CN220570921U - Phase-change radio frequency switch with groove heating structure - Google Patents
Phase-change radio frequency switch with groove heating structure Download PDFInfo
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- CN220570921U CN220570921U CN202321927446.XU CN202321927446U CN220570921U CN 220570921 U CN220570921 U CN 220570921U CN 202321927446 U CN202321927446 U CN 202321927446U CN 220570921 U CN220570921 U CN 220570921U
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
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Abstract
The utility model provides a phase-change radio frequency switch with a groove heating structure, which at least comprises a substrate, a film resistor and a phase-change material, wherein the substrate is provided with a groove, the film resistor is deposited on the upper surface of the substrate and the inner wall of the groove, and the phase-change material is filled in the groove and is positioned on the film resistor. According to the phase-change radio frequency switch, the grooves are formed in the substrate, the heating resistor and the phase-change material are arranged in the groove structure, the contact area of the film resistor and the phase-change material is increased by adopting a heating method of a three-dimensional groove structure, the heating efficiency and the heating rate of the phase-change material are improved, the phase-change material is switched between crystallization and amorphization more quickly, the opening speed of the phase-change switch is increased, the switching-on ratio is increased, and meanwhile, due to the increase of the heating efficiency, the required heating voltage is correspondingly reduced, so that the power consumption can be greatly reduced.
Description
Technical Field
The utility model relates to the technical field of radio frequency, in particular to a phase-change radio frequency switch of a groove heating structure.
Background
Radio frequency switches have found very wide application in phased array radar, satellite communications, electronic countermeasure systems, and mobile communications systems. As a carrier for connecting terminals and mobile networks, radio frequency switches and front ends play a very important role. With the development of mobile communication, the next generation of mobile communication technology puts higher demands on data transmission rate and data bandwidth, and starts to develop toward millimeter wave and terahertz. Thus, there is a need for a radio frequency switch that has low insertion loss in the "on" state, high isolation in the "off" state, fast switching speed, high integration, high power capacity, and the like. The phase change material microwave switch (PCMS) has obvious advantages, has the excellent characteristics of high off/on ratio, high speed, small size and low parasitic capacitance, and is very suitable for preparing low-loss, integrated and miniaturized radio frequency switches.
The current mainstream phase-change radio frequency switch only comprises two structures, the first is direct heating type, the electrode is directly contacted with the phase-change material in this way, and the phase-change material is directly heated, however, the design has two problems affecting the practicability of the phase-change radio frequency switch in radio frequency: on the one hand, in the low-resistance state, although the electrode directly heats the phase-change material, the heating area is large, but enough joule heat cannot be effectively generated to amorphize the phase-change layer, and large current is often required to be applied to compensate; on the other hand, the entire PCM cannot be completely crystallized due to the presence of the crystal filaments. The indirect heating type phase-change radio frequency switch with four ports is the greatest difference from the direct type phase-change radio frequency switch, wherein the indirect type switch is in contact with the phase-change layer only through the radio frequency ports, the heating path is completely electrically isolated from the phase-change layer, and the phase change is realized through thermal coupling of the dielectric barrier layer during heating. In this way, the two paths can be designed completely independently, so that the flexibility of the design is improved, the mutual influence between the two paths is minimized, and the complex matching network design is avoided. However, this indirect heating type is not efficient in heating due to the presence of the insulating layer.
The direct heating type phase change switch has higher heating efficiency, but has other problems, including that the radio frequency path and the heating path of the direct heating type phase change radio frequency switch are still electrically connected, so that the resistance is smaller, the design is inflexible and the switching ratio is low in the off state; the indirect heating type switch only has the radio frequency port contacted with the phase change layer, the heating path is completely electrically isolated from the phase change layer, the flexibility of design is improved, the mutual influence between the heating path and the phase change layer is reduced to the minimum, and the complex matching network design is avoided. However, the insulating layer is present, so that the heating efficiency of the direct heating type is high, and the problem of high power consumption is caused. Therefore, it is highly desirable to design a phase-change radio frequency switch with high heating efficiency and less power consumption.
