the hole type semiconductor is positioned in the installation space.
3. An air treatment device according to claim 2, wherein,
the positive plate is of an arc-shaped structure, a plurality of electronic semiconductors are arranged on the positive plate at intervals, a plurality of hole-type semiconductors are arranged on the negative plate at intervals, and the electronic semiconductors and the hole-type semiconductors are arranged in one-to-one correspondence and distributed in spoke shapes with the emission electrode as the center.
4. An air treatment device according to claim 2, wherein,
the positive plate is provided with a plurality of positive radiating fins and positive plug terminals which are arranged at intervals on one side away from the installation space;
the negative plate is provided with a plurality of negative radiating fins and negative plug terminals which are arranged at intervals on one side away from the installation space.
5. An air treatment device according to claim 2, wherein,
and the mounting space is filled with epoxy resin to fix and seal the electronic type semiconductor, the cavity type semiconductor, the positive plate and the negative plate.
6. An air treatment device according to any one of claims 2 to 5, wherein,
the insulation part comprises a base, two supporting columns are oppositely arranged on the base, and the two supporting columns extend towards the same side of the base;
the refrigerating part is arranged at one end of the two supporting columns, which is close to the base, the high-voltage electrode is arranged at the other end of the two supporting columns, which is far away from the base, the high-voltage electrode is provided with an ion emission port, and the emission tip of the emission electrode faces the ion emission port.
7. An air treatment device according to claim 6, wherein,
the positive plate is provided with a positive electrode mounting plate on one side deviating from the mounting space, and the positive electrode mounting plate is connected with one of the supporting upright posts;
the negative plate is provided with a negative mounting plate on one side deviating from the mounting space, and the negative mounting plate is connected with another supporting upright post.
8. An air treatment device according to claim 7, wherein,
a limiting notch is formed in one end, close to the base, of the supporting upright post, and a hot melting column is arranged in the limiting notch;
the positive electrode mounting plate is embedded into the limit notch at the corresponding side and is fixed with the corresponding hot melting column in a hot melting way;
the negative electrode mounting plate is embedded into the limiting notch on the corresponding side and is fixed with the corresponding hot melting column in a hot melting mode.
9. An air treatment device according to claim 6, wherein,
the base is provided with a positioning part which is inserted into the installation space from the bottom of the installation space to support the electronic type semiconductor and the cavity type semiconductor.
10. An air treatment device comprising:
a housing in which an air duct through which the air flows is formed;
the water ion generating device is arranged in the air duct and is used for providing nano water ions to purify gas;
the water ion generating device is characterized by comprising:
an emission electrode for emitting nano-sized water ions;
the high-voltage electrode is used for generating a high-voltage electric field with the emitting electrode so as to ionize the water on the emitting electrode into nano water ions;
the refrigerating part is used for cooling the emitting electrode and comprises a plurality of pairs of electronic semiconductors and hole type semiconductors which are oppositely arranged one by one, and the butt joint positions of each pair of electronic semiconductors and the hole type semiconductors are connected to the emitting electrode.
CN202322260273.7U 2023-08-22 2023-08-22 Air treatment equipment Active CN220728456U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202322260273.7U CN220728456U (en) 2023-08-22 2023-08-22 Air treatment equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202322260273.7U CN220728456U (en) 2023-08-22 2023-08-22 Air treatment equipment

Publications (1)

Publication Number Publication Date
CN220728456U true CN220728456U (en) 2024-04-05

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202322260273.7U Active CN220728456U (en) 2023-08-22 2023-08-22 Air treatment equipment

Country Status (1)

Country Link
CN (1) CN220728456U (en)

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