Disclosure of Invention
Aiming at the technical problems existing in the prior art, the utility model provides the phase-change radio frequency switch with the groove heating structure, so that the heating efficiency of the phase-change material is improved, the phase-change material is switched between crystallization and amorphization more quickly, the opening speed of the phase-change switch is increased, the switching-on/switching-off ratio is increased, the heating voltage is correspondingly reduced, and the power consumption is reduced.
The utility model adopts the following technical scheme to realize the technical purposes: the phase-change radio frequency switch of the groove heating structure at least comprises a substrate, a film resistor and a phase-change material, wherein a groove is formed in the substrate, the film resistor is deposited on the upper surface of the substrate and the inner wall of the groove, and the phase-change material is filled in the groove and is located on the film resistor.
According to the phase-change radio frequency switch, a heating method of a three-dimensional groove structure is adopted, and the heating resistor and the phase-change material are both arranged in the groove structure, so that the contact area between the phase-change material and the heating resistor is increased, and the heating efficiency of the phase-change material is improved.
As a preferred embodiment, the device further comprises a metal layer A and a metal layer B, wherein the metal layer A is in contact with the thin film resistor to serve as a heating electrode of the radio frequency switch, and the metal layer B is in contact with the phase change material to serve as a radio frequency electrode of the radio frequency switch.
As a preferred embodiment, the device further comprises an isolation layer and a barrier layer, wherein the isolation layer covers the upper surface of the substrate and the inner wall of the groove, the thin film resistor is positioned on the isolation layer, and the barrier layer is positioned between the thin film resistor and the phase change material.
As a preferred embodiment, the metal layer a is located on the isolation layer.
As a preferred embodiment, the metal layer B is located on the barrier layer.
As a preferred embodiment, the phase-change radio frequency switch further comprises a protective layer, wherein the protective layer is positioned on the front surface of the phase-change radio frequency switch.
As a preferred embodiment, the cross-sectional shape of the groove is rectangular or trapezoidal or triangular.
As a preferred embodiment, the substrate material is selected from the group consisting of silicon, gallium nitride, gallium arsenide, gallium oxide; the deposited isolation layer material is selected from the group consisting of silicon nitride, silicon oxide, and aluminum oxide; the material of the blocking layer is selected from silicon nitride and aluminum nitride; the phase change material is selected from GeTe and GexSb1-xTe.
As a preferred embodiment, the depth of the groove etching is 50-500 nm; the thickness of the isolation layer is 5-100 nm; the thickness of the thin film resistor is 5-100 nm; the thickness of the metal layer A is 200 nm-2 um; the thickness of the metal layer B is 1-3 um; the thickness of the deposition of the barrier layer is 100-200 nm; the thickness of the phase change material is 50-200 nm; the thickness of the protective layer is 50-200 nm.
Compared with the prior art, the utility model has the beneficial effects that:
(1) According to the phase-change radio frequency switch with the groove heating structure, the three-dimensional heating mode of the groove structure is adopted, the phase-change material is heated at the bottom, the two side surfaces are surrounded by the film resistor, the heating contact area is larger, and the heating efficiency is higher; the phase change material reaches the same temperature due to higher heating efficiency, and the required driving voltage is lower, so that the power consumption is smaller; the three-dimensional heating mode of the groove structure can realize the transformation of the phase change material between the crystalline state and the non-static state, the opening speed of the switch is higher, and the switching-on/switching-off ratio is higher.
(2) According to the phase-change radio frequency switch with the groove heating structure, disclosed by the utility model, the radio frequency port and the heating path are connected separately, so that flexible design is realized, the mutual influence between the radio frequency port and the heating path is reduced to the minimum, and the complex matching network design is avoided.
Drawings
Fig. 1 is a schematic diagram of a phase-change radio frequency switch structure of a groove heating structure according to an embodiment of the present utility model;
fig. 2 is a top view of a phase-change rf switch structure of a groove heating structure according to an embodiment of the present utility model;
fig. 3 is a schematic structural diagram of a groove heating structure after the treatment in step 1 in the preparation of a phase-change radio frequency switch according to embodiment 2 of the present utility model;
fig. 4 is a schematic structural diagram of a phase-change radio frequency switch with a groove heating structure according to embodiment 2 of the present utility model after treatment in step 2 in the preparation process;
fig. 5 is a schematic structural diagram of a phase-change radio frequency switch with a groove heating structure according to embodiment 2 after the treatment in step 3 in the preparation of the phase-change radio frequency switch;
fig. 6 is a schematic structural diagram of a groove heating structure after the treatment in step 4 in the preparation of a phase-change rf switch according to embodiment 2 of the present utility model;
fig. 7 is a schematic structural diagram of a groove heating structure after the treatment in step 5 in the preparation of a phase-change rf switch according to embodiment 2 of the present utility model;
fig. 8 is a schematic structural diagram of a groove heating structure after the treatment in step 6 in the preparation of a phase-change rf switch according to embodiment 2 of the present utility model;
in the figure:
1 substrate, 2 isolating layer, 3 film resistor, 4 metal layer A,5 barrier layer, 6 phase change material, 7 metal layer B,8 protective layer.
Detailed Description
The present utility model will be described in further detail with reference to specific examples so as to more clearly understand the present utility model by those skilled in the art. The following examples are given for illustration of the utility model only and are not intended to limit the scope of the utility model. All other embodiments obtained by those skilled in the art without creative efforts are within the protection scope of the present utility model based on the specific embodiments of the present utility model.
It should be noted that in the description of the present application, the drawings and descriptions of the embodiments are illustrative rather than limiting. Like diagramming marks throughout the embodiments of the specification identify like structures. In addition, the drawings may exaggerate thicknesses of some layers, films, panels, regions, etc. for understanding and ease of description. It will also be understood that when an element such as a layer, film, region or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may be present. In addition, "on …" refers to positioning an element on or under another element, but not essentially on the upper side of the other element according to the direction of gravity.
The utility model provides a phase-change radio frequency switch with a three-dimensional array groove structure, which at least comprises a substrate 1, a film resistor 3 and a phase-change material 6, wherein a plurality of grooves are formed in the substrate, the film resistor 3 is uniformly deposited on the upper surface of the substrate 1 and the inner walls of the grooves, and the phase-change material 6 is filled in the grooves.
According to the utility model, the grooves are formed in the substrate 1, then the film resistor 3 and the phase-change material layer are prepared on the grooves and the upper surface of the substrate 1, and the heating resistor and the phase-change material are both arranged in the groove structure by adopting a heating method of a three-dimensional groove structure, so that the contact area of the film resistor and the phase-change material is increased, the heating efficiency and the heating rate of the phase-change material are improved, the phase-change material is switched between crystallization and amorphization more quickly, the opening speed of a phase-change switch is increased, and the switching ratio is increased. Meanwhile, due to the increase of heating efficiency, the required heating voltage is correspondingly reduced, so that the power consumption can be greatly reduced.
Further, the thin film resistor comprises a metal layer A4 and a metal layer B7, wherein the metal layer A4 is in contact with the thin film resistor 3 to serve as a heating electrode of the radio frequency switch, and the metal layer B7 is in contact with the phase change material 6 to serve as a radio frequency electrode of the radio frequency switch.
Further, the device also comprises an isolation layer 2 and a barrier layer 5, wherein the isolation layer 2 and the barrier layer 5 are sequentially paved on the upper surface of the substrate 1 and the inner wall of the groove, and the phase change material 6 is positioned on the barrier layer 5. By adopting the structure, better isolation effect can be realized at the same time, so that the isolation degree is higher.
Further, in order to protect the phase-change radio frequency switch, a protection layer 8 is usually disposed on the front surface of the phase-change radio frequency switch device.
In addition, it will be appreciated by those skilled in the art that the cross-sectional shape of the groove is rectangular or trapezoidal or triangular.
Further, the material of the substrate 1 is selected from silicon, gallium nitride, gallium arsenide, and gallium oxide; the material of the isolation layer 2 is selected from silicon nitride, silicon oxide and aluminum oxide; the material of the barrier layer 5 is selected from silicon nitride and aluminum nitride.
The phase change material 6 is selected from GeTe, gexSb1-xTe.
Typically, the depth of the etching of the groove structure is 50-500 nm; the thickness of the isolation layer 2 is 5-100 nm; the thickness of the thin film resistor 3 is 5-100 nm; the thickness of the metal layer A4 is 200 nm-2 um; the thickness of the metal layer B7 is 1-3 um; the thickness of the deposition of the barrier layer 5 is 100-200 nm; the thickness of the phase change material 6 is 50-200 nm; the thickness of the protective layer 8 is 50-200 nm.
The following describes in detail a method for preparing a phase change switch with a groove heating structure according to the present application, taking a specific structure as an example:
step 1: groove etching
In order to increase the contact area between the phase change material and the heating resistor, a groove structure is adopted, and the shape of the groove structure is shown in fig. 3. Wherein the material of the substrate 1 includes, but is not limited to, silicon, gallium nitride, gallium arsenide, gallium oxide, and the like. Firstly, a pattern window to be manufactured is realized through photoetching, then, a groove structure of a target is etched by adopting a dry method, and the etching depth is 50-500 nm.
Step 2: depositing an isolation layer 2
In order to prevent the substrate from affecting the performance of the phase change switching device, a layer of insulating material is required to be manufactured on the substrate, the thickness of the insulating material is between 5 and 100nm, the insulating material is used for realizing the isolation between the phase change switching device and the substrate, deposited materials include, but are not limited to, dielectric materials such as silicon nitride, silicon oxide and aluminum oxide, and the deposited structure is shown in fig. 4. The isolation layer fully covers the groove structure, so that a better isolation effect between the device and the substrate is ensured, and the influence of the substrate on the phase change switch device is avoided.
Step 3: preparation of thin film resistor 3
The thin film resistor is directly deposited into the groove structure by adopting a sputtering and stripping process, oxygen plasma is firstly carried out for 5min for surface treatment in order to ensure the cleanness of a device area before the thin film resistor is manufactured, hydrochloric acid is adopted for cleaning to remove surface oxide hydrochloric acid for 1min (HCl: H2O=1:10), then a photolithography process is adopted for manufacturing a pattern, then a sputtering material is adopted for sputtering the thin film resistor, and the thickness of the thin film resistor is 5-100 nm. After sputtering, the thin film resistor material in the device area is reserved by adopting a stripping process, and the stripping process is sequentially cleaned by adopting wet solution acetone, stripping liquid, isopropanol and ultrapure water. The structure after the preparation of the thin film resistor is shown in fig. 5.
Step 4: metal layer A4 layer manufacture
The MT1 layer is used as a heating electrode of the phase change switch and is directly contacted with the thin film resistor, and the metal layer A adopts Ti/Au laminated metal, and the metal thickness is between 200nm and 2 um. The structure of the metal layer a after the preparation is shown in fig. 6. The metal layer A is realized through photoetching, metal deposition and stripping processes, and the stripping processes adopt wet solution acetone, stripping liquid, isopropanol and ultrapure water for cleaning in sequence.
Step 5: manufacture of the barrier layer 5
After the thin film resistor material is manufactured, a barrier layer is manufactured to isolate the thin film resistor from the phase change material manufactured later. The barrier layer has a large influence on the performance of the device, and materials with small heat conduction, good insulativity and small dielectric constant are required, and deposited materials include but are not limited to silicon nitride and aluminum nitride, and the deposited thickness is 100-200 nm. The structure after the preparation of the barrier layer is shown in fig. 7.
Step 6: phase change material layer fabrication
The photoetching machine is used for manufacturing photoetching patterns, then the sputtering and stripping processes are used for manufacturing the phase-change material with the thickness of 50-200 nm, the phase-change material is directly deposited in the groove structure and is fully surrounded by the film resistor, and the phase-change material 6 comprises but is not limited to GeTe or GexSb1-xTe and the like. The structure of the phase change material layer after preparation is shown in fig. 8.
Step 7: metal layer B7 production
The metal layer B is used as a radio frequency port electrode of the phase change switch, the metal layer B adopts Ti/Au laminated metal, the metal thickness is 1-3 um, and the metal layer B is realized through photoetching, metal deposition and stripping processes. The structure of the metal layer B after the preparation is shown in FIG. 2.
Step 8: production of the protective layer 8
The PECVD is adopted to deposit a silicon nitride front protection layer with the thickness of about 50-200 nm, the aim of the step is to protect devices manufactured on the front surface from external influence, and the structure after the preparation is shown in figure 1.
It should be noted that the above examples are only for further illustrating and describing the technical solution of the present utility model, and are not intended to limit the technical solution of the present utility model, and the method of the present utility model is only a preferred embodiment and is not intended to limit the scope of the present utility model. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present utility model should be included in the protection scope of the present utility model.
Claims (9)
1. The phase-change radio frequency switch of the groove heating structure is characterized by at least comprising a substrate, a film resistor and a phase-change material, wherein a groove is formed in the substrate, the film resistor is deposited on the upper surface of the substrate and the inner wall of the groove, and the phase-change material is filled in the groove and is positioned on the film resistor.
2. The phase-change radio frequency switch of the groove heating structure according to claim 1, further comprising a metal layer a and a metal layer B, wherein the metal layer a is in contact with the thin film resistor to serve as a heating electrode of the radio frequency switch, and the metal layer B is in contact with the phase-change material to serve as a radio frequency electrode of the radio frequency switch.
3. The phase-change radio frequency switch of the groove heating structure according to claim 2, further comprising an isolation layer and a barrier layer, wherein the isolation layer covers the upper surface of the substrate and the inner wall of the groove, the thin film resistor is located on the isolation layer, and the barrier layer is located between the thin film resistor and the phase-change material.
4. A phase change radio frequency switch of a recess heating structure according to claim 3, wherein the metal layer a is located on the isolation layer.
5. A phase change radio frequency switch of a recess heating structure according to claim 3, wherein the metal layer B is located on the barrier layer.
6. The phase-change radio frequency switch of the groove heating structure of claim 1, further comprising a protective layer, wherein the protective layer is located on a front surface of the phase-change radio frequency switch.
7. The phase-change radio frequency switch of claim 1, wherein the cross-sectional shape of the groove is rectangular or trapezoidal or triangular.
8. A phase-change radio frequency switch of a groove heating structure according to claim 3, wherein the depth of the groove etching is 50-500 nm; the thickness of the isolation layer is 5-100 nm; the thickness of the thin film resistor is 5-100 nm; the thickness of the metal layer A is 200 nm-2 um; the thickness of the metal layer B is 1-3 um; the thickness of the deposition of the barrier layer is 100-200 nm; the thickness of the phase change material is 50-200 nm.
9. The phase-change radio frequency switch of the groove heating structure according to claim 6, wherein the thickness of the protective layer is 50-200 nm.
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| CN202321927446.XU CN220570921U (en) | 2023-07-20 | 2023-07-20 | Phase-change radio frequency switch with groove heating structure |
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| CN202321927446.XU CN220570921U (en) | 2023-07-20 | 2023-07-20 | Phase-change radio frequency switch with groove heating structure |
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